2SC1815L
Abstract: 2SA1015 2SC1815
Text: 2SC1815 L TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815(L) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) •
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2SC1815
2SA1015
2SC1815L
2SA1015
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2SC1815 2SA1015
Abstract: 2SC1815 2SC1815L 2SA1015L 2SA1015 2sc1815 transistor
Text: 2SC1815 L TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815(L) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • Unit: mm High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max)
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2SC1815
2SA1015
2SC1815 2SA1015
2SC1815L
2SA1015L
2SA1015
2sc1815 transistor
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2SC1815L
Abstract: 2SC1815
Text: 2SC1815 L TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815(L) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • Unit: mm High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max)
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2SC1815
2SA1015
2SC1815L
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2SA1015
Abstract: 2SC1815 2SA1015 GR 2sc1815 toshiba
Text: 2SC1815 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC1815 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications High voltage and high current: • Unit: mm VCEO = 50 V (min), IC = 150 mA (max) Excellent hFE linearity: hFE (2) = 100 (typ.)
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2SC1815
2SA1015
2SA1015
2SC1815
2SA1015 GR
2sc1815 toshiba
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2SC1815
Abstract: 2sc1815 toshiba 2SA1015 toshiba 2sc1815
Text: 2SC1815 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC1815 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • Unit: mm High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) • Excellent hFE linearity: hFE (2) = 100 (typ.)
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2SC1815
2SA1015
2SC1815
2sc1815 toshiba
2SA1015
toshiba 2sc1815
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2SC1815
Abstract: 2sc1815 toshiba 2SC1815 DATASHEET 2sc1815 transistor 2sc1815 type toshiba 2SC1815 TOSHIBA NOTE transistor 2SC1815 2SA1015 2SC1815 2SA1015
Text: 2SC1815 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC1815 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • Unit: mm High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) · Excellent hFE linearity: hFE (2) = 100 (typ.)
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2SC1815
2SA1015
2SC1815
2sc1815 toshiba
2SC1815 DATASHEET
2sc1815 transistor
2sc1815 type
toshiba 2SC1815
TOSHIBA NOTE
transistor 2SC1815
2SA1015
2SC1815 2SA1015
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2SJ74
Abstract: 2SC3136 2SK118 2SC1815 2SA1015 2SC1815 2sc2240 equivalent 2SA1349 2SA1015 2SK241 2SC2348
Text: 主要特性一覧表 [2] [ 2 ] 主要特性一覧表 TO-92 タイプ SC-43 1. TO-92 <トランジスタ> 形 名 NPN 2SC1815 PNP 2SA1015 O: 70~140 VCEO IC PC (V) (mA) (mW) 50 150 400 Y: 120~240 2SC732TM L L 2SC1815○ 2SA1015○ hFE 70~700/ 400 GR: 200~400
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SC-43)
2SC1815
2SA1015
2SC732TM
2SC1815
2SC2240
2SA970
2SC3381
2SA1349
2SJ74
2SC3136
2SK118
2SC1815 2SA1015
2sc2240 equivalent
2SA1349
2SA1015
2SK241
2SC2348
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES * Collector-Emitter voltage: BVCEO=50V * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA1015 1
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2SC1815
150mA
2SA1015
2SC1815L
2SC1815-x-T92-B
2SC1815L-x-T92-B
2SC1815-x-T92-K
2SC1815L-x-T92-K
QW-R201-006
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2SC1815
Abstract: transistor 2SC1815 2s*1815 transistor 2SC1815L 2SA1015 2sc1815 transistor
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES * Collector-Emitter voltage: BVCEO=50V * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA1015
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2SC1815
150mA
2SA1015
2SC1815L-x-T92-B
2SC1815L-x-T92-K
2SC1815G-x-T92-B
2SC1815G-x-T92-K
2SC1815-x-T92-B
2SC1815-x-T92-K
QW-R201-006
2SC1815
transistor 2SC1815
2s*1815 transistor
2SC1815L
2SA1015
2sc1815 transistor
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2s*1815 transistor
Abstract: 2SC1815L
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES * Collector-Emitter voltage: BVCEO=50V * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA1015
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2SC1815
150mA
2SA1015
2SC1815L-x-T92-B
2SC1815G-x-T92-B
2SC1815L-x-T92-K
2SC1815G-x-T92-K
QW-R201-006
2s*1815 transistor
2SC1815L
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2SA1015 GR
Abstract: 2SC1815 2SA1015 2SC1815 2SA1015
Text: 2SC1815 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 2SC1815 ○ 低周波電圧増幅用 ○ 励振段増幅用 • • • • • 単位: mm 高耐圧でしかも電流容量が大きい。 : VCEO = 50 V (最小), IC = 150 mA (最大)
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2SC1815
2SA1015
SC-43
2SA1015 GR
2SC1815
2SA1015
2SC1815 2SA1015
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2sa1015 sot-23
Abstract: 2sc1815 sot-23 2SA1015LT1 2sa1015 2SA1015L 2sa1015 equivalent 2SA1015M
Text: 2SA1015LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Package:SOT-23 * Complement to 2SC1815 * Collector Current : Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating
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2SA1015LT1
OT-23
2SC1815
150mA
2sa1015 sot-23
2sc1815 sot-23
2SA1015LT1
2sa1015
2SA1015L
2sa1015 equivalent
2SA1015M
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st 2sc1815
Abstract: st2sc1815 2SA1015 2SC1815 2s*1815 transistor
Text: ST 2SC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA1015 is recommended.
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2SC1815
2SA1015
st 2sc1815
st2sc1815
2SC1815
2s*1815 transistor
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Untitled
Abstract: No abstract text available
Text: UTC 2SC1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to 2SA1015 1 TO-92 1:EMITTER 2:COLLECTOR 3. BASE
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2SC1815
150mA
2SA1015
QW-R201-006
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES * Collector-Emitter voltage: BVCEO=50V * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA1015
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2SC1815
150mA
2SA1015
2SC1815L-x-T92-B
2SC1815G-x-T92-B
2SC1815L-x-T92-K
2SC1815G-x-T92-K
2SC1815L-x-T92-R
2SC1815G-x-T92-R
QW-R201-006
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2SC1815
Abstract: 2SC1815 GR 2SC1815L 2SC1815L Datasheet 2SA1015 103 transistor 2sc1815 transistor
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES * Collector-Emitter voltage: BVCEO=50V * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA1015
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2SC1815
150mA
2SA1015
2SC1815L
2SC1815-x-T92-A-B
2SC1815L-x-T92-A-B
2SC1815-x-T92-A-K
2SC1815L-x-T92-A-K
QW-R201-006
2SC1815
2SC1815 GR
2SC1815L
2SC1815L Datasheet
2SA1015
103 transistor
2sc1815 transistor
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2sc1815 transistor
Abstract: 2SC1815 2SC1815 DATASHEET 2SC1815L Datasheet TRANSISTOR BL 100 2SC1815L transistor 2sc1815 2SA1015 2SC1815G BVceo-50V
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES * Collector-Emitter voltage: BVCEO=50V * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA1015
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2SC1815
150mA
2SA1015
2SC1815L
2SC1815G
2SC1815-x-T92-B
2SC1815-x-T92-K
2SC1815L-x-T92-B
2SC1815L-x-T92-K
2SC1815G-x-T92-B
2sc1815 transistor
2SC1815
2SC1815 DATASHEET
2SC1815L Datasheet
TRANSISTOR BL 100
2SC1815L
transistor 2sc1815
2SA1015
2SC1815G
BVceo-50V
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2SA1015
Abstract: 2SC1815 2SC181 Common emitter amplifier 2sc1815 toshiba
Text: TO SH IBA 2SC1815 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC1815© Unit in mm AUDIO FREQUENCY VOLTAGE AMPLIFIER APPLICATIONS. LOW NOISE AMPLIFIER APPLICATIONS. • • High Breakdown Voltage, High Current Capability : V c e o = 50V (Min.), I q = 150mA (Max.)
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2SC1815Â
150mA
2SA1015Â
2SA1015
2SC1815
2SC181
Common emitter amplifier
2sc1815 toshiba
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SC1815 2SC1815 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. DRIVER STAGE AM PLIFIER APPLICATIONS. • High Voltage and High Current : V0 EO = 50V (Min.), 10 = 150mA (Max.)
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2SC1815
150mA
2SA1015
961001EAA2'
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transistor 2sc1815
Abstract: No abstract text available
Text: T O SH IB A 2SC1815 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC1815 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • High Voltage and High Current : V 0 EO = 50V (Min.), 10 = 150mA (Max.)
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2SC1815
150mA
2SA1015
transistor 2sc1815
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GR 1815
Abstract: sc 1815 2SC1815 2SC181 2SA1015 LC 1815 2sc1815 toshiba
Text: TOSHIBA 2SC1815 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC1815© Unit in mm AUDIO FREQUENCY VOLTAGE AM PLIFIER APPLICATIONS. LO W NOISE AM PLIFIER APPLICATIONS. • High Breakdown Voltage, High Current Capability : V ceo = 50V (Min.), l£ = 150mA (Max.)
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2SC1815Â
150mA
2SA1015Â
270Hz
GR 1815
sc 1815
2SC1815
2SC181
2SA1015
LC 1815
2sc1815 toshiba
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70H40
Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©
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2SA1162
2SA1163
2SC1815
2SA1015
2SC2458
2SC2459
2SA1048
2SA1049
2SC2712
2SC2713
70H40
transistor equivalent d2012
2SC734 equivalent
3sk73 equivalent
2sb502
2sa776 bl
2sc2075 equivalent
2sk For Low Noise Audio Amplifier Applications
2sa970 BL equivalent
2sa776 gr
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RN2226
Abstract: 2sa1015 sot-23 rn4601 diode 2sa1015
Text: B ia s R e s ì s t o ! B u ilt-in T ra n s is to r B R T General Use Type F6 Upper side: Similar to 2SC1815(NPN) Middle side: Similar to 2SC1815 + 2SA1015{NPN+PNP) Lower side: Similar to 2SA1015(PNP) 50 100 Similar TR V c e o (V ) Rating lcMAX(mA) Package
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2SC1815
2SC1815
2SA1015
OT-23MOD.
/RN1501
VRN2501/
RN1502
RN2502
RN1503
RN2226
2sa1015 sot-23
rn4601
diode 2sa1015
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Untitled
Abstract: No abstract text available
Text: FORWARD INTERNATIONAL ELECTRONICS L ID . 2SA1015 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER * Complement to 2SC1815 * Collector-Base Voltage VCBO=-50v C haracteristic Symbol R ating Unit Collector-Base Voltage Vcbo
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2SA1015
2SC1815
-100uA
-10mA
-10uA
-150mA
-100mA
-10mA
-100ruA
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