2SB1297

Abstract: 2SD1937
Contextual Info: Transistor 2SB1297 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD1937 Unit: mm 5.0±0.2 4.0±0.2 • Absolute Maximum Ratings Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –120 V Collector to emitter voltage

Contextual Info: Transistor 2SD1937 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1297 Unit: mm 5.9±0.2 4.9±0.2 ● 0.7±0.1 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in

2SB1297

Abstract: 2SD1937
Contextual Info: Transistor 2SB1297 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD1937 Unit: mm 5.0±0.2 4.0±0.2 ● • Absolute Maximum Ratings 0.7±0.2 0.7±0.1 Ta=25˚C 13.5±0.5 ● Extremely satisfactory linearity of the forward current transfer

2SD1937

Abstract: 2SB1297 The 8002 Amplifier IC IC1001
Contextual Info: Transistor 2SD1937 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1297 Unit: mm 5.0±0.2 4.0±0.2 ● ● High collector to emitter voltage VCEO. Optimum for the driver-stage of a low-frequency and 40 to 60W output amplifier.

2SD1937

Abstract: 2SB1297
Contextual Info: Transistor 2SD1937 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1297 Unit: mm 5.0±0.2 4.0±0.2 ● ● High collector to emitter voltage VCEO. Optimum for the driver-stage of a low-frequency and 40 to 60W output amplifier.

2SD1937

Abstract: 2SB1297
Contextual Info: Transistor 2SB1297 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD1937 Unit: mm 5.0±0.2 4.0±0.2 ● • Absolute Maximum Ratings 0.7±0.2 0.7±0.1 Ta=25˚C 13.5±0.5 ● Extremely satisfactory linearity of the forward current transfer

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1297 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm 5.0±0.2 4.0±0.2 0.7±0.2 0.7±0.1 13.5±0.5 • Extremely satisfactory linearity of the forward current transfer ratio hFE

2SB1297

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1297 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm 4.0±0.2 M Di ain sc te on na tin nc ue e/ d 5.0±0.2 ue pl d in an c se ed lud pl vi an m m es

2SB1297

Abstract: 2SD1937 V643
Contextual Info: Transistor 2SD1937 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1297 M Di ain sc te on na tin nc ue e/ d Unit: mm ● 0.7±0.1 13.5±0.5 ● High collector to emitter voltage VCEO. Optimum for the driver-stage of a low-frequency and 40 to 60W

2SB1297

Contextual Info: Transistors 2SB1297 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm 5.0±0.2 4.0±0.2 0.7±0.2 0.7±0.1 13.5±0.5 • Extremely satisfactory linearity of the forward current transfer ratio hFE • High transition frequency fT

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1297 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm 5.0±0.2 4.0±0.2 M Di ain sc te on na tin nc ue e/ d • Extremely satisfactory linearity of the forward current transfer ratio hFE

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SA1264N

Abstract: 2sa143z 2SA1705 2SA1283 1818 2SA1613 2SB1421 2SA1821 2SA949 2SB1207
Contextual Info: - m Type « tt No. « Manuf. 2 S A 1 78 5 = >¥ 2 S A 1 78 8 □— A 2 S A 1 78 9 □ — A H if SANYO 2 S A 1 78 7 ^ 2 S A 1 79 0 M £ S 1 TOSHIBA NEC 2SA1432 2SA1264N 2SB966 9SA1R3? 2SA1836 B aL H I TACH! 2SB1508 * ± a FUJITSU T MATSUSHITA 2SB1546 2SB1207

2SD1915

Abstract: T0-220MF 2SD1899-Z 2SB1255 2SD1907 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895
Contextual Info: - 272 - Ta=25V, *EPiäTc=25'C -Ö r-L -a m ^ VcEO (V) 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895 2SD1896 2SD1897 2SD1899 2SD1899-Z 2SD1902 2SD1903 2SD1904 2SD1905 2SM906 2SD1907 2SD1908 2SD1909 2SD1910 2SD1911 o c n i oí o ¿JL/1 ilIL 2SD1913 2SD1914 2SD1915

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

C1360A

Abstract: 2SC4971 2SB873 2SB1615 SC1360
Contextual Info: P a c k a g e No. Applica­ tion S M ini T y p e Functions S S Mini Type (D1) M ini T y p e T M in i T y p e (D 1 2) (D22) (D5) New S Type (D34) VcEO T O -9 2 M Type T O -9 2 N L T O -9 2 L (D46) (D35) (D48) (D47) Mini Power Type (D19) MT1 T y p e M T 2 Type

2SB873

Abstract: 2SA879 D2483 2SC1360 2sc5018 2SD2360
Contextual Info: Package No. Application Functions fx (MHz) VcEO S-Mini Type <D5) Mini Type (D12) New S Type (D34) TO-92 (D46) M Type (D35) TO-92NL (D48) TO-92L (D47) Mini-Power Type MT1 Type (D37) MT2 Type (D38) (mA) »250 10 1A * < 0.15 *500 20 500 * <0.2 »250 20 500 * <0.2

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

2sa910

Abstract: UPA75HA a 1232 nec Pa75ha 2SA1302 TOSHIBA 2SA1424 2Sa795 2sa1013 2SA812 2SA1516 toshiba
Contextual Info: - m « Type No. 2SA 1232 , 2SA 1233 / 2SA 1235 _ 2SA 1236 , 2SA 1237 , 2SA 1238 » 2SA 2SA 2SA 2SA 2SA 2SA 1241 1242 1243 . 1244 „ 1245 ^ 1245A 2SA 1246 ~ 2SA 1247 2SA 1248 ~ 2SA 1249 2SA 1252 ^ •E m h SANYO a TOSHIBA % 3C $ K 2 Ä $ Ü 3 S B 5 'S S B

2SB1306

Abstract: 2sb130 2SD1832 2SB1267 2SB1268 2SB1269 2SB1270 2SB1271 2SB1272 2SB1273
Contextual Info: - 84 - Ta=25'C, *EP(ÌTc=25'C 3Ü 2SB1267 2SB1268 2SB1269 2SB1270 % f± £ =# H# ¿ÓDl¿l1 2SB1272 2SB1273 2SB1274 2SB1276 p — A =# D — A 9SR1977 □— 2SB1278 2SB1286 2SB1287 2SB1288 2SB1289 2SB1290 2SB1291 2SB1292 2SB1293 2SB1294 2SB1295 2SB1296

2sd 4515

Abstract: transistors 2sd 2500 2SB1619 B1582 2sd darlington 2sc 043 2SA audio POWER TRANSISTORS 2sa 3704 25C1317 2SC4714
Contextual Info: Transistors Selébtion Guide by Applications and Functions • Silicon Small Signal Transistors • G e n e ra l-u s e Low Frequency Am plifiers and Others Package (No.) Application S S Mini Functions Type (D1) i 2SB 14 62 [ 2SD2216 S Mini Type (D5) T Mini

2sc2188

Contextual Info: # General-use Low Frequency Amplifiers and Others continued Package (No.) IT Applica­ tion Functions J] UJ S S M ini Type (D 1 ) S Mini Type Mini Type T Mini Type New S Type (D19) (D 5) (D39) (D10) ru ( A2SB1610 In I A2SD2472 TO-92 (D49) M Type (D40) TO-92 NL