2SC277 Search Results

marking VA

Abstract: 2SC2776 marking va transistors
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC2776 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25

2SC2774

Abstract: 2SA1170 transistor 12v 8A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1170 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -200V(Min) ·High Power Dissipation ·Complement to Type 2SC2774 APPLICATIONS ·Designed for power amplifier and general purpose

Contextual Info: io aucti, IJnc. 'J.E.IIS.U C/ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TRIPLE DIFFUSED PLANER TYPE BUILDING BLOCK TRANSISTOR INDUSTRIAL USE POWER SUPPLY 2SC2770 Outline Drawings Features

smd diode marking KC

Abstract: MARKING KB 10,7mhz Silicon NPN Epitaxial Planar Type 2SC2778 smd marking KC
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SC2778 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Mini type package, allowing downsizing of the equipment and automatic 1 insertion through the tape packing and the magazine packing. 0.55 Optimum for RF amplification, oscillation, mixing, and IF of FM/AM radios.

2SC2778

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2778 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 3 (0.95) (0.95) Collector current

BC238BP

Abstract: BF494C BC238CP BSX77 2N295 BF194 2N2954 2SC398 bf494 motorola BF332
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 2N4435 2SC2776 2SC2778 2N3293 2N3294 2N2476 2SC398 2SC398 2SC398 2SC399 ~~g~~~ 15 20 25 30 35 40 2N2477 2N2847 2N2848 2N2958 2N3115 2N3982 2N3982 2N3982 2SC2295 2SC33 2SC204 BSX76 BSX77 2SC323

2SC2778

Contextual Info: Transistor 2SC2778 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 0.40+0.10 ñ0.05 0.4±0.2 5° 1.50+0.25 -0.05 2 1 0.95 (0.95) 1.9±0.1 (0.65) ● Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. Mini type package, allowing downsizing of the equipment and

2SK2752

Abstract: 2sk1326 3SK234 2SK431 3SK238 3SK229 3SK197 2SK1479 1535M 2SK190
Contextual Info: SMALL SIGNAL TRANSISTOR •High frequency amplifier Package code Type No. CMPAK 2SC4903 2SC4906 2SC4965 2SC4967 2SC5051 CMPAK-4 2SC4994 2SC4995 2SC5079 2SC5081 MPAK 2SC2619 2SC2620 2SC2732 2SCZ733 2SC2734 2SC2735 2SC2736 2SC2776 2SC3127 2SC3513 2SC3793 2SC3867

2SC2774

Abstract: 2SC277
Contextual Info: JMnic Product Specification 2SC2774 Silicon NPN Power Transistors DESCRIPTION ・With MT-200 package ・High power dissipation ・High current capability APPLICATIONS ・For audio power amplifier and general purpose applications PINNING see Fig.2 PIN DESCRIPTION

2SA1170

Abstract: 2sc2774
Contextual Info: Inchange Semiconductor Product Specification 2SA1170 Silicon PNP Power Transistors DESCRIPTION •With MT-200 package ·High power dissipation ·Complement to type 2SC2774 APPLICATIONS ·Audio and general purpose applications PINNING see Fig.2 PIN DESCRIPTION

2SC2778

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2778 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2778 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3

Hitachi DSA0076

Abstract: 2SC2776
Contextual Info: 2SC2776 Silicon NPN Epitaxial Planar ADE-208-1077 Z 1st. Edition Mar. 2001 Application • VHF amplifier • Mixer, Local oscillator Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC2776 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit

2SC2778

Contextual Info: Transistor 2SC2778 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm +0.2 2.8 –0.3 1.45 0.95 3 +0.1 +0.2 0.65±0.15 1 0.95 2.9 –0.05 ● 0.65±0.15 Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. Mini type package, allowing downsizing of the equipment and

2SA1169

Abstract: 2SC2773 transistor 2SA1169 transistor pnp VCEO 12V Ic 1A transistor pnp 12v 1a
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1169 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -200V(Min) ·High Power Dissipation ·Complement to Type 2SC2773 APPLICATIONS ·Designed for power amplifier and general purpose

2SC2773

Contextual Info: Inchange Semiconductor Product Specification 2SC2773 Silicon NPN Power Transistors ・ DESCRIPTION ・With MT-200 package ・High current capability APPLICATIONS ・For audio power amplifier and general purpose applications PINNING see Fig.2 PIN DESCRIPTION

2SA1170

Abstract: 2SC2774
Contextual Info: JMnic Product Specification 2SA1170 Silicon PNP Power Transistors DESCRIPTION ・With MT-200 package ・High power dissipation ・Complement to type 2SC2774 APPLICATIONS ・Audio and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2

2SA1170

Abstract: 2SC2774 MT200
Contextual Info: AOK AOK Semiconductor P roduct S pecification S ilico n PNP Pow er T ransistors 2SA1170 D ESC R IPTIO N • W ith MT-200 package • High power dissipation • Complement to type 2SC2774 A P P LIC A T IO N S • A udio and general purpose applications PINNING see Fig.2

Hitachi DSA002755

Contextual Info: 2SC2776 Silicon NPN Epitaxial Planar Application • VHF amplifier • Mixer, Local oscillator Outline 2SC2776 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage

2SC1342

Abstract: 2SC2776
Contextual Info: HITACHI 2SC2776 SILIC O N NPN PLA N A R V H P A M P L IF IE R MIXER. LOCAL OSCILLATOR -r ¡ r o.<t; 2 — 2ÈL ¡a n i: i û .9 5 I o o s i 1. fun lit 5 ~ :i í« :íi : h*>î J CcOMWf {ÚirifMMÍw4% in •Mir! tO_Jn (M P A K I A B S O L U T E M AXIMUM R A T IN G S (Tas25cC)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2778 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚

sc 107 transistor

Abstract: 2SC2778 npn, transistor, sc 107 b
Contextual Info: Transistor 2SC2778 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm +0.2 2.8 –0.3 1.45 0.95 3 +0.1 +0.2 0.65±0.15 1 0.95 2.9 –0.05 ● 0.65±0.15 Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. Mini type package, allowing downsizing of the equipment and

Contextual Info: 2SC2776 Silicon NPN Epitaxial Planar HITACHI Application • VH F amplifier • M ixer, Local oscillator Outline MPAK 1 2 1. Emitter 2. Base 3. Collector 449 2SC2776 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage ^CBO

2SC2778

Contextual Info: Transistors 2SC2778 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3 • Optimum for RF amplification, oscillation, mixing, and IF of