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    Toshiba America Electronic Components 2SB1375,CLARIONF(M

    TRANS PNP 60V 3A TO220NIS
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    Toshiba America Electronic Components 2SB1375

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    Bristol Electronics 2SB1375 4,850
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    2SB1375 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1375 Toshiba Low-Frequency Power Transistors (2SB Series, 2SD Series); Surface Mount Type: N; Package: TO-220NIS; Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: Low-Frequency Power Transistor; Part Number: 2SD2012 Original PDF
    2SB1375 Various Russian Datasheets Transistor Original PDF
    2SB1375 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB1375 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1375 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB1375 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB1375 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1375 Unknown Scan PDF
    2SB1375 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1375 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1375 Unknown AUDIO FREQUENCY POWER AMPLIFIER Scan PDF
    2SB1375 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1375 Toshiba Silicon PNP transistor for audio frequency power amplifiers Scan PDF
    2SB1375 Toshiba TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Scan PDF
    2SB1375,CLARIONF(M Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 3A 60V TO220-3 Original PDF
    2SB1375(F) Toshiba 2SB1375 - TRANSISTOR PNP 60V 3A TO-220 Original PDF

    2SB1375 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    b1375 transistor

    Abstract: B1375 b1375, transistor transistor B1375 2SB1375
    Text: 2SB1375 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1375 Audio Frequency Power Amplifier • Low saturation voltage: VCE sat = −1.5 V (max) • High power dissipation: PC = 25 W (Tc = 25°C) • Collector metal (fin) is covered with mold resin


    Original     		PDF 2SB1375 2SD2012 2-10R1A b1375 transistor B1375 b1375, transistor transistor B1375 2SB1375

    b1375 transistor

    Abstract: b1375 transistor B1375 b1375, transistor 2SB1375 2SD2012
    Text: 2SB1375 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1375 Audio Frequency Power Amplifier • Low saturation voltage: VCE sat = −1.5 V (max) • High power dissipation: PC = 25 W (Tc = 25°C) • Collector metal (fin) is covered with mold resin


    Original     		PDF 2SB1375 2SD2012 b1375 transistor b1375 transistor B1375 b1375, transistor 2SB1375 2SD2012

    2SB1375

    Abstract: 2sb1375 transistor
    Text: 2SB1375 PNP TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 1 Features — 2 3 High Power Dissipation: PC=25W(TC=25℃) Low voltage:VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A) Collector metal(Fin)is Coverd with Mold Regin Complementary to 2SD2012 — — —


    Original     		PDF 2SB1375 O-220 O-220 2SD2012 -50mA 2sb1375 transistor

    2SB1375

    Abstract: 2SD2012
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1375 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Collector Power Dissipation: PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -2A, IB= -0.2A)


    Original     		PDF 2SB1375 2SD2012 -50mA 2SB1375 2SD2012

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB1375 TO-220 TRANSISTOR PNP 1. BASE FEATURES z High Power Dissipation: PC=25W(TC=25℃) z Low voltage:VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A) z Collector metal(Fin)is Coverd with Mold Regin


    Original     		PDF O-220 2SB1375 O-220 2SD2012 -50mA

    2SB1375

    Abstract: 2SD2012
    Text: Inchange Semiconductor Product Specification 2SB1375 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2012 ・Low collector saturation voltage: VCE SAT =-1.5V(Max) at IC=-2A,IB=-0.2A ・Collector power dissipation:


    Original     		PDF 2SB1375 O-220F 2SD2012 O-220F) 2SB1375 2SD2012

    b1375 transistor

    Abstract: B1375 b1375, transistor transistor B1375 2SB1375 B137 2SD2012
    Text: 2SB1375 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1375 Audio Frequency Power Amplifier Unit: mm • Low saturation voltage: VCE sat = −1.5 V (max) • High power dissipation: PC = 25 W (Tc = 25°C) • Collector metal (fin) is covered with mold resin


    Original     		PDF 2SB1375 2SD2012 b1375 transistor B1375 b1375, transistor transistor B1375 2SB1375 B137 2SD2012

    2SB1375

    Abstract: 2SD2012
    Text: JMnic Product Specification 2SB1375 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2012 ・Low collector saturation voltage: VCE SAT =-1.5V(Max) at IC=-2A,IB=-0.2A ・Collector power dissipation: PC=25W(TC=25℃)


    Original     		PDF 2SB1375 O-220F 2SD2012 O-220F) 2SB1375 2SD2012

    B1375

    Abstract: 2SB1375 2SD2012
    Text: 2SB1375 東芝トランジスタ シリコンPNP三重拡散形 2SB1375 ○ 低周波電力増幅用 • 単位: mm 飽和電圧が低い。 : VCE sat = −1.5 V (最大) (IC = −2 A, IB = −0.2 A) • コレクタ損失が大きい。 • 2SD2012 とコンプリメンタリになります。


    Original     		PDF 2SB1375 2SD2012 2-10R1A 20070701-JA B1375 2SB1375 2SD2012

    2SD2012

    Abstract: 2SB1375
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB1375 TO-220 TRANSISTOR PNP 1. BASE FEATURES z High Power Dissipation: PC=25W(TC=25℃) z Low voltage:VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A) z Collector metal(Fin)is Coverd with Mold Regin


    Original     		PDF O-220 2SB1375 O-220 2SD2012 -50mA 2SD2012 2SB1375

    2SB1375

    Abstract: 2sb1375 equivalent 2SD2012
    Text: SavantIC Semiconductor Product Specification 2SB1375 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2012 ·Low collector saturation voltage: VCE SAT =-1.5V(Max) at IC=-2A,IB=-0.2A ·Collector power dissipation: PC=25W(TC=25 )


    Original     		PDF 2SB1375 O-220F 2SD2012 O-220F) 2SB1375 2sb1375 equivalent 2SD2012

    transistor

    Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220
    Text: Part Number 2SD1160 N 2SD1140 N 2SD1224 N 2SD1508 N 2SD1631 N 2SD1784 Y 2SD2481 N 2SB907 N 2SD1222 N 2SD1412A 2SD2686 * 2SD1658 N 2SD2088 N 2SD2352 N 2SD2461 N 2SB906 N 2SD1221 N 2SB1375 N 2SD2012 N 2SD2462 N 2SB1640 N 2SD2525 N 2SD2353 N 2SB1667 Y 2SB1642 N


    Original     		PDF 2SD1160 2SD1140 2SD1224 2SD1508 2SD1631 2SD1784 2SD2481 2SB907 2SD1222 2SD1412A transistor power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220

    b1375 transistor

    Abstract: b1375
    Text: 2SB1375 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1375 Audio Frequency Power Amplifier Unit: mm • Low saturation voltage: VCE sat = −1.5 V (max) • High power dissipation: PC = 25 W (Tc = 25°C) • Collector metal (fin) is covered with mold resin


    Original     		PDF 2SB1375 2SD2012 b1375 transistor b1375

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SB1375 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 375 Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER • 10 ì 0.3 Low Saturation Voltage : V^ e sat = —1-5V (Max.) (IC= -2 A , IB = —0.2A) High Power Dissipation : P q = 25W (Tc = 25°C)


    OCR Scan     		PDF 2SB1375 2SD2012

    2SB1375

    Abstract: 2SD2012 transistor 2sd2012
    Text: 2SB1375 TO SH IBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 375 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER • • • • Low Saturation Voltage : V^ e sat ~ —1-5V (Max.) (In = —2A, IB = -0 .2A ) High Power Dissipation : P£ = 25W (Te = 25°C)


    OCR Scan     		PDF 2SB1375 2SD2012 2SB1375 transistor 2sd2012

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1375 U nit in mm A U D IO FREQUENCY PO W ER AMPLIFIER. I0±0.3 • • • • 0 3 .2±o .2 24* 0.2 Low Saturation Voltage : V çE sat = —1.5V (Max.) (IC = -2 A , IB = —0.2A) High Power Dissipation : P ç = 25W (Tc = 25°C)


    OCR Scan     		PDF 2SB1375 2SD2012 2-10R1A

    2SB1375

    Abstract: 2SD2012 2sd2012 transistor
    Text: TOSHIBA 2SB1375 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 375 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER • Low Saturation Voltage : sat “ —1-5V (Max.) (IC= —2A, IB = —0.2A) • High Power Dissipation : P0 = 25W (Te = 25°C) • Collector Metal (Fin) is Coverd with Mold Regin


    OCR Scan     		PDF 2SB1375 2SD2012 2SB1375 2SD2012 2sd2012 transistor

    2SB1375

    Abstract: 2SD2012
    Text: 2SB1375 TO SH IBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 375 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER • • • • Low Saturation Voltage : V^ e sat ~ —1-5V (Max.) (In = —2A, IB = -0 .2 A ) High Power Dissipation : P£ = 25W (Te = 25°C)


    OCR Scan     		PDF 2SB1375 2SD2012 2SB1375

    S2520

    Abstract: No abstract text available
    Text: TOSHIBA 2SB1375 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 5 ^ R 1 3 7 5 mm h it • mm m mm Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER • 10 + 0.3 Low Saturation Voltage : V c e sat = —1-5V (Max.) (IC - —2A, IB ——0.2A) High Power Dissipation \ P^ —2-5W (Tc —25°C)


    OCR Scan     		PDF 2SB1375 2SD2012 S2520

    2sb1375 transistor

    Abstract: 2SB1375
    Text: TO SHIBA 2SB1375 Transistor Unit in mm Silicon PNP Triple Diffused Type Audio Frequency Power Amplifier Features • Low Saturation Voltage - VCE sat = -1 .5V(Max.) de = -2A, lB = -0.2A) • High Power Dissipation - Pc = 25W (Te = 25~C) • Collector Metal (Fin) is covered with m old resin


    OCR Scan     		PDF 2SB1375 1ui-10 2sb1375 transistor 2SB1375

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1375 AUDIO FREQUENCY POWER AMPLIFIER. Unit in mm 10 ± 0 . 3 . Low Saturation Voltage : VcE sat =-l.5V(Max.) . 0 3 . 2 i 0.2 2. 7 ± 0. 2 -f~ (IC=-2A, Ib =-0.2A) . High Power Dissipation : Pc=25W (Tc=25°C) . Collector Metal(Fin) is Coverd with Mold Regin


    OCR Scan     		PDF 2SB1375 2SD2012

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


    OCR Scan     		PDF O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346

    C3182N

    Abstract: C3888A 2sd 3420 2SC2268 2sc2073-2 EP 1408 3884A 3182N 2SD 388A 2SA855
    Text: •DISCONTINUED ty p e lis t T h e fo llo w in g D evices are d isco n tin u ed as o f J u n e 1994, a n d a re n o lo n g e r a v a ila b le . Please refer o f th e list fo r later device a lte rn a tiv e s . T y p e No. R ecom m end R eplacem ent T ypp Nn


    OCR Scan     		PDF 2SA51 2SA57 2SC3281 2SD1571 C3182N C3888A 2sd 3420 2SC2268 2sc2073-2 EP 1408 3884A 3182N 2SD 388A 2SA855