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    2SC27 Search Results

    2SC27 Result Highlights (5)

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    2SC2721-T-AZ Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
    2SC2734 Renesas Electronics Corporation Small Signal Bip-TRSs for High Frequency Amplifier, , / Visit Renesas Electronics Corporation
    2SC2780-T1-AZ Renesas Electronics Corporation Small Signal Bipolar Transistors, POMM, / Visit Renesas Electronics Corporation
    2SC2780-AZ Renesas Electronics Corporation Small Signal Bipolar Transistors, POMM, / Visit Renesas Electronics Corporation
    2SC2784-T-A Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
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    2SC27 Price and Stock

    Toshiba America Electronic Components 2SC2712-Y,LF

    TRANS NPN 50V 0.15A SMINI
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    Toshiba America Electronic Components 2SC2712-OTE85LF

    TRANS NPN 50V 0.15A TO236
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    Toshiba America Electronic Components 2SC2713-BL,LF

    TRANS NPN 120V 0.1A TO236
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    Toshiba America Electronic Components 2SC2712-Y,LXHF

    TRANS NPN 50V 0.15A SMINI
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    Toshiba America Electronic Components 2SC2712-GR,LXHF

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    2SC27 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC27 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC27 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC27 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC27 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC27 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC27 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC27 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC27 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC27 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC27 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC27 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC270 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC270 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SC270 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC270 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC270 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SC270 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC270 Unknown Vintage Transistor Datasheets Scan PDF
    2SC270 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC270 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    ...

    2SC27 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC2768

    Abstract: No abstract text available
    Text: JMnic Product Specification 2SC2768 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High speed switching ・High reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters ・General purpose power amplifiers


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    2SC2768 O-220C 2SC2768 PDF

    2sc2712

    Abstract: C 029 Transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR „ 3 FEATURES 1 2 * High Voltage and High Current : VCEO=50V, IC=150mA Max. * Excellent hFE Linearity : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE


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    2SC2712 150mA OT-23 OT-323 2SC2712L 2SC2712G 2SC2712L-x-AE3-R 2SC2712G-x-AE3-R 2SC2712L-x-AL3-R 2SC2712G-x-AL3-R 2sc2712 C 029 Transistor PDF

    2SC2788

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SC2788 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING PIN


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    2SC2788 2SC2788 PDF

    marking VA

    Abstract: 2SC2776 marking va transistors
    Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC2776 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25


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    2SC2776 OT-23 marking VA 2SC2776 marking va transistors PDF

    ic 5ma transistor

    Abstract: RF POWER TRANSISTOR NPN 230MHZ VHF RF TRANSISTOR 2SC2736 CG transistor
    Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2736 DESCRIPTION •Low Noise ·High Gain APPLICATIONS ·Designed for use in UHF~ VHF local oscillator, frequency converter. ABSOLUTE MAXIMUM RATINGS Ta=25℃ SYMBOL PARAMETER


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    2SC2736 200MHz 230MHz 900MHz 930MHz 30MHz 300MHz 930MHz ic 5ma transistor RF POWER TRANSISTOR NPN 230MHZ VHF RF TRANSISTOR 2SC2736 CG transistor PDF

    c2705

    Abstract: c2705 transistor 2sc2705 2SA1145 C2705 data
    Text: 2SC2705 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2705 Audio Frequency Amplifier Applications Unit: mm • Small collector output capacitance: Cob = 1.8 pF (typ.) • High transition frequency: fT = 200 MHz (typ.) • Complementary to 2SA1145.


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    2SC2705 2SA1145. c2705 c2705 transistor 2sc2705 2SA1145 C2705 data PDF

    C2703

    Abstract: 2SC2703
    Text: 2SC2703 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2703 ○ 低周波電力増幅用 • 単位: mm 直流電流増幅率が高い。: hFE = 100~320 絶対最大定格 (Ta = 25°C) 項 目 記 号 定 格 単位 コ レ ク タ • ベ ー ス 間 電 圧


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    2SC2703 O-92MOD 20070701-JA C2703 2SC2703 PDF

    2SC2712

    Abstract: C1000-BL 2SA1162 SC 1000 BL
    Text: 2SC2712 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 2SC2712 ○ 低周波増幅用 ○ 低周波低雑音用 ○ AM 増幅用 単位: mm • 高耐圧です。 • コレクタ電流が大きい。: IC = 150 mA (最大) •


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    2SC2712 2SA1162 O-236MOD SC-59 2SC2712 C1000-BL 2SA1162 SC 1000 BL PDF

    2SC2710

    Abstract: 2SA1150
    Text: 2SC2710 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2710 ○ 低周波増幅用 単位: mm • 直流電流増幅率が高い。: hFE (1) = 100~320 • 2SA1150 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C)


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    2SC2710 2SA1150 2SC2710 2SA1150 PDF

    2SA1150

    Abstract: 2SC2710
    Text: 2SA1150 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1150 ○ 低周波増幅用 単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • 2SC2710 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C)


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    2SA1150 2SC2710 2SA1150 2SC2710 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC2712 3 1 2 SOT-23 WEITRON http://www.weitron.com.tw 1/4 12-Dec-2013 2SC2712 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted (Countinued) Characteristics Symbol Min Typ Unit Max ON CHARACTERISTICS DC Current Gain (IC= 2 mAdc, VCE= 6.0 Vdc) Collector-Emitter Saturation Voltage


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    2SC2712 OT-23 12-Dec-2013 10Vdc, 10mAdc) OT-23 PDF

    2SC2791

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC2791 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High collector breakdown voltage ·Excellent switching times APPLICATIONS ·High speed and high voltage switching ·Switching regulator ·High speed DC-DC converter


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    2SC2791 2SC2791 PDF

    2SC2740

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC2740 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High speed switching ·High VCBO ·Low saturation voltage APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION 1


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    2SC2740 2SC2740 PDF

    2SC2792

    Abstract: DC DC converter 50mA 400V
    Text: SavantIC Semiconductor Product Specification 2SC2792 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·High breakdown voltage ·Excellent switching times APPLICATIONS ·Switching regulator and high voltage ·Switching applications ·High speed DC-DC converter applications


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    2SC2792 500mA; 2SC2792 DC DC converter 50mA 400V PDF

    2SC3340

    Abstract: 2SA1324 2SC3339 2SC3426
    Text: —3 10. SUPER MINI PACKAGE SERIES TO-236 MOD./SOT-23 MOD. C/i 1 H CD 3» rS M H n > TRANSISTOR << •c PC (V) (mA) (mW) 50 150 150 70 -700/400 6 V CE (V) >C (mA) (V) •c (mA) >B (mA) (MHz) 0.25/0.3 100 10 (80) NPN l General Purpose 2SC2712 ! High Voltage


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    O-236 /SOT-23 2SA1162 15NEW) 2SC2532 2SC2714 2SC2715 2SC2716 2SC2996 2SC3340 2SA1324 2SC3339 2SC3426 PDF

    2SA1145

    Abstract: No abstract text available
    Text: 2SA1145 SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY AMPLIFIER APPLICATIONS. • • • Complementary to 2SC2705. Small Collector Output Capacitance : C0b = 2.5pF (Typ.) High Transition Frequency : f'r = 200MHz (Typ.) M A X IM U M RATING S (Ta = 25°C)


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    2SA1145 2SC2705. 200MHz O-92MOD --10mA --10mA, --10mA 2SA1145 PDF

    hp 2503

    Abstract: 2SC2713
    Text: SILICON NPN EPITAXIAL TYPE 2SC2713 A U D I O FREQ UENC Y G E N E R A L A P P L IC A T IO N S PUR PO SE A M P L IF IE R Unit in mm + 0i5 2.5-0.3 + Û2 5 1.5— a 15 FEATURES : . High Voltage vCEO =120V Od . Excellent hpg Linearity +I ÊE- : hF E 0.1mA /hpE(2mA)=0.95(Typ.)


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    2SC2713 2SA1163. hp 2503 2SC2713 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR T Y P E 2SC2714 U nit in mm H IG H F R E Q U E N C Y A M P L IF IE R A P P L IC A T IO N S . F M , RF, M IX , IF A M P L IF IE R A P P L IC A T IO N S . +C12 5 1.3-015 FEATURES : • dd +l HO EE­ Small Reverse Transfer Capacitance: Cre = 0.7pF Typ.


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    2SC2714 100MHz) SSC2714 PDF

    2SC2216

    Abstract: 2SC2717
    Text: T O S H IB A 2SC2216,2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216, 2SC2717 U nit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. . High Gain : Gpe = 33dB Typ. (f=45M Hz) • Good Linearity of hpE- SYMBOL CHARACTERISTIC Collector-Base Voltage


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    2SC2216 2SC2717 2SC2216, 45MHz) SC-43 PDF

    2222J

    Abstract: 2SC2707 2SA1147
    Text: AOK AOK Semiconductor P roduct S pecification 2SA1147 S ilicon PNP Pow er T ransistors DESCRIPTION • W ith TO-3 package • High power dissipations • Complement to type 2SC2707 APPLICATIONS • For power switching amplifier and general purpose applications


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    2SA1147 2SC2707 C-10A: -180V: 13MAX 2222J PDF

    2SC2738

    Abstract: 25r-r
    Text: PANASONIC INDL/ELEK -CIO 12E D • 1^35055 Q01Q4SS h Silicon NPN Triple Diffused Power Transistors r 33 os 2SC2738 NPN " TO-220 Package ) Absolute Maximum Ratings (Ta=25°G) ftem Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Collector Current


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    O-220 2SC2738 001045t, 25r-r PDF

    2SC2703

    Abstract: No abstract text available
    Text: 2SC2703 SILICON NPN EPITAXIAL TYPE PCT PROCESS A U D IO POW ER AMPLIFIER APPLICATIONS. • U n it in m m H ig h DC C u rre n t G ain : h p E = 1 00~ 320 M A X IM U M RATINGS (T a = 2 5 °C ) C H A RA CTERISTIC SYM BOL RATING U N IT C ollector-B ase V oltage


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    2SC2703 O-92M 2SC2703 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE TRANSISTOR 2SC2712 Unit in mm A U D IO FR EQUENCY GENERAL PURPOSE AM PLIFIER APPLIC A TIO N S High Voltage and High Current : Vq eo = 50V, Ic = 150mA Max. • Excellent hj’E Linearity : hfE (Iq = 0.1mA) / hpE (Ic = 2mA) =0.95 (Typ.)


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    2SC2712 150mA 2SA1162 -I-CL25 PDF

    33PFX4

    Abstract: 2SC2782 NPN 2SC2782 transistor 2sc2782 18W 12 transistor 1BW TRANSISTOR 10ID 10A ferrite bead 132pF 156pF
    Text: TO SHIBA 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS • Unit in mm Output Power : Po = 80W Min. (f= 175MHz, V e e = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING


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    2SC2782 175MHz, 2-13C1A 961001EAA2' 33PFX4 2SC2782 NPN 2SC2782 transistor 2sc2782 18W 12 transistor 1BW TRANSISTOR 10ID 10A ferrite bead 132pF 156pF PDF