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    Panasonic Electronic Components 2SB10540P

    TRANS PNP 100V 5A TOP-3F-A1
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    DigiKey 2SB10540P Bulk 120
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    Panasonic Electronic Components 2SB1052

    TRANSISTOR,BJT,PNP,60V V(BR)CEO,2A I(C),SOT-186
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    Quest Components 2SB1052 35
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    Hitachi Ltd 2SB1058B

    Small Signal Bipolar Transistors; Surface Mount: NO; JEDEC-95 Code: TO-92; Package Style (Meter): CYLINDRICAL; Terminal Form: THROUGH-HOLE; Package Body Material: PLASTIC/EPOXY;
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    Vyrian 2SB1058B 222
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    2SB105 Datasheets (95)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB105 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB105 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB105 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SB105 Unknown Cross Reference Datasheet Scan PDF
    2SB105 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB105 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SB105 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB105 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB105 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1050 Panasonic Silicon PNP epitaxial planer type Original PDF
    2SB1050 Panasonic PNP Transistor Original PDF
    2SB1050 Panasonic Silicon PNP epitaxial planer type Original PDF
    2SB1050 Various Russian Datasheets Transistor Original PDF
    2SB1050 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1050 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1050 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1050 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1050 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1050P Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SB1050Q Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF

    2SB105 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SB1052

    Abstract: 2SD1480 IC 4090
    Text: Inchange Semiconductor Product Specification 2SB1052 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1480 ・Low collector saturation voltage APPLICATIONS ・For power amplifier applications PINNING PIN DESCRIPTION


    Original     		2SB1052 O-220Fa 2SD1480 2SB1052 2SD1480 IC 4090 PDF

    2SB1055

    Abstract: 2SD1486
    Text: JMnic Product Specification 2SB1055 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1486 ・High fT ・Satisfactory linearity of hFE ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications


    Original     		2SB1055 2SD1486 -120V; -20mA 2SB1055 2SD1486 PDF

    2SB1052

    Abstract: 2SD1480
    Text: SavantIC Semiconductor Product Specification 2SB1052 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SD1480 ·Low collector saturation voltage APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION 1


    Original     		2SB1052 O-220Fa 2SD1480 2SB1052 2SD1480 PDF

    2SD1488

    Abstract: 2SB1057
    Text: SavantIC Semiconductor Product Specification 2SB1057 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD1488 ·High fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications


    Original     		2SB1057 2SD1488 -150V; -20mA 2SD1488 2SB1057 PDF

    2SB1056

    Abstract: 2SD1487
    Text: SavantIC Semiconductor Product Specification 2SB1056 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD1487 ·High fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications


    Original     		2SB1056 2SD1487 -140V; -20mA 2SB1056 2SD1487 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SB1050 Silicon PNP epitaxial planar type For low-frequency amplification Unit: mm 2.5±0.1 1.0 (1.0) (1.5) 4.5±0.1 2.0±0.2 R 0.9 R 0.7 3.5±0.1 (1.5) 4.1±0.2 • Absolute Maximum Ratings Ta = 25°C 2.4±0.2 1.0±0.1 d p lan inc ea se ed lud


    Original     		2SB1050 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SD1485 5.0±0.2 φ 3.2±0.1 15.0±0.2 • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • Wide area of safe operation ASO


    Original     		2SB1054 2SD1485 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1480 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1052 10.0±0.2 0.7±0.1 Features 4.2±0.2 5.5±0.2 2.7±0.2 TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage


    Original     		2SD1480 2SB1052 PDF

    2SB1055

    Abstract: 2SD1486
    Text: Inchange Semiconductor Product Specification 2SB1055 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1486 ・High fT ・Satisfactory linearity of hFE ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications


    Original     		2SB1055 2SD1486 2SB1055 2SD1486 PDF

    2SD1480

    Abstract: 2SB1052
    Text: Power Transistors 2SD1480 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1052 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage


    Original     		2SD1480 2SB1052 2SD1480 2SB1052 PDF

    2SB1050

    Abstract: No abstract text available
    Text: Transistor 2SB1050 Silicon PNP epitaxial planer type For low-frequency amplification Unit: mm 2.5±0.1 1.0 4.5±0.1 R 0.9 R 0.7 4.1±0.2 ● Low collector to emitter saturation voltage VCE(sat). Large collector current IC. M type package allowing easy automatic and manual insertion as


    Original     		2SB1050 2SB1050 PDF

    2SB1054

    Abstract: 2SD1485
    Text: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1485 Unit: mm 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip 16.2±0.5 • Excellent collector current IC characteristics of forward current


    Original     		2SB1054 2SD1485 2SB1054 2SD1485 PDF

    2SB1054

    Abstract: 2SD1485
    Text: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SD1485 5.0±0.2 φ 3.2±0.1 15.0±0.2 • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • Wide area of safe operation ASO


    Original     		2SB1054 2SD1485 2SB1054 2SD1485 PDF

    2SD1487

    Abstract: 2SB1056
    Text: JMnic Product Specification 2SB1056 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1487 ・High fT ・Satisfactory linearity of hFE ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications


    Original     		2SB1056 2SD1487 -140V; -20mA 2SD1487 2SB1056 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SB1050 Silicon PNP epitaxial planar type For low-frequency amplification Unit: mm 2.5±0.1 1.0 4.5±0.1 R 0.9 R 0.7 4.1±0.2 ● Low collector to emitter saturation voltage VCE(sat). Large collector current IC. M type package allowing easy automatic and manual insertion as


    Original     		2SB1050 PDF

    2SB1054

    Abstract: 2SD1485
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1485 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1054 5.0±0.2 (0.7) 15.0±0.3 (3.2) 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip


    Original     		2002/95/EC) 2SD1485 2SB1054 2SB1054 2SD1485 PDF

    2SB1054

    Abstract: 2SD1485
    Text: Power Transistors 2SD1485 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1054 Unit: mm ● ● • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage


    Original     		2SD1485 2SB1054 2SB1054 2SD1485 PDF

    2SB1054

    Abstract: 2SD1485
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1485 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1054 5.0±0.2 (0.7) 15.0±0.3 (3.2) 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip


    Original     		2002/95/EC) 2SD1485 2SB1054 2SB1054 2SD1485 PDF

    2SB1054

    Abstract: 2SD1485
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1054 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1485 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.7) 15.0±0.3 15.0±0.2


    Original     		2002/95/EC) 2SB1054 2SD1485 2SB1054 2SD1485 PDF

    2SB1050

    Abstract: 2sB105
    Text: Transistors 2SB1050 Silicon PNP epitaxial planar type For low-frequency amplification Unit: mm 2.5±0.1 Collector-emitter voltage Base open Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation * Junction temperature


    Original     		2SB1050 2SB1050 2sB105 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1054 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1485 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.7) 15.0±0.3 15.0±0.2


    Original     		2002/95/EC) 2SB1054 2SD1485 PDF

    2SB1052

    Abstract: 2SD1480 8MA11
    Text: Power T ransistòrs 2SB1052 2SB 1052 Silicon PNP Triple-Diffused Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SD1480 • Features . • High DC c u rre n t gain I i f e and good linearity • Low collector-eim itter saturation voltage (VcEcsao)


    OCR Scan     		2SB1052 2SD1480 b13Efl55 0QlbS13 2SB1052 2SD1480 8MA11 PDF

    2SD1488

    Abstract: 2SB1057 7A20 33SI 2sB105
    Text: 2SD1488 2 SD 1 4 8 8 U H V NPN /' —•^■Jl^/Si N P N T rip le D iffused P lanar Power Amplifier i] /'Complementary Pair with 2SB1057 U n it : mm 5 .2 m a x . 2SB1057 4 ~ ■ # n d> CM it/F e a tu r e s ■X 3§ L 4J* -1 o • £ k , ¡ t S t S i X i f 1 > ii£ h FE


    OCR Scan     		2SD1488 2SB1057 2SB1057 33-SI/hFE2 2SD1488 7A20 33SI 2sB105 PDF

    2SB1051K

    Abstract: T146 T147 2sb1051
    Text: h ÿ "yv7> £ /Transistors 1 1 2SB1051K Epitaxial Planer PNP Silicon Transistor fô ll'/& S :friitiffl/L o w Freq. Power Amp. * ÿfft^i& lll/D im en sio n s Unit : mm IC = 1 A 2) V c E l s a t ) ^ ' » VCE ( s a t ) = - 0 2 V (T yp.) (lc /lB = -5 0 0 m A /-5 0 m A )


    OCR Scan     		2SB1051K -500mA/-50mA) SC-59 10X10-Â T146 T147 2sb1051 PDF