Untitled
Abstract: No abstract text available
Text: 2SC5355 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5355 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications Unit: mm • Excellent switching times: tr = 0.5 s max , tf = 0.3 μs (max) • High collector breakdown voltage: VCEO = 400 V
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2SC5355
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Untitled
Abstract: No abstract text available
Text: 2SC5355 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5355 High Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • Excellent switching times: tr = 0.5 µs max , tf = 0.3 µs (max) • High collector breakdown voltage: VCEO = 400 V
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2SC5355
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C5355
Abstract: 2SC5355
Text: 2SC5355 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5355 High Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • Excellent switching times: tr = 0.5 µs max , tf = 0.3 µs (max) • High collector breakdown voltage: VCEO = 400 V
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2SC5355
C5355
2SC5355
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C5355
Abstract: 2SC5355 C53-55 smd marking TF
Text: Transistors SMD Type Silicon NPN Triple Diffused Mesa Type 2SC5355 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Features 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 0.127 max 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 +0.25
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2SC5355
O-252
400current
C5355
C5355
2SC5355
C53-55
smd marking TF
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C5355
Abstract: 2SC535 2SC5355
Text: 2SC5355 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5355 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications Unit: mm • Excellent switching times: tr = 0.5 µs max , tf = 0.3 µs (max) · High collector breakdown voltage: VCEO = 400 V
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2SC5355
C5355
2SC535
2SC5355
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C5355
Abstract: 2SC5355
Text: 2SC5355 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5355 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications Unit: mm • Excellent switching times: tr = 0.5 µs max , tf = 0.3 µs (max) • High collector breakdown voltage: VCEO = 400 V
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2SC5355
C5355
2SC5355
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Untitled
Abstract: No abstract text available
Text: Transistors SMD Type Product specification 2SC5355 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Features 2.3 +0.1 0.60-0.1 0.127 max 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 +0.25 2.65 -0.1 High DC current gain: hFE = 20 min
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2SC5355
O-252
C5355
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Untitled
Abstract: No abstract text available
Text: 2SC5355 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5355 High Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • Excellent switching times: tr = 0.5 µs max , tf = 0.3 µs (max) • High collector breakdown voltage: VCEO = 400 V
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2SC5355
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Untitled
Abstract: No abstract text available
Text: 2SC5355 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5355 High Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • Excellent switching times: tr = 0.5 µs max , tf = 0.3 µs (max) • High collector breakdown voltage: VCEO = 400 V
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2SC5355
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IGBT GT30F124
Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ
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SCJ0004R
SC-43)
2SC1815
2SC732TM
2SC1959
2SA1015
2SC2240
2SA970
2SC1815
2SA1015
IGBT GT30F124
IGBT GT30J124
GT30F124
GT30J124
GT50N322
tk25e06k3
TPCP8R01
TK12A10K3
GT30G124
2SK3075
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smd transistor h2a
Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output
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BCE0016C
E-28831
BCE0016D
smd transistor h2a
SMD TRANSISTOR H2A NPN
transistor smd H2A
2sa1943 amplifier circuit diagram
TPCP8L01
2sC5200, 2SA1943
H2A transistor SMD
2sc5200 power amplifiers diagram
MARKING SMD PNP TRANSISTOR h2a
SMD H2A
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transistor compatible 2SK3569
Abstract: TK12A65D 2SK3569 equivalent tk6a65d equivalent TB-7005 TPCA8019-H TPCA8023-H tk10a60d equivalent TPCA8030-H p 181 Photocoupler
Text: 2009-3 SYSTEM CATALOG Semiconductors for Power Supplies SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng AC-Input Switching Power Supply Circuits and Recommended New Product Series ● Secondary rectifier 1. Ultra-high-speed N-channel trench MOSFET U-MOSIII-H Series
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TLP285/TLP781)
TB6818FG/TB6819FG)
SCE0024B
SCE0024C
transistor compatible 2SK3569
TK12A65D
2SK3569 equivalent
tk6a65d equivalent
TB-7005
TPCA8019-H
TPCA8023-H
tk10a60d equivalent
TPCA8030-H
p 181 Photocoupler
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GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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2010/9SCE0004K
SC-43)
2SC1815
700the
GT30F124
TPCP8R01
GT30J124
JAPANESE 2SC TRANSISTOR 2010
smd transistor h2a
smd marking 8L01
tk25e06k3
GT45F122
gt30g124
GT30F123
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transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
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SC-43)
2SC1815
TPS615
TPS616
TPS610
transistor bc 245
247Y
smd transistor h2a
gt30g122
gt35j321
GT45F123
MARKING SMD PNP TRANSISTOR h2a
GT45F122
GT45f122 Series
gt30f122
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transistor 2sc5353
Abstract: 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA
Text: Bipolar Power Transistor Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540001_02 1/29 Application Application Map Map of of Low Low VCE sat VCE(sat) BJT BJT Process Standard Standard Feature High hFE Hi-Met 3rd NPN 400 to 1000
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DP0540001
200kHz
200kHz
280ns
transistor 2sc5353
2sa2035
TRANSISTOR SMD 13W
HA2003
Bjt 60 w 600v .5A
pnp transistor 800v
TPC6D02
VS6 SOT23
400V dvc to 5V DC Regulator
MSTM TOSHIBA
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2SA1930 2sc5171
Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228
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SC-63/64)
SC-62)
SC-59
OT-23
2SA1483
2SC3803
2SA1426
2SA1204
2SA1734
2SA2065
2SA1930 2sc5171
tpc8107 equivalent
TPC8107 application circuit
2SC4157 equivalent
2sa1930 transistor equivalent
2SA949 equivalent
2sd880 equivalent
equivalent 2SC5200
2SK2865 Equivalent
marking 4d npn
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SC5355 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC 5355 SWITCHING REGULATOR APPLICATIONS HIGH VO LTAGE SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS • • • Excellent Switching Times : tf = 0.5 /us Max. , tf = 0.3 /us (Max.)
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2SC5355
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2SC5355
Abstract: No abstract text available
Text: TOSHIBA 2SC5355 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5355 Unit in mm SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS • • • Excellent Switching Times : tr = 0.5 jus Max. , tf = 0.3 jus (Max.)
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2SC5355
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5355 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED M ESA TYPE 2SC5355 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS 6.8MAX. A 5.2 ±0.2 DC-DC CONVERTER APPLICATIONS j. J i^ H Excellent Switching Times ;. 2.0MAX. SWITCHING REGULATOR APPLICATIONS
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2SC5355
95MAX,
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Untitled
Abstract: No abstract text available
Text: TO SH IBA 2SC5355 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5355 Unit in mm SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS 6.8MAX., • ; j. lj> c . . — Ua .U /¿ S /tv /t \ j. \ ± V l.iX 2 L .}9 I f rl u °-6±0-15
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2SC5355
95IV1AX.
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2SC5355
Abstract: No abstract text available
Text: TOSHIBA 2SC5355 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5355 Unit in mm SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS 6.8MAX., • ; A. — u .u /¿ s A C . . - / TV/ r \ { iv ia x .j, rl u 0.95IV1AX. i f — u .o /¿ s
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2SC5355
2SC5355
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5355 TOSHfBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5355 SWITCHING REGULATOR APPLICATIONS Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS • Excellent Switching Times : t,.=0.5/<s Max. , tf=0.3/«s (Max.)
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2SC5355
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2SC5355
Abstract: DC DC converter 5v to 200V ic
Text: TO SH IBA 2SC5355 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5355 Unit in mm SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS 6.8MAX., • j. a c . . - /tv /t \ j. -+t- rl u °-6±0-15 Excellent Switching Times . 0.6M AX.
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2SC5355
2SC5355
DC DC converter 5v to 200V ic
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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