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    2SB1658 Search Results

    2SB1658 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1658 NEC AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS Original PDF
    2SB1658 Unknown Japanese Transistor Cross References (2S) Scan PDF

    2SB1658 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SB1658

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SB1658 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For audio frequency amplifier and switching applications PINNING PIN


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    2SB1658 O-126 -200mA -100mA -50mA 2SB1658 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB1658 Plastic-Encapsulate Transistors PNP Features TO-126 Power dissipation PCM: 1 W Tamb=25℃ Collector current ICM: -5 A Collector-base voltage -30 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. EMITTER 2. COLLECTOR 3. BASE


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    2SB1658 O-126 -50mA -200mA -100mA PDF

    2sb1658

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB1658 TRANSISTOR PNP TO-126 FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER Collector current -5 A ICM: Collector-base voltage -30 V V(BR)CBO: Operating and storage junction temperature range


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    O-126 2SB1658 O-126 -50mA -200mA -100mA 2sb1658 PDF

    2SB1658

    Abstract: 2SB16
    Text: JMnic Product Specification 2SB1658 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Low collector saturation voltage ・High DC current gain APPLICATIONS ・For audio frequency amplifier and switching applications PINNING PIN DESCRIPTION


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    2SB1658 O-126 -200mA -100mA -50mA 2SB1658 2SB16 PDF

    2SB1658

    Abstract: No abstract text available
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1658 DESCRIPTION •High Collector Current -IC= -5A ·High DC Current Gain: hFE= 150~600@IC= -1A ·Low-Collector Saturation Voltage: VCE sat = -0.15V(Max.)@IC= -1A APPLICATIONS


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    2SB1658 2SB1658 PDF

    2SB1658

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SB1658 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Low collector saturation voltage ・High DC current gain APPLICATIONS ・For audio frequency amplifier and switching applications PINNING


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    2SB1658 O-126 -100mA -50mA 2SB1658 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB1658 TRANSISTOR PNP TO – 126 FEATURES z Low VCE(sat) z High DC Current Gain 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol


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    O-126 2SB1658 -50mA -100mA -200mA PDF

    d1063

    Abstract: 2SB1658 C10535E C10943X MEI-1202 D10630EJ1V0DS00
    Text: DATA SHEET SILICON TRANSISTOR 2SB1658 AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS FEATURES • Low VCE sat VCE(sat) = −0.15 V Max (@lC/lB = 1.0 A/50 mA) Collector to Base Voltage Collector to Emitter Voltage VCB0 VCE0 −30 V


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    2SB1658 d1063 2SB1658 C10535E C10943X MEI-1202 D10630EJ1V0DS00 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SB1658 TRANSISTOR PNP TO-252-2L FEATURES z Low VCEsat VCEsat=-0.15V Max(IC/IB=1.0A/50mA) z High DC Current gain hEF=150 to 600(VCE= -2V, IC= -1A) 1.BASE 2.COLLECTOR


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    O-252-2L 2SB1658 O-252-2L A/50mA) -50mA -100mA -200mA PDF

    2SB1658

    Abstract: No abstract text available
    Text: 2SB1658 2SB1658 TRANSISTOR PNP TO-126 FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER Collector current ICM: -5 A Collector-base voltage -30 V V(BR)CBO: Operating and storage junction temperature range 2. COLLECTOR 3. BASE 123 TJ, Tstg: -55℃ to +150℃


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    2SB1658 O-126 -50mA -200mA -100mA 2SB1658 PDF

    d1063

    Abstract: 2sb1658 C10535E C10943X MEI-1202
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    secos gmbh

    Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
    Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers


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    SGSR809-A SC-59 SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649 PDF

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


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    PDF

    secos gmbh

    Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
    Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3


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    SC-59 SGSR809-A SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA PDF

    THINKI transistor catalog

    Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
    Text: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003


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    2SA914 O-126 2SA900 2SC2556 2SC2556A LM317K O-220 LM317T THINKI transistor catalog audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747 PDF