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    2SC301 Price and Stock

    Amphenol Aerospace JT01RE-22-2SC(301)

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    Amphenol Aerospace JT07RE-20-2SC(301)

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    Amphenol Aerospace JT06RE-22-2SC(301)

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    Amphenol Aerospace JT01RE-20-2SC(301)

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    Amphenol Aerospace JTP00RE-24-2SC(301)

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    2SC301 Datasheets (64)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC301 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC301 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC301 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC301 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC301 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC301 Unknown Cross Reference Datasheet Scan PDF
    2SC301 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC301 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC301 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC301 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC301 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3010 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3010 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3011 Kexin Silicon NPN Epitaxial Original PDF
    2SC3011 TY Semiconductor Silicon NPN Epitaxial - SOT-23 Original PDF
    2SC3011 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3011 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3011 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC3011 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3011 Unknown Transistor Substitution Data Book 1993 Scan PDF

    2SC301 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1232

    Abstract: 2SC3012
    Text: JMnic Product Specification 2SA1232 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PFa package ・Complement to type 2SC3012 APPLICATIONS ・Audio frequency power amplifier. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter


    Original     		PDF 2SA1232 2SC3012 -130V; 2SA1232 2SC3012

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    MRF9331

    Abstract: 2SC3029 2N2206 2SC2821 MMBR5031 K918 MMT3960A 2n3681 340t 2SC330
    Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 2N2318 2N2320 2N3953 MMT3960 lBFT24 2N5186 ST6110 ST6125 ST6120 MMT807 ~~~~~~1 15 20 2N2967 2N3010 2N2475 2N709 MM1748A 2N3832 2N709A 2N2784 ~~~~;~ 25 30 2N2257 2N3681 2SC3011 2SC2876 2SC3301 MRF9331


    Original     		PDF 2N2318 2N2320 2N3953 MMT3960 lBFT24 2N5186 ST6110 ST6125 ST6120 MMT807 MRF9331 2SC3029 2N2206 2SC2821 MMBR5031 K918 MMT3960A 2n3681 340t 2SC330

    2SC331 equivalent

    Abstract: 2SC331 2sa467 2SC328 2SC386A 2sc317 2SC337 2SC368 2SC369 2sc327
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SC301 25 5 100 260 150 85 10 0.1 400* 3.5 2SC302 50 5 100


    Original     		PDF 2SC301 2SC302 2SC303 2SC304 2SC305 2SC306 2SC307 2SC308 2SC309 2SC310 2SC331 equivalent 2SC331 2sa467 2SC328 2SC386A 2sc317 2SC337 2SC368 2SC369 2sc327

    2SC3012

    Abstract: 2SA1232
    Text: SavantIC Semiconductor Product Specification 2SC3012 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SA1232 ·High transition frequency APPLICATIONS ·Audio frequency power amplifier. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


    Original     		PDF 2SC3012 2SA1232 2SC3012 2SA1232

    2SA1232

    Abstract: 2SC3012
    Text: SavantIC Semiconductor Product Specification 2SA1232 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SC3012 APPLICATIONS ·Audio frequency power amplifier. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base


    Original     		PDF 2SA1232 2SC3012 -130V; 2SA1232 2SC3012

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SC3011 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low Noise Figure: NF=2.3dB Typ. f=1GHz 1 High fT : fT=6.5GHz 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High Gain :|S21e|2=12dB(TYP.) 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1


    Original     		PDF 2SC3011 OT-23

    2SC3012

    Abstract: 2SA1232
    Text: SavantIC Semiconductor Product Specification 2SC3012 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SA1232 ·High transition frequency APPLICATIONS ·Audio frequency power amplifier. PINNING PIN DESCRIPTION 1 Base 2


    Original     		PDF 2SC3012 2SA1232 2SC3012 2SA1232

    2SC3012

    Abstract: 2sa123 2SA1232
    Text: Inchange Semiconductor Product Specification 2SC3012 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SA1232 ·High transition frequency APPLICATIONS ·Audio frequency power amplifier. PINNING PIN DESCRIPTION 1 Base 2


    Original     		PDF 2SC3012 2SA1232 2SC3012 2sa123 2SA1232

    marking MA

    Abstract: 2SC3011
    Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC3011 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low Noise Figure: NF=2.3dB Typ. f=1GHz 1 High fT : fT=6.5GHz 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High Gain :|S21e|2=12dB(TYP.) 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1


    Original     		PDF 2SC3011 OT-23 marking MA 2SC3011

    Untitled

    Abstract: No abstract text available
    Text: 2SC301 1 SIUCQN NPN EPITAXIAL PLANAR t y p e t r a n s i s t o r U H F-C BAND LOW NOISE AMPLIFIER APPLICATIONS. • • • High Gain Low Noise Figure High f r U nit in mm : |S 2 ie|2= 12dB Typ. : NF = 2.3dB (Typ.), f= lG H z : f'i’ = 6.5GIIz M AXIM UM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC301 SC-59 S21eP 2SC3011 --j50

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    Untitled

    Abstract: No abstract text available
    Text: 2SC3011 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3011 Unit in mm U H F-C BAND LO W NOISE AM PLIFIER APPLICATIONS High Gain Low Noise Figure High fp + 0.5 2.5-0.3 |S2lel2= 12dB Typ. NF = 2.3dB (Typ.), f=lG H z fT = 6.5GHz + 0.25 .1 .5 -0 .1 5 .


    OCR Scan     		PDF 2SC3011 S21el

    VHF transmitter circuit 10m

    Abstract: 2SC3018 Z5550
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3018 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION 2SC3018 is a silicon NPN epitaxial planar type transistor desig­ ned for 7.2V olts VHF power amplifiers applications. OUTLINE DRAWING D im e n s io n s in m m FEATURES • High gain: Gpe ë 13dB @f = 175MHz, Vcc = 7.2V


    OCR Scan     		PDF 2SC3018 2SC3018 175MHz, T-31E VHF transmitter circuit 10m Z5550

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3011 U nit in mm U H F -C BAND LOW NOISE AMPLIFIER APPLICATIONS. +as 2 .5 -C l3 High Gain |S21eP = 12dB Typ. Low Noise Figure NF = 2.3dB (Typ.), f= lG H z + CX25 1.3-ais High f'p -HO dd +I E£ fp = 6.5GHz M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC3011 S21eP SC-59 21el2 --j50

    2sc3055

    Abstract: T03B 2SC3008-KA 2SC3030 2SC3008-MA 2SC2999 2SC3000 2SC3001 2SC3004 2SC3006
    Text: - 142 - ili íS±¿ Ta=25cC, *EpíÍTc=25t¡ A7 -a f-L -a m iâ VCBO VcEO (V) (V) Ic(DC) (A) Pc* (W) (W) HF A 25 20 0.03 0.15 2SC3000 HF A 30 20 0.03 0.25 2SC3001 HF PA 20 2SC2999 2SC3004 BÍL 2SC3006 2SC3007 2SC3008-KA an 2SC30Û8-MA sm 2SC3011 2SC3012


    OCR Scan     		PDF 2SC2999 2SC3000 2SC3001 2SC3004 2SC3006 400MHz 2SC3007 2SC3008â 2SC3008-M 2SC3011 2sc3055 T03B 2SC3008-KA 2SC3030 2SC3008-MA

    2SC3011

    Abstract: No abstract text available
    Text: 2SC3011 TOSHIBA 2SC3011 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm U H F-C BAND LO W NOISE AM PLIFIER APPLICATIONS. High Gain Low Noise Figure High fp |S2lel2= 12dB Typ. NF = 2.3dB (Typ.), f=lG H z fT = 6.5GHz 2 .5 + — 0 .5 0 .3 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC3011 SC-59 2SC3011

    2SC3017

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3017 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING Dimensions in mm 2 S C 3 0 1 7 is a silicon NPN epitaxial planar typ e transistor specifi­ cally designed for V H F p ow er amplifiers applications. FEATURES •


    OCR Scan     		PDF 2SC3017 2SC3017 022/iF,

    2sC3011

    Abstract: No abstract text available
    Text: 2SC3011 TO SH IBA 2SC3011 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE U H F-C BAND LOW NOISE AMPLIFIER APPLICATIONS • • • High Gain Low Noise Figure High fp |S2lel2= 12dB Typ. NF = 2.3dB (Typ.), f=lG H z fT = 6.5GHz MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC3011 SC-59 2sC3011

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3018 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION 2SC3018 is a silicon NPN epitaxial planar type transistor desig­ ned for 7.2V olts VHF power amplifiers applications. OUTLINE DRAWING D im e n s io n s in m m FEATURES • High gain: Gpe ë 13dB @f = 175MHz, Vcc = 7.2V


    OCR Scan     		PDF 2SC3018 2SC3018 175MHz, 135MHz 4155MHz

    Untitled

    Abstract: No abstract text available
    Text: 2SC3011 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3Q11 Unit in mm U H F-C BAND LOW NOISE AM PLIFIER APPLICATIONS. High Gain Low Noise Figure TTicrh -fin + 0.5 —0.3 : |S2iel2= 12dB Typ. : NF = 2.3dB (Typ.), f=lG H z • fm = fi üPrïïy


    OCR Scan     		PDF 2SC3011 2SC3Q11 SC-59

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3019 NPN EPITAXIAL PLANAR T Y P E DISCRETION OUTLINE DRAWING 2SC3019 is silicon NPN epitaxial planar typ e transistor Dimensions in mm designed fo r RF power am plifiers in U H F band. FEATURES • • High power gain: Gpe


    OCR Scan     		PDF 2SC3019 2SC3019 900MHz) 160mW 100mW 1000pF 100pF, 560pF,

    NEC 2706

    Abstract: 2SC1815 2SC2283 KA 2717 2SC1971 2SD810 2SC3359 nec 2741 2SC2645 2SC3012
    Text: - m. % Type No. 2SC 2706 / 2SC 2SC 2SC 2SC 2SC 2 SC 2SC 2SC 2SC 2710 ^ 2711 2712" 2713 " 2714 _ 27 15 " 2716 — 2717 y 2718 « Manuf. = b $ SANYO TOSHIBA 2SC3182N M 'S . 2SD1047 % 3Ê 2SD1935 m NEC 2SC3012 2SC4639 2SD810 2SC2281 2SC1623 K 2SC2814 2SC2814


    OCR Scan     		PDF 2SD1047 2SC3182N 2SC3012 2SD1935 2SD810 2SD919 2SC1741S 2SC2281 2SC1971 2SC4639 NEC 2706 2SC1815 2SC2283 KA 2717 2SC1971 2SD810 2SC3359 nec 2741 2SC2645 2SC3012

    2SC3011

    Abstract: No abstract text available
    Text: 2SC3011 TOSHIBA 2SC3011 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm U H F-C BAND LO W NOISE AM PLIFIER APPLICATIONS + 0.5 High Gain Low Noise Figure High fp |S2lel2= 12dB Typ. NF = 2.3dB (Typ.), f=lG H z fT = 6.5GHz M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC3011 SC-59 S21el2 2SC3011