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    Toshiba America Electronic Components 2SC3267-GR(F)

    Trans GP BJT NPN 20V 2A 400mW 3-Pin
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    2SC3267 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC3267 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3267 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3267 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3267 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3267 Unknown Cross Reference Datasheet Scan PDF
    2SC3267 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3267 Toshiba SILICON NPN EPITAXIAL TYPE (PCT PROCESS) TRANSISTOR Scan PDF
    2SC3267 Toshiba NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWICHING APPLICATIONS) Scan PDF
    2SC3267 Toshiba NPN Transistor Scan PDF
    2SC3267 Toshiba TO-92 Mini Package Transistors / Junction FETs Scan PDF
    2SC3267-BL Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3267BL Toshiba Silicon NPN Epitaxial Transistors Scan PDF
    2SC3267-GR Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3267GR Toshiba Silicon NPN Epitaxial Transistors Scan PDF
    2SC3267-Y Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3267Y Toshiba Silicon NPN Epitaxial Transistors Scan PDF

    2SC3267 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1297

    Abstract: 2SC3267
    Text: 2SA1297 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1297 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A • Complementary to 2SC3267. Absolute Maximum Ratings (Ta = 25°C)


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    PDF 2SA1297 2SC3267. 2SA1297 2SC3267

    Untitled

    Abstract: No abstract text available
    Text: 2SC3267GR Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).5 @I(C) (A) (Test Condition)2.0


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    PDF 2SC3267GR Freq120M

    2SA1297

    Abstract: 2SC3267
    Text: 2SA1297 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1297 ○ 低周波電力増幅用 ○ 電力スイッチング用 単位: mm • 2SC3267 とコンプリメンタリになります。 • 許容コレクタ損失が大きい。: PC = 400 mW (Ta = 25°C)


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    PDF 2SA1297 2SC3267 2SA1297 2SC3267

    Untitled

    Abstract: No abstract text available
    Text: 2SA1297 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1297 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A • Complementary to 2SC3267. Maximum Ratings (Ta = 25°C)


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    PDF 2SA1297 2SC3267.

    Untitled

    Abstract: No abstract text available
    Text: 2SC3267 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3267 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) @IC = 2 A • Complementary to 2SA1297 Absolute Maximum Ratings (Ta = 25°C)


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    PDF 2SC3267 2SA1297

    2SA1297

    Abstract: 2SC3267
    Text: 2SA1297 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1297 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A • Complementary to 2SC3267. Absolute Maximum Ratings (Ta = 25°C)


    Original
    PDF 2SA1297 2SC3267. 2SA1297 2SC3267

    2SA1297

    Abstract: 2SC3267
    Text: 2SA1297 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1297 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A • Complementary to 2SC3267. Absolute Maximum Ratings (Ta = 25°C)


    Original
    PDF 2SA1297 2SC3267. 2SA1297 2SC3267

    2SA1297

    Abstract: 2SC3267
    Text: 2SA1297 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1297 低周波電力増幅用 電力スイッチング用 単位: mm • 2SC3267 とコンプリメンタリになります。 • 許容コレクタ損失が大きい。: PC = 400 mW (Ta = 25°C)


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    PDF 2SA1297 2SC3267 2SA1297 2SC3267

    2SC3267

    Abstract: 2SA1297
    Text: 2SC3267 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3267 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) @IC = 2 A · Complementary to 2SA1297 Maximum Ratings (Ta = 25°C)


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    PDF 2SC3267 2SA1297 2SC3267 2SA1297

    Untitled

    Abstract: No abstract text available
    Text: 2SC3267 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).5 @I(C) (A) (Test Condition)2.0


    Original
    PDF 2SC3267 Freq120M

    2SA1297

    Abstract: 2SC3267
    Text: 2SC3267 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3267 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) @IC = 2 A • Complementary to 2SA1297 Absolute Maximum Ratings (Ta = 25°C)


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    PDF 2SC3267 2SA1297 2SA1297 2SC3267

    Untitled

    Abstract: No abstract text available
    Text: 2SC3267 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3267 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) @IC = 2 A • Complementary to 2SA1297 Maximum Ratings (Ta = 25°C)


    Original
    PDF 2SC3267 2SA1297

    2SA1297

    Abstract: 2SC3267
    Text: 2SC3267 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3267 ○ 低周波電力増幅用 ○ 電力スイッチング用 単位: mm • 2SA1297 とコンプリメンタリになります。 • 許容コレクタ損失が大きい。: PC = 400 mW (Ta = 25°C)


    Original
    PDF 2SC3267 2SA1297 2SA1297 2SC3267

    2SA1297

    Abstract: 2SC3267
    Text: 2SA1297 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1297 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A · Complementary to 2SC3267. Maximum Ratings (Ta = 25°C)


    Original
    PDF 2SA1297 2SC3267. 2SA1297 2SC3267

    Untitled

    Abstract: No abstract text available
    Text: 2SA1297 TOSHIBA 2 S A 1 297 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm PO W ER SWITCHING APPLICATIONS 4.2M AX. — I . • • Low Saturation Voltage : V@e (sat)= -0.5V (Max.) @Iq = -2 A Complementary to 2SC3267.


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    PDF 2SA1297 2SC3267. 961001EAA2'

    A1297

    Abstract: 2SA1297 2SC3267
    Text: 2SA1297 TO SH IBA 2 S A 1 297 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS 4.2M AX. • • Low Saturation Voltage : V q E (sat)“ —0.5V (Max.) @Iq = —2A Complementary to 2SC3267.


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    PDF 2SA1297 2SC3267. A1297 2SA1297 2SC3267

    2SA1297

    Abstract: 2SC3267
    Text: TOSHIBA 2SC3267 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3267 Unit in mm PO W ER AM PLIFIER APPLICATIONS PO W ER SWICHING APPLICATIONS 4.2M AX. • • Low Saturation Voltage : VCE (sat) = 0-5V (Max.) @Iq = 2A Complementary to 2SA1297


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    PDF 2SC3267 2SA1297 961001EAA2' 2SA1297 2SC3267

    2SA1297

    Abstract: 2SC3267
    Text: TO SH IBA 2SC3267 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3267 Unit in mm POWER SWICHING APPLICATIONS 4.2M AX. • • Low Saturation Voltage : VCE (sat)“ 0.5V (Max.) @Iq = 2A Complementary to 2SA1297 0.4


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    PDF 2SC3267 2SA1297 55MAX. 2SA1297 2SC3267

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR. SEM ICONDUCTOR T O SH IB A TECHNICAL 2 SA 1297 DATA SILICON PNP EPITAXIAL TYPE PCT PROCESS (2SA1297) POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS • Low Saturation Voltage : V q e (sat)= —0.5V (Max.) @Iq = —2A • Complementary to 2SC3267.


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    PDF 2SA1297) 2SC3267. 2SA1297

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3267 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3267 Unit in mm POWER SWICHING APPLICATIONS 4 .2 M A X. • • Low Saturation Voltage : V q e (sat) = 0-5V (Max.) @Iq = 2A Complementary to 2SA1297


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    PDF 2SC3267 2SA1297 961001EAA2'

    A1297

    Abstract: 2SA1297 2SC3267 A-1297
    Text: TOSHIBA 2SA1297 2 S A 1 297 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm PO W ER SWITCHING APPLICATIONS 4.2M AX. • • Low Saturation Voltage : V qE (sat)= —0-5V (Max.) @Iq = —2A Complementary to 2SC3267.


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    PDF 2SA1297 A1297 2SC3267. 55MAX. 961001EAA2' A1297 2SA1297 2SC3267 A-1297

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3267 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3267 Unit in mm POWER SWICHING APPLICATIONS Û.2MAX. • • Low Saturation Voltage : V q E (sat)~ 0.5V (Max.) @Iq = 2A Complementary to 2SA1297 0.55MAX.


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    PDF 2SC3267 2SA1297 55MAX. 961001EAA2'

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 2SA1245 167 *2SC1923 2SC2996 266 * 2N3905 2SA1255 170 *2SC1959 2SC3011 272


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    PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    2SC3216

    Abstract: 2SC3217-M 2SC3214 2SA1295 2SC3264 2SC3217 2sc3246 2SC3264 2SC3215 2SA1285 2SC3251
    Text: - 150 - Ta=25t , *EPÍÍTc=25t;) m 2SC3214 2SC3215 2SC3216 2SC3217—M 2SC3218-M 2SC3225 2SC3233 2SC3242 2SC3242A 2SC3243 2SC3244 2SC3245 2SC3245A 2SC3246 2SC3247 2SC3249 2SC3250 2SC3251 2SC3253 2SC3254 2SC3255 2SC3256 2SC3257 2SC3258 2SC3263 2SC3264 2SC3265


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    PDF EPttTc-25 2SC3214 2SC3215 2SC3216 2SC3217-M 800MHz 2SC3218-M 2SC3225 2SC3233 2SC3216 2SC3214 2SA1295 2SC3264 2SC3217 2sc3246 2SC3264 2SC3215 2SA1285 2SC3251