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    2SC1317 TRANSISTOR Search Results

    2SC1317 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SC1317 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SA720

    Abstract: 2SA719 2SC1317 2SC1318 transistor 2sa720
    Text: Transistor 2SA719, 2SA720 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC1317 and 2SC1318 Unit: mm 5.0±0.2 Complementary pair with 2SC1317 and 2SC1318. Parameter Ta=25˚C Symbol Collector to


    Original     		2SA719, 2SA720 2SC1317 2SC1318 2SC1318. 2SA719 2SA720 2SA719 2SC1318 transistor 2sa720 PDF

    2SC1318 transistor

    Abstract: 2SA0719 2SA0720 2SA719 2SA720 2SC1317 2SC1318 SC-43A 2SC1317 transistor
    Text: Transistor 2SA0719, 2SA0720 2SA719, 2SA720 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification and driver amplification Complementary to 2SC1317 and 2SC1318 4.0±0.2 5.1±0.2 5.0±0.2 • Complementary pair with 2SC1317 and 2SC1318.


    Original     		2SA0719, 2SA0720 2SA719, 2SA720) 2SC1317 2SC1318 2SC1318. 2SA0719 2SC1318 transistor 2SA0719 2SA0720 2SA719 2SA720 2SC1318 SC-43A 2SC1317 transistor PDF

    2SA0719

    Abstract: 2SC1317
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0719 Silicon PNP epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SC1317 • Package  Complementary pair with 2SC1317


    Original     		2002/95/EC) 2SA0719 2SC1317 O-92B-B1 2SA0719 2SC1317 PDF

    2SA720

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0719, 2SA0720 (2SA719, 2SA720) Silicon PNP epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SC1317, 2SC1318 Unit: mm 4.0±0.2


    Original     		2002/95/EC) 2SA0719, 2SA0720 2SA719, 2SA720) 2SC1317, 2SC1318 2SC1317 2SA0719 2SA720 PDF

    2sa72

    Abstract: 2SA0719 2SA0720 2SA719 2SA720 2SC1317 2SC1318 SC-43A MA2401
    Text: Transistors 2SA0719, 2SA0720 2SA719, 2SA720 Silicon PNP epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SC1317, 2SC1318 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Features Symbol Rating Unit VCBO −30


    Original     		2SA0719, 2SA0720 2SA719, 2SA720) 2SC1317, 2SC1318 2SA0719 2SC1317 2sa72 2SA0719 2SA0720 2SA719 2SA720 2SC1318 SC-43A MA2401 PDF

    2SC1318

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1317, 2SC1318 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification and driver amplification Complementary to 2SA0719 and 2SA0720 4.0±0.2 5.1±0.2 5.0±0.2


    Original     		2002/95/EC) 2SC1317, 2SC1318 2SA0719 2SA0720 2SC1317 2SC1318 2SC1317 PDF

    2SA0719

    Abstract: 2SA719 2SC1317 XN04602
    Text: Composite Transistors XN04602 Silicon NPN epitaxial planar transistor Tr1 Silicon PNP epitaxial planar transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.50+0.10 –0.05 • 2SA0719 (2SA719) + 2SC1317 Tr1 Symbol Rating Unit Collector to base voltage


    Original     		XN04602 2SA0719 2SA719) 2SC1317 2SA0719 2SA719 2SC1317 XN04602 PDF

    2SC1318 transistor

    Abstract: 2SC1317 2SC1318 2SC1317 transistor 2SA0719 2SA0720 2SA719 2SA720
    Text: Transistor 2SC1317, 2SC1318 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SA0719 2SA719 and 2SA0720 (2SA720) Unit: mm 5.0±0.2 Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA0719 and 2SA0720.


    Original     		2SC1317, 2SC1318 2SA0719 2SA719) 2SA0720 2SA720) 2SA0719 2SA0720. 2SC1317 2SC1318 transistor 2SC1317 2SC1318 2SC1317 transistor 2SA0720 2SA719 2SA720 PDF

    2sC1317 transistor

    Abstract: 2SC1318 2SC1318 transistor 2SC1317 2SA0719 2SA0720 2SA719 2SA720 SC-43A
    Text: Transistor 2SC1317, 2SC1318 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification and driver amplification Complementary to 2SA0719 2SA719 and 2SA0720 (2SA720) 4.0±0.2 5.1±0.2 5.0±0.2 • Absolute Maximum Ratings Ta = 25°C


    Original     		2SC1317, 2SC1318 2SA0719 2SA719) 2SA0720 2SA720) 2SC1317 2sC1317 transistor 2SC1318 2SC1318 transistor 2SC1317 2SA0719 2SA0720 2SA719 2SA720 SC-43A PDF

    transistor 2sa720

    Abstract: No abstract text available
    Text: Transistor 2SA0719, 2SA0720 2SA719, 2SA720 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC1317 and 2SC1318 Unit: mm 5.0±0.2 5.1±0.2 • Features Symbol Collector to 2SA0719 base voltage


    Original     		2SA0719, 2SA0720 2SA719, 2SA720) 2SC1317 2SC1318 2SC1318. 2SA0719 2SA0720 transistor 2sa720 PDF

    2SC1317

    Abstract: 2SC1318 2SA0719 2SA0720
    Text: Transistors 2SC1317, 2SC1318 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification and driver amplification Complementary to 2SA0719 and 2SA0720 4.0±0.2 5.1±0.2 5.0±0.2 • Low collector-emitter saturation voltage VCE sat • Complementary pair with 2SA0719 and 2SA0720


    Original     		2SC1317, 2SC1318 2SA0719 2SA0720 2SC1317 2SC1317 2SC1318 2SA0720 PDF

    2SC1318

    Abstract: 2SC1317 transistor 2SC1317
    Text: Transistor 2SC1317, 2SC1318 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SA719 and 2SA720 Unit: mm 5.0±0.2 Low collector to emitter saturation voltage VCE sat . Complementary pair with 2SA719 and 2SA720.


    Original     		2SC1317, 2SC1318 2SA719 2SA720 2SA720. 2SC1317 2SC1318 2SC1317 transistor PDF

    2SC1318F

    Abstract: 2SC1317 2SA0719 2SC1318 2SC1318P
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1317 Silicon NPN epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SA0719 • Package  Low collector-emitter saturation voltage VCE(sat)


    Original     		2002/95/EC) 2SC1317 2SA0719 O-92B-B1 2SC1318F 2SC1317 2SA0719 2SC1318 2SC1318P PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SA0719, 2SA0720 2SA719, 2SA720 Silicon PNP epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SC1317, 2SC1318 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 M Di ain sc te on na tin nc ue e/ d • Features


    Original     		2SA0719, 2SA0720 2SA719, 2SA720) 2SC1317, 2SC1318 2SA0719 2SA0719 2SA0720 PDF

    2SC1318

    Abstract: 2SC1317 2SA720 2SA719 2sc131
    Text: Transistors 2SC1317, 2SC1318 Silicon NPN epitaxial planer type Unit: mm For low-frequency power amplification and driver amplification Complementary to 2SA719 and 2SA720 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.2 • Features 0.7±0.1 13.5±0.5 • Low collector to emitter saturation voltage VCE sat


    Original     		2SC1317, 2SC1318 2SA719 2SA720 2SC1317 2SC1318 2SC1317 2SA720 2sc131 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0719 Silicon PNP epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SC1317 • Package M Di ain sc te on na tin nc ue e/ d  Features


    Original     		2002/95/EC) 2SA0719 2SC1317 O-92B-B1 PDF

    2sc1815 equivalent

    Abstract: 2SC1312 equivalent of transistor 8050 equivalent of transistor 9014 NPN 2SC1740 equivalent transistor bc 549 equivalent transistor 2sc1312 transistor bc 549 BC337 8050
    Text: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table NPN Silicon Epitaxial Planar Transistor To-92 Plastic Package JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SC1214 HN / BC 337 / 8050 2SC1478 HN / BC 548 / 9014 2SC1707 HN / BC 548 / 9014 2SC1219 HN / BC 337 / 8050


    Original     		To-92 2SC1214 2SC1478 2SC1707 2SC1219 2SC1537 2SC1734 2SC1220 2SC1539 2SC1736 2sc1815 equivalent 2SC1312 equivalent of transistor 8050 equivalent of transistor 9014 NPN 2SC1740 equivalent transistor bc 549 equivalent transistor 2sc1312 transistor bc 549 BC337 8050 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01602 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 2 1 (0.65) 0.30+0.10 –0.05 • Basic Part Number


    Original     		2002/95/EC) XN01602 2SA0719A 2SA719A) 2SC1317 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01602 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 2 1 (0.65) 0.30+0.10 –0.05 • Basic Part Number


    Original     		2002/95/EC) XN01602 2SA0719A 2SA719A) 2SC1317 PDF

    2SA719A

    Abstract: 2SC1317 XN01602
    Text: Composite Transistors XN01602 Silicon PNP epitaxial planar type Tr1 Silicon NPN epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 2 1 (0.65) 0.30+0.10 –0.05 • Basic Part Number Parameter Tr2 Overall 1.1+0.2 –0.1 Symbol


    Original     		XN01602 2SA719A 2SC1317 XN01602 PDF

    2SA719A

    Abstract: 2SC1317 XN01602 2SA0719A 2SA71
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01602 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) M Di ain sc te on na tin nc ue e/


    Original     		2002/95/EC) XN01602 2SA719A 2SC1317 XN01602 2SA0719A 2SA71 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01602 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) M Di ain sc te on na tin nc ue e/


    Original     		2002/95/EC) XN01602 PDF

    2SB1446

    Abstract: 2SD2458 2sc5335 2SD1010 2SD1993 2SD1995 2SB642 2SD119 2SD2456 2SC2632
    Text: •Silicon Small Signal Transistors # General-use Low Frequency Amplifiers and Others Package No. SS-Mini Type (D1 ) S-Mini Type (D5) I 2SB1462 ' 2SB1218A . 2SD2216 2SD1819A : 2SB1219/A i 2SD1820/A i 2SA1791 i 2SC4656 Mini Type (D12) New S Type (034) ! 2SB709A


    OCR Scan     		2SB1462 2SB1218A 2SD1819A 2SB1219/A 2SD1820/A 2SB709A 2SD601A 2SB710/A 2SD602/A 2SA1309A 2SB1446 2SD2458 2sc5335 2SD1010 2SD1993 2SD1995 2SB642 2SD119 2SD2456 2SC2632 PDF

    2SC1072

    Abstract: 2SA713 2SC1328 2SC1318T 2sc1162 2SC1346 138B 2SC1317 2SC1318 2SC1327
    Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		2SC94S 2SC1368 Tc-25 120nS 2SC1072 2SA713 2SC1328 2SC1318T 2sc1162 2SC1346 138B 2SC1317 2SC1318 2SC1327 PDF