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    SANYO Semiconductor Co Ltd 2SC2911

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    2SC291 Datasheets (93)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC291 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC291 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC291 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC291 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC291 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC291 Unknown Cross Reference Datasheet Scan PDF
    2SC291 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC291 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC291 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SC291 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC291 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC291 Unknown Vintage Transistor Datasheets Scan PDF
    2SC291 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC291 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC2910 Sanyo Semiconductor High-voltage switching, predriver Original PDF
    2SC2910 Sanyo Semiconductor NPN Epitaxial Planar Silicon Transistor Original PDF
    2SC2910 Various Russian Datasheets Transistor Original PDF
    2SC2910 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2910 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC2910 Unknown Japanese Transistor Cross References (2S) Scan PDF

    2SC291 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC2914

    Abstract: "Switching Regulator"
    Text: Inchange Semiconductor Product Specification 2SC2914 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING see Fig.2


    Original
    PDF 2SC2914 2SC2914 "Switching Regulator"

    IC 7812

    Abstract: 2SA1208 CHARACTERISTICS OF IC 7812 specifications of OF IC 7812 OF IC 7812 IC 7811 2SC2910 ITR03005 for ic 7812 7812 ic
    Text: Ordering number:ENN781G PNP/NPN Epitaxial Planar Silicon Transistors 2SA1208/2SC2910 High-Voltage Switching Audio 80W Output Predriver Applications Features Package Dimensions • Adoption of FBET process. · High breakdown voltage. · Excellent linearity of hFE and small Cob.


    Original
    PDF ENN781G 2SA1208/2SC2910 2006B 2SA1208/2SC2910] 2SA1208 IC 7812 2SA1208 CHARACTERISTICS OF IC 7812 specifications of OF IC 7812 OF IC 7812 IC 7811 2SC2910 ITR03005 for ic 7812 7812 ic

    2Sc2911

    Abstract: 2SA1209
    Text: Ordering number:EN779C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1209/2SC2911 160V/140mA High-Voltage Switching and AF 100W Predriver Applications Features Package Dimensions • Adoption of FBET process. · High breakdown voltage. · Good linearity of hFE and small Cob.


    Original
    PDF EN779C 2SA1209/2SC2911 60V/140mA 2SA1209/2SC2911] 10IB1= 10IB2 O-126 2SA1209 2Sc2911 2SA1209

    2SC2911

    Abstract: 2SA1209
    Text: 2SA1209 / 2SC2911 Ordering number : EN0779E SANYO Semiconductors DATA SHEET 2SA1209 / 2SC2911 PNP / NPN Epitaxial Planar Silicon Transistors 160V / 140mA High-Voltage Switching and AF 100W Predriver Applications Features • • • • Adoption of FBET process.


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    PDF 2SA1209 2SC2911 EN0779E 140mA 2SA1209 2SC2911

    2SA1209

    Abstract: 2SC2911
    Text: 2SA1209 / 2SC2911 注文コード No. N 0 7 7 9 E 三洋半導体データシート 半導体ニューズ No.N779C をさしかえてください。 PNP / NPN エピタキシァルプレーナ型シリコントランジスタ 2SA1209 / 2SC2911 160V / 140mA スイッチング ,


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    PDF 2SA1209 2SC2911 N779C 140mA 2SA1209 1111MH D246YO 5091YO 2SC2911

    Untitled

    Abstract: No abstract text available
    Text: 2SC2912 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)200 I(C) Max. (A)140m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)0.1uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.250 h(FE) Max. Current gain.


    Original
    PDF 2SC2912 Freq150M StyleTO-126

    8C533

    Abstract: 2SC3478-k 2SC3744 2SC3478K 2sc3248 2SC2230Y je5551 2SC238 SANYO NEG KT611
    Text: LOW-POWER SILICON NPN Item Number Part Number 5 10 2S0668A 2S0757 2SC2383 2S0669A 8F294 TMPT5551 MPS5551M S05551 2SC1654 2SC1654 ~:8~~654N6 15 20 MM8C1654N6 2SC2910 2SC2230 2SC2383R MM8C1654N7 MM8C1654N7 JE5551A 8C533 ~~g~~:~ 25 30 2SC3645R JE5551 8SR19A A


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    PDF 2S0668A 2S0757 2SC2383 2S0669A 8F294 TMPT5551 MPS5551M S05551 2SC1654 8C533 2SC3478-k 2SC3744 2SC3478K 2sc3248 2SC2230Y je5551 2SC238 SANYO NEG KT611

    2SC2913

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SC2913 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·High breakdown voltage ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING See Fig.2


    Original
    PDF 2SC2913 2SC2913

    specifications of OF IC 7812

    Abstract: IC 7812 OF IC 7812 2SC2910 2SA1208 IC 7814 CHARACTERISTICS OF IC 7812 IC 7812 information 7812 ic for ic 7812
    Text: Ordering number:EN781F PNP/NPN Epitaxial Planar Silicon Transistors 2SA1208/2SC2910 High-Voltage Switching Audio 80W Output Predriver Applications Features Package Dimensions • Adoption of FBET process. · High breakdown voltage. · Excellent linearity of hFE and small Cob.


    Original
    PDF EN781F 2SA1208/2SC2910 2SA1208/2SC2910] SC-51 2SA1208 specifications of OF IC 7812 IC 7812 OF IC 7812 2SC2910 2SA1208 IC 7814 CHARACTERISTICS OF IC 7812 IC 7812 information 7812 ic for ic 7812

    2sc2910

    Abstract: 2sa1208
    Text: Ordering number:ENN781G PNP/NPN Epitaxial Planar Silicon Transistors 2SA1208/2SC2910 High-Voltage Switching Audio 80W Output Predriver Applications Features Package Dimensions • Adoption of FBET process. · High breakdown voltage. · Excellent linearity of hFE and small Cob.


    Original
    PDF ENN781G 2SA1208/2SC2910 2006B 2SA1208/2SC2910] 2SA1208 2sc2910 2sa1208

    2SC2911-SPICE

    Abstract: 2SC2911 npn 100n
    Text: 2SC2911 SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 53.00f NF 1 IKF 100.0m NE 2 NR 1 90.00m IKR NC 2 IRB 600.0u RE 190.0m XTB XTI 3 VJE 680.0m TF 700p VTF 500 PTF VJC 500.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A A


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    PDF 2SC2911 2SC2911-SPICE 2SC2911 npn 100n

    2Sc2911

    Abstract: 2SA1209 ENN779D
    Text: Ordering number:ENN779D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1209/2SC2911 160V/140mA High-Voltage Switching and AF 100W Predriver Applications Features Package Dimensions • Adoption of FBET process. · High breakdown voltage. · Good linearity of hFE and small Cob.


    Original
    PDF ENN779D 2SA1209/2SC2911 60V/140mA 2009B 2SA1209/2SC2911] O-126 2SA1209 2Sc2911 2SA1209 ENN779D

    2SC2913

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC2913 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·High breakdown voltage ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING See Fig.2


    Original
    PDF 2SC2913 2SC2913

    2SC2914

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC2914 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING see Fig.2


    Original
    PDF 2SC2914 2SC2914

    2SA12

    Abstract: c2911 SA1209 2SA1209 2sc291 2SC2911 A1209 120EI
    Text: Ordering num ber: EN779C _ 2SA12Q9/2SC2911 PNP/NPN Epitaxial Planar Silicon Transistors 160V/140mA High-Voltage Switching and AF 100W Predriver Applications Features • Adoption o f FBET process • High breakdown voltage • Good linearity o f hpE and small


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    PDF EN779C 2SA1209/2SC2911 60V/140mA 2SA1209 2SA12 c2911 SA1209 2SA1209 2sc291 2SC2911 A1209 120EI

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN779C 2SA1209/2SC2911 No.779C SAHYO PNP/NPN Epitaxial Planar Silicon Transistors 160V/140mA High-Voltage Switching and AF 100W Predriver Applications i Features • A d o p tio n o f F B E T process • High breakdown voltage • G ood linearity o f h F E and small C o b


    OCR Scan
    PDF EN779C 2SA1209/2SC2911 60V/140mA 2SC2911 2SA1209/2SC22911

    2SA1208

    Abstract: No abstract text available
    Text: Ordering number: EN 7 8 1 F 2SA1208/2SC2910 No.781F PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, Audio 80W Output Predriver Applications F eatu res •Adoption of FB E T process. . High breakdown voltage. ■Excellent linearity of hEE and small c0b.


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    PDF 2SA1208/2SC2910 2SA1208 8270MH/6080MO/3187AT/3125KI/0193KI 2SA1208

    2SA1210

    Abstract: 2SC2912 P33-07 A1210 la 1201 sanyo TO-220AA transistor BC 536
    Text: SANYO SEMICONDUCTOR CORP IE E D I 7 cH 7 0 7 b T - a - c n 2SC2912 NPN /pnp Epitaxial Planar Silicon Transistors 200 9A High Voltage Switching, AF 1 5 0 W Predriver Applications 2SA1210 780C Features • Adoption o f FBET process • High breakdown voltage


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    PDF 2SC2912 707Li 2SA1210 Characteristics/H81 B1252 0DGB752 2SA1210 2SC2912 P33-07 A1210 la 1201 sanyo TO-220AA transistor BC 536

    2SA1210

    Abstract: 2SC2912 FP 1018 JIS G3141 DDD3710 BC PNP Transistor
    Text: SA N YO SEMICONDUCTOR CORP 12 E D I T 2SA1210 1 - 3 l \ PN P / npn Epitaxial P la n a r S ilic o n Transistors 2009A 2SC2912 - Q 7 * ^ 7 Q7b Q003775 0 High Voltage Switching, A F 150W Predriver Applications 780C Features • Adoption of F B E T process • High breakdown voltage


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    PDF 2SA1210 0DGB752 2SA1210 2SC2912 FP 1018 JIS G3141 DDD3710 BC PNP Transistor

    Untitled

    Abstract: No abstract text available
    Text: XÖ-SHIHTTTnrrS’C R ETE/O P TO J 9097250 TOSHIBA ~5b i6L 07 616 <DISCRETE/OPTO SILICON NPN TRIPLE DIFFUSED TYPE DET^aTTaSO v DGD7hlt, - r 3 3 * 1 3 - 2SC2914 _ INDUSTRIAL APPLICATIONS U n i t in m m S W IT C H IN G REGULATOR AND HIGH VOLTAGE S W IT C H IN G A P P L IC A T IO N S .


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    PDF 2SC2914 0007blÃ

    3D NPN 400V

    Abstract: 2SC2913 AC74 ic s 544 a
    Text: t o s h ì b T T m s c r e t é T ó p "Sb W 9097250 TOSHIBA »rilQITaSO <D IS CR E TE /O PT O 56C 07613 2SC2913 Q0Q7bl3 Q D SILICON NPN TRIPLE DIFFUSED TYPE INDUSTRIAL APPLICATIONS Unit in mm S W IT C H IN G REGULATOR AND HIGH VOLTAGE S W IT C H IN G A P P L IC A T IO N S .


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    PDF 2SC2913 I111UI111111. 3D NPN 400V 2SC2913 AC74 ic s 544 a

    b1181

    Abstract: sj 2025 2SA1210 JIS B1181 sj 2038 2SC2912
    Text: SANYO SEMICONDUCTOR CORP 12E D I T - Q 1 - 3 7 * ^ 7 Q7b Q003775 0 l \ " 2SA1210 Epitaxial P la n a r S ilic o n T ra n sisto rs P N P/npn 2009A High Voltage S w itch in g , A F 1 5 0 W Predriver A p p lications 2SC2912 780C Features • A d o p tio n o f F B E T process


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    PDF 2SA1210 B1181 B1252 sj 2025 2SA1210 JIS B1181 sj 2038 2SC2912

    2sc2915 hitachi

    Abstract: 2Sc515a 2SC2611 2SC1515 2SC2181 2SC2894 2SC1212A 2SC1214 2SC2917 2SC2762
    Text: 116 - a m. £ Type No. 2SC 1490 t h□— ^ 2SC 1491 i h□ — =7 2SC2102 2SC2102 2SC 2SC 2SC 2SC ¿01/ 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC ^ h□— •=£ h□ — 2SC2103 2SC2181 2SC2282 2SC3008-KA 2SC2917 2SC2181 2SC1165 2SC2917 2SC2762 2SC 1514


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    PDF 2SC2102 2SC2281 2SC2282 2SC2103 2SC3008-KA 2SC2181 2SC2917 2sc2915 hitachi 2Sc515a 2SC2611 2SC1515 2SC2894 2SC1212A 2SC1214 2SC2917 2SC2762

    2SC2914

    Abstract: E710
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SC2914 INDUSTRIAL APPLICATIONS Unit in nun SW IT C H IN G REGULATOR AND HIGH VOLTAGE SW IT C H IN G A P P L IC A T IO N S . 0 25.0 MAX- HIG H SPEED DC DC CONVERTER A P P L I C A T I O N S . 0 2 1 . 0 MAX- FEATURES: . Excellent Switching Times


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    PDF 2SC2914 2SC2914 E710