2N2458
Abstract: 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253
Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386
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2N1972
2N909
ST6600
ST6601
SA2715
BSX70
2SC562
2N479
2N479A
2N2458
2N2537 texas
2N2551
2N2457
2N2429
SGS-ATES c426
2N2425
2n2398
2N2431
BF253
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2715 TRANSISTOR NPN 1. BASE FEATURES 2. EMITTER 3. COLLECTOR z z High Power Gain: Gpe=2dB(Typ.)(f=10.7MHz) Recommended for FM IF,OSC Stage and AM CONV. IF Stage.
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OT-23
OT-23
2SC2715
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oscilator
Abstract: 2SC2715
Text: 2SC2715 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 AM/FM IF AMPLIFIER,LOCAL OSCILATOR 1 OF FM/VHF TUNER High Current Gain Bandwidth 2 Product f T =600MHz 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm ABSOLUTE MAXIMUM RATINGS o Ta=25 C
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2SC2715
OT-23
600MHz
300uS
2SC2715
oscilator
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2SC2715
Abstract: No abstract text available
Text: ST 2SC2715 NPN Silicon Epitaxial Planar Transistor for high frequency amplifier applications for FM IF, OSC stage and AM CONV. IF stage The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. TO-92 Plastic Package Weight approx. 0.19g
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2SC2715
2SC2715
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bfw34 diode
Abstract: 2SC562 BSX70 LOW-POWER SILICON NPN BFR36 NA31 L/bfw34 diode 2SC941 bfw34
Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386
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2N1972
2N909
ST6600
ST6601
SA2715
BSX70
2SC562
2N479
2N479A
bfw34 diode
LOW-POWER SILICON NPN
BFR36
NA31
L/bfw34 diode
2SC941
bfw34
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2SC2715
Abstract: No abstract text available
Text: ST 2SC2715 NPN Silicon Epitaxial Planar Transistor for FM RADIO, MIX, CONV, OSC and IF amplifier . The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. TO-92 Plastic Package Weight approx.0.19g Absolute Maximum Ratings Ta = 25oC
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2SC2715
2SC2715
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2SC2715
Abstract: 2SC2715-Y 2SC2715-O 2SC2715-R
Text: 2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type PCT process 2SC2715 High Frequency Amplifier Applications Unit: mm • High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz) · Recommended for FM IF, OSC stage and AM CONV. IF stage. Maximum Ratings (Ta = 25°C)
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2SC2715
2SC2715
2SC2715-Y
2SC2715-O
2SC2715-R
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2SC2715
Abstract: No abstract text available
Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC2715 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Recommended for FM IF, OSC stage and AM CONV. IF stage. 1 0.55 High power gain: Gpe = 2dB typ. (f = 10.7 MHz). +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1
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2SC2715
OT-23
2SC2715
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B 2SC2715M TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial planar Silicon Transistor B C 1. BASE FEATURES High power gain: Gpe=27dB(f=10.7MHz)
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WBFBP-03B
WBFBP-03B
2SC2715M
2SC2715M
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marking AM sot-23
Abstract: 2SC2715
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2715 TRANSISTOR NPN 1. BASE FEATURES 2. EMITTER 3. COLLECTOR z z High Power Gain Recommended for FM IF,OSC Stage and AM CONV. IF Stage. MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
OT-23
2SC2715
marking AM sot-23
2SC2715
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2715 TRANSISTOR NPN 1. BASE FEATURES 2. EMITTER 3. COLLECTOR z z High Power Gain Recommended for FM IF,OSC Stage and AM CONV. IF Stage. MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
OT-23
2SC2715
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marking NF
Abstract: 2SC2715-O
Text: 2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type PCT process 2SC2715 High Frequency Amplifier Applications Unit: mm • High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz) • Recommended for FM IF, OSC stage and AM CONV. IF stage. Absolute Maximum Ratings (Ta = 25°C)
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2SC2715
SC-59
marking NF
2SC2715-O
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2SC2715
Abstract: No abstract text available
Text: ST 2SC2715 NPN Silicon Epitaxial Planar Transistor for high frequency amplifier applications for FM IF, OSC stage and AM CONV. IF stage The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. TO-92 Plastic Package Weight approx. 0.19g
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2SC2715
2SC2715
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2SC2715
Abstract: No abstract text available
Text: ST 2SC2715 NPN Silicon Epitaxial Planar Transistor for FM RADIO, MIX, CONV, OSC and IF amplifier . The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. TO-92 Plastic Package Weight approx.0.19g Absolute Maximum Ratings Ta = 25oC
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2SC2715
2SC2715
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2SC2715M
Abstract: 30MHZ
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B 2SC2715M TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial planar Silicon Transistor B C 1. BASE FEATURES High power gain: Gpe=27dB(f=10.7MHz)
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WBFBP-03B
WBFBP-03B
2SC2715M
2SC2715M
30MHZ
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B 2SC2715M TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial planar Silicon Transistor B C 1. BASE FEATURES High power gain: Gpe=27dB(f=10.7MHz)
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WBFBP-03B
WBFBP-03B
2SC2715M
2SC2715M
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PDF
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marking NF
Abstract: No abstract text available
Text: 2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type PCT process 2SC2715 High Frequency Amplifier Applications Unit: mm • High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz) • Recommended for FM IF, OSC stage and AM CONV. IF stage. Absolute Maximum Ratings (Ta = 25°C)
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2SC2715
SC-59
marking NF
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PDF
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2SC2715
Abstract: TRANSISTOR MARKING FA
Text: 2SC2715 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2715 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS • • + 0.5 2.5-0.3 + 0.25 High Power Gain : Gpe = 2dB (Typ.) (f=10.7MHz) Recommended for FM IF, OSC Stage and AM CONV. IF Stage.
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OCR Scan
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2SC2715
SC-59
2SC2715
TRANSISTOR MARKING FA
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PDF
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2SC2715
Abstract: No abstract text available
Text: 2SC2715 SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR U nit in HIGH FREQUENCY AMPLIFIER APPLICATIONS. FEATURES : High Power Gain : Gpe = 2dB Typ. (f= 10.7MHz) • Recommended for FM IF, OSC Stage and AM CONV. IF Stage. CE C IM A X IM U M RATINGS (Ta = 25°C)
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OCR Scan
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2SC2715
SC-59
2SC2715
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PDF
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2SA1152
Abstract: 2SC2719 2SC2770 2SC2724 2SA1154 2SC2110 2SC2132 2SC2727 2SC2159 2SC2718
Text: - 132 - M X Ë f à Ta=25‘C, *£P(ÍTc=25‘C } m % & 2SC2712 2SC2713 2SC2714 2SC2715 2SC2716 2SC2717 2SC2718 2SC2719 2SC2720 2SC2721 2SC2724 2SC2727 2SC2731 2SC2732 2SC2733 2SC2734 2SC2735 2SC2736 2SC2738 2SC2739 2SC2740 2SC2749 2SC2750 2SC2751 2SC2752
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OCR Scan
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2SC2712
2SC2713
2SC2714
2SC2715
2SC2716
2SC2717
MP-80)
2SC2751
2SA1156
O-126)
2SA1152
2SC2719
2SC2770
2SC2724
2SA1154
2SC2110
2SC2132
2SC2727
2SC2159
2SC2718
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PDF
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2SC2715
Abstract: No abstract text available
Text: 2SC2715 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2715 HIGH FREQUENCY AMPLIFIER APPLICATIONS. + 0.5 2 .5 - I1 3 + 0 .2 5 1 .5 - Q .l 5 FEATURES : • High Power Gain : Gpe = 2dB (Typ.) (f = 10.7MHz) • Recommended for FM IF, OSC Stage and AM CONV. IF Stage.
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OCR Scan
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2SC2715
SC-59
2SC2715
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PDF
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SV153A
Abstract: Sv153 varicap diode 2SC491 1SV226 Am tuning varicap 1SS242 1SV211 4007F S1B66
Text: 3. BLOCK DIAGRAM OF RECOMMENDED PRODUCTS 3.1 RF DISCRETE DEVICES FOR AM TUNER Bi'Transistor PIN Diode Single TO-92 SM 1 SV 9 9 Double use SM Q SM TO-92 USM 1SV128 1SV271 1SV172 1S V 2 3 7 1SV252 MINI SM 2 SC 3 8 0 T M 2 SC 26 6 9 2SC2715 2 SC 94 1 T M 2SC2670
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OCR Scan
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2SC2670
2SC2715
2SC2716
1SV128
1SV271
1SV172
1SV252
1SV102
SV149
2V02H
SV153A
Sv153
varicap diode
2SC491
1SV226
Am tuning varicap
1SS242
1SV211
4007F
S1B66
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PDF
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2SC2715
Abstract: No abstract text available
Text: 2SC2715 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2715 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS • • High Power Gain : Gpe = 2dB (Typ.) (f=10.7MHz) Recommended for FM IF, OSC Stage and AM CONV. IF Stage. + 0.5
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OCR Scan
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2SC2715
2SC2715
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PDF
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KZL 140 C
Abstract: 2SC2715
Text: 2SC2715 SILICON NPN EPITAXIAL PLANAR TYPE U nit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS. + Oil Û255 1.5— FEATURES: High Power Gain : Gpe = 2dB Typ. (f = 10.7MHz) • Recommended for FM IF, OSC Stage and AM CONV. IF Stage. dd +1 HO EE- -e dci +1 M A X IM U M RATINGS (Ta = 25°C)
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OCR Scan
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2SC2715
KZL 140 C
2SC2715
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