Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SC5026G • Package ■ Features • Code MiniP3-F2
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2002/95/EC)
2SA1890G
2SC5026G
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2SA1890
Abstract: 2SC5026
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026 Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 Unit Collector-base voltage (Emitter open)
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2002/95/EC)
2SA1890
2SC5026
2SA1890
2SC5026
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5026G Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1890G • Package ■ Features • Low collector-emitter saturation voltage VCE(sat)
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2002/95/EC)
2SC5026G
2SA1890G
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2SA1890
Abstract: 2SC5026
Text: Transistor 2SC5026 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SA1890 Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat . High collector to emitter voltage VCEO.
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2SC5026
2SA1890
2SA1890
2SC5026
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2SA1890
Abstract: 2SC5026 2sa189
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026 Unit: mm 4.5±0.1 3 2 0.5±0.08 1.5±0.1 Collector-base voltage (Emitter open)
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2002/95/EC)
2SA1890
2SC5026
2SA1890
2SC5026
2sa189
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026 Unit: mm 4.5±0.1 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 2.5±0.1 1.0+0.1 –0.2
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2002/95/EC)
2SA1890
2SC5026
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Untitled
Abstract: No abstract text available
Text: IC SMD Type Product specification 2SA1890 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 2.50-0.1 Features +0.1 4.00-0.1 +0.1 1.80-0.1 Low collector-emitter saturation voltage VCE sat +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 0.80-0.1 +0.1 0.53-0.1 +0.1 0.48-0.1
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2SA1890
OT-89
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2SA1890
Abstract: No abstract text available
Text: Transistors SMD Type Silicon PNP Epitaxial Planar 2SA1890 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 2.50-0.1 Features +0.1 4.00-0.1 +0.1 1.80-0.1 Low collector-emitter saturation voltage VCE sat +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 0.80-0.1 +0.1 0.53-0.1
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2SA1890
OT-89
2SA1890
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2SA1890
Abstract: 2SC5026
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026 Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1.5±0.1 Unit Collector-base voltage (Emitter open)
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2002/95/EC)
2SA1890
2SC5026
2SA1890
2SC5026
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2SA1890
Abstract: 2SC5026
Text: Transistor 2SC5026 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SA1890 Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 ● 1 2 0.5±0.08 3 0.4±0.08 1.5±0.1 2.5±0.1 Low collector to emitter saturation voltage VCE sat . High collector to emitter voltage VCEO.
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2SC5026
2SA1890
2SA1890
2SC5026
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5026 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1890 Unit: mm 1.6±0.2 3 2 0.5±0.08 1.5±0.1 Symbol Rating Unit Collector-base voltage (Emitter open)
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2002/95/EC)
2SC5026
2SA1890
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5026 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1890 Unit: mm 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 Symbol Rating
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2002/95/EC)
2SC5026
2SA1890
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Untitled
Abstract: No abstract text available
Text: Transistor 2SC5026 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1890 Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 ● 3 2 0.5±0.08 1 0.4±0.08 1.5±0.1 2.5±0.1 Low collector to emitter saturation voltage VCE sat . High collector to emitter voltage VCEO.
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2SC5026
2SA1890
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2SA1890
Abstract: 2SC5026
Text: Transistor 2SC5026 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SA1890 Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat . High collector to emitter voltage VCEO.
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2SC5026
2SA1890
2SA1890
2SC5026
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2SA1890
Abstract: 2SC5026
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5026 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1890 Unit: mm M Di ain sc te on na tin nc ue e/ d 4.5±0.1 1.6±0.2 3 2 0.5±0.08
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2002/95/EC)
2SC5026
2SA1890
2SA1890
2SC5026
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2SA1890
Abstract: 2SC5026
Text: Transistor 2SA1890 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC5026 Unit: mm 4.5±0.1 * 1.5±0.1 2.5±0.1 0.4±0.04 3° Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –80 V Collector to emitter voltage
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2SA1890
2SC5026
2SA1890
2SC5026
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2SA1890G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890G Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026G • Package ■ Features • Low collector-emitter saturation voltage VCE(sat)
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2002/95/EC)
2SA1890G
2SC5026G
2SA1890G
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2SA1890
Abstract: 2SC5026
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5026 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1890 Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 • Features 3 2 0.5±0.08 1.5±0.1
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2002/95/EC)
2SC5026
2SA1890
2SA1890
2SC5026
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2SA1890G
Abstract: 2SC5026G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SC5026G ue pl d in an c se ed lud pl vi an m m es
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2002/95/EC)
2SA1890G
2SC5026G
2SA1890G
2SC5026G
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2SA1890
Abstract: 2SC5026
Text: Transistors 2SC5026 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1890 Unit: mm 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 Symbol Rating Unit Collector-base voltage Emitter open VCBO 80 V Collector-emitter voltage (Base open)
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2SC5026
2SA1890
2SA1890
2SC5026
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2SA1890
Abstract: 2SC5026
Text: Transistors 2SA1890 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026 Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3˚ 3 2 0.5±0.08 1.0+0.1 –0.2 1 0.4±0.08 Symbol Rating Unit Collector-base voltage Emitter open
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2SA1890
2SC5026
2SA1890
2SC5026
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2SA1890
Abstract: 2SC5026 transistor 2sa1890
Text: Transistor 2SA1890 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC5026 Unit: mm • Absolute Maximum Ratings * 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat .
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2SA1890
2SC5026
2SA1890
2SC5026
transistor 2sa1890
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Untitled
Abstract: No abstract text available
Text: Transistor 2SA1890 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026 Unit: mm 4.5±0.1 * 1.5±0.1 2.5±0.1 0.4±0.04 3° Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –80 V Collector to emitter voltage
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2SA1890
2SC5026
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026 Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3˚ 3 2 0.5±0.08 1.0+0.1 –0.2 1 0.4±0.08
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2002/95/EC)
2SA1890
2SC5026
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