2SB856 Search Results

Contextual Info: 2SB856 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline T O -2 2 0 A B 1. B a s e 2 . C o lle c to r 1 F la n g e 2 3 Absolute Maximum Ratings (Ta = 3 . E m itte r 25°C) Item Symbol Rating Collector to base voltage

2SA1015

Abstract: 2SA1358 2SA965 2SB1212 2SB560 sa1015 2SA934 2SA985 NEC 2SA1096 2SA385
Contextual Info: - 6 - m % « tt T y p e No. Manuf. = í¥ SANYO TOSHIBA m NEC B ÎL HITACHI * 2SA 479 m S * * ac s * 2S A 480 y.- - * 2S A 482 * * 2 S A 4 8 3 *-' 2SB596 2SA985 2SB507 2SB596 2SA985 2SB856 2SA836 2SA 4 ? 3 ^ ' * 2SA 474 ^ * 2SA 475 * 2 S A 4 7 7 ír. * 2SA 478 ^

2SB415

Abstract: sanyo 2sb509 NEC B 536 2sb631 hitachi 2SA1284 2sa966 2SB631 2SB557 TOSHIBA 2SA934 2SB661
Contextual Info: - 46 - S € Type No. tt V - - 2SB 521 „ 2SB 522 a € Maniif. , SANYO T O SHIBA a NEC a b HITACHI * ± a F U J ITSU fâ T MATSUSHITA □ MITSUBISHI — A ROHM 2SB507 2SB596 2SB856 2SB1291 2SB508 2SB596 LB 2SB856 2SB1291 2SA1069 2 SB 523 , = S 2SB632 2SB596

2SB856

Abstract: transistor pnp VCEO 12V Ic 1A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB856 DESCRIPTION •Collector Current: IC= -3A ·Low Collector Saturation Voltage : VCE sat = -1.2V(Max)@IC= -2A ·High Collector Power Dissipation APPLICATIONS ·Designed for low frequency power amplifier applications.

2SB856

Contextual Info: SavantIC Semiconductor Product Specification 2SB856 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Low collector saturation voltage APPLICATIONS ·Low frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2SA934

Abstract: 2SA970 2sa1015 2SA953 2sa933 2sa952 2sB1064 2SA1782 2SA720 2SA836
Contextual Info: tt € S> T y p e No. Manuf. « H $ SANYO M £ TOSHIBA B 11 NEC S ÍL HITACHI * ± a FU JITSU të T MATSUSHITA □ MITSUBISHI — A ROHM 2SA 671 — '' ÍL 2SB507 2SB596 2SA985 2SB856 2SB941 2SB1033 2 SA 672 B SL 2SA1782 2SA1015 2SA953 2SA836 2SA720 2SAS54

2SB856

Contextual Info: HITACHI 2SB856-SILICON PNP T RIPLE DIFFUSED LOW FREQ UEN C Y PO W ER AM PLIFIER 1. Caw 2. Collector flange Ì. Emillcr (Uíniínsiorts iii immj (JE D E C TO-220AB) ABSO LU T E MAXIMUM RATINGS (Ta=25°C) Item MAXIMUM COLLECTOR DISSIPATION CURVE 2SB856

2sb856

Contextual Info: 2SB856 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline T0-220AB 1. Base 2. Collector Flange 3. Emitter Absolute Maximum Ratings ( T a = 25°C) Item Symbol C ollector to base voltage vCBQ C ollector to em itter voltage

Contextual Info: 2SB856 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline TO -220AB 1. Base 2. Collector Flange 3. Em itter Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Rating Unit C o lle cto r to base vo lta g e ^G B O -5 0 V C o lle cto r to e m itte r vo lta g e

Hitachi DSA001650

Contextual Info: 2SB856 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220AB 1 2 3 1. Base 2. Collector Flange 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCBO –50 V Collector to emitter voltage

Contextual Info: 2SB856B Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

70H60

Contextual Info: i HITACHI ZO D odO SILICON PNP TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER ì lb* î. CV .i r .n » :ic f i » ílM ilj JEDEC TO-220AB I ABSOLUTE MAXIMUM RATINGS i.Ta=2500 Symbol i tiem MAXIMUM COLLECTOR DISSIPATION CURVE 2SB856 Unit C ollector io base voltage

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SA614

Abstract: 2N6107 2N6109 2N6111 2SA614R 2SA614Y 2SA748 2SA748P 2SA748Q 2SA748R
Contextual Info: TO-220 Power Package Transistors PNP Maximum Ratings Type No. V C BO ^CEO Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) PD (W) (V) Min @Tc=25°c ^EBO 'cBO ^FE @ Min Max 75 30 2.3 150 * 100 60 * 100 40 'ces (V) Min 2N6107 80 70 5 40 7

T1P42C

Abstract: T1P-42C 53a33 2sb85 T1P42A T1P32B T1P32A
Contextual Info: POWER PACKAGE TRANSISTORS PNP M axim um R atin gs E lectrical C h aracte ristics VCE0 v EBO PD 'CBO « v CB (V) (V) (W) (V) Un Mn Mn a Tc=25°C MJE350T 300 300 3 21 100 300 30 240 0.05 10 2SA940 150 150 5 25 10 120 40 140 0.50 10 1.5 BD240C 115 100 5 30

B857

Abstract: a968 TRANSISTORS B857 B-857 A940 b857 to-220 2sb85 A-968
Contextual Info: TO-220 Power Package Transistors PNP Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Maximum Ratings Type No. Pd (W) @Tc=25°c ^CBO V CEO V EBO (V) Min (V) Min (V) Min 2N6107 80 70 5 40 2N6109 60 50 5 40 'c (A) 'cBO ^CB ^CES V CE (HA) Max

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

2SB1099

Abstract: 2SB615 nec 2SB1099 2SB886 B676 1086a 1091 2S8834 2sb536 TOSHIBA 2SB613
Contextual Info: 62 - « tt m Type No. € Manuf. a SANYO NEC 2SB601 □—A 2SA1706 2SB 1077 a ti 2SB880 2SB676 2SB 1078 XL 2SB886 2SB673 2SB 1078K xz: 2SB 1080 a a 2SB 1085 □— a 2SB 1085A 2SB 1086 ^ & 2SB632K 2SA962A 2SA1011 2SA968 □— A 2SA1011 □— A 2SA1249 2SB 1Q86A

2SA985 NEC

Abstract: 2s8834 2SB56 2SB596 2SA985 toshiba 2sb555 2SB834 2SB508 2SB537 2SA836
Contextual Info: s € tt T y p e No. 2SB 153 2SB 154 2SB 155 2SB 176 " 2SB 302 2SB 370 2SB 370A 2 Sß 434 , □ SS a X 3: SAN YO ^ M TOSHIBA s t NE C il H IT ACHI ±L 2SB 561 ±L 31 2 SB 561 T 4 ii Ä S 2SB 435 ^ 2SB 444 0 a a iz 2SB 492 - = # 2SB 496 iL 2SB 502 Ä ä 2SB 443

LM8550

Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Contextual Info: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor