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    2SB936 Search Results

    2SB936 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB936 Kexin Silicon PNP Epitaxial Planar Type Original PDF
    2SB936 Panasonic Silicon PNP epitaxial planar type Original PDF
    2SB936 Panasonic PNP Transistor Original PDF
    2SB936 TY Semiconductor Silicon PNP Epitaxial Planar Type - TO-252 Original PDF
    2SB936 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB936 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB936 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB936 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB936 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB936 Unknown Cross Reference Datasheet Scan PDF
    2SB936 Panasonic Silicon PNP Epitaxial Planar Type Power Transistor Scan PDF
    2SB936 Panasonic Silicon Medium Power Transistors Scan PDF
    2SB936A Kexin Silicon PNP Epitaxial Planar Type Original PDF
    2SB936A Panasonic Silicon PNP epitaxial planar type Original PDF
    2SB936A) Panasonic PNP Transistor Original PDF
    2SB936A TY Semiconductor Silicon PNP Epitaxial Planar Type - TO-252 Original PDF
    2SB936A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB936A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB936A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB936A Unknown Cross Reference Datasheet Scan PDF

    2SB936 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB936A

    Abstract: No abstract text available
    Text: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB936A TO-252 Features 6.50 +0.2 5.30-0.2 Low collector-emitter saturation voltage VCE sat . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15


    Original     		PDF 2SB936A O-252 2SB936A

    2SB936

    Abstract: 2SB936A
    Text: Power Transistors 2SB936, 2SB936A Silicon PNP epitaxial planar type 3.4±0.3 8.5±0.2 Unit: mm 6.0±0.5 1.0±0.1 0.8±0.1 0.5max. 2.54±0.3 Absolute Maximum Ratings TC=25˚C 2SB936 –50 –20 VCEO emitter voltage 2SB936A –40 V VEBO –5 V Peak collector current


    Original     		PDF 2SB936, 2SB936A 2SB936 100mA 2SB936 2SB936A

    Untitled

    Abstract: No abstract text available
    Text: 2SB936Q Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)40 I(C) Max. (A)10 Absolute Max. Power Diss. (W)1.3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V)600m @I(C) (A) (Test Condition)10


    Original     		PDF 2SB936Q Freq100MÃ

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0936 (2SB936), 2SB0936A (2SB936A) Silicon PNP epitaxial planar type For low-voltage switching Unit: mm Unit −40 V 1 −50 −20 Collector-emitter voltage 2SB0936 (Base open)


    Original     		PDF 2002/95/EC) 2SB0936 2SB936) 2SB0936A 2SB936A) 2SB0936

    2SB0936

    Abstract: 2SB0936A 2SB936 2SB936A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0936 (2SB936), 2SB0936A (2SB936A) Silicon PNP epitaxial planar type For low-voltage switching Unit: mm 3.4±0.3 6.0±0.2 1.0±0.1 Rating Unit VCBO −40 V 1 −50 2SB0936A


    Original     		PDF 2002/95/EC) 2SB0936 2SB936) 2SB0936A 2SB936A) 2SB0936 2SB0936A 2SB936 2SB936A

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB936 Preliminary PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TYPE  DESCRIPTION The UTC 2SB936 is a silicon PNP epitaxial planar type, it uses UTC’s advanced technology to provide the customers with high DC


    Original     		PDF 2SB936 2SB936 2SB936L-TN3-T 2SB936G-TN3-T O-252 2SB936L-TN3-R 2SB936G-TN3-R QW-R209-029

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB936 TO-252 Features 6.50 +0.2 5.30-0.2 Low collector-emitter saturation voltage VCE sat . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1


    Original     		PDF 2SB936 O-252

    2SB0936A

    Abstract: 2SB936 2SB936A 2SB0936
    Text: Power Transistors 2SB0936, 2SB0936A 2SB936, 2SB936A Silicon PNP epitaxial planar type 3.4±0.3 8.5±0.2 Unit: mm 6.0±0.5 1.0±0.1 0.8±0.1 0.5max. 2.54±0.3 Absolute Maximum Ratings (TC=25˚C) 2SB0936 –20 VCEO emitter voltage 2SB0936A V –50 VEBO –5


    Original     		PDF 2SB0936, 2SB0936A 2SB936, 2SB936A) 2SB0936 2SB0936A 2SB936 2SB936A 2SB0936

    b0246

    Abstract: PH2955T 045H2 SMCP055 SGS-Ates B0246A B0-246 MJE2955T ST MJE2901K MJE2955K
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 SOT3805 SOT3825 SOT3825 SOT3825 SOT3105 SOT3115 SOT3125 ST29051 ~gH~g~ 35 40 SOT3807 SOT3827 SOT3827 SOT3827 2SB871A 2SB936A 2SB948A 2SB896A ~~~~~~~ 45 50 SK3183 BOW22 B0664 B0664 B0246 B0206


    Original     		PDF OT3116 OT3126 MJE2901 MJE2901K MJE2901T 2N3789 2N3791 B0246A B0246A O-111 b0246 PH2955T 045H2 SMCP055 SGS-Ates B0-246 MJE2955T ST MJE2955K

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB936A TO-252 Features 6.50 +0.2 5.30-0.2 Low collector-emitter saturation voltage VCE sat . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1


    Original     		PDF 2SB936A O-252

    2SB936

    Abstract: No abstract text available
    Text: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB936 TO-252 Features 6.50 +0.2 5.30-0.2 Low collector-emitter saturation voltage VCE sat . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15


    Original     		PDF 2SB936 O-252 2SB936

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0936 (2SB936), 2SB0936A (2SB936A) Silicon PNP epitaxial planar type For low-voltage switching Unit: mm Unit −40 V 1 −50 −20 Collector-emitter voltage 2SB0936 (Base open)


    Original     		PDF 2002/95/EC) 2SB0936 2SB936) 2SB0936A 2SB936A) 2SB0936

    2SB0936

    Abstract: 2SB0936A 2SB936 2SB936A
    Text: Power Transistors 2SB0936 2SB936 , 2SB0936A (2SB936A) Silicon PNP epitaxial planar type For low-voltage switching Unit: mm Unit −40 V 1 −50 −20 Collector-emitter voltage 2SB0936 (Base open) 2SB0936A VCEO Emitter-base voltage (Collector open) VEBO −5


    Original     		PDF 2SB0936 2SB936) 2SB0936A 2SB936A) 2SB0936 2SB0936A 2SB936 2SB936A

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SB909

    Abstract: 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB901 -60 -4A 40W(Tc=25ºC) 150 120 -4 -1A 2SB902 -30 -15 -100 200 125


    Original     		PDF 2SB901 2SB902 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909 2SB910 2SB909 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902

    panasonic 2SB

    Abstract: No abstract text available
    Text: Power T ransistors 2SB936, 2SB936B 2SB936, 2SB936A Silicon PNP Epitaxial Planar Type Package Dimensions Low Voltage Switching Unit I mm • Features 8.7 • Low collector-em itter saturation voltage V cec. u 3.7m«x max. 1. Imax, 6.5 max. • High speed switching


    OCR Scan     		PDF 2SB936, 2SB936B 2SB936A 939/A i32fi52 panasonic 2SB

    2SB936

    Abstract: 2SB936A
    Text: Power Transistors 2SB936, 2SB936B 2SB936, 2SB936A Silicon P N P Epitaxial Planar Type Package Dimensions Low Voltage Switching Unit : mm • Features Item Symbol 2SB936 cr aT D Collectoremitter voltage 2SB936 2SB936A Value VcHO 2SB936A V ebo IcF 2.54 ±0.3


    OCR Scan     		PDF 2SB936, 2SB936B 2SB936A 2SB936 30f-IB, 2SB939/A) 2SB936A

    2SD1539

    Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
    Text: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5


    OCR Scan     		PDF O-126 O-202 T0-220 O-220F 2SA1605 2SC2258 2SC3063 2SC2923 2SC4714 2SC3942 2SD1539 d53 pnp transistor 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258

    K 2411

    Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
    Text: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type


    OCR Scan     		PDF 3SK241 T0220F K 2411 k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019

    2SB0774

    Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
    Text: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)


    OCR Scan     		PDF O-126 2SC2258 2SC3063 2SC5340 O-202 T0-220 O-220F 2SC2923 2SC4714 2SC3942 2SB0774 2SA2004 2SB160 2SB642

    D2375

    Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
    Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A


    OCR Scan     		PDF 125mW 2SC4627 2SC5021 2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 D2375 D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526

    A1534

    Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
    Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin


    OCR Scan     		PDF T0-92 T092L: T0220F T0220 T092NL A1534 T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A

    2SC4714

    Abstract: 2SA1817 2SD1539 2SA1605 2SC2258 2SC2923 2SC3063 2SC3942 2SC3945 2SC4717
    Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions TO-126 (D 5 2 *, D53) U Type (D41) MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F


    OCR Scan     		PDF O-126 D52SK, O-202 T0-220 O-220F 2SA1605 2SC2258 2SC3063 2SC2923 2SC4714 2SA1817 2SD1539 2SA1605 2SC2258 2SC3063 2SC3942 2SC3945 2SC4717

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266