2SB111 Search Results

smd marking BA

Abstract: 2sb111 2SB1118
Contextual Info: Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1118 Features Low collector-to-emitter saturation voltage. Very small size making it easy to provide highdensity, Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter

2SB1119

Contextual Info: Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1119 Features Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -25

2SB1118

Abstract: 2sd1618
Contextual Info: ¡ O rd e rin g n u m b e r .E N 1 7 8 4 B 2SB1118/2SD1618 N0.1784B PNP/NPN Epitaxial Planar Silicon Transistors Low-Voltage, High-Current Amp, _ Muting Applications Features . Low collector-to-emitter saturation voltage. . Very small size making it easy to provide high-density,

Contextual Info: DATA SHEET SILICON TRANSISTORS 2SB1116, 1116A PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Low VCE(sat) VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB = −50 mA) • High PT in small dimension with general-purpose

2sd1609

Contextual Info: 2SD1609, 2SD1610 Silicon NPN Epitaxial HITACHI Application Low frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110 Outline TO -126 MOD 1 Absolute Maximum Ratings Ta = 25°C Ratings Item Symbol 2SD1609 2SD1610 Unit Collector to base voltage

2SB1119

Abstract: Medium Power Transistor 2SD1619 2sb111 SOT89B-1
Contextual Info: 2SB1119/2SD1619 PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product D D1 A FEATURES E E1 SOT-89 b1     Power dissipation   P CM : 500mW˄Tamb=25ć˅ 1.BASE Collector current 2.COLLECTOR A ICM : -1 3.EMITTER Collector-base voltage

2SB1116A

Abstract: 2SB1116AK 2SD1616A 2sb1116-al 2SB1116AL 2SD1616A-G 2SD1616AG
Contextual Info: 2SB1116A -1 A, -80 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES High Collector Power Dissipation Complementary to 2SD1616A G H 1Emitter 2Collector 3Base

b 817

Abstract: toshiba 2SB755 B817 2SB755 2SB897 2SB927 2SA1213 2SB1272 2sb789a 2SA1194
Contextual Info: - £ Type No. jcg 7 |3 £ Manuf. & T T S « B m SANYO 2SA1703 2SB 793A 2SB 794 2SB 795 fé 2SB 798 2SB 799 . B S b a B H 2SB1119 2SB1122 2SAI 416 m B « 2SB1122 2SB1122 2SA1416 2SA1416 2SA1416 2SA1418 2SB 813 2SB 814 . 2SB 815 2SB 816 _ 2SB 817 ✓ 2SB 818

d1609

Abstract: D1610
Contextual Info: 2SD1609,2SD1610 Silicon NPN Epitaxial HITACHI Application Low frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110 Outline Absolute Maximum Ratings T a = 25 °C Ratings Item Symbol 2SD1609 2SD1610 Unit Collector to base voltage

2SB1119

Abstract: 2SD1619 2SD619
Contextual Info: Ordering number: EN 1785A 2SB1119/2SD1619 PNP/NPN Epitaxial Planar Silicon Transistors LF Amp, Electronic Governor Applications Features . Very small size making it easy to provide high-density, IC*s : 2SB1119 Absolute Maximum Ratings at Ta=25°C Collector to Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SB1116/1116A TO-92 TRANSISTOR PNP 1. EMITTER FEATURES • High Collector Power Dissipation . · Complementary to 2SD1616/2SD1616A 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SD1617

Abstract: 2SB1117
Contextual Info: PNP SILICON TRANSISTOR 2SB1117 DESCRIPTION The 2SB1117 is a Low VcE sat transistor which has a large current capability and wide ASO. PACKAGE DIMENSIONS in m illim e te rs It is suitable fo r driver, o f solenoid or m otor, or electronic flash. FEATURES 7.0 MAX.

200A1

Abstract: 2SB1116A
Contextual Info: Transistors 2SB1116A USHA INDIA LTD AUDIO FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic Symbol Collector-Base Voltage VcBO Coilector-Emitter Voltage VCE0 Emitter-Base Voltage Collector Current (DC) •Collector Current (Pulse)

Contextual Info: Data Sheet N0501R R07DS0724EJ0100 Rev.1.00 Mar 30, 2012 PNP SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0501S. VCEO = 50 V IC DC = 1.0 A Miniature package SOT-23F (2SB1115: Package variation of 3pPoMM) PRODUCT LINEUP Part Number

Contextual Info: Product specification 2SB1115A Features World standard miniature package. Low VCE sat : VCE(sat)=-0.2V at 1A Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -80 V Collector to emitter voltage VCEO -60 V Emitter to base voltage

2SB1116

Abstract: 2SB1116A
Contextual Info: ST 2SB1116 / 2SB1116A PNP Silicon Epitaxial Planar Transistor Audio frequency power amplifier and medium speed switching. The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. TO-92 Plastic Package Weight approx. 0.19g

smd transistor zk

Abstract: 2SB1114 hFE CLASSIFICATION Marking
Contextual Info: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB1114 Features World standard miniature package. High DC current gain hFE=135 to 600. Low VCE sat : VCE(sat)=-0.3V at 1.5A Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SD1616 TRANSISTOR NPN 1. EMITTER FEATURES z Low VCE(sat) z Complementary Transistor with The 2SB1116 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SB1109

Abstract: 2SB1110 i09 b 2SD1610
Contextual Info: HITACHI 2SB1109, 2SB1110 SILICON PNP EPITAXIAL LOW FREQUENCY HIGH VOLTAGE AMPLIFIER COMPLEM ENTARY PAIR WITH 2SD1609 AND 2SD1610 I! -1. lÎ | « 1. lîtiiiittr 2. C ollector 3. Dave DimCflSlWVt iit nun (JEDEC TO-126 MOD.) I AB S O LU TE M AXIM UM RATINGS (Ta=25°C)

Contextual Info: 2SB1109,2SB1110 Silicon PNP Epitaxial HITACHI Application Low frequency high voltage amplifier complementary pair with 2SD1609 and 2SD1610 Outline TO -126 MOD 2. Collector 3. Base Absolute Maximum Ratings Ta = 25 °C Ratings Item Symbol 2SB1109 2SB1110 Unit

200A1

Abstract: 2SB1116
Contextual Info: Transistors 2SB1116 USHA INDIA LTD AUDIO FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic Symbol Rating Unit Collector-Base Voltage VcBO -6 0 V Coilector-Emitter Voltage VCE0 -5 0 V -6 -1 -2 0.75 150 —5 5 M 5 0

2SB1119

Contextual Info: Ordering number:1785A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1119/2SD1619 LF Amplifier, Electronic Governor Applications Features Package Dimensions • Very small size making it easy to provide highdensity, small-sized hybrid IC’s. unit:mm 2038

2SB1116

Abstract: 2SB1116A
Contextual Info: UTC 2SB1116/A PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Complement to 2SD1616/A APPLICATIONS * Audio Frequency Power Amplifier * Medium Speed Switching 1 TO-92 1: Emitter 2: Collector 3: Base ABSOLUTE MAXIMUM RATINGS Ta=25°C

1115A

Abstract: D1794 2SB1115 k1985
Contextual Info: データ・シート シリコン・トランジスタ Silicon Transistor 2SB1115, 1115A PNP エピタキシアル形シリコントランジスタ 低周波電力増幅用 本資料の内容は，予告なく変更することがありますので，最新のものであることをご確認の上ご使用ください。