Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SC526 Search Results

    SF Impression Pixel

    2SC526 Price and Stock

    onsemi 2SC5265LS-1HX

    TRANSISTOR RF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SC5265LS-1HX Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Rochester Electronics 2SC5265LS-1HX 1,287 1
    • 1 $0.8883
    • 10 $0.8883
    • 100 $0.835
    • 1000 $0.7551
    • 10000 $0.7551
    		Buy Now

    Rochester Electronics LLC 2SC5265LS-1HX

    2SC5265 - NPN TRIPLE DIFFUSED PL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SC5265LS-1HX Bulk 325
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.92
    • 10000 $0.92
    		Buy Now

    onsemi 2SC5265LS

    2SC5265 - NPN Triple Diffused Planar Silicon Transistor Inverter-Controlled Lighting '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SC5265LS 4 1
    • 1 $0.8883
    • 10 $0.8883
    • 100 $0.835
    • 1000 $0.7551
    • 10000 $0.7551
    		Buy Now

    2SC526 Datasheets (57)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC526 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC526 Micro Electronics Semiconductor Device Data Book Scan PDF
    2SC526 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC526 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC526 Unknown Cross Reference Datasheet Scan PDF
    2SC526 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC526 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC526 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC526 Unknown Vintage Transistor Datasheets Scan PDF
    2SC526 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC526 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC526 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC5260 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5260 Unknown NPN Transistor Scan PDF
    2SC5260 Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
    2SC5260 Toshiba NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) Scan PDF
    2SC5260-O Toshiba TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF
    2SC5260-R Toshiba TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF
    2SC5261 Unknown NPN Transistor Scan PDF
    2SC5261 Unknown Japanese Transistor Cross References (2S) Scan PDF

    2SC526 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    d 5287

    Abstract: 2SC5264
    Text: Ordering number:ENN5287 NPN Triple Diffused Planar Silicon Transistor 2SC5264 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process. unit:mm


    Original     		ENN5287 2SC5264 2079C 2SC5264] O-220FI-LS 10Ltd. d 5287 2SC5264 PDF

    2SC5266A

    Abstract: No abstract text available
    Text: 2SC5266A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5266A Switching Regulator Applications High-Voltage Switching Applications Unit: mm DC-DC Converter Applications • Excellent switching times: tr = 0.5 µs max , tf = 0.3 µs (max) • High breakdown voltage: VCEO = 400 V


    Original     		2SC5266A 2SC5266A PDF

    2SC5265

    Abstract: EN5321 VCBO-1200V
    Text: Ordering number:EN5321 NPN Triple Diffused Planar Silicon Transistor 2SC5265 Inverter-controlled Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1200V . · High reliability (Adoption of HVP process). · Adoption of MBIT process.


    Original     		EN5321 2SC5265 2079B 2SC5265] O-220FI 2SC5265 EN5321 VCBO-1200V PDF

    2SC5264

    Abstract: 2SC5264LS 2079d
    Text: Ordering number:ENN5287A NPN Triple Diffused Planar Silicon Transistor 2SC5264LS Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process.


    Original     		ENN5287A 2SC5264LS 2079D 2SC5264] O-220FI 2SC5264 2SC5264LS 2079d PDF

    TA-3430

    Abstract: 2SC5265LS ITR08008 ITR08009 ITR08010 ITR08011 ITR08012 ITR08013
    Text: Ordering number : ENN5321A 2SC5265LS NPN Triple Diffused Planar Silicon Transistor 2SC5265LS Inverter-Controlled Lighting Applications Features • • • Package Dimensions High breakdown voltage VCBO=1200V . High reliability(Adoption of HVP process). Adoption of MBIT process.


    Original     		ENN5321A 2SC5265LS 2079D 2SC5265LS] O-220FI TA-3430 2SC5265LS ITR08008 ITR08009 ITR08010 ITR08011 ITR08012 ITR08013 PDF

    2SC5260

    Abstract: OS63
    Text: TOSHIBA 2SC5260 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5260 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.7dB f=2GHz • High Gain : Gain = 8.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC


    OCR Scan     		2SC5260 Weig84 2SC5260 OS63 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5260 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5260 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • Low Noise Figure : NF = 1.7dB f=2GHz • High Gain : Gain = 8.5dB (f = 2GHz) M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC


    OCR Scan     		2SC5260 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5261F TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5261F VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.7dB f=2GHz • High Gain : |S 2i el2= 9-5dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C) SYMBOL


    OCR Scan     		2SC5261F PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5260 2SC5260 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f=2GHz : Gain = 8.5dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		2SC5260 PDF

    2SC5266

    Abstract: 2SC5266A
    Text: TOSHIBA 2SC5266A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5266A Unit in mm SWITCHING REGULATOR APPLICATIONS 10 ± 0.2 HIGH VOLTAGE SWITCHING APPLICATIONS 1 01.2 DC-DC CONVERTER APPLICATIONS • • • Excellent Switching Times : tr = 0.5/^s Max. , tf= 0.3/^s (Max.)


    OCR Scan     		2SC5266A 2SC5266 2SC5266A PDF

    2SC5261

    Abstract: No abstract text available
    Text: TO SH IBA 2SC5261 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5261 Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f = 2GHz : Gain = 8.5dB (f = 2GHz) 1.6 ± 0.2 ,0.8 ± 0 . 1, r— :— 1


    OCR Scan     		2SC5261 2SC5261 PDF

    2SC5262

    Abstract: No abstract text available
    Text: TO SH IBA 2SC5262 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5262 VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • : NF = 1.7dB f = 2GHz : Gain = lld B (f = 2GHz) Low Noise Figure High Gain m a v ì m i im RATiM r;« ; SYMBOL VCBO v CEO


    OCR Scan     		2SC5262 2SC5262 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5266A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5266A SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS • • • Excellent Switching Times : ^ = 0.5^$ Max. , tf=0.3,«s (Max.) High Collector Breakdown Voltage : V qj]q = 400V


    OCR Scan     		2SC5266A PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5263 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5263 Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS 2.1 ± 0.1 • • Low Noise Figure High Gain . 1.25 ± 0-1 : NF = 1.7dB f=2GHz : Gain = lldB (f = 2GHz) ri 2 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		2SC5263 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5263 T O SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5263 V H F -U H F B A N D LOW NOISE AM PLIFIER APPLICATIONS Low Noise Figure : NF = 1.7dB f=2GHz High Gain : Gain = lld B (f= 2 G H z ) M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC


    OCR Scan     		2SC5263 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5261 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5261 Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f=2GHz : Gain = 8.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		2SC5261 S21el PDF

    2SC5261FT

    Abstract: No abstract text available
    Text: 2SC5261FT TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5261FT V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f = 2GHz : |S2iel2—9.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		2SC5261FT 002ise 2SC5261FT PDF

    transistor marking c3n

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5262 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5262 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Low Noise Figure : N F = 1.7dB f=2G H z H igh Gain : Gain = lld B (f= 2 G H z ) MAXIMUM RATINGS (Ta = 25°C) SYM BOL CHARACTERISTIC


    OCR Scan     		2SC5262 transistor marking c3n PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SC5261 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5261 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f=2GHz : Gain = 8.5dB (f = 2GHz) M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		2SC5261 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5262 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5262 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm + 0.2 2.9 - 0.3 • • 1 : NF = 1.7dB f=2GHz Low Noise Figure High Gain -H 1 : Gain = lld B (f = 2GHz) 2 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		2SC5262 PDF

    2SC5262

    Abstract: No abstract text available
    Text: TO SH IBA 2SC5262 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5262 VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • : NF = 1.7dB f = 2GHz : Gain = lld B (f = 2GHz) Low Noise Figure High Gain m a v ì m i im RATiM r;« ; SYMBOL VCBO v CEO


    OCR Scan     		2SC5262 2SC5262 PDF

    VHF-UHF Band Low Noise Amplifier

    Abstract: 2SC5263
    Text: TOSHIBA 2SC5263 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5263 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f = 2GHz : Gain = lldB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		2SC5263 VHF-UHF Band Low Noise Amplifier 2SC5263 PDF

    2SC5262

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5262 TO SH IBA TRANSISTO R SILICON NPN EPITAXIAL PLAN AR TYPE 2SC5262 Unit in mm V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIO NS + 0.2 • • 2.9-0.3 : NF = 1.7dB f = 2GHz : Gain = lldB (f = 2GHz) Low Noise Figure High Gain -e M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		2SC5262 2SC5262 PDF

    EN5321

    Abstract: 2SC5265 2SC526 TA064 p60e
    Text: Ordering number: EN5321 SAMYO No.5321 _ 2SC5265 i NPN Triple Diffused Planar Silicon Transistor Inverter-controlled Lighting Applications Features •High breakdown voltage Vcbo - 1200V . • High reliability (Adoption of HVP process).


    OCR Scan     		EN5321 2SC5265 EN5321 2SC5265 2SC526 TA064 p60e PDF