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    2SC452 Price and Stock

    Rochester Electronics LLC 2SC4523S-E

    NPN EPITAXIAL PLANAR SILICON
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    DigiKey 2SC4523S-E Bulk 392
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    Rochester Electronics LLC 2SC4520S-TD-E

    BIP NPN 1.5A 45V
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    DigiKey 2SC4520S-TD-E Bulk 1,402
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    Rochester Electronics LLC 2SC4520T-TD-E

    BIP NPN 1.5A 45V
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    DigiKey 2SC4520T-TD-E Bulk 987
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    Rochester Electronics LLC 2SC4521S-TD-E

    BIP NPN 3A 45V
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    DigiKey 2SC4521S-TD-E Bulk 1,480
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    Rochester Electronics LLC 2SC4521T-TD-E

    NPN EPITAXIAL PLANAR SILICON
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    DigiKey 2SC4521T-TD-E Bulk 1,480
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    Find more 2SC452 price and stock on Findchips.com

    2SC452 Datasheets (89)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC452 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC452 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC452 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC452 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC452 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC452 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC452 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SC452 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC4520 Kexin NPN Epitaxial Planar Silicon Transistor Original PDF
    2SC4520 Sanyo Semiconductor NPN Epitaxial Planar Silicon Transistor Original PDF
    2SC4520 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC4520 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC4520 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC4520 Sanyo Semiconductor PCP Type Transistors, XP5 / XP6 Type Transistors Scan PDF
    2SC4520 Sanyo Semiconductor HIGH-SPEED SWITCHING APPLICATIONS (Small Signal Transistors) Scan PDF
    2SC4520 Sanyo Semiconductor Small Signal Transistors for High Speed Switching Scan PDF
    2SC4520R Sanyo Semiconductor NPN Epitaxial Planar Silicon Transistors, High-Speed Switching Applications Original PDF
    2SC4520R Sanyo Semiconductor NPN Epitaxial Planar Silicon Transistor for High Speed Switching Scan PDF
    2SC4520S Sanyo Semiconductor NPN Epitaxial Planar Silicon Transistors, High-Speed Switching Applications Original PDF
    2SC4520S Sanyo Semiconductor NPN Epitaxial Planar Silicon Transistor for High Speed Switching Scan PDF

    2SC452 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC4523

    Abstract: 8A400
    Text: Transistors SMD Type High-Speed Switching Applications 2SC4523 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Large current capacity. Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 3 .8 0 +0.15 5.55 -0.15 0.127 max


    Original     		PDF 2SC4523 O-252 500mA 200mA 2SC4523 8A400

    2SC4522

    Abstract: No abstract text available
    Text: Transistors SMD Type High-Speed Switching Applications 2SC4522 TO-252 Features 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Large current capacity. Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 0.127 max 3 .8 0 +0.25 2.65 -0.1


    Original     		PDF 2SC4522 O-252 500mA 125mA 2SC4522

    2SC4520

    Abstract: ITR07159 ITR07160 2SC452
    Text: 2SC4520 Ordering number : EN3139A SANYO Semiconductors DATA SHEET 2SC4520 NPN Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.


    Original     		PDF 2SC4520 EN3139A 2SC4520 ITR07159 ITR07160 2SC452

    Untitled

    Abstract: No abstract text available
    Text: 2SC4520 Ordering number : EN3139A SANYO Semiconductors DATA SHEET 2SC4520 NPN Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.


    Original     		PDF 2SC4520 EN3139A 250mm2â

    2SC4520

    Abstract: No abstract text available
    Text: Ordering number:EN3139 NPN Epitaxial Planar Silicon Transistors 2SC4520 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET, MBIT process. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed.


    Original     		PDF EN3139 2SC4520 2SC4520] 25max 2SC4520

    ITR07161

    Abstract: ITR07162 2SC4520 ITR07159 ITR07160
    Text: Ordering number:ENN3139 NPN Epitaxial Planar Silicon Transistors 2SC4520 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET, MBIT process. · Large current capacity. · Low collector-to-emitter saturation voltage. · High-speed switching.


    Original     		PDF ENN3139 2SC4520 2SC4520] 25max ITR07161 ITR07162 2SC4520 ITR07159 ITR07160

    SMD TRANSISTOR MARKING BR

    Abstract: SMD TRANSISTOR BR 2SC4520 MARKING SMD NPN TRANSISTOR BR CK marking SMD ic Package SMD NPN TRANSISTOR BR
    Text: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4520 Features Adoption of FBET, MBIT process. Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed. Small-sized package. Absolute Maximum Ratings Ta = 25 Parameter


    Original     		PDF 2SC4520 SMD TRANSISTOR MARKING BR SMD TRANSISTOR BR 2SC4520 MARKING SMD NPN TRANSISTOR BR CK marking SMD ic Package SMD NPN TRANSISTOR BR

    2SC4521

    Abstract: ITR07169 ITR07170
    Text: 2SC4521 Ordering number : EN3140B SANYO Semiconductors DATA SHEET 2SC4521 NPN Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.


    Original     		PDF 2SC4521 EN3140B 2SC4521 ITR07169 ITR07170

    2044B

    Abstract: 2SC4522
    Text: Ordering number:EN3141A NPN Epitaxial Planar Silicon Transistors 2SC4522 High-Speed Switching Applications • Adoption of FBET, MBIT process. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed. Package Dimensions


    Original     		PDF EN3141A 2SC4522 2045B 2SC4522] 2044B 2044B 2SC4522

    ITS 31422

    Abstract: 2044B 2SC4523
    Text: Ordering num ber: EN 3142A N0.3142A 2SC4523 NPN Epitaxial Planar Silicon Transistor i High-Speed Switching Applications Features . Adoption ofFBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • Fast switching speed


    OCR Scan     		PDF 45ViIe ITS 31422 2044B 2SC4523

    2SC4520

    Abstract: No abstract text available
    Text: Ordering number: EN 3139 2SC4520 No.3139 i SANTO NPN E pitaxial P la n ar Silicon T ransistor i High-Speed Switching Applications F e a tu r e s . Adoption ofFB ET, MBIT processes • Large cu rre n t capacity • Low collector-to-em itter saturation voltage


    OCR Scan     		PDF 2SC4520 250mm2

    2SC4525

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4525 NPN EPITAXIAL PLANAR TYPE D IS C R E T IO N 2SC4525 is a silicon NPN epitaxial planar type transistor specifically designed fo r RF power amplifiers applications in 1,65GHz. FEATURES • High power gain: Gpb ^ 6.0dB, P0 = 20W


    OCR Scan     		PDF 2SC4525 65GHz. 65GHz X-139

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4524 NPN EPITAXIAL PLANAR T Y P E D IS C R IP T IO N O U T L IN E D R A W IN G 2 S C 4 5 2 4 is a silicon N P N epitaxial planar type transistor specifically designed for R F power amplifiers applications Dimensions in mm


    OCR Scan     		PDF 2SC4524 65GHz.

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4526 NPN EPITAXIAL PLANAR T Y P E D IS C R IP T IO N O U T L IN E D R A W IN G 2 S C 4 5 2 6 is a silicon N P N epitaxial planar type transistor specifically designed for R F power amplifier applications in Dimensions in mm


    OCR Scan     		PDF 2SC4526

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4525 NPN EPITAXIAL PLANAR T Y P E D IS C R E T IO N 2 S C 45 2 5 is a silicon N P N epitaxial planar type transistor sp e cifica lly designed fo r R F power am plifiers applications in 1 .65 G H z. FEATURES • High power gain: G p b ^ 6.0dB , P0 = 20W


    OCR Scan     		PDF 2SC4525

    2sc4525

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4525 NPN EPITAXIAL PLANAR TYPE D IS C R E T IO N 2 S C 4 5 2 5 is a silicon N P N epitaxial planar type transistor specifically designed for R F power amplifiers applications in 1.65G H z. FEATURES • • High power gain: G p b ^ 6.0dB, P0 = 2 0W


    OCR Scan     		PDF 2SC4525 2SC4525

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4527 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE <;r d i M T * j V 7 « Unit in mm TV TUNER, UHF OSCILLATOR APPLICATIONS. COMMON BASE TV TUNER, UHF CONVERTER APPLICATIONS. (COMMON BASE) • Transition Freauencv is Hi eh and Dependent. on Current


    OCR Scan     		PDF 2SC4527 2SC4246.

    Untitled

    Abstract: No abstract text available
    Text: Ordering num ber: EN 3141A 2SC4522 No.314lA NPN E pitaxial P lan ar Silicon T ransisto r High-Speed Switching Applications Features . Adoption of FBET, MBIT processes • Large cu rren t capacity • Low collector-to-em itter satu ratio n voltage • F ast sw itching speed


    OCR Scan     		PDF 314lA 2SC4522 2045B 7130M H/7059M

    Untitled

    Abstract: No abstract text available
    Text: 2SC4527 SILICQN NPN EPITAXIAL P LA N A R T Y P E TR A N SIS T O R U nit in mm TV TUNER, UHF OSCILLATOR APPLICATIONS. COMMON BASE TV TUNER, UHF CONVERTER APPLICATIONS. (COMMON BASE) • • Transition Frequency is High and Dependent on C urrent Excellently.


    OCR Scan     		PDF 2SC4527 2SC4246. 100MI

    2SC4528

    Abstract: 111j DARLINGTON 5A 1500V
    Text: Power Transistors 2SC4528 2SC4528 P a c k a g e D im e n s io n s U n it ! mm S ilicon NPN Triple-D iffused Planar D arlington Type 5 .3 m a x . 2 0 .5 m a x . 3.0- H ig h P o w e r S w itch in g I* • F e a tu re s • H ig h s p e e d s w itc h in g • H ig h c o lle c to r - b a s e v o lta g e V cbo


    OCR Scan     		PDF 2SC4528 100mA -25-C lB-10 10Ibi 111-J 2SC4528 111j DARLINGTON 5A 1500V

    2SC4528

    Abstract: DARLINGTON 5A 1500V 100X2
    Text: Pow er T ransistors 2SC4528 2SC4528 Package Dim ensions U n it ! mm Silicon NPN Triple-Diffused Planar Darlington Type 5 .3 m a x . 2 0 .5 m a x . 3 .0 High Power S w itching • Features y • H igh sp e e d sw itch in g • H igh c o lle c to r-b a s e v o ltag e


    OCR Scan     		PDF 2SC4528 bT32fi52 100X2â 100x2mm 2SC4528 DARLINGTON 5A 1500V 100X2

    pa 2030a

    Abstract: 2SC4520 QGQ711G K 2038
    Text: SANYO SE MI COND UC TO R CORP 2SC4520 7*H707b Q0Q711G 1 22E D T ~ 3 5 ~ n % NPN Epitaxial Planar Silicon Transistor 2038 High-Speed Switching Applications 3I39 F ea tu res . Adoption o f FBET, MBIT processes • Large current capacity •Low collector-to-emitter saturation voltage


    OCR Scan     		PDF n707fe, QGQ711G 2SC4520 250mm2 pa 2030a K 2038

    3000T

    Abstract: 2SC4246 2SC4527
    Text: TOSHIBA 2SC4527 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4527 Unit in mm TV TUNER, UHF OSCILLATOR APPLICATIONS C O M M O N BASE TV TUNER, UHF CONVERTER APPLICATIONS (C O M M O N BASE) 2.1 ± 0.1 1.25 ±0.1 • Transition Frequency is High and Dependent on Current


    OCR Scan     		PDF 2SC4527 2SC4246. 3000T 2SC4246 2SC4527

    2SC5072

    Abstract: 2SC4698 4685 4686 2SC470-3 2SC4703 4670K 2SC4001 2SC4176 2SC4443
    Text: - 196 - m s T y p e No. 2 SC 4666 tt « Manuf. J z B m SANYO TOSHIBA K S. 2SC 4667 Ä S. 2SC4443 2SC 4668 S tB ä 2SC4523 2SD1412 » S tc 2SC4406 2SC4250 2SC 4669 > fö T 2SC 4670 2SC 4671 / = 2SC 4672 □— A = 2SC 4674 B 4 "" # 2SC 4678 ÜL S. 2SC 4679


    OCR Scan     		PDF 2SC4181 2SD1823 2SD2351 2SC4443 2SC4176 2SD1977 2SC4700 2SC4523 2SD1412 2SD1747 2SC5072 2SC4698 4685 4686 2SC470-3 2SC4703 4670K 2SC4001 2SC4176 2SC4443