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    2SC287 Search Results

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    2SC287 Price and Stock

    Toshiba America Electronic Components 2SC2873-Y(TE12L,ZC

    PB-F POWER TRANSISTOR PW-MINI MO
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    DigiKey 2SC2873-Y(TE12L,ZC Cut Tape 868 1
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    Mouser Electronics 2SC2873-Y(TE12L,ZC 683
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    Verical 2SC2873-Y(TE12L,ZC 6,000 6,000
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    2SC2873-Y(TE12L,ZC 3,000 550
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    2SC2873-Y(TE12L,ZC 965 70
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    Quest Components 2SC2873-Y(TE12L,ZC 3,244
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    2SC2873-Y(TE12L,ZC 3,244
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    Chip1Stop 2SC2873-Y(TE12L,ZC 1,600
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    2SC2873-Y(TE12L,ZC Cut Tape 965
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    EBV Elektronik 2SC2873-Y(TE12L,ZC 17 Weeks 1,000
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    Micro Commercial Components 2SC2873-Y-TP

    Interface
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    DigiKey 2SC2873-Y-TP Bulk 1,000
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    Mouser Electronics 2SC2873-Y-TP 2,586
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    Micro Commercial Components 2SC2873-O-TP

    Interface
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    DigiKey 2SC2873-O-TP Bulk 1,000
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    Toshiba America Electronic Components 2SC2873-Y(TE12LZC

    Trans GP BJT NPN 50V 2A 4-Pin PW-Mini - Tape and Reel (Alt: 2SC2873-Y(TE12L,ZC)
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    Avnet Americas 2SC2873-Y(TE12LZC Reel 4,000 12 Weeks 1,000
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    Avnet Asia 2SC2873-Y(TE12LZC 32 Weeks 1,000
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    Toshiba America Electronic Components 2SC2873-Y(TE12L,F)

    Trans GP BJT NPN 50V 2A 1000mW 4-Pin(3+Tab) PW-Mini T/R
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    Verical 2SC2873-Y(TE12L,F) 5,967 124
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    Quest Components 2SC2873-Y(TE12L,F) 4,773
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    2SC2873-Y(TE12L,F) 4,773
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    Chip1Stop 2SC2873-Y(TE12L,F) 6,350
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    Find more 2SC287 price and stock on Findchips.com

    2SC287 Datasheets (155)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC287 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC287 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC287 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC287 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC287 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC287 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC287 Unknown Cross Reference Datasheet Scan PDF
    2SC287 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC287 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC287 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC287 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SC2870 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC2870 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC2870 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC2870 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2870 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC2870 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC2870 Unknown Cross Reference Datasheet Scan PDF
    2SC2870L Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SC2870L Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    ...

    2SC287 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd marking MY

    Abstract: marking MY 2SC287 2SC2873 MY SMD MARKING
    Text: Transistors SMD Type Silicon PNP Epitaxial Type 2SC2873 Features Low saturation voltage: VCE sat = 0.5 V (max) (IC = 1 A). High speed switching time: tstg = 1.0 s (typ.). Small flat package. PC = 1.0 to 2.0 W Absolute Maximum Ratings Ta = 25 Parameter Symbol


    Original     		PDF 2SC2873 smd marking MY marking MY 2SC287 2SC2873 MY SMD MARKING

    2SC2877

    Abstract: 2SA1217
    Text: SavantIC Semiconductor Product Specification 2SC2877 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA1217 ·Good linearity of hFE APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stage of 5 watts


    Original     		PDF 2SC2877 O-126 2SA1217 2SC2877 2SA1217

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Silicon NPN Epitaxial Type 2SC2873 Features Low saturation voltage: VCE sat = 0.5 V (max) (IC = 1 A). High speed switching time: tstg = 1.0 s (typ.). Small flat package. PC = 1.0 to 2.0 W (Mounted on Ceramic Substrate) Absolute Maximum Ratings Ta = 25


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC2873 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2873 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 1 A) •


    Original     		PDF 2SC2873 2SA1213

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1213 TRANSISTOR PNP 1. BASE FEATURES z Complementary to 2SC2873 z Small Flat Package z Power Amplifier and Switching Applications z Low Saturation Voltage


    Original     		PDF OT-89-3L OT-89-3L 2SA1213 2SC2873

    MRF9331

    Abstract: 2SC3029 2N2206 2SC2821 MMBR5031 K918 MMT3960A 2n3681 340t 2SC330
    Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 2N2318 2N2320 2N3953 MMT3960 lBFT24 2N5186 ST6110 ST6125 ST6120 MMT807 ~~~~~~1 15 20 2N2967 2N3010 2N2475 2N709 MM1748A 2N3832 2N709A 2N2784 ~~~~;~ 25 30 2N2257 2N3681 2SC3011 2SC2876 2SC3301 MRF9331


    Original     		PDF 2N2318 2N2320 2N3953 MMT3960 lBFT24 2N5186 ST6110 ST6125 ST6120 MMT807 MRF9331 2SC3029 2N2206 2SC2821 MMBR5031 K918 MMT3960A 2n3681 340t 2SC330

    2SC2879

    Abstract: 2sc2879 transistor
    Text: 2SC2879 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm l Specified 12.5V, 28MHz Characteristics l Output Power : Po = 100WPEP l Power Gain : Gp = 13dB l Collector Efficiency


    Original     		PDF 2SC2879 30MHz 28MHz 100WPEP -24dB 28MHz 000MHz 001MHz 2SC2879 2sc2879 transistor

    Untitled

    Abstract: No abstract text available
    Text: 2SC2873 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2873 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching time: tstg = 1.0 s (typ.)


    Original     		PDF 2SC2873 2SA1213

    Untitled

    Abstract: No abstract text available
    Text: 2SC2873 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2873 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High speed switching time: tstg = 1.0 µs (typ.)


    Original     		PDF 2SC2873 2SA1213

    Untitled

    Abstract: No abstract text available
    Text: 2SC2878 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)50 I(C) Max. (A)300m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).3 @I(C) (A) (Test Condition)30.0m


    Original     		PDF 2SC2878 Freq30M

    2SC2878

    Abstract: 2SC2878 A
    Text: 2SC2878 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC2878 For Muting and Switching Applications Unit: mm High emitter-base voltage: VEBO = 25 V min • High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA) • Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA)


    Original     		PDF 2SC2878 2SC2878 2SC2878 A

    pnp hfe 120-240

    Abstract: 2SA1217 2SC2877 2SC28
    Text: JMnic Product Specification 2SA1217 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC2877 ・Good linearity of hFE APPLICATIONS ・Audio frequency power amplifier ・Low speed switching ・Suitable for output stage of 5 watts


    Original     		PDF 2SA1217 O-126 2SC2877 pnp hfe 120-240 2SA1217 2SC2877 2SC28

    2SC2877

    Abstract: 2SA1217
    Text: Inchange Semiconductor Product Specification 2SC2877 Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SA1217 ·Good linearity of hFE APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stage of 5 watts


    Original     		PDF 2SC2877 O-126 2SA1217 2SC2877 2SA1217

    2SA1217

    Abstract: 2SC2877
    Text: Inchange Semiconductor Product Specification 2SA1217 Silicon PNP Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SC2877 ·Good linearity of hFE APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stage of 5 watts


    Original     		PDF 2SA1217 O-126 2SC2877 2SA1217 2SC2877

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SC2873 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current ICM: 2 A Collector-base voltage


    Original     		PDF OT-89 2SC2873 OT-89 500mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1213 TRANSISTOR PNP 1. BASE FEATURES z Complementary to 2SC2873 z Small Flat Package z Power Amplifier and Switching Applications z Low Saturation Voltage


    Original     		PDF OT-89-3L OT-89-3L 2SA1213 2SC2873 -10mA -500mA -50mA

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SC2873 Unit in tmn POWER AMPLIFIER APPLICATIONS. 1.6MAX. 4.6MAX. POWER SWITCHING APPLICATIONS. 1.7MAX. r a Q4±Û05 - FEATURES: . Low Saturation Voltage : VCE sat =0.5V(Max.) (Ic-IA) + Q08 Q45-Û05 . High Speed Switching Time : tstg=l.Oa s (Typ.)


    OCR Scan     		PDF 2SC2873 2SA1213 4-Q05 50BASE--

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIALTYPE PCT PROCESS 2SC2873 Unit in mm POWER AMPLIFIER APPLICATIONS. 4.6MAX. POWER SWITCHING APPLICATIONS. 1.7MAX. 1.6 MAX. Q4±a05 FEATURES: . Low Saturation Voltage •• vCE(sat)=0.5V(Max.) u (IC=1A) +aoa a45~ao5 . High Speed Switching Time : tstg=1.0/<s(Typ.)


    OCR Scan     		PDF 2SC2873 2SA1213 250mm2

    2SC1565

    Abstract: 2sD1392 2SC3469 2SD1431 2SC495 2SC2824 2SD1388 2SD600 2SD1876 2SD1499
    Text: - M € T y p e No. tt it 2SD 1377K eh ft 2SD 1377 - 2SD 13 7 8 □— A 2SD 1 379 € Manuf. m h SANYO 2 TOSHIBA 2SC1212A 2SD549 2SD1520L/S 2SC2877 2SD 1381 - □ —A 2SD600 2SC2824 2SD 1382 — □ —A 2SD600 2SC2824 2SD 1383 s. □ —A □ —A 2SD1207


    OCR Scan     		PDF 2SD1196 2SD633 2SD1634 2SD2024 1377K 2SD1024 2SD600 2SC495 2SC1212A 2SD946 2SC1565 2sD1392 2SC3469 2SD1431 2SC495 2SC2824 2SD1388 2SD1876 2SD1499

    2SC2872

    Abstract: No abstract text available
    Text: h ~7 > y 7 $ /Transistors 2SC2872 2SC2872S 2SC2872/2SC2872S NPN /M edium Power Am p. Epitaxial Planar N P N S ilicon Transistors • WÄ • W f i \H£|Ü<|,/Diinensions U nit : mm 1) V ce (s a tj^ S fit 2SC2872 h *7 2SC 2 8 7 2 S h ri 8±ci VcE (s a ti= 4 0 m V Typ.


    OCR Scan     		PDF 2SC2872/2SC2872S 2SC2872 2SC2872S 2SC2872 100mA/10mA) 400mA/40mA) SC-43

    2sc287a

    Abstract: J JB transistor
    Text: SEC SILICON TRANSISTOR ELECTRON DEVICE 2SC287A B VHF OSCILLATOR NPN SILICON EPITAXIAL TRANSISTOR "D IS K MOLD" D E S C R IP T IO N P A C K A G E D IM E N S IO N S (U nit : mm) The 2SC287A(B) ¡5 an NPN silicon epitaxial transistor intended for use as V H F oscillator in a tuner of a T V receiver.


    OCR Scan     		PDF 2SC287A 1100MHz J JB transistor

    2SC2879

    Abstract: 150PEP
    Text: high-Free O utput Transistors F5 Package €3 Po W HF/CB N . 2SC2395 20PEP 2SC2099 30MHz 012.7 09.5 10-12PEP 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* 200PEP 2SC2652" *: Vcc=28V Vcc=50V F5 Package Po(W) VHF 175MHz \ 012.7 □ 9.5 6 2SC2638 15 2SC2639 32


    OCR Scan     		PDF 30MHz 10-12PEP 20PEP 60PEP 100PEP 150PEP 200PEP 2SC2395 2SC2099 2SC2290 2SC2879

    2SC287A

    Abstract: 2sc287 SC4242
    Text: 2SC287A 2SC287A =l> h 7 V i / T ^ / N P N NPN V H Ff-a—^ SILICON EPITAXIAL TRANSISTOR TV Tuner Local Oscillator 7 0 D f - X ^ / M IC R O D IS K 18/FEATURES • SV' fT (1100 MHz TYP. vhf Co •rb'b f* „ (10ps TYP.) (* i <0 ¿* /PACKAGE DIMENSIONS (Unit:mm)


    OCR Scan     		PDF 2SC287A JB38J! 2SC287A SC-42 Vcb-15V, 31/77S* 2sc287 SC4242

    2SC2878

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2878 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC2878 Unit in mm FOR MUTING AND SWITCHING APPLICATIONS • • • High Emitter-Base Voltage : Ve b O ~ 25V Min. High Reverse hjrg : Reverse hjrg = 150 (Typ.) (VCE= —2V, IC = —4mA) Low On Resistance


    OCR Scan     		PDF 2SC2878 2SC2878