Contextual Info: 2SC5824 Datasheet NPN 3.0A 60V Middle Power Transistor Outline Parameter Value VCEO IC 60 3A MPT3 Base Collector Emitter 2SC5824 SC-62 <SOT-89> Features 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low VCE(sat) VCE(sat)=0.50V(Max.)

Contextual Info: 2SC5824 Datasheet NPN 3.0A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60 3A MPT3 Base Collector Emitter 2SC5824 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low VCE(sat) VCE(sat)=0.50V(Max.)

Contextual Info: 2SA2701 / 2SA2702 Datasheet PNP -3.0A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -3.0A MPT3 Collector CPT3 Base Collector Base Emitter Emitter 2SA2071 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5824 / 2SC5825

2SA2071

Abstract: 2SC5824 T100
Contextual Info: Power transistor 60V, 3A 2SA2071 Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2A) 3) Strong discharge power for inductive load and capacitance load.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5848 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2079 Unit: mm 3 2 Symbol Collector-base voltage (Emitter open) VCBO Collector-emitter voltage (Base open)

Contextual Info: Transistors SMD Type PNP Transistors 2SA2071 • Features ● High speed switching. Tf : Typ. : 20ns at IC = - 3A ● Low saturation voltage, typically (Typ. : -2 00mV at IC = -2A, IB = -0.2A) ● Strong discharge power for inductive load and capacitance load.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2078G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5846G • Features ■ Package • High forward current transfer ratio hFE • SSS-Mini type package, allowing downsizing of the equipment

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2078 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5846 Unit: mm 0.33+0.05 –0.02 0.10+0.05 –0.02 5˚ • High forward current transfer ratio hFE

A2073

Abstract: Transistor 2sa2073
Contextual Info: High voltage discharge, High speed switching, Low Noise 60V, 3A 2SA2073 Dimensions (Unit : mm) Features 1) High speed switching. ( tf : Typ. : 20ns at IC = 3A) 2) Low saturation voltage, typically. (Typ. : 200mV at IC = 2.0A, IB = 200mA)

2SA2079

Abstract: 2SC5848
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5848 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2079 Unit: mm 3 2 M Di ain sc te on na tin nc ue e/ d  High forward current transfer ratio hFE

A2072

Contextual Info: High voltage discharge, High speed switching, Low Noise 60V, 3A 2SA2072 Dimensions (Unit : mm) Features 1) High speed switching. ( tf : Typ. : 20ns at IC = 3A) 2) Low saturation voltage, typically. (Typ. : 200mV at IC = 2.0A, IB = 200mA)

2SA2071

Abstract: 2SC5824 T100
Contextual Info: 2SA2071 Transistor Power transistor −60V, −3A 2SA2071 !External dimensions (Units : mm) MPT3 4.0 2.5 0.5 (1) 0.5 3.0 1.5 0.4 1.0 (2) 1.6 4.5 !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = −3A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −2A, IB = −0.2A)

2SA2074

Abstract: A2074 A-2074
Contextual Info: Power Transistors 2SA2074 Silicon PNP epitaxial planar type Unit: mm Power supply for Audio & Visual equipments such as TVs and VCRs Industrial equipments such as DC-DC converters 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 15.0±0.5 φ 3.2±0.1 • Features 13.7±0.2

2SA20

Abstract: 2SA2075 A2075
Contextual Info: Power Transistors 2SA2075 Silicon PNP epitaxial planar type Unit: mm 10.0±0.2 2.5±0.1 13.0±0.2 • Features • High-speed switching tstg: storage time/tf: fall time is short • Low collector-emitter saturation voltage VCE(sat) • Superior forward current transfer ratio hFE linearity

2SA2070

Contextual Info: 2SA2070 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2070 High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = -0.1 A • Low collector-emitter saturation voltage: VCE (sat) =- 0.20 V (max)

2SA2079

Abstract: 2SC5848
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5848 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2079 Unit: mm 3 2 0.60±0.05  High forward current transfer ratio hFE  Suitable for high-density mounting and douwsizing of the equipment for

Contextual Info: 2SA2070 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2070 High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = -0.1 A • Low collector-emitter saturation voltage: VCE (sat) =- 0.20 V (max)

NE 544

Abstract: 2SA2073
Contextual Info: SPICE PARAMETER 2SA2073 by ROHM TR Div. * 2SA2073 PNP BJT model * Date: 06/11/27 .MODEL 2SA2073 PNP + IS=700.00E-15 + BF=192.39 + VAF=100 + IKF=6.8965 + ISE=700.00E-15 + NE=1.7521 + BR=24.020 + VAR=100 + IKR=32.385E-3 + ISC=57.252E-12 + NC=1.4443 + NK=.76838

NE 544

Abstract: 2SA2072 2SA207
Contextual Info: SPICE PARAMETER 2SA2072 by ROHM TR Div. * 2SA2072 PNP BJT model * Date: 06/11/27 .MODEL 2SA2072 PNP + IS=700.00E-15 + BF=192.39 + VAF=100 + IKF=6.8965 + ISE=700.00E-15 + NE=1.7521 + BR=24.020 + VAR=100 + IKR=32.385E-3 + ISC=57.252E-12 + NC=1.4443 + NK=.76838

2SA2077

Abstract: 2SC5845
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2077 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5845 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 (0.95) (0.95)

2SC5848

Abstract: 2SA2079
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5848 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2079 Unit: mm 3 2 0.60±0.05  High forward current transfer ratio hFE  Suitable for high-density mounting and douwsizing of the equipment for

Contextual Info: 2SA2070 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2070 High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = -0.1 A · Low collector-emitter saturation voltage: VCE (sat) =- 0.20 V (max)

Contextual Info: High voltage discharge, High speed switching, Low Noise 60V, 3A 2SA2072 Dimensions (Unit : mm) Features 1) High speed switching. ( tf : Typ. : 20ns at IC = 3A) 2) Low saturation voltage, typically. (Typ. : 200mV at IC = 2.0A, IB = 200mA)

2SA2078

Abstract: 2SC5846
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2078 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5846 Unit: mm 0.33+0.05 –0.02 M Di ain sc te on na tin nc ue e/ d 0.10+0.05 –0.02 1 0.23+0.05