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    2SC2857 Search Results

    2SC2857 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC2857 Sanyo Semiconductor High-voltage driver Original PDF
    2SC2857 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2857 Unknown Cross Reference Datasheet Scan PDF
    2SC2857 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC2857 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC2857 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC2857 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC2857 Sanyo Semiconductor Sanyo Datasheets, Cross References and Circuit Examples Scan PDF
    2SC2857 Sanyo Semiconductor Transistors for TV Display Video Output Use Scan PDF

    2SC2857 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC2857

    Abstract: EN753 7533 TO-92
    Text: Ordering number:EN753C NPN Triple Diffused Planar Silicon Transistor 2SC2857 High-Voltage Driver Applications Applications Package Dimensions • Color TV vertical driver, sound driver applications. unit:mm 2003A Features [2SC2857] · High breakdown voltage VCEO≥180V


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    EN753C 2SC2857 2SC2857] VCEO180V) 500mW) SC-43 2SC2857 EN753 7533 TO-92 PDF

    ITR05169

    Abstract: ITR05170 ITR05171 ITR05172 ITR05173 2SC2857
    Text: Ordering number:ENN753C NPN Triple Diffused Planar Silicon Transistor 2SC2857 High-Voltage Driver Applications Applications Package Dimensions • Color TV vertical driver, sound driver applications. unit:mm 2003B Features [2SC2857] · High breakdown voltage VCEO≥180V


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    ENN753C 2SC2857 2003B 2SC2857] VCEO180V) 500mW) ITR05169 ITR05170 ITR05171 ITR05172 ITR05173 2SC2857 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC2857E Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)180 V(BR)CBO (V)180 I(C) Max. (A)50m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition)180 V(CE)sat Max. (V)600m @I(C) (A) (Test Condition)20m


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    2SC2857E Freq50MÃ PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN753C NPN Triple Diffused Planar Silicon Transistor 2SC2857 High-Voltage Driver Applications Applications Package Dimensions • Color TV vertical driver, sound driver applications. unit:mm 2003B Features [2SC2857] · High breakdown voltage VCEO≥180V


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    ENN753C 2SC2857 2003B 2SC2857] VCEO180V) 500mW) PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    STI3009

    Abstract: ESM3004 STIP8006 ESM3002 2SA1227AP STIP-8006 TRS-500 STI-3005 ESM3001 2SC3676
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO (A) (V) Po Max h re *T ON) Min (Hz) r ICBO (CE)sat Max Max (A) (8) Max (Ohms) T Op«r Package Style Max (°C) D vices 20 Watts or More, (Cont'd) 5 10 HSE830 BUW49 BUW49 SS2007


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    HSE830 BUW49 SS2007 SS2015 SS2003 SS2019 SS2011 SS2023 2N3263 STI3009 ESM3004 STIP8006 ESM3002 2SA1227AP STIP-8006 TRS-500 STI-3005 ESM3001 2SC3676 PDF

    D40V2

    Abstract: BF469S kt940a 2SC4030 D40N5 BF881 bf109 BF883S KT940B 140 telefunken
    Text: POWER SILICON NPN Item Number Part Number I C -5 -10 15 25 30 35 40 45 - 50 55 60 65 70 -75 • 80 85 · 90 95 - 868 Ic Max Y(BR)CEO (A) (V) hFE Min Max fT ICBO Max t, Max PD Toper Max Max Max (Hz) (A) (8) (a) (W) (OC) 400 400 1.0 1.0 1.0 1.2 2.0 1.0 2.0 1.0


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    202AB O-202AB T0-202AB 205AO 220AB 237var 202var D40V2 BF469S kt940a 2SC4030 D40N5 BF881 bf109 BF883S KT940B 140 telefunken PDF

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


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    100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717 PDF

    TRANSISTOR 7533 A

    Abstract: 2SC2857 7533 TO-92
    Text: Ordering n u m b e r:E N '7 5 3 C 2SC2857 N0.753C NPN Triple Diffused Planar Silicon Transistor SA WO I High-Voltage Driver Applications Applications • Color TV vertical driver, sound driver applications Features High breakdown voltage VCgQ-l80V High collector dissipation (Pc=500mW)


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    2SC2857 500mW) TRANSISTOR 7533 A 7533 TO-92 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 753C _ 2SC2857 i NPN Triple Diffused Planar Silicon Transistor SA%YO High-Voltage Driver Applications Applications • Color TV vertical driver, sound driver applications Features • High breakdown voltage VCEq ^180V • High collector dissipation (Pc=500mW)


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    2SC2857 500mW) 2SC2857 SC-43 4147KI/8243KI PDF

    2SB1406

    Abstract: 2SK715
    Text: Product Selection Guide by Function Very High Frequency Applications Classified by package and arran g ed in order of decreasing fr. M inus sign for P N P is om itted due to space lim itations. PG tM A G ,N F:f= 0.9G H z Type N um ber Pilgt* 2SC3779 NP NP


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    2SC3779 2SC3778 2SC3777 2SC3776 2SB1406 2SK715 PDF

    SC3416

    Abstract: tt2202 2SA1371 2SC3790 2SC4732 2SC5291 2SA1829 2SC2857 2SC4075 TD-220F
    Text: SA$iYO Transistors for TV Display Video Output Us P c i t u r c s ^Excellent HP characteristic. * S m ll reverse tn n sfer capacitaac*. *C c«*lei*ntiry WP and NW type*. ♦ Adoption of MBIT, FB€T processes. ^Highly resistant to d ie le c tric breakdown.


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    Ratinfs/Ta-25 Characteristics/Ta-25t: 2SC2857 2SA1689/2SC4449 2SC5291 L26Stt Sfr-32) O-126LP, O-126 12ClP SC3416 tt2202 2SA1371 2SC3790 2SC4732 2SA1829 2SC4075 TD-220F PDF

    TO-32-070

    Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
    Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)


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    T0220ML TO-32-070 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124 PDF

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    T258-OMI FAX06 2SC144 2SD466 2sc5266 PDF

    2SB1205

    Abstract: 2S81119 2Sk222 2sa128
    Text: Low-Noise Transistors Absolute maximum ratings Device Package type Application VcBO V VCEO (V) Ve BO (V) Iç (mA) Pc (mW) rical characteristics (Ta = 25 deg. C) hFE @ V c E 'lc T| (deg. C) I c b o max fiiA l <T @ Vcc * Ic Vcs (V) &FE VCE (V) lc (mA) Vcf


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    TQ220ML T0220ML T03PB 2SB1205 2S81119 2Sk222 2sa128 PDF

    2SA1829

    Abstract: 2SC3790 p7060 2SC5291 T0-126ML 2SA1371 2SC4732 e1aj SANYO CP5 transistor 2sc3788
    Text: Transistors for TV Display Video Output Use F e a t u r e s » E x c e lle n t HF c h a r a c t e r i s t i c . * Small re v e rse t r a n s f e r c ap a c ita n c e . * Complementary PNP and NPN types. ♦ Adoption o f MBIT, FBET p ro c e sse s. * H ighly r e s i s t a n t to d i e l e c t r i c breakdown.


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    2SC2857 oin50 2SA1689/2SC4449 2SC5291 T0-126LP T0-220CI T0-220ML SC-67, OT-186) O-220FIÂ 2SA1829 2SC3790 p7060 T0-126ML 2SA1371 2SC4732 e1aj SANYO CP5 transistor 2sc3788 PDF

    2SB415

    Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
    Text: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~


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    4000HÂ 2SB415 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    vertical IC tv crt

    Abstract: 2sc3503 2sc378s
    Text: • SIUCON TRANSISTORS FOR TV/VTR USE TV/CRT DISPLAY APPLICATIONS I e New* {Classified by package and arranged in order of increasing Pp. Minus sign for PNP is omitted due to space limitations.) fol» Muuhr Applications Absolut« Maximum Ratings/T4 = 25t!


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    PDF

    SA1213

    Abstract: 2SC2852 2SC2885 ka bs 89 2SC2888 2SC288 2SC2886 2SC2890 2SC2834 2SC2837
    Text: - 136 - w 2SC2834 % tí: ÍST 2SC2834A 2SC2837 if y* r m m % > Pe Pe* V (V) (A) (W) (W) i fà te W (Ta=25ti) !c b 0 \ vn)<ix <*A) \î»ax/ VcB (V) (V) (V) (A) V(V)' Ic (A) Ib (A) 7 2.5 100 100 800 15 5 0.1 1 1.5 5 1 HS SW 900 500 7 2.5 100 100 900 15 5 0.1


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    2SC2834 2SC2834A 2SC2837 2SC2839 2SC2840 2SC2841 2SC2845 2SC2847 2SC2873 2SC2878 SA1213 2SC2852 2SC2885 ka bs 89 2SC2888 2SC288 2SC2886 2SC2890 2SC2837 PDF

    TRANSISTORS SANYO 2sc2621

    Abstract: 2SA148 2sc3503 2sc3789 2sc2621
    Text: SAfiYO Transistors for TV D i s p l a y V i d e o O u t p u t Use F e a t u r e s * Excellent HF characteristic. * Small reverse transfer capacitance. * Complementary PNP and NPN types. ♦ Adoption of MBIT, FBET processes. * Highly resistant to dielectric breakdown,


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    min50 2SB1037/2SD1459 TC-126ML MT930617TR TRANSISTORS SANYO 2sc2621 2SA148 2sc3503 2sc3789 2sc2621 PDF