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    2SC197 Datasheets (113)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    2SC197 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC197 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC197 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC197 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC197 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC197 Unknown Vintage Transistor Datasheets Scan PDF
    2SC197 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC197 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SC197 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC197 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC197 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC197 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC197 Unknown Cross Reference Datasheet Scan PDF
    2SC1970 Various Russian Datasheets Transistor Original PDF
    2SC1970 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC1970 Mitsubishi NPN EPITAXIAL PLANAR TYPE Scan PDF
    2SC1970 Mitsubishi RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE Scan PDF
    2SC1970 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC1970 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC1970 Unknown High Frequency Device Data Book (Japanese) Scan PDF

    2SC197 Datasheets Context Search

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    2SC1970

    Abstract: 2sc1970 transistor T-30 parameters S transistor NPN
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1970 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC 1970 is a silicon NPN epitaxial planar typ e transistor designed Dimensions in mm fo r RF power am plifiers on V H F band m obile radio applications. 9.1 ± 0 .7


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    2SC1970 2SC1970 2sc1970 transistor T-30 parameters S transistor NPN PDF

    2SC1974

    Abstract: ELECTRONIC BALLAST compact LAMP SCHEMATIC npn 100n 1a
    Text: 2SC1974 2SC1974 ÇÆ /PRELIM INARY N PN x t , ’ ^ + * > 7 ii> ~ fU'—^M U /Si N PN Epitaxial Planar h 7 > v— vS'— ff m /Transceiver Power Output Unit * mm gi/Features 11.5max. • S fllff/H ig h gain « oSto *< 7. 6min. * »— • f f l * 5 W / P „ = 5 W (min.)


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    2SC1974 500mA 27MHz, 2SC1974 ELECTRONIC BALLAST compact LAMP SCHEMATIC npn 100n 1a PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1970 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2 S C 1 9 7 0 is a silicon N P N epitaxial planar type transistor designed D im e n sion s in mm for R F power amplifiers on V H F band m obile radio applications.


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    2SC1970 PDF

    2SC1972

    Abstract: transistor 2sc1972 ASI 2sc1972
    Text: 2SC1972 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • • • PACKAGE STYLE TO-220AB COMMON EMITTER Replaces Original 2SC1972 in Most Applications


    Original
    2SC1972 2SC1972 O-220AB O-220CE transistor 2sc1972 ASI 2sc1972 PDF

    2SC1972

    Abstract: transistor 2sc1972 2SC1972 equivalent RF POWER TRANSISTOR NPN vhf
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1972 NPN EPITAXIAL PLANAR TY P E DESCRIPTION O U TLIN E DRAW ING 2SC1972 is a silicon NPN epitaxial planar type transistor de­ signed fo r RF power am plifiers on V H F band m obile radio applications. 9.1 ± 0 .7 03.6 Dimensions in mm


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    2SC1972 175MHz O-220 175MHz. 175MHz 2SC1972 transistor 2sc1972 2SC1972 equivalent RF POWER TRANSISTOR NPN vhf PDF

    2SC1971

    Abstract: RF POWER TRANSISTOR NPN 2sc1971 equivalent transistor 1204 transistor 2sc1971 2Sc1971 transistor
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1971 NPN EPITA XIA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1971 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers on VHF band mobile radio applications. Dimensions i 0 3.6 ± 0.2 9.1 ± 0.7


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    2SC1971 2SC1971 175MHz O-220 175MHz. 175MHz 175MH2 RF POWER TRANSISTOR NPN 2sc1971 equivalent transistor 1204 transistor 2sc1971 2Sc1971 transistor PDF

    2SC1975

    Abstract: T0220AB
    Text: 2SC1975 2SC1975 -> ij n > N PN lH ° - £ * - > 7 iU 7 V “ i - i y / S i N P N Epitaxial Planar b ~7 > v —J ill ~h ffl /Transceiver Power Output 4# $fr/Features Unit ' mm ^ * ® ^ ® S ^ ^ # ^ 'o // Withstands worst overload conditions. • i® I f f i/V c Bo = 120V


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    2SC1975 T0220AB 500mA Vcb-10V, 2SC1975 T0220AB PDF

    2SC1971

    Abstract: transistor 2sc1971 RF POWER TRANSISTOR NPN 2sc1971 2Sc1971 transistor 2sc1971 application note NJ100 33MF RF POWER TRANSISTOR transistor 6w N50q
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1971 NPN EP IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2S C 1971 is a silicon N PN epitaxial planar ty p e transistor designed Dimensions in mm fo r R F pow er am plifiers on V H F band m obile radio applications.


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    2SC1971 2SC1971 175MHz T0-220 175MHz. T-30E 175MH2 transistor 2sc1971 RF POWER TRANSISTOR NPN 2sc1971 2Sc1971 transistor 2sc1971 application note NJ100 33MF RF POWER TRANSISTOR transistor 6w N50q PDF

    2sc1970

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1970 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2 SC 1970 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers on V H F band mobile radio applications. 9.1 ± 0.7 FEATURES Dimensions in mm


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    2SC1970 2sc1970 PDF

    TO220 RF POWER TRANSISTOR NPN

    Abstract: 2SC1971 transistor 2sc1971 175MH2 RF POWER TRANSISTOR NPN 175MHZ 15 w RF POWER TRANSISTOR NPN Scans-0015450
    Text: M ITSUBISHI RF POWER TRANSISTOR 2SC1971 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION O U T LIN E DRAW ING 2SC 1971 is a s ilic o n N PN e p ita x ia l p la n a r ty p e tra n s is to r designed f o r R F p o w e r a m p lifie rs o n V H F b a n d m o b ile ra d io a p p lic a tio n s .


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    2SC1971 2SC1971 TO220 RF POWER TRANSISTOR NPN transistor 2sc1971 175MH2 RF POWER TRANSISTOR NPN 175MHZ 15 w RF POWER TRANSISTOR NPN Scans-0015450 PDF

    2sc1972

    Abstract: transistor 2sc1972 TO220 RF POWER TRANSISTOR NPN 18W 12 transistor RF POWER TRANSISTOR
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1972 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1972 is a silicon NPN epitaxial planar type transistor de­ Dimensions signed for RF power amplifiers on V H F band mobile radio applications. 9.1 ± 0 .7 03.6 ± 0 .2


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    2SC1972 175MHz O-220 175MHz. 2SC1972 175MHz transistor 2sc1972 TO220 RF POWER TRANSISTOR NPN 18W 12 transistor RF POWER TRANSISTOR PDF

    2sc1970 transistor

    Abstract: 2SC1970 "RF Power Amplifiers" 2 w RF POWER TRANSISTOR NPN RF POWER TRANSISTOR NPN NPN power Transistor DSA0022949 2SC197
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1970 DESCRIPTION •High Power Gain: Gpe≥ 9.2dB,f= 175MHz, PO= 1W; VCC= 13.5V ·High Reliability APPLICATIONS ·Designed for RF power amplifiers on VHF band mobile radio


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    2SC1970 175MHz, 175MHz 2sc1970 transistor 2SC1970 "RF Power Amplifiers" 2 w RF POWER TRANSISTOR NPN RF POWER TRANSISTOR NPN NPN power Transistor DSA0022949 2SC197 PDF

    2SC1973

    Abstract: No abstract text available
    Text: 2SC1973 2SC1973 ÿ !J 3 > N P N X tf ^ 7, ; u y N P N E p itax ial P l a n a r X A * * « « X V Y 1 4 7 m / R F A m p lif ie r a n d D river • / F e a tu re s • « « W / H i R h gam • a u * ? iU f ttH I C » A < 'h ? f .y X c » w C.* ■ I f t i i Ä ^ c ^ t t / A b s o l u t e M a x im u m R a t i n g s T a = 2 5 ‘C


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    2SC1973 47m/RF 100//A, 100mA -30mA 2SC1973 PDF

    2sc1971

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1971 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAW ING 2 S C 1 9 7 1 is a silicon N P N epitaxial planar type transistor designed D im e nsions in mm for R F power amplifiers on V H F band m obile radio applications.


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    2SC1971 2SC1971 7001k PDF

    2SC1971

    Abstract: transistor 2sc1971 RF POWER TRANSISTOR NPN 2sc1971 2Sc1971 transistor
    Text: 2SC1971 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC1971 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • • • PACKAGE STYLE TO-220AB COMMON EMITTER Replaces Original 2SC1971 in Most Applications


    Original
    2SC1971 2SC1971 O-220AB O-220CE transistor 2sc1971 RF POWER TRANSISTOR NPN 2sc1971 2Sc1971 transistor PDF

    2SC1973

    Abstract: 2SC1980 2SC2076 2SA9211 2SA921
    Text: "PANASONIC I N D L /E LE K- CS Eim 72C D | tTBESSM 000^157 1 |~ T - 3i- I 2SC1973 s> U 3 > N P N i t f í ¡ í ' > T O ' " ? i s — -)~ìi ^ / S i N P N Epitaxial Planar ¿O ' K 7 - f 7 'f f i/R F Amplifier and Driver


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    2SC1973 750mW 100MHz 2SC1973 2SC1980 2SC2076 2SA9211 2SA921 PDF

    2SC1972

    Abstract: 2SC1972 equivalent
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1972 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAW ING 2 S C 1 9 7 2 is a silicon N P N epitaxial planar type transistor de­ signed for RF power amplifiers on V H F Dimensions i band m obile radio applications. 03.6 ± 0.2


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    2SC1972 2SC1972 2SC1972 equivalent PDF

    transistor 2sc1971

    Abstract: 2SC1971 2Sc1971 transistor "RF Power Amplifiers" RF POWER TRANSISTOR NPN 2sc1971 RF POWER TRANSISTOR NPN RF POWER TRANSISTOR NPN vhf vhf power transistor 2SC19 2SC197
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1971 DESCRIPTION •High Power Gain: Gpe≥ 10dB,f= 175MHz, PO= 6W; VCC= 13.5V ·High Reliability APPLICATIONS ·Designed for RF power amplifiers on VHF band mobile radio applications.


    Original
    2SC1971 175MHz, 175MHz transistor 2sc1971 2SC1971 2Sc1971 transistor "RF Power Amplifiers" RF POWER TRANSISTOR NPN 2sc1971 RF POWER TRANSISTOR NPN RF POWER TRANSISTOR NPN vhf vhf power transistor 2SC19 2SC197 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC1975 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)90ã V(BR)CBO (V)120 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)15 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0uØ° @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.50 h(FE) Max. Current gain.200


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    2SC1975 Freq150M StyleTO-220 PDF

    2SC1626Y

    Abstract: PT8860 2SC22 2SC1626-Y 2SC2494 2N5764 2N295 2N1720 2SC1626Y NPN 2N1718
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 < 1 A, BUX87 2N5010 2N5011 2SC1004 2N5012 2SC3184 2SC1004A 2N5013 2N5014 2N5015 ~~~~6~S 15 20 S01409 2SC2931 2SC1970 2SC1620 2SC22 GES5551 TH596 2SC3116 ~~g:~~A 25 30 40326 40635 2S01458 2S01483 2N5768 2N5768


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    220var 37var 2SC2117 2S0359 2S0360 TN1711 2S0414 2S0414 237var 2SC1626Y PT8860 2SC22 2SC1626-Y 2SC2494 2N5764 2N295 2N1720 2SC1626Y NPN 2N1718 PDF

    transistor 2sc1972

    Abstract: 2sc1972 2SC1972 equivalent J3 transistor RF POWER TRANSISTOR NPN vhf
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1972 NPN E P IT A X IA L PLAN AR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1972 is a silicon NPN epitaxial planar type transistor de­ signed for RF power amplifiers on VHF band mobile radio applications. Dimensions in mm 03.6 ± 0.2


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    2SC1972 2SC1972 175MHz O-220 175MHz. transistor 2sc1972 2SC1972 equivalent J3 transistor RF POWER TRANSISTOR NPN vhf PDF

    2sc1973

    Abstract: No abstract text available
    Text: 2SC1973 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)45ã V(BR)CBO (V)55 I(C) Max. (A)800m Absolute Max. Power Diss. (W)750m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.


    Original
    2SC1973 Freq300M PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original
    2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE PDF