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Text: 2SB139060ML 2SB139060ML La 2SB139060ML Lb Ø Ø Ø Ø ESD Ø Ø Ø 1390µm X 1390µm; Ø 280±20µm La 1390µm Lb 1295µm 2SB139060MLYY @8.3ms VRRM 60 V IFAV 3 A IFSM 80 A TJ 125 °C TSTG -40~125 °C Tamb=25 VBR IR=0.5mA 60 - V VF IF=3A - 0.75 V IR VR=60V
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Text: 2SB139060ML 2SB139060ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB139060ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø High ESD capability; Ø High surge capability; Ø
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Text: 2SB139060ML 2SB139060ML SCHOTTKY BARRIER DIODE CHIPS Ø 2SB139060ML is a schottky barrier diode chips Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection; Ø High ESD capability; Ø High surge capability; Ø Packaged products are widely used in switching
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Text: 2SB139060ML 2SB139060ML 肖特基二极管芯片 描述 Ø 2SB139060ML是采用硅外延工艺制造的肖特基二 极管芯片； Ø 损耗功率小，效率高； Ø 高ESD能力； Ø 高抗浪涌电流能力； Ø 具有瞬态反应保护能力的保护环结构；
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