2SB931 Search Results

2SB931

Abstract: 2SD1254
Contextual Info: Power Transistors 2SB931 2SB931 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1254 • Features Unit I mm 8.7 ; • Low collector-emitter saturation voltage VcEisa« • Good linearity of DC current gain

Contextual Info: Product specification 2SB931 TO-252 6.50 +0.2 5.30-0.2 Features Unit: mm 2.30 +0.1 -0.1 +0.15 1.50 -0.15 +0.15 -0.15 +0.8 0.50-0.7 Low collector-emitter saturation voltage VCE sat . +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0931 (2SB931) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1254 Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 4.4±0.5 10.0±0.3 1.5±0.1 1.5+0 –0.4

2SB931

Abstract: 2SD1254
Contextual Info: Power Transistors 2SB931 Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 –130 V Collector to emitter voltage VCEO –80 V Emitter to base voltage VEBO –7 V Peak collector current ICP –6 A Collector current IC –3

2SB931

Abstract: 2SD1254 2SB0931
Contextual Info: Power Transistors 2SB0931 2SB931 Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 –130 V Collector to emitter voltage VCEO –80 V Emitter to base voltage VEBO –7 V Peak collector current ICP –6 A Collector current

2SB931

Contextual Info: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB931 TO-252 6.50 +0.2 5.30-0.2 Features Unit: mm 2.30 +0.1 -0.1 +0.15 1.50 -0.15 +0.15 -0.15 +0.8 0.50-0.7 Low collector-emitter saturation voltage VCE sat . +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15

2SB931

Abstract: 2SD1254
Contextual Info: P o w e r T ra n s is to rs 2SD1254 2S D 1254 Silicon NPN Epitaxial Planar Type • Package Dimensions Power Switching Complementary Pair with 2SB931 ■ Features • • • • Low collector-em itter saturation voltage V c e m Good linearity of DC current gain (I i f e )

2SB0931

Abstract: 2SB931 2SD1254
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0931 (2SB931) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1254 Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 1.5+0 –0.4 10.0±0.3 1.5±0.1 2 4.4±0.5

Contextual Info: Power Transistors 2SD1254 2SD1254 Silicon NPN Epitaxial Planar Type • Package Dimensions Power Switching Complementary Pair with 2SB931 ■ Features • Low collector-em itter saturation voltage • Good linearity of DC current gain V ce isa o (I i f e )

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0931 (2SB931) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1254 Unit: mm 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0931 (2SB931) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1254 Unit: mm 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol

2SB0931

Abstract: 2SB931 2SD1254
Contextual Info: Power Transistors 2SB0931 2SB931 Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1254 Unit: mm 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130

Contextual Info: Power Transistors 2SB931 2SB931 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1254 •Features Unit I mm 3.7 max 8.7 max. t*-* 1.1 max. 6.5 max. • Low co llector-em itter saturation voltage VcEisa« - t

Contextual Info: 2SB931P Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)130 I(C) Max. (A)3 Absolute Max. Power Diss. (W)1.3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)500m @I(C) (A) (Test Condition)2

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

PA8080

Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
Contextual Info: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)

K 2411

Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type

2SB0774

Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)

transistor a2160

Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

A1534

Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin

2SC4714

Abstract: 2SA1817 2SD1539 2SA1605 2SC2258 2SC2923 2SC3063 2SC3942 2SC3945 2SC4717
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions TO-126 (D 5 2 *, D53) U Type (D41) MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F