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Toshiba America Electronic Components 2SA2142(TE16L1,NQ) TRANS PNP 600V 0.5A PW-MOLD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SA2142(TE16L1,NQ)	Cut Tape	3,894		1	1 $1.46 10 $0.897 100 $0.582 1000 $0.40717 10000 $0.40717	Buy Now
	2SA2142(TE16L1,NQ)	Digi-Reel	3,894		1	1 $1.46 10 $0.897 100 $0.582 1000 $0.40717 10000 $0.40717	Buy Now
	2SA2142(TE16L1,NQ)	Reel	2,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.31125	Buy Now
Quest Components	2SA2142(TE16L1,NQ)		676			1 $1.18 10 $1.18 100 $0.59 1000 $0.472 10000 $0.472	Buy Now
	2SA2142(TE16L1,NQ)		676			1 $1.18 10 $1.18 100 $0.59 1000 $0.472 10000 $0.472	Buy Now
Chip One Stop	2SA2142(TE16L1,NQ)	Cut Tape	1,862			1 - 10 $1.4 100 $0.558 1000 $0.39 10000 $0.39	Buy Now
EBV Elektronik	2SA2142(TE16L1,NQ)			17 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Panasonic Electronic Components 2SA21400P TRANS PNP 180V 1.5A TO-220D-A1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SA21400P	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components 2SA2142(TE16L1NQ) Transistor PNP 600V 3-Pin New PW-Mold - Tape and Reel (Alt: 2SA2142(TE16L1,NQ))
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	2SA2142(TE16L1NQ)	Reel		14 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $0.35358	Buy Now
Bourns Inc SA2-1400-CLT-STD Gas Discharge Tubes - GDTs / Gas Plasma Arrestors SURGE ARRESTER 1400V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SA2-1400-CLT-STD					1 - 10 - 100 - 1000 - 10000 $1.36	Get Quote
Others 2SA2142 AVAILABLE EU
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	2SA2142		75,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

2SA214 Datasheets (12)

Part	Manufacturer	Description	Datasheet Type	PDF
2SA214	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SA214	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SA214	Unknown	Cross Reference Datasheet	Scan	PDF
2SA214	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SA214	Unknown	Discontinued Transistor Data Book 1975	Scan	PDF
2SA214	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2SA214	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SA214	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SA2140	Panasonic	Silicon PNP epitaxial planar type	Original	PDF
2SA21400P	Panasonic	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 180VCEO 1.5A TO-220D	Original	PDF
2SA21400Q	Panasonic	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 180VCEO 1.5A TO-220D	Original	PDF
2SA2142	Toshiba	PNP Transistor	Original	PDF

2SA214 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SA2140 Abstract: 2SA214 Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA2140 Silicon PNP epitaxial planar type Unit: mm For power amplification For TV VM circuit 4.6±0.2 9.9±0.3 M Di ain sc te on na tin nc ue e/ d 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C	Original	2002/95/EC) 2SA2140 O-220D-A1 2SA2140 2SA214	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA2140 Silicon PNP epitaxial planar type Unit: mm For power amplification For TV VM circuit 4.6±0.2 9.9±0.3 M Di ain sc te on na tin nc ue e/ d 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C	Original	2002/95/EC) 2SA2140	PDF
A2142 Abstract: 2SA2142 Text: 2SA2142 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2142 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −600 V Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Collector-base voltage VCBO	Original	2SA2142 A2142 2SA2142	PDF
A2142 Abstract: 2SA2142 Text: 2SA2142 東芝トランジスタシリコンPNP三重拡散形 2SA2142 ○ 高電圧スイッチング用 • 単位: mm 高耐圧です。: VCEO = −600 V 絶対最大定格 Ta = 25°C 項目記号定格単位コレクタ • ベース間電圧	Original	2SA2142 20070701-JA A2142 2SA2142	PDF
A2142 Abstract: 2SA2142 2SA21 Text: 2SA2142 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2142 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −600 V Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Collector-base voltage VCBO −600 V	Original	2SA2142 2SA2142oducts A2142 2SA2142 2SA21	PDF
Untitled Abstract: No abstract text available Text: 'J , Unc. C/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA2140 DESCRIPTION 1 • Collector-Emitter Breakdown Voltage:V(BR)CEo=-180V(Min) • Good Linearity of hFE	Original	2SA2140 -180V O-220F 10MHz	PDF
Untitled Abstract: No abstract text available Text: 2SA2142 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2142 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −600 V Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Collector-base voltage VCBO	Original	2SA2142	PDF
Untitled Abstract: No abstract text available Text: 2SA2142 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2142 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −600 V Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Collector-base voltage VCBO	Original	2SA2142	PDF
C5935 Abstract: 2SA2140 2SC5993 Text: Product News Delivering high breakdown voltage plus high frequency characteristics. High-fT Transistors 2SA2140/2SC5993 Overview 2SA2140/2SC5993 high-fT transistors deliver a typical fT value of 100MHz or higher at VCEO of 180V while featuring high-speed switching and low-saturation voltage	Original	2SA2140/2SC5993 2SA2140/2SC5993 100MHz 2SA2118 2SC5993NEW 2SC5935 2SA2140NEW C5935 2SA2140 2SC5993	PDF
SJD00316AED Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA2140 Silicon PNP epitaxial planar type Unit: mm For power amplification For TV VM circuit 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C Parameter	Original	2002/95/EC) 2SA2140 SJD00316AED	PDF
2SA2140 Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA2140 Silicon PNP epitaxial planar type Unit: mm For power amplification For TV VM circuit 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 15.0±0.5 • Satisfactory linearity of forward current transfer ratio hFE	Original	2002/95/EC) 2SA2140 2SA2140	PDF
Untitled Abstract: No abstract text available Text: 2SA2142 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2142 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −600 V Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Collector-base voltage VCBO	Original	2SA2142	PDF
A2142 Abstract: 2SA2142 Text: 2SA2142 東芝トランジスタシリコンPNP三重拡散形 2SA2142 ○ 高電圧スイッチング用 • 単位: mm 高耐圧です。: VCEO = −600 V 絶対最大定格 Ta = 25°C 項目記号定格単位コレクタ • ベース間電圧	Original	2SA2142 A2142 2SA2142	PDF
TV power transistor datasheet Abstract: 2SA2140 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA2140 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -180V(Min) ·Good Linearity of hFE APPLICATIONS ·Designed for power amplification and for TV VM circuit.	Original	2SA2140 -180V -180V 10MHz TV power transistor datasheet 2SA2140	PDF

2SA2142 Abstract: A2142 2SA21 PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING A Text: 2SA2142 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2142 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −600 V Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Collector-base voltage VCBO	Original	2SA2142 2SA2142 A2142 2SA21 PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING A	PDF
2SA2140 Abstract: 2SA21 Text: Power Transistors 2SA2140 Silicon PNP epitaxial planar type Unit: mm For power amplification For TV VM circuit 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO	Original	2SA2140 2SA2140 2SA21	PDF
MIP2F3 Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the	Original	PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent	PDF
ma3df25 Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01 Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01	PDF
2sc5929 Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE	PDF
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01	PDF
IGBT GT30F124 Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 Text: 東芝半導体製品総覧表 2011 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075	PDF
2sC5200, 2SA1943 Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current	Original	BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent	PDF
2SA124 Abstract: OC343 2SA123 MA520 TF65 OC54 t1826 2n1750 2SA37 OC56 Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,	OCR Scan	25M5A MA240 25MSA MA393EÃ JAN2N129 TI380 TI379 TI381 TI382 TI383 2SA124 OC343 2SA123 MA520 TF65 OC54 t1826 2n1750 2SA37 OC56	PDF
AL102 ATES Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29 Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible	OCR Scan	Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29	PDF

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2SA214 Search Results

2SA214 Price and Stock

Toshiba America Electronic Components 2SA2142(TE16L1,NQ)

Panasonic Electronic Components 2SA21400P

Toshiba America Electronic Components 2SA2142(TE16L1NQ)

Bourns Inc SA2-1400-CLT-STD

Others 2SA2142

2SA214 Datasheets (12)

2SA214 Datasheets Context Search

2SA2140

Untitled

A2142

A2142

A2142

Untitled

Untitled

Untitled

C5935

SJD00316AED

2SA2140

Untitled

A2142

TV power transistor datasheet

2SA2142

2SA2140

MIP2F3

ma3df25

2sc5929

GT30F131

IGBT GT30F124

2sC5200, 2SA1943

2SA124

AL102 ATES