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    2SA566

    Abstract: 40319 2sa8160 2SA816-Y 2SA816Y 2SA13560 40634S 2SA816 TN2905 MJ4646
    Text: POWER SILICON PNP Item Number Part Number I C -5 10 15 20 25 30 35 40 45 50 60 2SB806 2SA1248 40634 40319 40319L 40319S 40406 40538 :g~~:~ 65 70 40537 40537L 40537S 40362 40362L 40362S 40634L 40634S ~~~~g~7 75 80 85 90 95 Ic Max V(BR)CEO (A) (V) hFE Min Max


    Original     		PDF CorpTO-126var O-126var O-220AB O-126 O-202var O-126 2SA566 40319 2sa8160 2SA816-Y 2SA816Y 2SA13560 40634S 2SA816 TN2905 MJ4646

    transistor a816

    Abstract: 2SA816 A816 2SC1626 AC75 k1011 Produced by Perfect Crystal Device Technology
    Text: s;U3ypN Pxiíy*s;?jLB h5ys?zs> PCTj5ä 2 s a 816 ^ L IC O N PNP EPITAXIAL TRANSISTOR (PCT PROCESS) Unit in mm o a ssjid fl 0 3.6±CL2 ° M e dium Power A m p l i f i e r App l i c a t i o n s ° Driver • Stage A m p l i f i e r Applications ¡SifffiT-t :


    OCR Scan     		PDF 2sa816 SSC16S6t3y7i] 2SC1626 220AB SC-46 2-10AIA transistor a816 2SA816 A816 2SC1626 AC75 k1011 Produced by Perfect Crystal Device Technology