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    2SC2737 Search Results

    2SC2737 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC2737 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2737 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC2737 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC2737 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC2737 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    2SC2737 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC2737 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)80m Absolute Max. Power Diss. (W)600m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


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    2SC2737 PDF

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


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    100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717 PDF

    2SC2737

    Abstract: Low Noise uhf transistor
    Text: NEC _PRELIMINARY SPECIFICATIO N NPN SILICON TRANSISTOR ELEC TR O N DEVICE DESCRIPTION 2SC2737 The 2SC2737 is designed for Low Noise Amplifier of VHF & UHF band. PACKAGE DIMENSIONS in millim eters inches 2 5.2 MAX. FEATURES • Low Noise and High Gain


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    2SC2737 2SC2737 Low Noise uhf transistor PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF