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    2SB163 Datasheets (37)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB163 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB163 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SB163 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SB163 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB163 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB163 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB163 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB163 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB163 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SB163 Unknown Cross Reference Datasheet Scan PDF
    2SB1630 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1630 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1630 Panasonic Silicon Medium Power Transistors Scan PDF
    2SB1631 Panasonic Silicon PNP epitaxial planar type Original PDF
    2SB1631 Panasonic Silicon PNP epitaxial planar type Original PDF
    2SB1631 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1631 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1631 Panasonic Silicon Medium Power Transistors Scan PDF
    2SB1631P Panasonic Silicon PNP Epitaxial Planar Type Power Transistor Original PDF
    2SB1631Q Panasonic Silicon PNP Epitaxial Planar Type Power Transistor Original PDF

    2SB163 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1631

    Abstract: No abstract text available
    Text: Power Transistors 2SB1631 Silicon PNP epitaxial planar type Unit: mm • Absolute Maximum Ratings TC = 25°C 5.0±0.1 1.0±0.2 2.5±0.1 13.0±0.2 • High forward current transfer ratio hFE which has satisfactory linearity • Low collector to emitter saturation voltage VCE sat


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    PDF 2SB1631 2SB1631

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1631 Silicon PNP epitaxial planar type For power amplification 1.0±0.2 5.0±0.1 2.5±0.1 M Di ain sc te on na tin nc ue e/ d • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE sat


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    PDF 2SB1631

    2SB1638

    Abstract: 2SB1638A
    Text: Power Transistors 2SB1638, 2SB1638A Silicon PNP epitaxial planar type Unit: mm 7.0±0.3 For low-voltage switching 3.5±0.2 M Di ain sc te on na tin nc ue e/ d • Features 0.8±0.2 7.2±0.3 3.0±0.2 0.85±0.1 1.1±0.1 1.0±0.2 ● Low collector to emitter saturation voltage VCE sat


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    PDF 2SB1638, 2SB1638A 2SB1638 2SB1638A

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1638, 2SB1638A Silicon PNP epitaxial planar type Unit: mm 7.0±0.3 For low-voltage switching Low collector to emitter saturation voltage VCE sat Satisfactory linearity of foward current transfer ratio hFE I type package enabling direct soldering of the radiating fin to


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    PDF 2SB1638, 2SB1638A 2SB1638

    2SB1638

    Abstract: 2SB1638A
    Text: Power Transistors 2SB1638, 2SB1638A Silicon PNP epitaxial planar type Unit: mm 7.0±0.3 For low-voltage switching +0.3 1.1±0.1 1.0±0.2 ● Low collector to emitter saturation voltage VCE sat Satisfactory linearity of foward current transfer ratio hFE I type package enabling direct soldering of the radiating fin to


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    PDF 2SB1638, 2SB1638A 2SB1638 2SB1638 2SB1638A

    2sb163

    Abstract: 2SB1631
    Text: Power Transistors 2SB1631 Silicon PNP epitaxial planar type For power amplification Unit: mm 5.0±0.1 • Features ■ Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage VCEO


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    PDF 2SB1631 2sb163 2SB1631

    2SB1631

    Abstract: No abstract text available
    Text: Power Transistors 2SB1631 Silicon PNP epitaxial planar type For power amplification 1.0±0.2 2.5±0.1 • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE sat • Allowing automatic insertion with radial taping


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    PDF 2SB1631 2SB1631

    2SB1631

    Abstract: No abstract text available
    Text: Power Transistors 2SB1631 Silicon PNP epitaxial planar type For power amplification 10.0±0.2 18.0±0.5 Solder Dip • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)


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    PDF 2SB1631 2SB1631

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    Untitled

    Abstract: No abstract text available
    Text: 2S B 16 39 Transistors 2 S D 2 3 1 8 / 2 S D 19 44 High-current gain Power Transistor —60V, —3A 2SB1639 I • A b so lu te maximum ratings ( T a = 2 5 t) • F ea tu res 1 ) H ig h D C c u rre n t g a in . (T y p .4 4 0 a t V c e / I c = — 4 V / - •0 .5 A )


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    PDF 2SB1639 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP. 7020c

    2sd1944

    Abstract: 2SD2316 2SB1639 2SD2318
    Text: 2SB1639 2SD2318 / 2SD1944 Transistors I High-current gain Power Transistor —60V, —3A 2S B 1639 • A b s o lu te maxim um ratings (Ta=25'C ) •F e a tu re s 1 ) High DC current gain. (T yp.440 at 2 ) L o w Vce(m i). ( T y p .— 0 . 2 V V c e/ I c =


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    PDF 2SB1639 2SD2318 2SD1944 2SB1639 2SD1944. O-220FN Tc-25 2sd1944 2SD2316

    2SD1944

    Abstract: No abstract text available
    Text: 2SB1639 2SD2318 / 2SD1944 Transistors I High-current gain Power Transistor —60V, —3 A 2SB1639 •F e a tu re s 1 ) High DC current gain. (Typ.440 at Vce/lc*=—4V/—0.5A) 2 ) Low VcE(sai). (Typ,—0 ,2 V fit Ic/Ib =—2 /—0.05A) 3 ) Complements the 2SD1944.


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    PDF 2SB1639 2SD2318 2SD1944 2SD1944. --60V, 2SB1639 2SB1Q39 -220FN 96-244-D302) 2SD1944

    2SD1944

    Abstract: 2SD2316 2SD231B 2SB1639 2SD2318
    Text: 2SB1639 2SD2318 / 2SD1944 Transistors I High-current gain Power Transistor —60V, —3A 2S B 1639 • A b s o lu te maxim um ratings (Ta=25'C ) •F e a tu re s 1 ) High DC current gain. (T yp.440 at 2 ) L o w Vce(m i). ( T y p .— 0 . 2 V V c e/ I c =


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    PDF 2SB1639 2SD2318 2SD1944 2SB1639 2SD1944. O-220FN Tc-25 50//A 2S0231B 2SD1944 2SD2316 2SD231B

    e50p

    Abstract: 2SB1639 2SD2318
    Text: High-current gain Power Transistor 60V, 3A 2SD2318 •Features 1) High DC current gain. 2) Low saturation voltage. •External dimensions (Units: mm) (Typ. VcE(sat) =0.5V at Ic / Ib=2A / 0.5A) 3) Complements the 2SB1639.


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    PDF 2SD2318 2SB1639. SC-63 100ms e50p 2SB1639 2SD2318

    2SB1632

    Abstract: 2sc3211 2sc3795 2sc3743 2SC2841 2SC3171 2SC3210 2SC3403 2SC3527 2SC3528
    Text: Transistors Selection Guide by Applications and Functions • Switching Power Transistors Appli­ V cbo cation (V) VcEO (V ) Io (A) VcE (sat) (V) lc Ib tf (/JS) (A) (mA) 150/200/ 80 5 <1.6 5 IW 1 250 330 200 7 < 1 5 500 0.75 500 400 2 1 <1 200 1 Package (No.)


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    PDF r0-220 -220F O-220E O-220D 2sd1274Ã 2sd1680* 2sc4986 2SC3403 2SC3825 2SC2841 2SB1632 2sc3211 2sc3795 2sc3743 2SC2841 2SC3171 2SC3210 2SC3527 2SC3528

    X9116WM8I-2.7T1

    Abstract: No abstract text available
    Text: Transistors Selection Guide by Applications and Functions •Switching Power Transistors Appli­ V cbo VcEO Io VcE (sat) cation (V) (V) (A) (V) 150/200/ 250 80 5 <1.6 Package (No.) lc tf (/JS) Ib MT3 (D43) (A) (mA) 5 IW MT4 (D46) TO TO-220E TO-220D N Type


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    PDF -220F O-220E O-220D Z74/MB 2SC3210 2SC3171 2SC3527 2SC3285 2SC3506 2SC5156 X9116WM8I-2.7T1

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


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    PDF

    2SB0774

    Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
    Text: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)


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    PDF O-126 2SC2258 2SC3063 2SC5340 O-202 T0-220 O-220F 2SC2923 2SC4714 2SC3942 2SB0774 2SA2004 2SB160 2SB642

    3866S

    Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
    Text: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series


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    PDF 1020G N12861 N12B62 MN1381 MN13811 MN13821 15P0802 15P5402 58851A 70803A 3866S transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515

    D2375

    Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
    Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A


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    PDF 125mW 2SC4627 2SC5021 2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 D2375 D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526

    2SC5283

    Abstract: 2SC5157
    Text: Transistors Selection Guide by Applications and Functions I Switching Power Transistors o > > Appli­ cation VcEO lc (V) (A) VcE(sat) (V) lc Package (No.) 1b (p s | (A) (mA) MT3 (D40) MT4 r 0 -220(a) TO-220F(a) TO-220E T0220D N Type (055) (D52) {041} (D59)


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    PDF O-220F O-220E T0220D 2SD1274/A6 2SC3403 2SC3825 2SC3210 2SC3171 2SC3527 2SC3850 2SC5283 2SC5157

    IMX5T108

    Abstract: DTC144EN 4AE12 MP5C02 2SB1043 ICP-S2.3TN dta115ef DTA144TSATP DTC124EVA mmst8598t146
    Text: Transistors •Maintenance product list Maintenance model Alternate model Maintenance model Alternate model 2SA1543M 2SA933ASTP 2SC5040K 2SC2412KT146 2SA1549 2SA830STP 2SC5072 2SC4617TL 2SA1554 2SA821STP 2SD1469M 2SD1865TV2 2SA1809 2SA1776TV2 2SD1778 2SD1855


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    PDF 2SA1543M 2SA1549 2SA1554 2SA1809 2SA1861 2SA1886 2SA806 2SA825S 2SB1008 2SB1033 IMX5T108 DTC144EN 4AE12 MP5C02 2SB1043 ICP-S2.3TN dta115ef DTA144TSATP DTC124EVA mmst8598t146

    C2021M

    Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
    Text: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)


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    PDF 2SC2021LJNE) 2SB821 2SA937ALN \2SC2021LN 2SB1276 2021M 2SA937AM 2SB737 2SD786 2SA1137 C2021M B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240