Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SB1463 Search Results

    SF Impression Pixel

    2SB1463 Price and Stock

    Panasonic Electronic Components 2SB1463GRL

    TRANS PNP 150V 0.05A SSMINI3-F3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SB1463GRL Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Panasonic Electronic Components 2SB1463JRL

    TRANS PNP 150V 0.05A SSMINI3-F1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SB1463JRL Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    2SB1463 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1463 Panasonic Silicon PNP epitaxial planer type Original PDF
    2SB1463 Panasonic Silicon PNP epitaxial planer type Original PDF
    2SB1463 Panasonic Silicon PNP Transistor Original PDF
    2SB1463 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1463 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1463 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1463GRL Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 150VCEO 50MA SSMINI-3 Original PDF
    2SB1463IT Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SB1463J Panasonic Transistor for high breakdown voltage low-noise amplification. Complementary to 2SC2440J Original PDF
    2SB1463JRL Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 150VCEO 50MA SSMINI-3 Original PDF

    2SB1463 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SB1463J

    Abstract: SC-89
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 0.12+0.03 –0.01 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification


    Original     		2002/95/EC) 2SB1463J 2SC2440J 2SB1463J SC-89 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SB1463J 0.12+0.03 –0.01


    Original     		2002/95/EC) 2SD2240J 2SB1463J PDF

    2SB1463J

    Abstract: 2SD2240J SC-89
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SB1463J


    Original     		2002/95/EC) 2SD2240J 2SB1463J 2SB1463J 2SD2240J SC-89 PDF

    2sc2440

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Package • High collector-emitter voltage (Base open) VCEO


    Original     		2002/95/EC) 2SB1463G 2SC2440G 2sc2440 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Features ue pl d in an c


    Original     		2002/95/EC) 2SB1463G 2SC2440G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SB1463J 0.12+0.03 –0.01


    Original     		2002/95/EC) 2SD2240J 2SB1463J PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SB1463 Silicon PNP epitaxial planar type Unit: mm For high breakdown voltage low-frequency amplification Complementary to 2SD2240 0.2+0.1 –0.05 0.15+0.1 –0.05 0.4 5˚ Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO


    Original     		2SB1463 2SD2240 SC-75 PDF

    2SB1463J

    Abstract: SC-89
    Text: Transistors 2SB1463J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SC2440J 0.12+0.03 –0.01 0 to 0.02 0.50 (0.50) • Absolute Maximum Ratings Ta = 25°C


    Original     		2SB1463J 2SC2440J 2SB1463J SC-89 PDF

    2SB1463

    Abstract: 2SD2240
    Text: Transistor 2SB1463 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD2240 Unit: mm 1.6±0.15 • Features Unit Collector to base voltage VCBO –150 V Collector to emitter voltage VCEO –150 V Emitter to base voltage


    Original     		2SB1463 2SD2240 2SB1463 2SD2240 PDF

    2SB1463J

    Abstract: 2SD2240J SC-89
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SB1463J 0.12+0.03 –0.01


    Original     		2002/95/EC) 2SD2240J 2SB1463J 2SB1463J 2SD2240J SC-89 PDF

    2SB1463

    Abstract: 2SD2240
    Text: Transistor 2SB1463 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD2240 Unit: mm 1.6±0.15 • Features Unit Collector to base voltage VCBO –150 V Collector to emitter voltage VCEO –150 V Emitter to base voltage


    Original     		2SB1463 2SD2240 2SB1463 2SD2240 PDF

    2SB1463

    Abstract: 2SD2240 SC-75 SJC00089BED
    Text: Transistors 2SB1463 Silicon PNP epitaxial planar type Unit: mm For high breakdown voltage low-frequency amplification Complementary to 2SD2240 0.2+0.1 –0.05 0.15+0.1 –0.05 1˚ 3 2 0.3 1 (0.5) (0.5) 1.0±0.1 1.6±0.1 (0.4) • High collector-emitter voltage (Base open) VCEO


    Original     		2SB1463 2SD2240 2SB1463 2SD2240 SC-75 SJC00089BED PDF

    2SB1463J

    Abstract: SC-89
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SC2440J 0.12+0.03 –0.01


    Original     		2002/95/EC) 2SB1463J 2SC2440J 2SB1463J SC-89 PDF

    2SB1463J

    Abstract: 2SD2240J SC-89
    Text: Transistors 2SD2240J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SB1463J 0.12+0.03 –0.01 0 to 0.02 0.50 (0.50) • Absolute Maximum Ratings Ta = 25°C


    Original     		2SD2240J 2SB1463J 2SB1463J 2SD2240J SC-89 PDF

    2SB1463J

    Abstract: 2SD2240J SC-89
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SB1463J


    Original     		2002/95/EC) 2SD2240J 2SB1463J 2SB1463J 2SD2240J SC-89 PDF

    2SB1463

    Abstract: 2SD2240
    Text: Transistor 2SB1463 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD2240 Unit: mm 0.2+0.1 –0.05 3 Symbol Ratings Unit VCBO –150 V Collector to emitter voltage VCEO –150 V Emitter to base voltage


    Original     		2SB1463 2SD2240 2SB1463 2SD2240 PDF

    SC-75

    Abstract: 2SB1463 2SD2240
    Text: Transistors 2SB1463 Silicon PNP epitaxial planar type Unit: mm For high breakdown voltage low-frequency amplification Complementary to 2SD2240 0.2+0.1 –0.05 0.15+0.1 –0.05 • High collector-emitter voltage Base open VCEO • Low noise voltage NV • SS-Mini type package, allowing downsizing of the equipment and


    Original     		2SB1463 2SD2240 SC-75 2SB1463 2SD2240 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Package • High collector-emitter voltage (Base open) VCEO


    Original     		2002/95/EC) 2SB1463G 2SC2440G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Features ■ Package • High collector-emitter voltage (Base open) VCEO


    Original     		2002/95/EC) 2SB1463G 2SC2440G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Package • High collector-emitter voltage (Base open) VCEO


    Original     		2002/95/EC) 2SB1463G 2SC2440G PDF

    2SB1463

    Abstract: 2SD2240 SC-75 SSMini3-G1
    Text: Transistors 2SB1463 Silicon PNP epitaxial planar type Unit: mm For high breakdown voltage low-frequency amplification Complementary to 2SD2240 0.2+0.1 –0.05 0.15+0.1 –0.05 Collector-emitter voltage Base open Emitter-base voltage (Collector open) Collector current


    Original     		2SB1463 2SD2240 SC-75 2SB1463 2SD2240 SC-75 SSMini3-G1 PDF

    2SB1463J

    Abstract: SC-89
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 0.12+0.03 –0.01 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification


    Original     		2002/95/EC) 2SB1463J 2SC2440J 2SB1463J SC-89 PDF

    D2375

    Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
    Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A


    OCR Scan     		125mW 2SC4627 2SC5021 2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 D2375 D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526 PDF

    D1276A

    Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
    Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463


    OCR Scan     		2SC4609 2SC4808 2SA1806 2SC4627 2SA1790 2SC4626 2SC4655 2SD2345 2SC46 12SA1 D1276A B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A PDF