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    Amphenol Aerospace JT06RE-18-32SB(161)(LC)

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    Amphenol Aerospace JTG06RE-18-32SB(161)(LC)

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    ITT Interconnect Solutions CIR02R20-2S-B16-101

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    ITT Interconnect Solutions CIR02R22-22S-B16-101

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    Amphenol Corporation JT06RE-18-32SB(161)(LC)

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    Mouser Electronics JT06RE-18-32SB(161)(LC)
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    2SB161 Datasheets (36)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB161 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB161 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SB161 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB161 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SB161 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB161 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB161 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB161 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB161 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SB161 Unknown Cross Reference Datasheet Scan PDF
    2SB1610 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1610 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1611 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1611 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1612 Panasonic PNP Transistor Original PDF
    2SB1612 Panasonic Silicon PNP epitaxial planer type Original PDF
    2SB1612 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1612 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1613 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1613 Unknown Japanese Transistor Cross References (2S) Scan PDF

    2SB161 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD2474 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1612 Unit: mm +0.1 1.0–0.2 0.4±0.08 2.5±0.1 45° +0.25 0.4max. Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment


    Original     		2SD2474 2SB1612 200MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD2474 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1612 Unit: mm 45° +0.1 1.0–0.2 0.4±0.08 +0.25 0.4max. Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment


    Original     		2SD2474 2SB1612 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SB1612 Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2474 Unit: mm 1.5±0.1 45° * 1.0–0.2 0.5±0.08 1.5±0.1 Ta=25˚C 0.4±0.04 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo


    Original     		2SB1612 2SD2474 PDF

    2SD2474

    Abstract: 2SB1612
    Text: Transistor 2SD2474 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1612 Unit: mm +0.1 1.0–0.2 0.4±0.08 2.5±0.1 45° +0.25 0.4max. Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment


    Original     		2SD2474 2SB1612 2SD2474 2SB1612 PDF

    2SB1617

    Abstract: B1617
    Text: 2SB1617 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington 2SB1617 Micro Motor Drive, Hammer Drive Applications Power Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A)


    Original     		2SB1617 2SB1617 B1617 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SB1614 Silicon PNP epitaxial planer type Unit: mm For low-frequency amplification 4.5±0.1 1.6±0.2 Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation


    Original     		2SB1614 PDF

    2F P marking

    Abstract: 2SD2474 at maga 2SB1612
    Text: Transistor 2SB1612 Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2474 Unit: mm 45° • Absolute Maximum Ratings * 1.0–0.2 +0.1 0.4±0.08 +0.25 0.4max. Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment


    Original     		2SB1612 2SD2474 2F P marking 2SD2474 at maga 2SB1612 PDF

    2SB1612

    Abstract: 2SD2474
    Text: Transistor 2SB1612 Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2474 Unit: mm 45° • Absolute Maximum Ratings * 1.0–0.2 +0.1 0.4±0.08 +0.25 0.4max. Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment


    Original     		2SB1612 2SD2474 2SB1612 2SD2474 PDF

    2SB1617

    Abstract: B1617
    Text: 2SB1617 東芝トランジスタ シリコンPNPエピタキシャル形 2SB1617 ○ マイクロモータドライブハンマドライブ用 ○ スイッチング用 ○ 電力増幅用 • • 単位: mm 直流電流増幅率が高い。 : hFE = 2000 最小 (VCE = −2 V, IC = −1 A)


    Original     		2SB1617 20070701-JA 2SB1617 B1617 PDF

    2SD2478

    Abstract: D426 2SB1616 b426 2SB1616 equivalent SPEC-B426
    Text: Transistors 2SB1616 2SD2478 SPEC-B426 (94L-1129-D426) 301


    Original     		2SB1616 2SD2478 SPEC-B426) 94L-1129-D426) 2SD2478 D426 2SB1616 b426 2SB1616 equivalent SPEC-B426 PDF

    2SB1617

    Abstract: B1617
    Text: 2SB1617 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington 2SB1617 Micro Motor Drive, Hammer Drive Applications Power Switching Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max)


    Original     		2SB1617 2SB1617 B1617 PDF

    2SB1614

    Abstract: No abstract text available
    Text: Transistors 2SB1614 Silicon PNP epitaxial planer type Unit: mm For low-frequency amplification 4.5±0.1 1.6±0.2 Symbol Rating 3.0±0.15 −20 V Collector to emitter voltage VCEO −20 V Emitter to base voltage VEBO −5 V Peak collector current ICP −2.4


    Original     		2SB1614 2SB1614 PDF

    2SB1614

    Abstract: No abstract text available
    Text: Transistors 2SB1614 Silicon PNP epitaxial planer type Unit: mm For low-frequency amplification 4.5±0.1 1.6±0.2 Symbol Rating 3.0±0.15 −20 V Collector to emitter voltage VCEO −20 V Emitter to base voltage VEBO −5 V Peak collector current ICP −2.4


    Original     		2SB1614 2SB1614 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB1617 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington 2SB1617 Micro Motor Drive, Hammer Drive Applications Power Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A)


    Original     		2SB1617 PDF

    2SB1617

    Abstract: No abstract text available
    Text: T O S H IB A 2SB1617 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON 2 S B 1 617 Unit in mm MICRO MOTOR DRIVE, H AM M ER DRIVE APPLICATIONS PO W ER SWITCHING APPLICATIONS 8.0 ± 0.2 PO W ER AM PLIFIER APPLICATION • • High DC Current Gain : hpg —2000 (Min.)


    OCR Scan     		2SB1617 100ms5^ 2SB1617 PDF

    5027A

    Abstract: No abstract text available
    Text: TOSHIBA 2SB1617 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON 9 <; R 1 fi 1 7 MICRO MOTOR DRIVE, H AM M ER DRIVE APPLICATIONS Unit in mm PO W ER SWITCHING APPLICATIONS 8.0 ± 0.2 PO W ER AM PLIFIER APPLICATION tm • High DC Current Gain • Low Saturation Voltage


    OCR Scan     		2SB1617 5027A PDF

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Transistor 2SB1612 Silicon PNP epitaxial planer type For low -frequency am plification U nit: mm C om ple m e ntary to 2S D 2474 • Features • Low collector to emitter saturation voltage V c E s a t • Mini Power type package, allowing downsizing of the equipment


    OCR Scan     		2SB1612 200MHz PDF

    2SB1617

    Abstract: No abstract text available
    Text: TOSHIBA 2SB1617 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON 2 SB1617 Unit in mm MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS POWER SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATION • • High DC Current Gain : hpE —2000 (Min.) Low Saturation Voltage : V ç;e (sat)“ —1-5V (Max.)


    OCR Scan     		2SB1617 2SB1617 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB1617 SILICON PNP EPITAXIAL TYPE PCT PROCESS (DARLINGTON POWER) U nit in mm MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. POWER SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATION. • • High DC Current Gain : hp'E = 2000 (M in.) ( V q e = —2V, I q = —1A)


    OCR Scan     		2SB1617 --10mA, PDF

    c4574

    Abstract: 2SD2478 2SC4574 b426 2SB1616
    Text: 2SB1616 2SD2478 Transistors Medium Power Transistor Motor or Relay drive (—80V, —4 A) 2SB1616 •Absolute maximum ratings (Ta=25"C) •Features 1 ) D arlington connection for a high hre. 2 ) Built-in resistor betw een base and emitter. 3 ) Built-in dam per doide.


    OCR Scan     		2SB1616 2SD2478 --80V, 2SB1616 C4574. 100ms Ta--25 94L-1129-D426) c4574 2SD2478 2SC4574 b426 PDF

    2SB1617

    Abstract: No abstract text available
    Text: 2SB1617 TO SH IBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON 2 S B 1 617 MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS POWER SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATION • High DC Current Gain : hpE —2000 (Min.) • T-jOw S a tu r a tio n V oltaire


    OCR Scan     		2SB1617 2SB1617 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SB1617 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON 2 S B 1 617 MICRO MOTOR DRIVE, H AM M ER DRIVE APPLICATIONS Unit in mm PO W ER SWITCHING APPLICATIONS 8.0 ± 0.2 PO W ER AM PLIFIER APPLICATION • High DC Current Gain : hjrjr; = 2000 (Min.)


    OCR Scan     		2SB1617 PDF

    c4574

    Abstract: No abstract text available
    Text: Transistors Medium Power Transistor Motor or Relay drive (—80V, —4 A) 2SB1616 iA bsolute maximum ratings (T a = 2 5 ”C ) •F e a tu re s Sym bol L im its 1 ) Darlington connection for a high hre. 2 ) Built-in resistor between base and em itter. 3 ) Built-in dam per doide.


    OCR Scan     		2SB1616 C4574. 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP. 7020c c4574 PDF

    2SD2449

    Abstract: 2SD1509 2SD1410 2S01088 2SC982TM 2SD2088(F) 2sd799
    Text: Darlington Transistors F1 W c E O 30V 50V 60V 80V 100V 160V 250V 300V 400V 450V 2SC982TM 0.3A 1.SA 40V 2SD1140 2SD1224 2SD1508 2SD1631 2SD2481 2SB1067 2SD1658 2A 2SD1509 2SD2088 2SD2208 2SB1411 2SD2206 2SB1457 2SB1617 2SD2480 2SB677 2SD687 3A 4A SA 2SD2129


    OCR Scan     		2SC982TM 2SD1140 2SD1224 2SD1508 2SD1631 2SD2481 2SB677 2SD687 2SB907 2SD1222 2SD2449 2SD1509 2SD1410 2S01088 2SC982TM 2SD2088(F) 2sd799 PDF