2SA2162
Abstract: 2SC6036 2SC603
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2162 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05
|
Original
|
PDF
|
2002/95/EC)
2SA2162
2SC6036
2SA2162
2SC6036
2SC603
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162G • Package Low collector-emitter saturation voltage VCE(sat) SSS-Mini type package, allowing downsizing of the equipment and automatic
|
Original
|
PDF
|
2002/95/EC)
2SC6036G
2SA2162G
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05
|
Original
|
PDF
|
2002/95/EC)
2SC6036
2SA2162
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2162G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036G • Features Package Low collector-emitter saturation voltage VCE(sat) SSS-Mini type package, allowing downsizing of the equipment and automatic
|
Original
|
PDF
|
2002/95/EC)
2SA2162G
2SC6036G
|
2SA2162g
Abstract: 2SC603
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162G • Features Package Low collector-emitter saturation voltage VCE(sat) SSS-Mini type package, allowing downsizing of the equipment and automatic
|
Original
|
PDF
|
2002/95/EC)
2SC6036G
2SA2162G
2SA2162g
2SC603
|
2SA2162G
Abstract: 2SC6036
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162G • Package Low collector-emitter saturation voltage VCE(sat) SSS-Mini type package, allowing downsizing of the equipment and automatic
|
Original
|
PDF
|
2002/95/EC)
2SC6036G
2SA2162G
2SA2162G
2SC6036
|
2SA21
Abstract: marking 2u 2SA2162 2SC6036
Text: Transistors 2SA2162 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 0.40 (0.40) 0.80±0.05 1.20±0.05 Absolute Maximum Ratings Ta = 25°C Unit Collector-base voltage (Emitter open)
|
Original
|
PDF
|
2SA2162
2SC6036
2SA21
marking 2u
2SA2162
2SC6036
|
2SA2162G
Abstract: 2SC6036 2SC6036G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162G • Package Low collector-emitter saturation voltage VCE(sat) SSS-Mini type package, allowing downsizing of the equipment and automatic
|
Original
|
PDF
|
2002/95/EC)
2SC6036G
2SA2162G
2SA2162G
2SC6036
2SC6036G
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2162 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 Unit Collector-base voltage (Emitter open)
|
Original
|
PDF
|
2002/95/EC)
2SA2162
2SC6036
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2162G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036G • Package M Di ain sc te on na tin nc ue e/ d Features Absolute Maximum Ratings Ta = 25°C
|
Original
|
PDF
|
2002/95/EC)
2SA2162G
2SC6036G
|
2SC603
Abstract: 2SA2162 2SC6036
Text: Transistors 2SC6036 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 0.40 (0.40) 0.80±0.05 1.20±0.05 Absolute Maximum Ratings Ta = 25°C Unit Collector-base voltage (Emitter open)
|
Original
|
PDF
|
2SC6036
2SA2162
2SC603
2SA2162
2SC6036
|
2SA21
Abstract: 2SA2162G 2SC6036
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162G • Package Low collector-emitter saturation voltage VCE(sat) SSS-Mini type package, allowing downsizing of the equipment and automatic
|
Original
|
PDF
|
2002/95/EC)
2SC6036G
2SA2162G
2SA21
2SA2162G
2SC6036
|
2SA2162
Abstract: 2SC6036 2SC60 2SC603
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2162 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 0.80±0.05 1.20±0.05 Absolute Maximum Ratings Ta = 25°C
|
Original
|
PDF
|
2002/95/EC)
2SA2162
2SC6036
2SA2162
2SC6036
2SC60
2SC603
|
2SA2162
Abstract: 2SC6036
Text: Transistors 2SA2162 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036 Unit: mm 0.33 0.05 0.02 • Features 0.10 0.05 0.02 0.80 1.20 VCBO –15 V Collector-emitter voltage Base open VCEO –12 V Emitter-base voltage (Collector open)
|
Original
|
PDF
|
2SA2162
2SC6036
2SA2162
2SC6036
|
|
2SA2162
Abstract: 2SA2162G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2162G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036G • Package Low collector-emitter saturation voltage VCE(sat) SSS-Mini type package, allowing downsizing of the equipment and automatic
|
Original
|
PDF
|
2002/95/EC)
2SA2162G
2SC6036G
2SA2162
2SA2162G
|
2SC6036
Abstract: 2SA2162
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 0.80±0.05 1.20±0.05 Absolute Maximum Ratings Ta = 25°C
|
Original
|
PDF
|
2002/95/EC)
2SC6036
2SA2162
2SC6036
2SA2162
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05
|
Original
|
PDF
|
2002/95/EC)
2SC6036
2SA2162
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2162 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05
|
Original
|
PDF
|
2002/95/EC)
2SA2162
2SC6036
|
2SA2162G
Abstract: 2SA2162
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2162G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036G • Package Low collector-emitter saturation voltage VCE(sat) SSS-Mini type package, allowing downsizing of the equipment and automatic
|
Original
|
PDF
|
2002/95/EC)
2SA2162G
2SC6036G
2SA2162G
2SA2162
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 0.80±0.05 1.20±0.05 Collector-emitter voltage (Base open)
|
Original
|
PDF
|
2002/95/EC)
2SC6036
2SA2162
|
MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
|
Original
|
PDF
|
PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
|
ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
|
Original
|
PDF
|
respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
|
2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
|
Original
|
PDF
|
responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
|
2SA1806J
Abstract: 2SA2082 2SA2162
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2082 Silicon PNP epitaxial planar type For high speed switching Unit: mm • Features 3 0.60±0.05 2 1 Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro
|
Original
|
PDF
|
2002/95/EC)
2SA2082
2SA1806J
2SA2082
2SA2162
|