Untitled
Abstract: No abstract text available
Text: J.Elieu ^s.mi-L-onaactoi I/ loaucti, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2SB757 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package •High collector current •Wide area of safe operation
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2SB757
2SD847
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2SB757
Abstract: 2SD847 SC-65
Text: 2SB757 FUJI POWER TRANSISTOR EPITAXIAL PLANER TYPE HIGH CURRENT, HIGH SPEED SWITCHING Outline Drawings TO-3P Features Excellent linearity in hFE High collector current Excellent safe operating area High reliability 1 : Base 2 : Collector 3 : Emitter Applications
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2SB757
2SD847)
SC-65
2SB757
2SD847
SC-65
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2SB75
Abstract: 2SB757 2SD847 SC-65
Text: 2SB757 FUJI POWER TRANSISTOR EPITAXIAL PLANER TYPE HIGH CURRENT, HIGH SPEED SWITCHING Outline Drawings TO-3P Features Excellent linearity in hFE High collector current Excellent safe operating area High reliability 1 : Base 2 : Collector 3 : Emitter Applications
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2SB757
2SD847)
2SB75
2SB757
2SD847
SC-65
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2SB75
Abstract: 2sd847 2SB757 npn general purpose high voltage amplifier
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD847 DESCRIPTION •Good Linearity of hFE ·High Collector Current ·Wide Area of Safe Operation ·High Reliability ·Complement to Type 2SB757 APPLICATIONS ·Audio amplifier applications
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2SD847
2SB757
2SB75
2sd847
2SB757
npn general purpose high voltage amplifier
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2sd847
Abstract: 2SB757
Text: SavantIC Semiconductor Product Specification 2SD847 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High collector current ·Wide area of safe operation ·Complement to type 2SB757 APPLICATIONS ·Audio amplifications ·Serie regulators ·General purpose power amplifiers
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2SD847
2SB757
2sd847
2SB757
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2SB757
Abstract: 2SD847
Text: JMnic Product Specification 2SB757 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・High collector current ・Wide area of safe operation ・Complement to type 2SD847 APPLICATIONS ・Audio amplifications ・Serie regulators ・General purpose power amplifiers
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2SB757
2SD847
-10mA;
2SB757
2SD847
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2SB757
Abstract: 2SD847
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB757 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -40V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SD847
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2SB757
2SD847
Dissi40
2SB757
2SD847
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2SB757
Abstract: 2SD847
Text: SavantIC Semiconductor Product Specification 2SB757 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·High collector current ·Wide area of safe operation ·Complement to type 2SD847 APPLICATIONS ·Audio amplifications ·Serie regulators ·General purpose power amplifiers
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2SB757
2SD847
2SB757
2SD847
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2SB757
Abstract: 2SB75 2SD847
Text: Inchange Semiconductor Product Specification 2SB757 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・High collector current ・Wide area of safe operation ・Complement to type 2SD847 APPLICATIONS ・Audio amplifications ・Serie regulators
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2SB757
2SD847
2SB757
2SB75
2SD847
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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KT819B
Abstract: KT818A BD347 MJE1660 2SB629 BD191 1561-0403 BDT52 KT818B 2sb757
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type "c Max fT t0N Max hFE 'CBO r V BR CEO Max Max (A) Of) ON) Min (Hz) (A) (s) Max (Ohms) PD (CE)eat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15
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MJE1290
MJE1660
SDT9801
KT818A
KT819A
2SB757-09
KT819B
BD347
2SB629
BD191
1561-0403
BDT52
KT818B
2sb757
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2SB757
Abstract: 2SB 731 2SD847 SC-65 T151 T760 T810 T930 PW20A 2SB75
Text: 2SB757 P N P J H £ ? 4 r > 7 U 7 l'- i- B E P I T A X I A L P L A N E R T Y P E _ * « , « * < H IG H C U R R E N T . * * > * * H IG H S P E E D S W I T C H I N G I W f é ’+ Â I O u tlin e D r a w in g s 4 .5 ° 2.0 *0J Features
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2SB757
2SD847fca
2SD847)
ESTe30S3
l95t/R89
2SB757
2SB 731
2SD847
SC-65
T151
T760
T810
T930
PW20A
2SB75
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2SD889
Abstract: 2SB772 KT 185 2SB754 2SB793 2SB751A 2sb764 2sb774 2SB753 2SB757
Text: - 60 - m n. Ta=25íC, *EP(3Tc=25‘ C SS £ m S ii V’ CBO V’ ceo (V) (V) Ici DC) (A) 2SB751A PA/SW -80 -80 -4 2SB753 PSW/PA -100 -80 -7 2SB754 PSW/PA -50 -50 -7 2SB757 HS PSW/PA/Audio/Reg -40 -40 LF PA -60 LF PA LF PA LF PA 2SB761 2SB76ÎA 2SB762 2SB762A
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2SB751A
2SB753
2SB754
2SB757
2SB761
2SB761A
2SB762
2SD968
SC-62
2SB789
2SD889
2SB772
KT 185
2SB754
2SB793
2sb764
2sb774
2SB753
2SB757
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Untitled
Abstract: No abstract text available
Text: 2SB757 P N P l f c * ? + '> '7 JU7 l EPITA XIAL PLANER TYPE *««, HIGH CU R R EN T. HIGH SPEED SWITCHING IW fé’+âs I Outline Drawings 4 5 *° 2.0 *0J Features • hFE<7 ,J—7 ,j T ' f A * £ i ' • ft Excellent linearity in hFE High collector current
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2SB757
SC-65
17Vfc*
5S35S-
19S24^
I95t/R89)
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6DI15S-050
Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140
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1D500A-030
1DI200E-055
1DI200K-055
1DI200M-120
1DI200MA-050
1DI200Z-100
1DI200Z-120
1DI200ZN-120
1DI200ZP-120
1DI300M-050
6DI15S-050
1MB1400N-120
6D130Z-120
ENC471
2sk2850
2sk2761
ESJA58-06A
1MBH-60D
1mbh60d-090a
6DI15S050
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ET-191
Abstract: No abstract text available
Text: TRANSISTORS IC AM PS Max. 3 5 IC AM PS Max. VceoV Pc su s W 800 Pc W 80 Device Type NPN 2SC3550 400 60 180 80 2SD921 800 40 Device Type NPN 2SC2929 2SC3549 800 80 2SC3551 50 25 2SD1157 1000* 80 ET383 200 25 2SD834 250 60 2SD1073 100 80 ET393 -80 30 2SB862*
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2SD921
2SC2929
2SC3549
2SC3551
2SD1157
2SC3550
ET383
2SD834
2SD1073
ET393
ET-191
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et1275
Abstract: M101 2SC3551 equivalent
Text: B IP O LA R T R A N S IS T O R S R atings and Specifications COLLMER Q3 SEMICONDUCTOR INC M6E D • 22307^2 0D01b03 13 1 « C O L Buffer drive tra n sisto rs • B e st su ite d fo r d riv in g t r a n sis to r m o d u le s. • A ll t e r m in a ls are in su la te d fro m m o u n t in g plate.
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0D01b03
1SI50A-050
2SC3047
T0-220AB
2SC3549
2SC3551
1SI10A-100
2SD847
2SD1157
et1275
M101
2SC3551 equivalent
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2SC15-0
Abstract: 2SB753 2SB754 2SB757 2SB764 2SD837 ep 130
Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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2SB764
2SC15-0
2SB753
2SB754
2SB757
2SD837
ep 130
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2sc4977
Abstract: transistor 2SC4977 25c2625 2SC2625 2SC2047 2SC4977 transistor ET-191 2SC4795 2SC3320 ET391
Text: FUJI <S SWITCHING TRANSISTORS B| TO-220AB T O -3 P • t ' 5 /% ■m * 1 * 1 T O -3 P F BBS 1C AMPS Max. 3 80 Device Type NPN 2SC3550 180 80 2SD921 800 80 2SC3551 1000* 80 ET383 V ceoV sus 800 5 Pc W IC AMPS Max. 400 60 Device Type NPN 2SC2929 800 40 2SC3549
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2SC3550
2SD921
2SC3551
ET383
2SC3505
2SC4419
2SC2656
2SC3030
ET190
2SD923
2sc4977
transistor 2SC4977
25c2625
2SC2625
2SC2047
2SC4977 transistor
ET-191
2SC4795
2SC3320
ET391
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2sb757
Abstract: 2SC3551
Text: « /\°7 —x / W X / Power Devices • / S '7 -h 7 i- iS / K f l'7 Power Transistor (Molded types) r a iÎŒ i li M T .'f y 3 - > ? b ~ 7 > v High voltage high speed switching transisitors V it e Voits tc Cent. Amps. Pc : fere (Mié.) Watts to Amps. VCE
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2SC3549
2SC3550
2SC3551
2SC3505
2SC4419
2SC3030
O-22QAB
1D500A-030
ETN35-030
ETM36-030
2sb757
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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2SD818
Abstract: 2SD844 fst 240 2sb764 2SD859 2SD811 2SD812 2SD813 2SD814 2SD814A
Text: - 226 - T a = 2 5 eC . * E P ( ä T c = 2 5 ‘ C »CBO m Ic(DC) Pc Pc* (A) (W) (W) (V) tt (UA) (T a = 2 5 t : ) U/tr V/Nr" »CB (V) M lldA/ (V) m hp fmay^ (A ) 1" (V) [* E P (S typ ffi] '(V)' '(V)' Ic (A) 0.5 6 50 1000 900 10 40 5 PA 80 80 5 40 50 80 40
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2SD811
2SD812
2SD813
2SD814
2SD814A
2SD818
2SD819
2SD841
zmw42
2SB753
2SD818
2SD844
fst 240
2sb764
2SD859
2SD813
2SD814
2SD814A
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2SB757
Abstract: 2SD847 SC-65
Text: 2SD847 t ± NP NHf i i f i i j f y U— - '< r7 - b ÿ > it Z ÿ TRI PLE D IFFU SED PLA N ER T YPE HIGH P O W ER DARLINGTON HIGH S P E E D SW IT C H IN G • : Outline Drawings : Features • hFt<7 i)—7 i) ,T ' tif & \.' • Excellent linearity hFE
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2SD847
2SB757t3>
2SB757)
SC-65
2SB757
2SD847
SC-65
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2sb504
Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
Text: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St
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S029747
SS963&
2sb504
2t306
2N5983
2SD588
2sd73
2sc497
HD6801V
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