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    2SB111 Search Results

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    2SB1115A-T1-AZ Renesas Electronics Corporation Small Signal Bipolar Transistors, POMM, / Visit Renesas Electronics Corporation
    2SB1114-T1-AZ Renesas Electronics Corporation Small Signal Bipolar Transistors, POMM, / Visit Renesas Electronics Corporation
    2SB1115-T1-AZ Renesas Electronics Corporation Small Signal Bipolar Transistors, POMM, / Visit Renesas Electronics Corporation
    2SB1115(0)-T1-AY Renesas Electronics Corporation Small Signal Bipolar Transistors Visit Renesas Electronics Corporation
    2SB1115-T2-AZ Renesas Electronics Corporation Small Signal Bipolar Transistors, POMM, / Visit Renesas Electronics Corporation
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    2SB111 Price and Stock

    PEI Genesis CA3102E14S-2SB111

    CONN RCPT FMALE 4P SILVER SOLDER
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    PEI Genesis CA3102E28-12SB111

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    Rochester Electronics LLC 2SB1117-AZ

    SMALL SIGNAL BIPOLAR TRANS PNP
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    Rochester Electronics LLC 2SB1115-T1

    TRANS PNP 50V 1A SC-62
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    Rochester Electronics LLC 2SB1117-T-AZ

    SMALL SIGNAL BIPOLAR TRANS PNP
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    2SB111 Datasheets (160)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB111 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB111 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SB111 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB111 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB111 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB111 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB111 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB111 Unknown Cross Reference Datasheet Scan PDF
    2SB111 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SB1110 Renesas Technology Silicon PNP Epitaxial Original PDF
    2SB1110 Hitachi Semiconductor SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER) Scan PDF
    2SB1110 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1110 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1110 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1110 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1110 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB1110 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1110 Unknown Cross Reference Datasheet Scan PDF
    2SB1110B Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB1110C Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    ...

    2SB111 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    smd marking BA

    Abstract: 2sb111 2SB1118
    Text: Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1118 Features Low collector-to-emitter saturation voltage. Very small size making it easy to provide highdensity, Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter


    Original     		2SB1118 -100mA -10mA -50mA smd marking BA 2sb111 2SB1118 PDF

    2SB1119

    Abstract: No abstract text available
    Text: Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1119 Features Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -25


    Original     		2SB1119 -500mA -50mA 2SB1119 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTORS 2SB1116, 1116A PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Low VCE(sat) VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB = −50 mA) • High PT in small dimension with general-purpose


    Original     		2SB1116, 2SD1616 2SB1116 2SB1116A PDF

    2SB1119

    Abstract: Medium Power Transistor 2SD1619 2sb111 SOT89B-1
    Text: 2SB1119/2SD1619 PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product D D1 A FEATURES E E1 SOT-89 b1     Power dissipation   P CM : 500mW˄Tamb=25ć˅ 1.BASE Collector current 2.COLLECTOR A ICM : -1 3.EMITTER Collector-base voltage


    Original     		2SB1119/2SD1619 OT-89 500mW 01-Jun-2002 2SB1119 Medium Power Transistor 2SD1619 2sb111 SOT89B-1 PDF

    2SB1116A

    Abstract: 2SB1116AK 2SD1616A 2sb1116-al 2SB1116AL 2SD1616A-G 2SD1616AG
    Text: 2SB1116A -1 A, -80 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES High Collector Power Dissipation Complementary to 2SD1616A G H 1Emitter 2Collector 3Base


    Original     		2SB1116A 2SD1616A 2SB1116A-L 2SB1116A-K 2SB1116A-U 21-Jan-2011 2SB1116A 2SB1116AK 2SD1616A 2sb1116-al 2SB1116AL 2SD1616A-G 2SD1616AG PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SB1116/1116A TO-92 TRANSISTOR PNP 1. EMITTER FEATURES • High Collector Power Dissipation . · Complementary to 2SD1616/2SD1616A 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		2SB1116/1116A 2SD1616/2SD1616A 2SB1116 2SB1116A -50mA PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet N0501R R07DS0724EJ0100 Rev.1.00 Mar 30, 2012 PNP SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0501S. VCEO = 50 V IC DC = 1.0 A Miniature package SOT-23F (2SB1115: Package variation of 3pPoMM) PRODUCT LINEUP Part Number


    Original     		N0501R R07DS0724EJ0100 N0501S. OT-23F 2SB1115: N0501R-T1-AT 3000p/reel OT-23F PVSF0003ZA-A 0126g PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB1119 Features Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -25 V Collector-emitter voltage VCEO -25 V Emitter-base voltage


    Original     		2SB1119 -500mA -50mA PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB1115A Features World standard miniature package. Low VCE sat : VCE(sat)=-0.2V at 1A Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -80 V Collector to emitter voltage VCEO -60 V Emitter to base voltage


    Original     		2SB1115A PDF

    2SB1116

    Abstract: 2SB1116A
    Text: ST 2SB1116 / 2SB1116A PNP Silicon Epitaxial Planar Transistor Audio frequency power amplifier and medium speed switching. The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. TO-92 Plastic Package Weight approx. 0.19g


    Original     		2SB1116 2SB1116A 2SB1116 2SB1116A PDF

    smd transistor zk

    Abstract: 2SB1114 hFE CLASSIFICATION Marking
    Text: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB1114 Features World standard miniature package. High DC current gain hFE=135 to 600. Low VCE sat : VCE(sat)=-0.3V at 1.5A Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage


    Original     		2SB1114 smd transistor zk 2SB1114 hFE CLASSIFICATION Marking PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SD1616 TRANSISTOR NPN 1. EMITTER FEATURES z Low VCE(sat) z Complementary Transistor with The 2SB1116 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		2SD1616 2SB1116 100mA PDF

    2SB1119

    Abstract: No abstract text available
    Text: Ordering number:1785A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1119/2SD1619 LF Amplifier, Electronic Governor Applications Features Package Dimensions • Very small size making it easy to provide highdensity, small-sized hybrid IC’s. unit:mm 2038


    Original     		2SB1119/2SD1619 2SB1119/2SD1619] 2SB1119 2SB1119 PDF

    2SB1116

    Abstract: 2SB1116A
    Text: UTC 2SB1116/A PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Complement to 2SD1616/A APPLICATIONS * Audio Frequency Power Amplifier * Medium Speed Switching 1 TO-92 1: Emitter 2: Collector 3: Base ABSOLUTE MAXIMUM RATINGS Ta=25°C


    Original     		2SB1116/A 2SD1616/A 2SB1116 2SB1116A PW10ms Cycle50% QW-R201-066 2SB1116 2SB1116A PDF

    2SB1118

    Abstract: 2sd1618
    Text: ¡ O rd e rin g n u m b e r .E N 1 7 8 4 B 2SB1118/2SD1618 N0.1784B PNP/NPN Epitaxial Planar Silicon Transistors Low-Voltage, High-Current Amp, _ Muting Applications Features . Low collector-to-emitter saturation voltage. . Very small size making it easy to provide high-density,


    OCR Scan     		1784B 2SB1118/2SD1618 2SB1118 4107KI/0216AT/2065MY 118/2SD1618 2SB1118 2sd1618 PDF

    2sd1609

    Abstract: No abstract text available
    Text: 2SD1609, 2SD1610 Silicon NPN Epitaxial HITACHI Application Low frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110 Outline TO -126 MOD 1 Absolute Maximum Ratings Ta = 25°C Ratings Item Symbol 2SD1609 2SD1610 Unit Collector to base voltage


    OCR Scan     		2SD1609, 2SD1610 2SB1109 2SB1110 2SD1609 2SD1609 2SD1610 PDF

    b 817

    Abstract: toshiba 2SB755 B817 2SB755 2SB897 2SB927 2SA1213 2SB1272 2sb789a 2SA1194
    Text: - £ Type No. jcg 7 |3 £ Manuf. & T T S « B m SANYO 2SA1703 2SB 793A 2SB 794 2SB 795 fé 2SB 798 2SB 799 . B S b a B H 2SB1119 2SB1122 2SAI 416 m B « 2SB1122 2SB1122 2SA1416 2SA1416 2SA1416 2SA1418 2SB 813 2SB 814 . 2SB 815 2SB 816 _ 2SB 817 ✓ 2SB 818


    OCR Scan     		2SA1703 2SB909M 2SA1705 2SB1044M 2SB1214 2SA1194 2SB1272 2SB76500 2SB1119 b 817 toshiba 2SB755 B817 2SB755 2SB897 2SB927 2SA1213 2SB1272 2sb789a PDF

    d1609

    Abstract: D1610
    Text: 2SD1609,2SD1610 Silicon NPN Epitaxial HITACHI Application Low frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110 Outline Absolute Maximum Ratings T a = 25 °C Ratings Item Symbol 2SD1609 2SD1610 Unit Collector to base voltage


    OCR Scan     		2SD1609 2SD1610 2SB1109 2SB1110 2SD1609 2SD1609, D-85622 d1609 D1610 PDF

    2SB1119

    Abstract: 2SD1619 2SD619
    Text: Ordering number: EN 1785A 2SB1119/2SD1619 PNP/NPN Epitaxial Planar Silicon Transistors LF Amp, Electronic Governor Applications Features . Very small size making it easy to provide high-density, IC*s : 2SB1119 Absolute Maximum Ratings at Ta=25°C Collector to Base Voltage


    OCR Scan     		2SB1119/2SD1619 2SB1119 2SB1119 2SD1619 2SD619 PDF

    2SD1617

    Abstract: 2SB1117
    Text: PNP SILICON TRANSISTOR 2SB1117 DESCRIPTION The 2SB1117 is a Low VcE sat transistor which has a large current capability and wide ASO. PACKAGE DIMENSIONS in m illim e te rs It is suitable fo r driver, o f solenoid or m otor, or electronic flash. FEATURES 7.0 MAX.


    OCR Scan     		2SB1117 2SB1117 2SD1617 PDF

    200A1

    Abstract: 2SB1116A
    Text: Transistors 2SB1116A USHA INDIA LTD AUDIO FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic Symbol Collector-Base Voltage VcBO Coilector-Emitter Voltage VCE0 Emitter-Base Voltage Collector Current (DC) •Collector Current (Pulse)


    OCR Scan     		2SB1116A -55M50 100mA 200A1 2SB1116A PDF

    2SB1109

    Abstract: 2SB1110 i09 b 2SD1610
    Text: HITACHI 2SB1109, 2SB1110 SILICON PNP EPITAXIAL LOW FREQUENCY HIGH VOLTAGE AMPLIFIER COMPLEM ENTARY PAIR WITH 2SD1609 AND 2SD1610 I! -1. lÎ | « 1. lîtiiiittr 2. C ollector 3. Dave DimCflSlWVt iit nun (JEDEC TO-126 MOD.) I AB S O LU TE M AXIM UM RATINGS (Ta=25°C)


    OCR Scan     		2SB1109, 2SB1110 2SDI609 2SD1610 O-126 2SBI109 2SBI110 2SB1109 2SB1110 i09 b 2SD1610 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB1109,2SB1110 Silicon PNP Epitaxial HITACHI Application Low frequency high voltage amplifier complementary pair with 2SD1609 and 2SD1610 Outline TO -126 MOD 2. Collector 3. Base Absolute Maximum Ratings Ta = 25 °C Ratings Item Symbol 2SB1109 2SB1110 Unit


    OCR Scan     		2SB1109 2SB1110 2SD1609 2SD1610 2SB1109 2SB1109, PDF

    200A1

    Abstract: 2SB1116
    Text: Transistors 2SB1116 USHA INDIA LTD AUDIO FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic Symbol Rating Unit Collector-Base Voltage VcBO -6 0 V Coilector-Emitter Voltage VCE0 -5 0 V -6 -1 -2 0.75 150 —5 5 M 5 0


    OCR Scan     		2SB1116 -55M50 100mA 200A1 2SB1116 PDF