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    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0710 (2SB710), 2SB0710A (2SB710A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A) Unit: mm 0.40+0.10 –0.05 • Features


    Original     		PDF 2002/95/EC) 2SB0710 2SB710) 2SB0710A 2SB710A) 2SD0602 2SD602) 2SD0602A 2SD602A) 2SB0710

    2SB710A

    Abstract: 2SB0710 2SB0710A 2SB710 2SD0602 2SD0602A 2SD602 2SD602A
    Text: Transistor 2SB0710, 2SB0710A 2SB710, 2SB710A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD0602 (2SD602) and 2SD0602A (2SD602A) Unit: mm 0.40+0.10 ñ0.05 • Absolute Maximum Ratings Parameter 0.4±0.2 2 1 (0.95) (0.95)


    Original     		PDF 2SB0710, 2SB0710A 2SB710, 2SB710A) 2SD0602 2SD602) 2SD0602A 2SD602A) 2SB0710 2SB710A 2SB0710 2SB0710A 2SB710 2SD0602 2SD0602A 2SD602 2SD602A

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SB0710 2SB710 , 2SB0710A (2SB710A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A) Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2SB0710A Collector-emitter voltage 2SB0710


    Original     		PDF 2SB0710 2SB710) 2SB0710A 2SB710A) 2SD0602 2SD602) 2SD0602A 2SD602A) 2SB0710 2SB0710A

    2SD602

    Abstract: No abstract text available
    Text: Transistor 2SD0602, 2SD0602A 2SD602, 2SD602A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0710 (2SB710) and 2SB0710A (2SB710A) Unit: mm • Features 0.40+0.10 ñ0.05 0.16+0.10 -0.06 M Di ain sc te on na tin nc ue e/ d Symbol


    Original     		PDF 2SD0602, 2SD0602A 2SD602, 2SD602A) 2SB0710 2SB710) 2SB0710A 2SB710A) 2SD0602 2SD0602A 2SD602

    WR1 marking code

    Abstract: transistor marking wr1 sot-23 2SD602 2SD602A WR1 SOT23 transistor marking wr1 2SB710 2SB710A marking code WR1
    Text: 2SD602, 602A NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z z SOT-23 3 Collector For general amplification Complementary to 2SB710 and 2SB710A Low collector to emitter saturation voltage VCE sat


    Original     		PDF 2SD602, OT-23 2SB710 2SB710A 2SD602: 2SD602A: 300mA, 200MHz 01-June-2005 2SD602 WR1 marking code transistor marking wr1 sot-23 2SD602 2SD602A WR1 SOT23 transistor marking wr1 2SB710A marking code WR1

    2SB710

    Abstract: marking CQ
    Text: Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SB710 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 insertion through the tape packing and the magazine packing. 0.55 Mini type package, allowing downsizing of the equipment and automatic


    Original     		PDF 2SB710 OT-23 2SB710 marking CQ

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB710 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 insertion through the tape packing and the magazine packing. 0.55 Mini type package, allowing downsizing of the equipment and automatic +0.1 1.3-0.1 +0.1 2.4-0.1 Large collector current IC.


    Original     		PDF 2SB710 OT-23

    2SB710

    Abstract: XN04402 XN4402 2SB0710
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04402 (XN4402) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half


    Original     		PDF 2002/95/EC) XN04402 XN4402) 2SB710 XN04402 XN4402 2SB0710

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04402 (XN4402) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half


    Original     		PDF 2002/95/EC) XN04402 XN4402) 2SB0710 2SB710)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04402 (XN4402) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 di p Pl lan nclu ea e se pla m d m des


    Original     		PDF 2002/95/EC) XN04402 XN4402)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04482 (XN4482) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.50+0.10 –0.05 Parameter Tr2 Overall 1.1+0.2 –0.1 Symbol Rating


    Original     		PDF 2002/95/EC) XN04482 XN4482) 2SB0709A 2SB709A) 2SB0710 2SB710)

    2SB701

    Abstract: 2SB773A 2SB773 2SB758A 2SD1033 2SB722 2SB714 2SB756 2SB737 2SB758
    Text: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic (V) (V) Pc (mA) (mW) Electrical characteristics (Ta=25ºC) DC Current Gain fab/ft* Cob hFE VCE Ic (ºC) (MHz) (pF) (V) (mA) Tj 120W 150 (Tc=25ºC) 125W 150 (Tc=25ºC) 125W 150 (Tc=25ºC) 40W 150


    Original     		PDF 2SB701 2SB702 2SB702A 2SB703 2SB703A 2SB705 2SD1033 2SD882 2SD889 2SD895 2SB701 2SB773A 2SB773 2SB758A 2SD1033 2SB722 2SB714 2SB756 2SB737 2SB758

    2SD2458

    Abstract: 2SD2436 2SD2434 2SB1600 2SB642 2SB1627 2SD2433 2SD1010 2sB774 transistor HOA1404-2
    Text: • Silicon Small Signal Transistors Package No. S9TST0D Applica­ tion Functions SS Mini Type (D1) f 2SB1462 I 2 SD 22 I 6 S Mini Type (D5) Mini Type (D10) ( 2SB709A I 2 SDI 8 I 9A I 2SD601A (2SB1219/A í 2SB710/A I 2SD1820/A I 2SD602/A 1 2SB1218A T Mini Type New S Type


    OCR Scan     		PDF O-92NL 2SB1462 2SD2216 2SB1218A I2SD1819A 2SB709A 2SD601A 2SB1627 I2SD2496 2SA1309A 2SD2458 2SD2436 2SD2434 2SB1600 2SB642 2SD2433 2SD1010 2sB774 transistor HOA1404-2

    2SD602

    Abstract: 2SB710A SD602A 2SB710 2SD602A K150 SC-59A ice5 2SB710 S 2SB710 R
    Text: 2SB710, 2SB710A 2 S B 7 1 0 , 2 S B 7 1 0 A \/~ ? is — j - ] f 2 / S i PNP Epitaxial Planar v ij zi y PN P x fcf£ - S t e f f i / G e n e r a l A m p lifie r 2SD 602, 2 S D 6 0 2 A £ 13 > ~ f x) > U / C o m p le m e n ta r y P a i r w ith 2SD 602, 2 S D 602A


    OCR Scan     		PDF 2SB710, 2SB710A, 2SB710A 2SB710 2SB710A Ie--50 2SD602 SD602A 2SD602A K150 SC-59A ice5 2SB710 S 2SB710 R

    2SA1115

    Abstract: 2SA1115 E DTA124EK RT1P141C 2SA1175 2sa564 2SA1309A DTA124ES 2SA1015 2SA1018
    Text: - 28 - a S € Type No. « Manuf. = 2SA 1317 ' 2SA 1318 - ft 2SA 1319 „ m * SANYO TOSHIBA NEC iK/nruß 2SAU75 2SA1015 2SA953 tL HITACHI 2SA1032 ü it iM FUJITSU tö T MATSUSHITA = m MITSUBISHI 2SA1309A 2SA1115 □ — A ROHM 2SA933S 2SA933 2SA1309A 2SA965


    OCR Scan     		PDF 2SAU75 2SA953 2SA1032 2SA1309A 2SA1018 2SA879 2SA1115 2SA933S 2SA933 2SA1115 2SA1115 E DTA124EK RT1P141C 2SA1175 2sa564 DTA124ES 2SA1015

    2SA933S

    Abstract: 2SB737 2SA1302 TOSHIBA 2sb1425 2SA1286H 2SA644 2SB873 2SA1782 2SA1757 2sa1175
    Text: 27 - 55 € Type No. tt € Manuf. B SANYO TOSHIBA 2SA 1285 - H # 2SA1208 2SA1145 2SA 1285A H « 2SA1208 2SA1020 2 S A 1286 , H 2 S A 1287 J 2SA1770 * 2 S A 1288 2SA 1289 , 2 S A 1290 ✓ & T MATSUSHITA — A ROHM 2SA1124 2SA1282 2SA1124 2SB1212 2SB1068 2SB819


    OCR Scan     		PDF 2SA1285 2SA1285A 2SA1286 2SA1287J 2SA1288 2SA1289 2SA1208 2SA1770 2SA1145 2SA933S 2SB737 2SA1302 TOSHIBA 2sb1425 2SA1286H 2SA644 2SB873 2SA1782 2SA1757 2sa1175

    2SB737

    Abstract: 2SB694H 2SB709 2SB718 2SB747 2sb707 2SD601 2SD756 2SD756A 2SB698
    Text: - 58 - n Ta=25*C,*EP(iTc=25t5 2SB694H B Ä L F PA/PStf VcBO VcEO (V) (V) Ice D C) (A) Pe Pe* (W) m ^ fó 4# te (Ta=25°C) (max) ( u Pí) VcB (V) (min) (max) Vc e (V) Ic /I e (A) -0.05 LF PA/LS PSW -0.5 -1.5 LF PA/LS PSW -0.5 -1.5 -0.5 2SB703A LF PA/LS PSW


    OCR Scan     		PDF 2SB694H 2SB698 2SB703 2SB703A 2SB707 2SB708 2SD780A SC-59) 2SB736A 150mV 2SB737 2SB709 2SB718 2SB747 2SD601 2SD756 2SD756A

    761b nec

    Abstract: 2SB1010 2sb1041 761a 2sa684 nec 2SB737 2SB927 2SA684 2SB686 761-B
    Text: 51 - m % * Type No. 2SB 733 2SB 734 „ « Manuf. = £ SANYO M. 32 TOSHIBA m NEC ÍL HITACHI B M 2SB927 2SB739 1 2SA1705 2SB740 « ± a FUJITSU te T MATSUSHITA h m MITSUBISHI □ — A ROHM 2SB101Q 2SA684 2SB1035 2SB1041 2SB 736 m 2SA1338 2SB 736A H 2SA1338


    OCR Scan     		PDF 2SB927 2SB739 2SB1010 2SA1705 2SB740 2SA684 2SB1035 2SB1041 2SA133S 2SA1313 761b nec 2SB1010 2sb1041 761a 2sa684 nec 2SB737 2SB927 2SB686 761-B

    2SD2436

    Abstract: 2SD2433 2SD2434 2S897 2SD1995 2SC3312 2sb1446 2SD2458 2SD2529 D49 transistor
    Text: This I Silicon Small Signal Transistors _o UJ ru □a Copyrighted Ln >General-use Low Frequency Amplifiers and Others Package No. Applica­ tion Functions nj S S Mini Type (D1) ! 2SB1462 I2SD2216 □ □ b-1 S Mini Type (D5) ( 2SB1218A I 2S D I8I 9A Mini Type


    OCR Scan     		PDF O-92NL 2SB1462 I2SD2216 f2SB1218A I2SD1819A 2SB709A 12SD601A f2SB1627 I2SD2496 C2SA1309A 2SD2436 2SD2433 2SD2434 2S897 2SD1995 2SC3312 2sb1446 2SD2458 2SD2529 D49 transistor

    2SB694

    Abstract: Toshiba 2SB754 2Sb754 2SB927 2SA1225 2SA1243 2SA1241 2SB837B 2SA13 2SB1435
    Text: 54 - « m Type No. 2SB 8.27 „ 2SB 828 2SB 830 2SB 831 2SB 833 2SS 834 «2SB 835 tt € Manuf. h n =. n B Ä B 4 S 2 * 2 T 2SB 836 2SB 837 , 2SB 837L B B B 4 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 837S 838 839 840 . 841 , 841L 841S 842 843 B B tL 2SB 2SB 2SB


    OCR Scan     		PDF 2SB754 2SA1185 2SB849 2SB1155 2SA1789 2SB927 2SB1010 2SB815 2SA1298 2SB624 2SB694 Toshiba 2SB754 2Sb754 2SB927 2SA1225 2SA1243 2SA1241 2SB837B 2SA13 2SB1435

    2SA1146

    Abstract: 2SB1200 2SB764 2SB793 2SB605 2SB507 2SB744 NEC 2SA874 2SB1185 2SB1576
    Text: - Si % Type No. tt € Manuf. = m SANYO ill TOSHIBA 2 SB 1043 □— A 2SB764 2SB 1044 □— A 2SA1705 2SB 1045 U 2SA1415 2SA1200 2SB 1046 B ±L 2SA1415 2SA1384 2SB 1047 ±L 2SA1415 2SB1200 2SB 1048 i 2SB1126 T 2SA1783 T 2SA1702 2SB 1051 □— A 2SA1338


    OCR Scan     		PDF 2SB764 2SA1Q20 2SB605 2SA683 2SA1705 2SB793 2SA1415 2SA1200 2SA1173 2SA1146 2SB1200 2SB793 2SB605 2SB507 2SB744 NEC 2SA874 2SB1185 2SB1576

    2SA1301 TOSHIBA

    Abstract: da 1191 2sa970 Toshiba 2SB754 2SA904A 2SA1038 2Sa1173 2SA1323 2SB646 2SA1782
    Text: - 24 Si - tt « € Manuf- B S 5 a a h h = SANYO » 2SA1115 * TOSHIBA $ m b NEC ÍL HITACHI 1onn 2SA1782 2SA1048 2SA1782 2SA1048CL 3t 3? X 3Ë K «£ « T -y-viry 0 3Ï 0 ÍL B ÍL 0 ÍL 2SA1249 2SA1162 2SA1337 2SA1220A 2SA812 ZSB631K 2SB827 2SB817 2SA1207


    OCR Scan     		PDF 2SA1415 2SA1782 2SA1048 2SA1127 SA1299 2SA933S 2SA104S 2SA1337 SA112 2SA1301 TOSHIBA da 1191 2sa970 Toshiba 2SB754 2SA904A 2SA1038 2Sa1173 2SA1323 2SB646

    SS2205

    Abstract: 2SA1628 2SB814 HSI 527 2SA1284 2SA1178 2SA1283 2SA1586 2SB1043 2SA934
    Text: 33 tt « Manuf. ft 3 SANYO M TOSHIBA m « T y p e No. o a ED - ±L HITACHI S ± FUJITSU 35 ta T DTA123YS 1505 n m w * 2SA 1506 m w m ,^ 2SA 1 507 , 2SA 1508 2SA 1509 2SA 1510 ' 2SA 1511 /• = ft 2SA 1512 & T 2SA 1 5 1 3 -■ a 2SA 1514 □ - A 2SA1257 2S A 1 1 6 3


    OCR Scan     		PDF SS2205 UN411H RT1P234S DTA123YS 2SA1781 2SA1162 2SB736 2SB709A 2SA1235 2SA1753 SS2205 2SA1628 2SB814 HSI 527 2SA1284 2SA1178 2SA1283 2SA1586 2SB1043 2SA934

    2SD636 R

    Abstract: 2SD636 2SB615 2SD650H 2SB613 2SD511 2SD646 2SD637 2SB631 2SD601
    Text: - 220 - Ta=25tC, *EP(àîc=25tC M & 2SD526 t± & ÄS 2SD545 m V'cEO Ic(D C ) Pc Pc* (V) (V) (A) (W) (W) 80 80 4 LF PA 25 25 1 220 180 15 70 50 7 Ä 2 PA/PSW/DDC/Reg 2SD553 Ä S PSW/PA m VCBO PA 2SD552 2SD560 m ICEO (max) (/¿A) 30 0. 6 n k 4$ 14 hF E Vc b


    OCR Scan     		PDF 2SD526 2SD545 2SD552 2SD553 2SD560 2SD568 2SD569 2SD571 2SB639H 2SD629H 2SD636 R 2SD636 2SB615 2SD650H 2SB613 2SD511 2SD646 2SD637 2SB631 2SD601