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    2SA1736 Search Results

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    2SA1736 Price and Stock

    Toshiba America Electronic Components 2SA1736(TE12L,ZC)

    Trans GP BJT PNP 50V 3A 4-Pin(3+Tab) PW-Mini
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SA1736(TE12L,ZC) 2,825 463
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.1579
    • 10000 $0.1532
    		Buy Now
    Quest Components 2SA1736(TE12L,ZC) 2,260
    • 1 $0.94
    • 10 $0.94
    • 100 $0.94
    • 1000 $0.282
    • 10000 $0.188
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    Toshiba America Electronic Components 2SA1736

    3000 MA, 50 V, PNP, SI, SMALL SIGNAL TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SA1736 116
    • 1 $2.5
    • 10 $2.5
    • 100 $1.5
    • 1000 $1.35
    • 10000 $1.35
    		Buy Now

    2SA1736 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1736 Kexin Power Switching Applications Original PDF
    2SA1736 Micro Commercial Components TRANS GP BJT PNP 50V 3A 3SOT-89 Original PDF
    2SA1736 TY Semiconductor Power Switching Applications - SOT-89 Original PDF
    2SA1736 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1736 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1736 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1736 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1736 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1736 Toshiba Silicon PNP transistor for power amplifier and power switching applications Scan PDF
    2SA1736 Toshiba TRANSISTOR SILICON PNP EPITAXIAL TYPE(PCT PROCESS) Scan PDF

    2SA1736 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SA1736

    Abstract: 2SC4541
    Text: 2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1736 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1.5 A) • High speed switching time: tstg = 0.2 s (typ.)


    Original     		2SA1736 2SC4541 2SA1736 2SC4541 PDF

    2SA1736

    Abstract: 2SC4541 marking HE M2X marking
    Text: TO SH IBA 2SA1736 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 736 POWER AMPLIFIER APPLICATIONS U n it in mm POWER SWITCHING APPLICATIONS 1.6MAX. —j- * 4.6MAX. 1.7MAX. 0.4 + 0.05 i Low Saturation V o lta g e: V q ^ (sat) = —0.5V (Max.) (l£ = —1.5A)


    OCR Scan     		2SA1736 2SC4541 2SA1736 2SC4541 marking HE M2X marking PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SA1736 Features • • • • • • Low saturation voltage: VCE sat =0.5V(Max.) (IC=1.5A) High speed switching: tstg=0.2us(Typ.) Small flat package


    Original     		2SA1736 2SC4541 75mAdc) 100mAdc, 10Vdc, 75mAdc, 250mm2x0 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1736 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1.5 A) • High speed switching time: tstg = 0.2 µs (typ.)


    Original     		2SA1736 2SC4541 SC-62 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1736 Features • • • • • • Low saturation voltage: VCE sat =0.5V(Max.) (IC=1.5A) High speed switching: tstg=0.2us(Typ.) Small flat package


    Original     		2SA1736 2SC4541 75mAdc) 100mAdc, 10Vdc, 75mAdc, 250mm2x0 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE 2SA1736 Unit in mm POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS 1.7 MAX. Low Saturation Voltage : V c e sat =-0.5A(Max.) (IC=-1.5A) High Speed Switching: tstg=0-2^s (Typ.) Small Flat Package Pc=l~2W (Mounted on Ceramic Sabstrate)


    OCR Scan     		2SA1736 2SC4541 PDF

    2SA1736

    Abstract: 2SC4541
    Text: TO SH IBA 2SA1736 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 736 POWER AMPLIFIER APPLICATIONS U n it in mm POWER SWITCHING APPLICATIONS 1.6MAX. —J- * 4.6MAX. 1.7MAX. 0.4 + 0.05 i Low Saturation V o lta g e: V q ^ (sat) = —0.5V (Max.) (l£ = —1.5A)


    OCR Scan     		2SA1736 2SC4541 2SA1736 2SC4541 PDF

    2SA1736

    Abstract: 2SC4541
    Text: 2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1736 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1.5 A) • High speed switching time: tstg = 0.2 s (typ.)


    Original     		2SA1736 2SC4541 2SA1736 2SC4541 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SA1736 2 S A 1 736 TO S H IB A TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SW ITCHING APPLICATIONS 1 .6 M A X . — J- - 4 .6 M A X . 1 .7 M A X . • • • • • Low Saturation Voltage: V^ e (sat)= —0.5V(Max.) (1^= —1.5A)


    OCR Scan     		2SA1736 2SC4541 250mm2X0 250mm PDF

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification 2SA1736 Features Low Saturation Voltage: VCE sat = -0.5V (max) (IC = -1.5A) High Speed Switching Time: tstg = 0.2ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC4541 Absolute Maximum Ratings Ta = 25


    Original     		2SA1736 2SC4541 -75mA -100mA PDF

    2SA1736

    Abstract: 2SC4541
    Text: 2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1736 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1.5 A) • High speed switching time: tstg = 0.2 µs (typ.)


    Original     		2SA1736 2SC4541 2SA1736 2SC4541 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1736 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1.5 A) · High speed switching time: tstg = 0.2 µs (typ.)


    Original     		2SA1736 2SC4541 SC-62 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1736 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 17 3 6 PO W ER AM PLIFIER APPLICATIONS U nit in mm PO W ER SWITCHING APPLICATIONS l.GM A X. 4.6MAX. 1.7MAX. • Low Saturation Voltage: Vq e (sat)= —0.5V(Max.) (1^= —1.5A)


    OCR Scan     		2SA1736 2SC4541 250mnTXÖ PDF

    2SA1736

    Abstract: 2SC4541
    Text: 2SA1736 TOSHIBA 2 S A 1 736 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm PO W ER SWITCHING APPLICATIONS 1.6MAX —j- 4.6MAX. 1.7MAX. Low Saturation Voltage: V q ^ (sat)= —0.5V (Max.) (Iq = —1.5A)


    OCR Scan     		2SA1736 2SC4541 40X50X0 250mm 2SA1736 2SC4541 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1736 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1.5 A) • High speed switching time: tstg = 0.2 µs (typ.)


    Original     		2SA1736 2SC4541 SC-62 PDF

    smd marking KD

    Abstract: kd smd transistor smd transistor 2A 2SC4541 kd transistor smd br smd transistor smd transistor MARKING 2A smd transistor marking br 2SA1736 smd marking TF
    Text: Transistors SMD Type Power Switching Applications 2SC4541 Features Low Saturation Voltage: VCE sat = 0.5V (max) (IC = 1.5A) High Speed Switching Time: tstg = 0.5ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SA1736


    Original     		2SC4541 2SA1736 100mA smd marking KD kd smd transistor smd transistor 2A 2SC4541 kd transistor smd br smd transistor smd transistor MARKING 2A smd transistor marking br 2SA1736 smd marking TF PDF

    2SA1736

    Abstract: 2SC4541
    Text: 2SA1736 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1736 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1.5 A)


    Original     		2SA1736 2SC4541 SC-62 20070701-JA 2SA1736 2SC4541 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1736 Features • • • • • • • Low saturation voltage: VCE sat =0.5V(Max.) (IC=1.5A) High speed switching: tstg=0.2us(Typ.)


    Original     		2SA1736 2SC4541 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1736 Features • • • • • • Low saturation voltage: VCE sat =0.5V(Max.) (IC=1.5A) High speed switching: tstg=0.2us(Typ.)


    Original     		2SA1736 2SC4541 10mAdc, 75mAdc) 100mAdc, 10Vdc, 75mAdc, PDF

    2SA1148

    Abstract: SA1757 2SA1126 2SC456 2SA1140 2SA1747 2SA1755 2SA1138 2SA1763 2SA1130
    Text: - 48 - Ta=25°C, *EP(iTc=25<0 WL 2SA1725 2SA1726 2SA1727 2SA1728 2SA1729 2SA1730 2SA1731 2SA1732 2SA1733K 2SA1734 2SA1735 2SA1736 2SA1737 2SA1738 2SA1739 2SA1740 2SA1741 2SA1742 2SA1743 2SA1744 2SA1745 2SA1747 2SA1748 2SA1749 2SA1755 2SA1757 2SA1758 2SA 17 5 9


    OCR Scan     		2SA1725 2SA1726 2SA1727 2SA1728 2SA1729 SA1730 2SA1731 SC-70) 2SA1748 2SC4564 2SA1148 SA1757 2SA1126 2SC456 2SA1140 2SA1747 2SA1755 2SA1138 2SA1763 2SA1130 PDF

    2SA1736

    Abstract: 2SC4541
    Text: 2SA1736 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1736 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1.5 A)


    Original     		2SA1736 2SC4541 SC-62 2SA1736 2SC4541 PDF

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4541 o POWER AMPLIFIER APPLICATIONS o POWER SWITCHING APPLICATIONS • Low Saturation Voltage : VcE(sat)=-0.5V(Max.) (Ic=1.5A) • High Speed Switching Time: t stg=0.5MS (Typ.) • Small Flat Package • Pc=l~2W (Mounted on Ceramic Sabstrate)


    OCR Scan     		2SC4541 2SA1736 300ps, PDF

    smd k72 y5

    Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
    Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR


    Original     		1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 smd k72 y5 K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89 PDF