2SC1658 Search Results

Contextual Info: 2SC1658C Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)6.0 V(BR)CBO (V)10 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)10

2SC1957

Abstract: 2SC2407 2SC2101 2SC1943 2SC1914A 2SC1971 2sc2098 2SC2229 2SC2329 2SC3800
Contextual Info: - m « Type No. tt 2SC 1935 Ìd r ìl 2SC 1936 m ir i! 2SC 1937 ̱ il 2 SC 1938 «± a 2SC 1939 • ± il 2SC 1940 < •- a a 2SC 194 ^ b a a sl 2SC 1942 % Manuf. — 2SC 1943 SANYO M £ TOSHIBA H * tSO 1945,. 3 « 2SC2909 tenonin ù O K /ùJIV Jx 2SC1658

2SC144

Abstract: 2SC2240 2SC1684 2SC1919 2sc1855 2sc763 2SC2839 2sc945 2SC1047 2SC1775A
Contextual Info: - 126 - m € T y p e No. Manuf. SANYO 3í 2 T O SHIBA B NEC B HITACHI ti S i l F U J ITSU ta t MATSUSHITA m ' h MITSUBISHI □ - A ROHM 2SC 1898 Ü3 r B $ f 2SC2839 2SC1393 2SC1855 2SC1047 2SC1809 2SC 1899 SrBÍS 2SC2839 2SC1393 2SC1855 2SC1047 2SC1809 2SC1845

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

Contextual Info: NEC NE98108 NE98141 NPN SILICON HIGH SPEED SWITCHING TRANSISTOR FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: f ï = 7 GHz The NE981 series of NPN silicon transistors is designed for microwave amplifiers up to 6 GHz and ultrahigh speed

2SC1730

Abstract: 2SC1688 2SC1740A 2SC1673 2SA933LN 045PG 2SC1708 2SC1661 2SC1654 2SC1655
Contextual Info: - 108 - Ta=25sC, *EPÎïTc=25‘ C *± 2SC1653 2SC1654 £ BM BM BW. m 1% VcBO Vc e o Ic(DC) Pc (V) (V) (A) (W) Pci (W) fs. m hF E I.CBO, (max) V'c b (V) (Uh) (min) (Ta-25T!) w t ( (max) ic/ÎE (A) VCE (V) [*EPiÎtyp{g] VcE(sat <,max) (V) (V) le (A) 1e (A)

2sc1695

Abstract: 2SC1694 2SC1693 2sc1696 2sc1700 2sa835 2sc1611 2SC1699 2SC1648 2SC1616
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) DC Current Gain VCBO VEBO Ic Pc Tj fab/ft* Cob hFE PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SC1601 35 100 200 175 150 6 1 200* 2 2SC1602 35 100 150 125

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK