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    2SC2527 Search Results

    2SC2527 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC2527 Fujitsu Silicon High Speed Power Transistor Scan PDF
    2SC2527 Fujitsu Silicon NPN Ring Emitter Transistor Scan PDF
    2SC2527 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2527 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC2527 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC2527 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC2527 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC2527 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC2527 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC2527 Unknown Scan PDF
    2SC2527 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC2527 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    2SC2527 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1077

    Abstract: 2SC2527
    Text: Inchange Semiconductor Product Specification 2SA1077 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC2527 ·High transition frequency ·Excellent safe operating area APPLICATIONS ·High-frequency power amplifier ·Audio power amplifiers


    Original     		PDF 2SA1077 O-220 2SC2527 O-220) -120V; 10MHz 2SA1077 2SC2527

    Untitled

    Abstract: No abstract text available
    Text: 2SC2527 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)10 Absolute Max. Power Diss. (W)60 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2SC2527 Freq80M time300nÃ

    2SA1077

    Abstract: 2SC2527
    Text: SavantIC Semiconductor Product Specification 2SA1077 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC2527 ·High transition frequency ·Excellent safe operating area APPLICATIONS ·High-frequency power amplifier ·Audio power amplifiers


    Original     		PDF 2SA1077 O-220 2SC2527 O-220) -120V; 10MHz 2SA1077 2SC2527

    2SA1077

    Abstract: 2SA107 2SC2527
    Text: JMnic Product Specification 2SA1077 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC2527 ・High transition frequency ・Excellent safe operating area APPLICATIONS ・High-frequency power amplifier ・Audio power amplifiers


    Original     		PDF 2SA1077 O-220 2SC2527 O-220) -120V; 10MHz 2SA1077 2SA107 2SC2527

    2SA1077

    Abstract: 2SC2527
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1077 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min.) ·Fast Switching Speed ·Wide Area of Safe Operation ·Complement to Type 2SC2527 APPLICATIONS


    Original     		PDF 2SA1077 -120V 2SC2527 -120V; 10MHz 2SA1077 2SC2527

    2SC2527

    Abstract: 2SA1077
    Text: SavantIC Semiconductor Product Specification 2SC2527 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SA1077 ·Fast switching speed ·Excellent safe operating area APPLICATIONS ·High frequency power amplifiers ·Audio power amplifiers


    Original     		PDF 2SC2527 O-220C 2SA1077 2SC2527 2SA1077

    2SC2527

    Abstract: 2SA1077
    Text: Inchange Semiconductor Product Specification 2SC2527 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SA1077 ・Fast switching speed ・Excellent safe operating area APPLICATIONS ・High frequency power amplifiers


    Original     		PDF 2SC2527 O-220C 2SA1077 2SC2527 2SA1077

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    MRF660

    Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
    Text: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040


    Original     		PDF 2N2876 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 MRF660 MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet

    2u 62 diode

    Abstract: KT808A diode 2U 81 kt808am 2N3076 2SD867Y kt808
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE *T ON) Min (Hz) Max toN Max (A) (8) ICBO r (CE)Mt Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . .10 . . .15 . -20


    Original     		PDF SDT3208 SDT7140 BDT95 BDT96 2u 62 diode KT808A diode 2U 81 kt808am 2N3076 2SD867Y kt808

    2sa1046

    Abstract: 2SA1023 2sa1023 equivalent 2SC2398 2SA1026 2sa1066 2SA1094 2SA1027 2SC2525 2SC2375
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SA1001 -130 -4.5 -8A 80W(Tc=25ºC) 150 100 -5 -500 40* 350


    Original     		PDF 2SA1001 2SA1002 2SA1003 1602SA1004 2SA1005 2SA1006 2SA1006A 2SA1006B 2SA1007 2SA1096 2sa1046 2SA1023 2sa1023 equivalent 2SC2398 2SA1026 2sa1066 2SA1094 2SA1027 2SC2525 2SC2375

    Untitled

    Abstract: No abstract text available
    Text: , iJnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1077 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)CEo=-120V(Min.) • Fast Switching Speed • Wide Area of Safe Operation


    Original     		PDF 2SA1077 -120V 2SC2527 O-220C -120V; 10MHz

    2SC2527

    Abstract: 2SA1077
    Text: AOK AOK Semiconductor P ro d u ct S pecification 2SA1077 Silicon PNP Power Transistors DESCRIPTION • With T 0 2 2 0 package • Complement to type 2SC2527 • High transition frequency • Excellent safe operating area APPLICATIONS • High-frequency power amplifier


    OCR Scan     		PDF 2SA1077 O-220 2SC2527 O-220) Coll12CV; 10MHz I300t0 2SC2527

    2SC2527

    Abstract: fujitsu DC-DC a1077 NPN transistor 2527
    Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE. 2SC2527 Silicon High Speed Power Transistor DESCRIPTION The 2SC 2527 is silicon NPN general purpose, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transistor R E T technology. R E T


    OCR Scan     		PDF 2SC2527 10MHz 2SC2527 fujitsu DC-DC a1077 NPN transistor 2527

    TEA 1091

    Abstract: 2Sc2565 2sc2550 2SC2525 TRANSISTOR 2sc2526 2SC2530 25C2564 2SC2526 cc 1094 DUQN ic tea 1090
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 2SC2564 2SC2565 100Hz, TEA 1091 2sc2550 2SC2525 TRANSISTOR 2sc2526 2SC2530 25C2564 2SC2526 cc 1094 DUQN ic tea 1090

    2SC2526

    Abstract: FT1551 2SA1075 2SA1076 2SA1250 2SC2428 2SC2431 FT2551 2SC2530 2SC2530 to-3
    Text: FUJITSU MICROELECTRONICS T? DE I 37Mci7ba D ü o n s s 5 3 7C Q .19 5 5 7^- <3 3 - Q /_ -_ 37 4 9 7 6 2 F u j i t s u m i c h o e l e c t r o n i c s 020000060101020100000048020202 F U J IT S U ! P1WEB Ï1 M S T 0 H LOW V O L T A G E HIGH SPEED POWER T R A N S IS T O R


    OCR Scan     		PDF 3iA97fa2 37MT7Ed5 2SC2530 2SA1080 O-220 FT1551 FT2551 2SC2528 2SA1078 2SC2526 2SA1075 2SA1076 2SA1250 2SC2428 2SC2431 2SC2530 to-3

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    2SC2625

    Abstract: 2SC2558-MA 2SC2559 2SC2559-MA 2SC2624 2SC2626 2sc2562 2SC2585 2sc2592 251C
    Text: - 128 - Ta=25°C,*EDÍSTc=25^> M 2SC2556 £ fâT 2SC2556A 2SC2553-KA B U 2 S C 2 5 5 8 —M A an n nn œ. sn 2SC2559-KA 2SC2559-MA 2SC2562 2SC2570A s 2SC2585 fâ"F B€ 2SC2590 fâT 2SC2582 & £ 2SC2591 2SC2592 fôT 2SC2594 & T 2SC2603 VcBO Vce o (V (V)


    OCR Scan     		PDF 01l3Tc 2SC2556 2SC2556A 2SC2558-KA 800MHz 2SC2558-MA 2SC2559-KA 2SC2559-MA 2SC2625 2SC2559 2SC2624 2SC2626 2sc2562 2SC2585 2sc2592 251C

    2sb504

    Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
    Text: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St


    OCR Scan     		PDF S029747 SS963& 2sb504 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V

    2SB415

    Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
    Text: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~


    OCR Scan     		PDF 4000HÂ 2SB415 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2SC2494

    Abstract: 2SC2553 2SC2431 2SC2534 2SC2495 2SC2430 2SC2443 2SC2530 2sc2555 2SC2410S
    Text: - 124 - w X Ë f à m 2SC2410S 2SC2411K 2SC2412K 2SC2412KLN 2SC2413K 2SC2427 2SC2428 2SC2429 2SC2429A 2SC2430 2SC2431 2SC2432 2SC2433 2SC2434 2SC2437 2SC2438 2SC2440 2SC2442 2SC2443 2SC2458 2SC2458L 2SC2459 2SC2462 2SC2463 2SC2464 2SC2465 2SC2466 2SC2467 2SC2468


    OCR Scan     		PDF 2SC2410S 2SC2411K 2SC2412K 2SC2412KLN 2SC2413K 2SC2427 2SC2428 2SC2543 2SC2544 2SC2545 2SC2494 2SC2553 2SC2431 2SC2534 2SC2495 2SC2430 2SC2443 2SC2530 2sc2555

    HS 153 SP

    Abstract: 2SA1152 2SA1154 2SA1115 G 2sc2681 2sc2720 2SA1138 2sa1151 2sc2592 2SC2719
    Text: - 22 - T a = 2 5 U *EP(iTc=25^ m z m g & VcBO (V) 2SA1077 VCEO (V) Ic(DO (A) (W) % m Pc* Pc & 14 (Ta=25^) , Ic BO »ÜB (V) Itili) W (V) ic/lE (A) [*EP(ítypí l / . . (V) (V) « le (A) Ib (A) SN Reg/DDC/LF PA -120 -120 -10 60 -50 -120 60 200 -5 -1 -1.8


    OCR Scan     		PDF 2SA1077 2SA1080 2SA1081 2SA1082 SA1063 150mV O-92JB 2SA1137 2SC2676 2SA1138 HS 153 SP 2SA1152 2SA1154 2SA1115 G 2sc2681 2sc2720 2SA1138 2sa1151 2sc2592 2SC2719

    transistor cross reference

    Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
    Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC


    OCR Scan     		PDF