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EVVO Semiconductor 2SC3356 RF TRANS NPN 12V 7GHZ SOT23
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SC3356	Digi-Reel	1,070		1	1 $0.1 10 $0.044 100 $0.0329 1000 $0.02497 10000 $0.02497	Buy Now
	2SC3356	Cut Tape	1,070		1	1 $0.1 10 $0.044 100 $0.0329 1000 $0.02497 10000 $0.02497	Buy Now
	2SC3356	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.02239	Buy Now
EVVO Semiconductor 2SC3357 RF TRANS NPN 12V 6.5GHZ SOT89
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SC3357	Digi-Reel	248		1	1 $0.27 10 $0.184 100 $0.27 1000 $0.09508 10000 $0.09508	Buy Now
	2SC3357	Cut Tape	248		1	1 $0.27 10 $0.184 100 $0.27 1000 $0.09508 10000 $0.09508	Buy Now
	2SC3357	Reel			1,000	1 - 10 - 100 - 1000 $0.08553 10000 $0.06273	Buy Now
California Eastern Laboratories (CEL) 2SC3356-A RF TRANS NPN 12V 7GHZ SOT23
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SC3356-A					1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) 2SC3357-A RF TRANS NPN 12V 6.5GHZ SOT89
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SC3357-A					1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) 2SC3357-T1-A RF TRANS NPN 12V 6.5GHZ SOT89
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SC3357-T1-A	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	2SC3357-T1-A	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	2SC3357-T1-A	Digi-Reel			1	1 $1.33 10 $1.33 100 $1.33 1000 $1.33 10000 $1.33	Buy Now

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2SC335 Datasheets (144)

Part	Manufacturer	Description	Datasheet Type	PDF
2SC335	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SC335	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SC335	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SC335	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2SC335	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SC335	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SC335	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SC3351-L	NEC	For amplify low noise and high frequency.	Original	PDF
2SC3351-T1B	NEC	For amplify low noise and high frequency.	Original	PDF
2SC3351-T2B	NEC	For amplify low noise and high frequency.	Original	PDF
2SC3352	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SC3352	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SC3352	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SC3352	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF

2SC3352	Unknown	Cross Reference Datasheet	Scan	PDF
2SC3352	Panasonic	Silicon NPN Triple Diffused Junction Mesa Type Power Transistors	Scan	PDF
2SC3352	Panasonic	Silicon NPN Triple Diffused Junction Mesa Type Power Transistor	Scan	PDF
2SC3352A	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SC3352A	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SC3352A	Panasonic	Silicon NPN Triple Diffused Junction Mesa Type Power Transistors	Scan	PDF

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2SC335 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SC3352 Abstract: 2SC335 Text: Inchange Semiconductor Product Specification 2SC3352 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・High voltage ・High speed switching APPLICATIONS ・For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector	Original	2SC3352 O-220Fa O-220Fa) 2SC3352 2SC335	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SC3355 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER  FEATURES 1 * Low Noise and High Gain * High Power Gain  TO-92 ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SC3355L-T92-B 2SC3355G-T92-B	Original	2SC3355 2SC3355L-T92-B 2SC3355G-T92-B 2SC3355L-T92-K 2SC3355G-T92-K QW-R201-036	PDF
2SC3356 Abstract: R25 2sc3356 marking r25 NPN 2SC3356-T1B NE85633 PU10209EJ02V0DS Text: NPN SILICON RF TRANSISTOR NE85633 / 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz	Original	NE85633 2SC3356 NE85633-A 2SC3356 NE85633-T1B-A 2SC3356-T1B R23/Q R24/R R25/S PU10209EJ02V0DS R25 2sc3356 marking r25 NPN PU10209EJ02V0DS	PDF
2SC3356 s2p Abstract: 2SC3356 Application Note 2SC3356 nec marking 2sc3356 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz	Original	2SC3356 2SC3356-T1 2SC3356 s2p 2SC3356 Application Note 2SC3356 nec marking 2sc3356	PDF
2SC3355 Abstract: transistor 2sc3355 and application PA33 marking PA33 Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. PACKAGE DIMENSIONS	Original	2SC3355 2SC3355 transistor 2sc3355 and application PA33 marking PA33	PDF
SOT R23 Abstract: marking R24 2SC3356 SOT R25 r25 q Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR	Original	OT-23-3L OT-23-3L 2SC3356 width350s, SOT R23 marking R24 2SC3356 SOT R25 r25 q	PDF
Untitled Abstract: No abstract text available Text: Transistors IC SMD Type Product specification 2SC3356 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 High power gain. 0.55 NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz +0.1 1.3-0.1 +0.1 2.4-0.1 Low noise and high gain. 0.4 3	Original	2SC3356 OT-23	PDF
Untitled Abstract: No abstract text available Text: Transistors IC SMD Type Product specification 2SC3357 Features Low Noise and High Gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz	Original	2SC3357	PDF
2SC3356-T1B-A Abstract: 2SC3356 2SC3356 s2p 2SC3356-T1B Text: PreliminaryData Sheet 2SC3356 R09DS0021EJ0300 Rev.3.00 NPN Silicon RF Transistor Jun 28, 2011 NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz	Original	2SC3356 R09DS0021EJ0300 2SC3356 2SC3356-T1B 2SC3356-A 2SC3356-T1B-A 2SC3356 s2p	PDF
2SC3356 Application Note Abstract: 2sc3356 2SC3356R25 2SC3356 r25 Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC3356 Features • • • • Low noise and high gain High power gain Marking Code: 2SC3356=R25 Case Material: Molded Plastic. UL Flammability	Original	2SC3356 2SC3356 OT-23 2SC3356 Application Note 2SC3356R25 2SC3356 r25	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR	Original	OT-23-3L OT-23-3L 2SC3356	PDF
Untitled Abstract: No abstract text available Text: UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES Low Noise and High Gain High Power Gain 2 1 MARKING 3 R25 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER	Original	2SC3356 OT-23 QW-R206-024	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SC3356 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER DESCRIPTION The UTC 2SC3356 is designed for such applications as: DC/DC converters, supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low supply voltage	Original	2SC3356 2SC3356 2SC3356L 2SC3356G 2SC3356-x-AE3-R 2SC3356L-x-AE3-R 2SC3356G-x-AE3-R OT-23 2SC3356L-x-AE3-R QW-R206-024	PDF
2SC3357 Abstract: RF Transistor s-parameter vhf sot89 TRANSISTOR MARKING AV marking 2sc3357 ic 0620 Text: DATA SHEET SILICON TRANSISTOR 2SC3357 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC3357 is an NPN silicon epitaxial transistor designed for Unit: mm low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic.	Original	2SC3357 2SC3357 RF Transistor s-parameter vhf sot89 TRANSISTOR MARKING AV marking 2sc3357 ic 0620	PDF

2SC3354 Abstract: No abstract text available Text: Transistors 2SC3354 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm 4.0±0.2 • Features • Optimum for high-density mounting • Allowing supply with the radial taping • High transition frequency fT 15.6±0.5	Original	2SC3354 2SC3354	PDF
2SC3355 Abstract: 2SC3355, npn F10G NPN SILICON EPITAXIAL TRANSISTOR Text: UTC 2SC3355 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES Low Noise and High Gain High Power Gain 1 TO-92 1: BASE 2: EMITTER 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER SYMBOL RATING	Original	2SC3355 QW-R201-036 2SC3355 2SC3355, npn F10G NPN SILICON EPITAXIAL TRANSISTOR	PDF
2SC3354 Abstract: No abstract text available Text: Transistors 2SC3354 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm 4.0±0.2 0.8 3.0±0.2 2.0±0.2 • Optimum for high-density mounting • Allowing supply with the radial taping • High transition frequency fT	Original	2SC3354 2SC3354	PDF
2SC3356 Abstract: IC nec 555 transistor 1431 T marking 544 low noise amplifier Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.	Original	2SC3356 2SC3356 IC nec 555 transistor 1431 T marking 544 low noise amplifier	PDF
Untitled Abstract: No abstract text available Text: UTC 2SC3355 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES Low Noise and High Gain High Power Gain 1 TO-92 1: BASE 2: EMITTER 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER SYMBOL RATING	Original	2SC3355 QW-R201-036	PDF
2SC3353A Abstract: 25C33 hig voltage high speed NPN transistors 2SC3353 Text: Power Transistors ^32052 0 0 1 b4 2 4 . 2SC3353, 2SC3353A 335 2S C 3353, 2S C 3353A Silicon NPN Triple-Diffused Junction M esa Type P ackage Dim ensions High B reakdown Voltage, High Sp eed Switching • F eatures • • • • Unit I mm 4.4 max. . High speed switching	OCR Scan	R32flS2 D01b424 2SC3353, 2SC3353A 2SC3353 35B52 2SG3353, 2SC3353A 25C33 hig voltage high speed NPN transistors	PDF
6852 d TRANSISTOR Abstract: 2SC3357 Text: DATA SHEET SILICON TRANSISTOR 2SC3357 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SC3357 is an NPN silicon epitaxial transistor designed for PACKAGE DIMENSIONS Unit: mm low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic.	OCR Scan	2SC3357 2SC3357 OT-89) S22e-FREQUENCY 6852 d TRANSISTOR	PDF
Untitled Abstract: No abstract text available Text: 2SD1949 / 2SD1484K / 2SC1741S 2SC3359S Transistors I M edium Pow er T ran sistor 50V, 0.5A 2S D 1949 / 2SD1484K / 2SC 1741 AS • F eatu res • A b s o l u t e m a x im u m r a tin g s (T a = *2 5 ÌD ) 1 ) High cu rre nt (Ic ^ O . S A ) 2 ) Low VcE{sat). (Typ. 0 .1 V at Ic /Ib = 150/15m A )	OCR Scan	2SD1949 2SD1484K 2SC1741S 2SC3359S 150/15m 2SC1741AS	PDF
C3353 Abstract: 2SC3353 2SC3353A Text: P o w e r T r a n s i s t o r ; • o o io a 33 bT B sasM 3 ^ 2 ■ P N C 5 C 3353>2SC 3353A 2SC3353, 2SC3353A Silicon NPN Triple-Diffused Junction Mesa Type Package Dimensions High Breakdown Voltage, High Speed Switching U n it ! mm 4.4m ax. 10.2m ax. ■ Features	OCR Scan	2SC3353 2SC3353A 2SC3353, C3353 2SC3353A	PDF
6852 d TRANSISTOR Abstract: 2SC3357 3zm-5 Text: SILICON TRANSISTOR 2SC3357 N P N S IL IC O N E P IT A X IA L T R A N S IS T O R PO W E R M IN I M O L D D E S C R IP T IO N P A C K A G E D IM E N S IO N S in millimeters The 2SC3357 is an N P N silicon epitaxial transistor designed for low noise amplifier at V H F , U H F and C A T V band.	OCR Scan	2SC3357 2SC3357 6852 d TRANSISTOR 3zm-5	PDF

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EVVO Semiconductor 2SC3356

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California Eastern Laboratories (CEL) 2SC3356-A

California Eastern Laboratories (CEL) 2SC3357-A

California Eastern Laboratories (CEL) 2SC3357-T1-A

2SC335 Datasheets (144)

2SC335 Datasheets Context Search

2SC3352

Untitled

2SC3356

2SC3356 s2p

2SC3355

SOT R23

Untitled

Untitled

2SC3356-T1B-A

2SC3356 Application Note

Untitled

Untitled

Untitled

2SC3357

2SC3354

2SC3355

2SC3354

2SC3356

Untitled

2SC3353A

6852 d TRANSISTOR

Untitled

C3353

6852 d TRANSISTOR