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    2SB96 Search Results

    2SB96 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SB962-Z-E2-AZ Renesas Electronics Corporation Bipolar Power Transistors, MP-3Z, / Visit Renesas Electronics Corporation
    2SB962-Z-E1-AZ Renesas Electronics Corporation Bipolar Power Transistors, MP-3Z, / Visit Renesas Electronics Corporation
    2SB962-Z-AZ Renesas Electronics Corporation Bipolar Power Transistors, MP-3Z, / Visit Renesas Electronics Corporation
    2SB962-AZ Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
    2SB963-Z-E1-AZ Renesas Electronics Corporation Bipolar Power Transistors, MP-3Z, / Visit Renesas Electronics Corporation
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    2SB96 Price and Stock

    Renesas Electronics Corporation 2SB962-Z-E1-AZ

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SB962-Z-E1-AZ 2,952
    • 1 $7.419
    • 10 $7.419
    • 100 $7.419
    • 1000 $3.7095
    • 10000 $3.7095
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    Renesas Electronics Corporation 2SB963-AZ

    Trans Darlington PNP 60V 1A 2000mW 3-Pin(2+Tab) TO-252
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip1Stop 2SB963-AZ Bulk 3
    • 1 -
    • 10 $0.256
    • 100 $0.256
    • 1000 $0.256
    • 10000 $0.256
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    2SB96 Datasheets (110)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB96 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB96 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB96 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB96 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB96 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB96 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB96 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SB96 Unknown Cross Reference Datasheet Scan PDF
    2SB960 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB960 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB960 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB960 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB960 Unknown Cross Reference Datasheet Scan PDF
    2SB962 NEC Semiconductor Selection Guide 1995 Original PDF
    2SB962 NEC Semiconductor Selection Guide Original PDF
    2SB962 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SB962 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB962 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB962 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB962 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    2SB96 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB968

    Abstract: No abstract text available
    Text: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB968 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Possible to solder the radiation fin directly to printed cicuit board. Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0


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    PDF 2SB968 O-252 2SB968

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB962-Z TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2


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    PDF 2SB962-Z O-252 -20mA 100mA

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB967 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Possible to solder the radiation fin directly to printed cicuit board. +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25


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    PDF 2SB967 O-252

    2SB965

    Abstract: 2SD1288
    Text: SavantIC Semiconductor Product Specification 2SB965 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD1288 APPLICATIONS ·For use in low frequency and power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector


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    PDF 2SB965 2SD1288 -120V; 2SB965 2SD1288

    2SB966

    Abstract: 2SD1289
    Text: SavantIC Semiconductor Product Specification 2SB966 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD1289 · APPLICATIONS ·For use in low frequency and power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector


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    PDF 2SB966 2SD1289 -120V; 2SB966 2SD1289

    2SB968

    Abstract: 2SD1295 ic 731
    Text: Power Transistors 2SB968 Silicon PNP epitaxial planar type Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 For low-frequency output amplification Complementary to 2SD1295 2.3±0.1 1 2 1:Base 2:Collector 3:Emitter U Type Package 3 Ta=25˚C Parameter Symbol Ratings Unit


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    PDF 2SB968 2SD1295 200MHz 2SB968 2SD1295 ic 731

    TC1627

    Abstract: 1627A 2SB963-Z 2SD1286-Z
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SB963-Z PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION PACKAGE DRAWING (Unit: mm) The 2SB963-Z is designed for switching, especially in Hybrid 5.5 ±0.2 • High Gain hFE = 2000 to 3000 • Complement to 2SD1286-Z


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    PDF 2SB963-Z 2SB963-Z 2SD1286-Z TC1627 1627A 2SD1286-Z

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB968 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Possible to solder the radiation fin directly to printed cicuit board. Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25


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    PDF 2SB968 O-252

    2SB0968

    Abstract: 2SB968 2SD1295
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0968 (2SB968) Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1295 • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b


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    PDF 2002/95/EC) 2SB0968 2SB968) 2SD1295 2SB0968 2SB968 2SD1295

    2SB0968

    Abstract: 2SB968 2SD1295
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0968 (2SB968) Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SD1295 ue pl d in an c se ed lud


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    PDF 2002/95/EC) 2SB0968 2SB968) 2SD1295 2SB0968 2SB968 2SD1295

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0968 (2SB968) Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SD1295 • Package ■ Features


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    PDF 2002/95/EC) 2SB0968 2SB968) 2SD1295

    k1982

    Abstract: 2SB963 TC-5642B 5642B 2SD1286 963Z
    Text: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistors 2SB963,963-Z PNPエピタキシアル形シリコン・トランジスタ (ダーリントン接続) 低周波電力増幅,低速度スイッチング用 2SB963は低速度スイッチング用として開発されたモールド・パワー・


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    PDF 2SB963 963-Z 2SB963 2SD1286 PW300 Cycle10 O-251MP-3 O-252MP-3Z D18261JJ4V0DS004 TC-5642B k1982 TC-5642B 5642B 2SD1286 963Z

    2SB962

    Abstract: k1982 5641B
    Text: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistors 2SB962,962-Z PNPエピタキシアル形シリコン・トランジスタ 低周波電力増幅,低速度スイッチング用 特 外形図(単位:mm) ★


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    PDF 2SB962 962-Z O-251MP-3 Cycle50 O-252MP-3Z D18265JJ4V0DS004 TC-5641B D18265JJ4V0DS k1982 5641B

    TRANSISTOR SMD PNP 1A

    Abstract: 2SB962-Z 2SB962
    Text: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB962-Z TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1


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    PDF 2SB962-Z O-252 -20mA 100mA TRANSISTOR SMD PNP 1A 2SB962-Z 2SB962

    2SB967

    Abstract: No abstract text available
    Text: Power Transistors 2SB967 Silicon PNP epitaxial planar type Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 For low-frequency power amplification 2.3±0.1 1.8±0.1 1 Symbol Ratings Unit Collector to base voltage VCBO –27 V Collector to emitter voltage VCEO –18 V Emitter to base voltage


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    PDF 2SB967 2SB967

    MM 1669A

    Abstract: tc1669 2SD1286 TC-1669A 2SB963-Z 2SD1286-Z 2SD128 tc1669a
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SD1286-Z NPN SILICON EPITAXIAL TRANSISTOR PACKAGE DRAWING Unit: mm The 2SD1286-Z is designed for Switching, especially in Hybrid +0.2 6.5 ±0.2 5.0 ±0.2 5.5 ±0.2 FEATURES • High hFE = 2000 to 30000 • Complement to 2SB963-Z


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    PDF 2SD1286-Z 2SD1286-Z 2SB963-Z MM 1669A tc1669 2SD1286 TC-1669A 2SB963-Z 2SD128 tc1669a

    2SA1264N

    Abstract: 2sa143z 2SA1705 2SA1283 1818 2SA1613 2SB1421 2SA1821 2SA949 2SB1207
    Text: - m Type « tt No. « Manuf. 2 S A 1 78 5 = >¥ 2 S A 1 78 8 □— A 2 S A 1 78 9 □ — A H if SANYO 2 S A 1 78 7 ^ 2 S A 1 79 0 M £ S 1 TOSHIBA NEC 2SA1432 2SA1264N 2SB966 9SA1R3? 2SA1836 B aL H I TACH! 2SB1508 * ± a FUJITSU T MATSUSHITA 2SB1546 2SB1207


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    PDF 2SB1546 2SA143Z 2SB1207 2SA1264N 2SB966 2SB1362 2SB1508 2SB1373 2SA1821 2SA1832 2sa143z 2SA1705 2SA1283 1818 2SA1613 2SB1421 2SA1821 2SA949 2SB1207

    TC1627

    Abstract: 2SD1286Z 2sb963 TC-1627A 2SB963-Z 2SD1286-Z MEI-1202 2210j 1627A
    Text: DATA SHEET SILICON TRANSISTOR 2SB963-Z PNP SILICON EPITAXIAL DARLINGTON TRANSISTOR MP-3 DESCRIPTION PACKAGE DIMENSIONS 2SB963-Z is designed for switching, especially in Hybrid in m illim eters Integrated Circuits. FEATURES • High Gain hFE = 2 000 to 3 000


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    PDF 2SB963-Z 2SB963-Z 2SD1286-Z IEI-1209) TC1627 2SD1286Z 2sb963 TC-1627A 2SD1286-Z MEI-1202 2210j 1627A

    TC1627

    Abstract: 1286-Z
    Text: J ü i ti S i- It i SILICON TRANSISTOR 2SB963-Z PNP SILICON EPITAXIAL DARLINGTON TRANSISTOR MP-3 D ESC RIPT IO N 2 SB 96 3 -2 is d esign ed for switching, especially in Hybrid PACKAGE DIMENSIONS in m illimeters Integrated Circuits. F EA T U R E S • H igh G ain hre * 2 000 to 3 000


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    PDF 2SB963-Z 1286-Z IEt-1209) 100Si TC1627 1286-Z

    Untitled

    Abstract: No abstract text available
    Text: NEC ^ î —S 7s • S '— H y > > h 2SB963,963-Z r m t i - t r a * s i t t z ^ — n- 2 S B 9 6 3 ii iy a t A - f , t > U U —, i) D arlington Transistors / V T X t — V 1/ / ~7 > ~7°^ IC CO tti K, <> > i- > f ? > :s i)' b M M K 7 A ~7' ~t~ %>ffl lÉ.


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    PDF 2SB963 963-Z 2SD1286 IEI-620)

    2SD1289

    Abstract: 2SD1289P 2SB966 PK-03
    Text: 2SB966/2SD 1289 P N P S ilic o n E p it a x ia l/ N P N S ilic o n T rip le Diffused T ra n s is to r A u d io F re q u en cy A m p lifie r 0 ^ ^ a i* 4 5 ~ 5 5 W S in g l- P P , R L = 8 Q (n^V-T ^ E I / P A C K A G E DIMENSIONS > - /tH fiJ fJ « . {Unit : mm)


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    PDF 2SB966 2SD1289 2SD1289 966/2SD 2SD1289P PK-03

    tc1626

    Abstract: 2SB962-Z MEI-1202 TC-564-1 MARKING TP NEC 2sb962
    Text: DATA SHEET SILICON TRANSISTOR 2SB962-Z PNP SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION 2S B 962-Z is designed fo r A udio frequency a m p lifie r and PACKAGE DIMENSIONS in millimeters switching, especially in Hybrid Integrated Circuits. FEATURE • L O W VCE(sat)


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    PDF 2SB962-Z 2SB962-Z IEI-1209) tc1626 MEI-1202 TC-564-1 MARKING TP NEC 2sb962

    2SB962

    Abstract: 5641B
    Text: SEC S ilic o n T ran sis to rs / \ f X 2SB962,962-Z « « y , * - } # ¿ r/\j u o d c - d c h ± % x im x 'h 'o , ofam Œ , O h p E <T U - T ' l T J o V c E .t)* , ' J ' § V fr'ïk ' - V • ^ o f T^ ig ^ 0 < , r: > - / ' ) CE(,.t) O 'M ^ W l ? T $ ) ò f z t b ,


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    PDF 2SB962 962-Z 5641B

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SD1286-Z NPN SILICON EPITAXIAL TRANSISTOR MP-3 D E S C R IP T IO N PACKAGE D IM E N SIO N S 2SD1286-Z is designed fo r S w itchin g , especially in H ybrid in m illim e te rs Integrate C ircuits. FEATURES • H igh * C om plem ent to 2SB963-Z


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    PDF 2SD1286-Z 2SD1286-Z 2SB963-Z IEI-1209)