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    Panasonic Electronic Components 2SC50260RL

    TRANS NPN 80V 1A MINIP3-F1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SC50260RL Reel 1,000
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    • 1000 $0.33248
    • 10000 $0.27387
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    2SC5026 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC5026 Kexin Silicon NPN Epitaxial Planar Type Original PDF
    2SC5026 Panasonic Silicon NPN epitaxial planer type Original PDF
    2SC5026 Panasonic NPN Transistor Original PDF
    2SC5026 Panasonic Silicon NPN epitaxial planar type transistor Original PDF
    2SC5026 Panasonic Silicon NPN epitaxial planer type Original PDF
    2SC5026 TY Semiconductor Silicon NPN Epitaxial Planar Type - SOT-89 Original PDF
    2SC5026 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC50260RL Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 80VCEO 1A MINI-PWR Original PDF
    2SC50262AR Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SC50262AS Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF

    2SC5026 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2A marking

    Abstract: 2SC5026 Silicon NPN Epitaxial Planar Type smd transistor MARKING 2A npn
    Text: Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SC5026 Features Low collector-emitter saturation voltage VCE sat . High collector-emitter voltage (Base open) VCEO Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the


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    PDF 2SC5026 2A marking 2SC5026 Silicon NPN Epitaxial Planar Type smd transistor MARKING 2A npn

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SC5026G • Package ■ Features • Code MiniP3-F2


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    PDF 2002/95/EC) 2SA1890G 2SC5026G

    2SA1890

    Abstract: 2SC5026
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026 Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 Unit Collector-base voltage (Emitter open)


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    PDF 2002/95/EC) 2SA1890 2SC5026 2SA1890 2SC5026

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5026G Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1890G • Package ■ Features • Low collector-emitter saturation voltage VCE(sat)


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    PDF 2002/95/EC) 2SC5026G 2SA1890G

    2SA1890

    Abstract: 2SC5026
    Text: Transistor 2SC5026 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SA1890 Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat . High collector to emitter voltage VCEO.


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    PDF 2SC5026 2SA1890 2SA1890 2SC5026

    2SA1890

    Abstract: 2SC5026 2sa189
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026 Unit: mm 4.5±0.1 3 2 0.5±0.08 1.5±0.1 Collector-base voltage (Emitter open)


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    PDF 2002/95/EC) 2SA1890 2SC5026 2SA1890 2SC5026 2sa189

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026 Unit: mm 4.5±0.1 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 2.5±0.1 1.0+0.1 –0.2


    Original
    PDF 2002/95/EC) 2SA1890 2SC5026

    2SA1890

    Abstract: 2SC5026
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026 Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1.5±0.1 Unit Collector-base voltage (Emitter open)


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    PDF 2002/95/EC) 2SA1890 2SC5026 2SA1890 2SC5026

    2SA1890

    Abstract: 2SC5026
    Text: Transistor 2SC5026 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SA1890 Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 ● 1 2 0.5±0.08 3 0.4±0.08 1.5±0.1 2.5±0.1 Low collector to emitter saturation voltage VCE sat . High collector to emitter voltage VCEO.


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    PDF 2SC5026 2SA1890 2SA1890 2SC5026

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5026 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1890 Unit: mm 1.6±0.2 3 2 0.5±0.08 1.5±0.1 Symbol Rating Unit Collector-base voltage (Emitter open)


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    PDF 2002/95/EC) 2SC5026 2SA1890

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Type SMD Transistors IC Product specification 2SC5026 Features Low collector-emitter saturation voltage VCE sat . High collector-emitter voltage (Base open) VCEO Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the


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    PDF 2SC5026

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5026 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1890 Unit: mm 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 Symbol Rating


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    PDF 2002/95/EC) 2SC5026 2SA1890

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SC5026 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1890 Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 ● 3 2 0.5±0.08 1 0.4±0.08 1.5±0.1 2.5±0.1 Low collector to emitter saturation voltage VCE sat . High collector to emitter voltage VCEO.


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    PDF 2SC5026 2SA1890

    2SA1890

    Abstract: 2SC5026
    Text: Transistor 2SC5026 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SA1890 Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat . High collector to emitter voltage VCEO.


    Original
    PDF 2SC5026 2SA1890 2SA1890 2SC5026

    2SA1890

    Abstract: 2SC5026
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5026 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1890 Unit: mm M Di ain sc te on na tin nc ue e/ d 4.5±0.1 1.6±0.2 3 2 0.5±0.08


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    PDF 2002/95/EC) 2SC5026 2SA1890 2SA1890 2SC5026

    2SA1890

    Abstract: 2SC5026
    Text: Transistor 2SA1890 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC5026 Unit: mm 4.5±0.1 * 1.5±0.1 2.5±0.1 0.4±0.04 3° Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –80 V Collector to emitter voltage


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    PDF 2SA1890 2SC5026 2SA1890 2SC5026

    2SA1890G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890G Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026G • Package ■ Features • Low collector-emitter saturation voltage VCE(sat)


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    PDF 2002/95/EC) 2SA1890G 2SC5026G 2SA1890G

    2SA1890

    Abstract: 2SC5026
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5026 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1890 Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 • Features 3 2 0.5±0.08 1.5±0.1


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    PDF 2002/95/EC) 2SC5026 2SA1890 2SA1890 2SC5026

    2SA1890G

    Abstract: 2SC5026G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SC5026G ue pl d in an c se ed lud pl vi an m m es


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    PDF 2002/95/EC) 2SA1890G 2SC5026G 2SA1890G 2SC5026G

    2SA1890

    Abstract: 2SC5026
    Text: Transistors 2SC5026 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1890 Unit: mm 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 Symbol Rating Unit Collector-base voltage Emitter open VCBO 80 V Collector-emitter voltage (Base open)


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    PDF 2SC5026 2SA1890 2SA1890 2SC5026

    2SA1890

    Abstract: 2SC5026
    Text: Transistors 2SA1890 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026 Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3˚ 3 2 0.5±0.08 1.0+0.1 –0.2 1 0.4±0.08 Symbol Rating Unit Collector-base voltage Emitter open


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    PDF 2SA1890 2SC5026 2SA1890 2SC5026

    2SA1890

    Abstract: 2SC5026 transistor 2sa1890
    Text: Transistor 2SA1890 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC5026 Unit: mm • Absolute Maximum Ratings * 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat .


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    PDF 2SA1890 2SC5026 2SA1890 2SC5026 transistor 2sa1890

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SA1890 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026 Unit: mm 4.5±0.1 * 1.5±0.1 2.5±0.1 0.4±0.04 3° Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –80 V Collector to emitter voltage


    Original
    PDF 2SA1890 2SC5026

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026 Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3˚ 3 2 0.5±0.08 1.0+0.1 –0.2 1 0.4±0.08


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    PDF 2002/95/EC) 2SA1890 2SC5026