2SA2162
Abstract: 2SC6036 2SC603
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2162 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05
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2SA2162
2SC6036
2SA2162
2SC6036
2SC603
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162G • Package Low collector-emitter saturation voltage VCE(sat) SSS-Mini type package, allowing downsizing of the equipment and automatic
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2002/95/EC)
2SC6036G
2SA2162G
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05
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2002/95/EC)
2SC6036
2SA2162
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2162G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036G • Features Package Low collector-emitter saturation voltage VCE(sat) SSS-Mini type package, allowing downsizing of the equipment and automatic
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2SA2162G
2SC6036G
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2SA2162g
Abstract: 2SC603
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162G • Features Package Low collector-emitter saturation voltage VCE(sat) SSS-Mini type package, allowing downsizing of the equipment and automatic
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2002/95/EC)
2SC6036G
2SA2162G
2SA2162g
2SC603
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2SA2162G
Abstract: 2SC6036
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162G • Package Low collector-emitter saturation voltage VCE(sat) SSS-Mini type package, allowing downsizing of the equipment and automatic
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2002/95/EC)
2SC6036G
2SA2162G
2SA2162G
2SC6036
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2SA21
Abstract: marking 2u 2SA2162 2SC6036
Text: Transistors 2SA2162 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 0.40 (0.40) 0.80±0.05 1.20±0.05 Absolute Maximum Ratings Ta = 25°C Unit Collector-base voltage (Emitter open)
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2SA2162
2SC6036
2SA21
marking 2u
2SA2162
2SC6036
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2SA2162G
Abstract: 2SC6036 2SC6036G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162G • Package Low collector-emitter saturation voltage VCE(sat) SSS-Mini type package, allowing downsizing of the equipment and automatic
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2002/95/EC)
2SC6036G
2SA2162G
2SA2162G
2SC6036
2SC6036G
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2162 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 Unit Collector-base voltage (Emitter open)
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2002/95/EC)
2SA2162
2SC6036
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2162G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036G • Package M Di ain sc te on na tin nc ue e/ d Features Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
2SA2162G
2SC6036G
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2SC603
Abstract: 2SA2162 2SC6036
Text: Transistors 2SC6036 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 0.40 (0.40) 0.80±0.05 1.20±0.05 Absolute Maximum Ratings Ta = 25°C Unit Collector-base voltage (Emitter open)
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2SC6036
2SA2162
2SC603
2SA2162
2SC6036
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2SA21
Abstract: 2SA2162G 2SC6036
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162G • Package Low collector-emitter saturation voltage VCE(sat) SSS-Mini type package, allowing downsizing of the equipment and automatic
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2002/95/EC)
2SC6036G
2SA2162G
2SA21
2SA2162G
2SC6036
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2SA2162
Abstract: 2SC6036 2SC60 2SC603
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2162 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 0.80±0.05 1.20±0.05 Absolute Maximum Ratings Ta = 25°C
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2SA2162
2SC6036
2SA2162
2SC6036
2SC60
2SC603
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2SA2162
Abstract: 2SC6036
Text: Transistors 2SA2162 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036 Unit: mm 0.33 0.05 0.02 • Features 0.10 0.05 0.02 0.80 1.20 VCBO –15 V Collector-emitter voltage Base open VCEO –12 V Emitter-base voltage (Collector open)
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2SA2162
2SC6036
2SA2162
2SC6036
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2SA2162
Abstract: 2SA2162G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2162G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036G • Package Low collector-emitter saturation voltage VCE(sat) SSS-Mini type package, allowing downsizing of the equipment and automatic
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2002/95/EC)
2SA2162G
2SC6036G
2SA2162
2SA2162G
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2SC6036
Abstract: 2SA2162
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 0.80±0.05 1.20±0.05 Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
2SC6036
2SA2162
2SC6036
2SA2162
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05
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2002/95/EC)
2SC6036
2SA2162
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2162 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05
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2002/95/EC)
2SA2162
2SC6036
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2SA2162G
Abstract: 2SA2162
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2162G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036G • Package Low collector-emitter saturation voltage VCE(sat) SSS-Mini type package, allowing downsizing of the equipment and automatic
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2002/95/EC)
2SA2162G
2SC6036G
2SA2162G
2SA2162
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 0.80±0.05 1.20±0.05 Collector-emitter voltage (Base open)
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2SC6036
2SA2162
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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