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    2SC3710 Search Results

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    Toshiba America Electronic Components 2SC3710A-Y(F)

    Trans GP BJT NPN 80V 12A 3-Pin(3+Tab) TO-220NIS
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    2SC3710 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC3710 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3710 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3710 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3710 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3710 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3710 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SC3710 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SC3710 Toshiba NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING APPLICATIONS) Scan PDF
    2SC3710 Toshiba Toshiba Shortform Catalog Scan PDF
    2SC3710A Toshiba Silicon NPN epitaxial type transistor for high current switching applications Scan PDF
    2SC3710A Toshiba TRANSISTOR SILICON NPN EPITAXIAL TYPE(PCT PROCESS) Scan PDF
    2SC3710AO Toshiba Silicon NPN Epitaxial Type Transistor Scan PDF
    2SC3710AY Toshiba Silicon NPN Epitaxial Type Transistor Scan PDF
    2SC3710A-YF Toshiba 2SC3710A - Trans GP BJT NPN 80V 12A 3-Pin(3+Tab) TO-220NIS Original PDF
    2SC3710-O Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3710-Y Unknown Transistor Shortform Datasheet & Cross References Scan PDF

    2SC3710 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c3710a

    Abstract: 2SC3710A C371 2SA1452A
    Text: 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3710A High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1452A


    Original     		PDF 2SC3710A 2SA1452A c3710a 2SC3710A C371 2SA1452A

    Untitled

    Abstract: No abstract text available
    Text: 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3710A High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1452A


    Original     		PDF 2SC3710A 2SA1452A 2-10R1A

    2SA1452

    Abstract: 2SC3710
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1452 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.4V(Max)@IC= -6A ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SC3710 APPLICATIONS


    Original     		PDF 2SA1452 2SC3710 2SA1452 2SC3710

    2SC371

    Abstract: high hfe transistor 2SA1452 2SC3710
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1452 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.4V(Max)@IC= -6A ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SC3710 APPLICATIONS


    Original     		PDF 2SA1452 2SC3710 2SC371 high hfe transistor 2SA1452 2SC3710

    Untitled

    Abstract: No abstract text available
    Text: 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3710A High-Power Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 s (typ.) • Complementary to 2SA1452A


    Original     		PDF 2SC3710A 2SA1452A 2-10R1A

    2SC371

    Abstract: 2SA1452 2SC3710
    Text: Power Transistors www.jmnic.com 2SC3710 Silicon NPN Transistors Features BCE ﹒With TO-220Fa package ﹒Complement to type 2SA1452 ﹒Hihg current switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT V VCBO Collector to base voltage


    Original     		PDF 2SC3710 O-220Fa 2SA1452 O-220Fa 2SC371 2SA1452 2SC3710

    2SA1452

    Abstract: 2SC3710 2SC371
    Text: JMnic Product Specification 2SA1452 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・High speed switching time ・Complement to type 2SC3710 APPLICATIONS ・High current switching applications PINNING


    Original     		PDF 2SA1452 O-220Fa 2SC3710 2SA1452 2SC3710 2SC371

    C3710A

    Abstract: 2SA1452A 2SC3710A
    Text: 2SC3710A シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3710A 通 信 工 業 用 ○ 大電力スイッチング用 • 単位: mm コレクタ飽和電圧が低い。: VCE (sat) = 0.4 V (最大) (IC = 6 A) • スイッチング時間が速い。: tstg = 1.0 s (標準)


    Original     		PDF 2SC3710A 2SA1452A 2-10R1A C3710A 2SA1452A 2SC3710A

    2SC3710

    Abstract: NPN 80V 3A 2SA1452
    Text: SavantIC Semiconductor Product Specification 2SC3710 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SA1452 ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications


    Original     		PDF 2SC3710 O-220Fa 2SA1452 O-220Fa) VCCB30V 2SC3710 NPN 80V 3A 2SA1452

    2SA1452

    Abstract: 2sa145 2SC3710
    Text: SavantIC Semiconductor Product Specification 2SA1452 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·High speed switching time ·Complement to type 2SC3710 APPLICATIONS ·High current switching applications


    Original     		PDF 2SA1452 O-220Fa 2SC3710 2SA1452 2sa145 2SC3710

    2SC3710

    Abstract: 2SC371 2SA1452 2SC371-0
    Text: Inchange Semiconductor Product Specification 2SC3710 Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・Complement to type 2SA1452 ・Low collector saturation voltage ・High speed switching time APPLICATIONS ・High current switching applications


    Original     		PDF 2SC3710 O-220Fa 2SA1452 O-220Fa) VCC30V 2SC3710 2SC371 2SA1452 2SC371-0

    c3710a

    Abstract: 2SA1452A 2SC3710A
    Text: 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3710A High-Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 s (typ.) • Complementary to 2SA1452A


    Original     		PDF 2SC3710A 2SA1452A c3710a 2SA1452A 2SC3710A

    A1452A

    Abstract: 2SA1452A 2SC3710A
    Text: 2SA1452A 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1452A ○ 大電流スイッチング用 • 単位: mm コレクタ飽和電圧が低い。: VCE (sat) = −0.4 V (最大) (IC = −6 A) • スイッチング時間が速い。: tstg = 1.0 s (標準)


    Original     		PDF 2SA1452A 2SC3710A 2-10R1A 20070701-JA A1452A 2SA1452A 2SC3710A

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SC3710 HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm FEATURES: . Low Collector Saturation Voltage : VcE sat ~°-4V(Max.) 0 3.2 ±0.2 (at Ic=6A) . High Speed Switching Time : tstg= l.Ous(Typ.) Zli . Complementary to 2SA1452


    OCR Scan     		PDF 2SC3710 2SA1452 20/is

    f 4558

    Abstract: 4558 fa 4558 2SC4588 4558, 4556 2SD2076 4558 nec 2SC4420 NEC 4559 2SC3425
    Text: - m € Type No. € tt Manuf. 2SC 4548 / 2SC 4549 > H # o m. p B $ B S B 8 2SC 4550 2SC 4551 2SC 4552 H # SANYO *£ M TOSHIBA 2SD127D 2SD1271 2SC3748 2SC3709 2SÜ2151 2SC3710 2SD1964 2SD1947 2SD1271 2SC 4555 = 2SC 4556 1 t'y'T'y 2SC4162 2SC3626 y -ytry 2SC4459


    OCR Scan     		PDF 2SC3075 2SC3748 2SD1408 2SD1270 2SC4596 2SC3747 2SD1411 2SD1271 2SC3709 f 4558 4558 fa 4558 2SC4588 4558, 4556 2SD2076 4558 nec 2SC4420 NEC 4559 2SC3425

    2SA1452A

    Abstract: 2SC3710A
    Text: 2SC3710A TO SHIBA 2SC3710A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS • • Low Collector Saturation Voltage : V qe (sat)= 0.4V (Max.) High Speed Switching Time : tstg=1.0/¿s (Typ.) Complementary to 2SA1452A


    OCR Scan     		PDF 2SC3710A 2SA1452A 2SA1452A 2SC3710A

    10f150

    Abstract: 2SA1452A 2SC3710A
    Text: TO SH IBA 2SC3710A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3710A HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm • Low Collector Saturation Voltage : V^g 0.4V (Max.) • High Speed Switching Time : tgtg^l.O/^s (Typ.)


    OCR Scan     		PDF 2SC3710A 2SA1452A 10f150 2SA1452A 2SC3710A

    IC 555 working

    Abstract: 2SA1452A 2SC3710A
    Text: T O S H IB A 2SC3710A T O S H IB A TRA N SISTO R SILICON NPN E PIT A X IA L T Y PE PCT PROCESS 2SC3710A HIGH C U RREN T SW ITC H IN G A PPLIC A TIO N S IN D U S T R IA L A P P L IC A T IO N S U n it in m m L ow C ollector S a tu r a tio n V o lta g e : Vç!E (sa t) —0 .4 V (M ax.)


    OCR Scan     		PDF 2SC3710A 2SA1452A IC 555 working 2SA1452A 2SC3710A

    2SC3710

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3710 HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in non FEATURES: 10.3 MAX . Low Collector Saturation Voltage : VcE(sat)= 0.4V(Max.) . High Speed Switching Time (at Ic=6A) : ts tg*l •0<js (Typ.)


    OCR Scan     		PDF 2SC3710 2SA1452 2SC3710

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3710A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3710A HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm Low Collector Saturation Voltage : V q e (sat)= 0-4V (Max.) • High Speed Switching Time : tstg = 1 .0 (us (Typ.)


    OCR Scan     		PDF 2SC3710A 2SA1452A

    Untitled

    Abstract: No abstract text available
    Text: 2SC3710A TOSHIBA 2 S C 3 7 1QA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS • • INDUSTRIAL APPLICATIONS Low Collector Saturation Voltage : (sat) = 0.4V (Max.) High Speed Switching Time : tstg=1.0//s (Typ.)


    OCR Scan     		PDF 2SC3710A 2SA1452A

    2SC3710A

    Abstract: 2SA1452A
    Text: TO SH IBA 2SC3710A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3710A HIGH CURRENT SWITCHING APPLICATIONS Unit in mm • Low Collector Saturation Voltage : V^g 0.4V (Max.) • High Speed Switching Time : tgtg^l.O/^s (Typ.) • Complementary to 2SA1452A


    OCR Scan     		PDF 2SC3710A 2SA1452A 2SC3710A 2SA1452A

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


    OCR Scan     		PDF O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346