2SB81 Search Results

2sd1047 equivalent

Abstract: 2SB817 2SD1047 2SB817 2SD1047
Contextual Info: Inchange Semiconductor Product Specification 2SB817 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SD1047 APPLICATIONS ・140V/12A AF 60W output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

2SD1051

Abstract: 2SB819
Contextual Info: Transistor 2SD1051 Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB819 Unit: mm 6.9±0.1 1.5 1.0 0.85 4.5±0.1 4.1±0.2 0. 7 2.4±0.2 2.0±0.2 3.5±0.1 ● High collector to emitter voltage VCEO. Large collector power dissipation PC.

2SB816

Abstract: 2SD1046
Contextual Info: SavantIC Semiconductor Product Specification 2SB816 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SD1046 ·Wide area of safe operation APPLICATIONS ·For LF Power Amplifier, 50W Output Large Power Switching Applications

2SD1046

Abstract: 2SB816 50w LF amplifier
Contextual Info: SavantIC Semiconductor Product Specification 2SD1046 Silicon NPN Power Transistors • DESCRIPTION ·With TO-3PN package ·Complement to type 2SB816 ·Wide area of safe operation APPLICATIONS ·For LF power amplifier, 50W output large power switching applications

2SB817

Abstract: 2SD1047 2SB817 2SD1047 2sd1047 equivalent 2SD1047F 4017 12AAF
Contextual Info: Ordering number:ENN680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Applications Package Dimensions unit:mm 2022A [2SB817/2SD1047] 15.6 14.0 3.2 3.5 4.8 2.0 1.2 15.0 20.0 • Capable of being mounted easily because of onepoint fixing type plastic molded package Interchangeable with TO-3 .

2SB812

Abstract: 2SD1032
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB812 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·High Power Dissipation ·Complement to Type 2SD1032 APPLICATIONS ·Designed for AF power amplifier applications

Contextual Info: Ordering number : EN694G 2SB815/2SD1048 Bipolar Transistor http://onsemi.com – 15V, (–)0.7A, Low VCE(sat), (PNP)NPN Single CP Features • • Ultrasmall package allows miniaturization in end products Large current capacity (IC=0.7A) and low-saturation voltage

2SB816

Abstract: 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416
Contextual Info: 59 - fi 2SB 980 2SB 2SB 2SB 2SB 2S8 2SB 981 982 983 , 984 _ • 985 986 , 2S8 987 2SB 988 « Manuf. T K T tfi T fö T S tB t u q n 989 991 992 993 994 995 996 2SB 2SB 2SB 2SB 2SB 997 ^ 998 999 1000 1000A H 3 SANYO 9ÇR77C; 2SB775 2SB816 2SB825 2SB816 * 2SA17Q3

Contextual Info: Transistors 2SB0819 2SB819 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 4.1±0.2 2.0±0.2 2.4±0.2 (0.85) 0.45±0.05 Parameter Symbol Rating Unit VCBO −50 V Collector-emitter voltage (Base open)

2sd1051

Abstract: 2SB0819 2SB819
Contextual Info: Transistors 2SB0819 2SB819 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 2.5±0.1 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current

2SB815

Abstract: 2SD200 2SD100 2SD1048 D109 ITR08396 ITR08397 ITR08398 ITR08399 2SB815-6
Contextual Info: 注文コード No. N 6 9 4 F 2SB815 / 2SD1048 No. N694F 41301 半導体ニューズ No.N694E とさしかえてください。 2SB815 / 2SD1048 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ 低周波一般増幅用 ・超小型パッケージのためセットの小型化 , 薄型化が可能である。

2sd1051

Abstract: 2SB0819 2SB819 japanese transistor manual
Contextual Info: Transistor 2SB0819 2SB819 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 2.5±0.1 (1.0) R 0.7 4.5±0.1 R 0.9 4.1±0.2 ● High collector to emitter voltage VCEO. Large collector power dissipation PC.

2sd1051

Abstract: 2SB0819 2SB819
Contextual Info: Transistors 2SD1051 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0819 2SB819 Unit: mm 2.5±0.1 (1.0) 4.1±0.2 2.0±0.2 R 0.7 4.5±0.1 R 0.9 2.4±0.2 • High collector-emitter voltage (Base open) VCEO • Low collector power dissipation PC

2SD1305

Abstract: ic MARKING FZ 2SB814 2SC3169 2SC3171 2SD1390 2SD1391
Contextual Info: PANASONIC I N D L / E L E K - C S E f l l } 72C D | 1^32554 D D D ^Il T T-i<? - i S 2SB814 ^yvT ssi 2SB814 '> ij zi y P N P PN P Epitaxial Planar Voltage, Low-Noise Amplifier • ^ • ^¡[/Features 3 u 9 9 • • i 5 v 9 W ± V c E o ^ ifc v ^ / H ig h V ceo

SMD B7

Abstract: 2SB815 smd b6 B6 SMD sot23
Contextual Info: Transistors IC SMD Type PNP Epitaxial Planar Silicon Transistors 2SB815 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Large current capacity IC=0.7A and low-saturation voltage. 0.4 3 Ultrasmall package allows miniaturization in end products.

50w LF amplifier

Abstract: 2SB816 2SD1046
Contextual Info: Inchange Semiconductor Product Specification 2SB816 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SD1046 ・Wide area of safe operation APPLICATIONS ・For LF Power Amplifier, 50W Output Large Power Switching Applications

transistor 2sd1047

Abstract: 2SB817 2sd1047 605K transistor 1047 2SB817 2SD1047 2sb transistor transistor 2sb817 817 c w
Contextual Info: O rdering num ber: EN 680F 9 i 2SB817/2SD1047 N0.68OF 2SB817 : PNP Epitaxial P lanar Silicon Transistor 2SD1047 : NPN Triple Diffused Planar Silicon Transistor I 140V/12A, AF 60W Output Applications F e a tu re s • Capable of being mounted easily because of one-point fixing type plastic molded package

b816

Abstract: D1046 ic 710 2SB816 SD1046 SANYO ST power amp 50w
Contextual Info: Ordering number: EN 677D 2SB816/2SD1046 S ilico n PNP/NPN Planar Type Transistor For LF Power Amp, 50W O utput; Large Power S w itc h in g Features • Capable of being mounted easily because of one-point fixing type plastic molded package Interchangeable with TO-3

2SB815

Abstract: ic cd 4017 2SD1048 694E
Contextual Info: Ordering n u m b e r:EN 6 9 4 E 2SB815/2SD1048 No. 694E Silicon PNP/£iPN Epitaxial Planar Transistors SAÊlYO i For General-Purpose AF Amplifier Features V ery small package enabling compactness and slimness o f sets • Large current capacity ( l c = 0 .7 A ) and low saturation voltage

2SB817

Abstract: 2SD1047 2s8817 transistor 2sd1047 transistor 2sb817
Contextual Info: Æ&m o s p e c PNP SILICON POWER TRANSISTORS PNP 2SB817 2SB817 transistor is designed for use in general purpose power amplifier,application FEATURES: * Collector-Emitter Voltage V CE0= 140V Min * DC Current Gain hFE= 60-200@ lc= 1.0A * Complement to 2SD1047

2SD1047

Abstract: 2sd1047 equivalent 2SB817 2SD1047 2SB817
Contextual Info: SavantIC Semiconductor Product Specification 2SD1047 Silicon NPN Power Transistors DESCRIPTION •Complement to type 2SB817 ·With TO-3PN package APPLICATIONS ·Power amplification ·Low frequency and audio band PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

2SB812

Contextual Info: SavantIC Semiconductor Product Specification 2SB812 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Wide area of safe operation ·Low collector saturation voltage APPLICATIONS ·For audio frequency output applications PINNING PIN DESCRIPTION

2SB817

Abstract: 2SD1047 12AAF
Contextual Info: SavantIC Semiconductor Product Specification 2SB817 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SD1047 APPLICATIONS ·140V/12A AF 60W output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

2SA1301 TOSHIBA

Abstract: da 1191 2sa970 Toshiba 2SB754 2SA904A 2SA1038 2Sa1173 2SA1323 2SB646 2SA1782
Contextual Info: - 24 Si - tt « € Manuf- B S 5 a a h h = SANYO » 2SA1115 * TOSHIBA $ m b NEC ÍL HITACHI 1onn 2SA1782 2SA1048 2SA1782 2SA1048CL 3t 3? X 3Ë K «£ « T -y-viry 0 3Ï 0 ÍL B ÍL 0 ÍL 2SA1249 2SA1162 2SA1337 2SA1220A 2SA812 ZSB631K 2SB827 2SB817 2SA1207