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Rochester Electronics LLC 2SC5435-T1-A SMALL SIGNAL BIPOLAR TRANSTR NPN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SC5435-T1-A	Bulk	167,990		1,623	1 - 10 - 100 - 1000 - 10000 $0.18	Buy Now
Renesas Electronics Corporation 2SC5435-T1-A 2SC5435 - RF Small Signal Bipolar Transistor, 0.03A, NPN '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	2SC5435-T1-A		167,990		1	1 $0.1778 10 $0.1778 100 $0.1671 1000 $0.1511 10000 $0.1511	Buy Now

2SC5435 Datasheets (7)

Part	Manufacturer	Description	Datasheet Type	PDF
2SC5435	NEC	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYP	Original	PDF
2SC5435	NEC	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION	Original	PDF
2SC5435	NEC	Semiconductor Selection Guide	Original	PDF
2SC5435	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SC5435EB-T1	NEC	NPN Epitaxial Silicon Transistor for High-frequency Low-noise Amplification Flat-lead 3-pin Thin-type Ultra Super Minimold	Original	PDF
2SC5435FB	NEC	NPN Epitaxial Silicon Transistor for High-frequency Low-noise Amplification Flat-lead 3-pin Thin-type Ultra Super Minimold	Original	PDF
2SC5435-T1	NEC	Reduced noise high frequency amplification transistor	Original	PDF

2SC5435 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SC5435 Abstract: 2SC5437 NEC 2505 nj Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA836TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5437) Q1: Built-in low noise, high-gain transistor	Original	PDF	PA836TD 2SC5435, 2SC5437) S21e2 2SC5435 2SC5437 2SC5435 2SC5437 NEC 2505 nj
2SC5435 Abstract: 2SC5786 NEC 7815 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA860TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5786) Q1: High-gain transistor	Original	PDF	PA860TC 2SC5435, 2SC5786) S21e2 2SC5435 2SC5786 2SC5435 2SC5786 NEC 7815
2SC5435 Abstract: 2SC5600 IC 14558 5mA25 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA841TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5600) Q1: Built-in high-gain transistor	Original	PDF	PA841TD 2SC5435, 2SC5600) S21e2 2SC5435 2SC5600 2SC5435 2SC5600 IC 14558 5mA25
Untitled Abstract: No abstract text available Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor	Original	PDF	PA862TD 2SC5435, 2SC5800) 2SC5435 2SC5800 P15685EJ1V0DS
2SC5435 Abstract: 2SC5745 0782 K 2564 nec 2401 831 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA854TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5745) Q1: High gain transistor suited for buffer applications	Original	PDF	PA854TC 2SC5435, 2SC5745) S21e2 2SC5435 2SC5745 2SC5435 2SC5745 0782 K 2564 nec 2401 831
2SC5010 Abstract: 2SC5435 2SC5435-T1 marking tk Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5010 • Flat-lead 3-pin thin-type ultra super minimold package	Original	PDF	2SC5435 2SC5010 2SC5435-T1 2SC5010 2SC5435 2SC5435-T1 marking tk
9904 120 13843 Abstract: 2SC5435 2SC5800 nec 4308 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor	Original	PDF	PA862TD 2SC5435, 2SC5800) S21e2 2SC5435 2SC5800 9904 120 13843 2SC5435 2SC5800 nec 4308
k 2059 TRANSISTOR Abstract: UPA850TD 2SC5435 2SC5736 marking VF Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA850TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5736) Q1: High gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz	Original	PDF	PA850TD 2SC5435, 2SC5736) S21e2 2SC5435 2SC5736 k 2059 TRANSISTOR UPA850TD 2SC5435 2SC5736 marking VF
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor	Original	PDF	PA862TS 2SC5435, 2SC5800) S21e2 2SC5435 2SC5800 PU10332EJ01V0DS
2SC5435 Abstract: NESG2107M33 NEC JAPAN IC xf 2 6-pin marking XF UPA867TS Text: DATA SHEET NPN SILICON + SiGe RF TWIN TRANSISTOR µPA867TS NPN SILICON + SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PKG) FEATURES • 2 different built-in transistors (2SC5435, NESG2107M33) Q1: High gain transistor	Original	PDF	PA867TS 2SC5435, NESG2107M33) S21e2 2SC5435 NESG2107M33 2SC5435 NESG2107M33 NEC JAPAN IC xf 2 6-pin marking XF UPA867TS
8205 6-pin Abstract: 2SC5435 2SC5786 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA860TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5786) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz	Original	PDF	PA860TD 2SC5435, 2SC5786) S21e2 2SC5435 2SC5786 8205 6-pin 2SC5435 2SC5786
2SC5435 Abstract: 2SC5600 of ic 3915 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA841TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5600) Q1: High gain transistor suited for buffer applications	Original	PDF	PA841TC 2SC5435, 2SC5600) S21e2 2SC5435 2SC5600 2SC5435 2SC5600 of ic 3915
F 0552 Abstract: PA862T Text: NPN SILICON RF TWIN TRANSISTOR PA862TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz	Original	PDF	PA862TD 2SC5435, 2SC5800) S21e2 2SC5435 2SC5800 P15685EJ1V0DS F 0552 PA862T
2SC5435 Abstract: 2SC5800 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor	Original	PDF	PA862TS 2SC5435, 2SC5800) S21e2 2SC5435 2SC5800 2SC5435 2SC5800

nec japan 7815 Abstract: 2SC5435 2SC5745 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA854TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5745) Q1: High gain transistor suited for buffer applications	Original	PDF	PA854TC 2SC5435, 2SC5745) S21e2 2SC5435 2SC5745 nec japan 7815 2SC5435 2SC5745
417 - 906 Abstract: No abstract text available Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA841TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Flat-lead 6-pin thin-type ultra super minimold package • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5600)	Original	PDF	PA841TC 2SC5435, 2SC5600) S21e2 2SC5435 2SC5600 417 - 906
0443 IC Abstract: 2SC5435 2SC5745 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA854TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5745) Q1: High gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz	Original	PDF	PA854TD 2SC5435, 2SC5745) S21e2 2SC5435 2SC5745 0443 IC 2SC5435 2SC5745
2SC5010 Abstract: 2SC5435 V 8623 transistor marking tk 9418 transistor Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • Ultra super mini-mold thin flat package 1.4 ± 0.05 (1.4 mm x 0.8 mm × 0.59 mm: TYP.) UNIT	Original	PDF	2SC5435 2SC5010 2SC5435 V 8623 transistor marking tk 9418 transistor
Untitled Abstract: No abstract text available Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor	Original	PDF	PA862TS 2SC5435, 2SC5800) 2SC5435 2SC5800 PU10332EJ02V0DS
2SC5435 Abstract: 2SC5437 nec 2401 7248 5E-25 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA836TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5437) Q1: Low phase distortion, high-gain transistor	Original	PDF	PA836TC 2SC5435, 2SC5437) S21e2 2SC5435 2SC5437 2SC5435 2SC5437 nec 2401 7248 5E-25
2SC5736 Abstract: 2SC5435 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA850TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5736) Q1: High gain transistor	Original	PDF	PA850TC 2SC5435, 2SC5736) S21e2 2SC5435 2SC5736 2SC5736 2SC5435
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
NEC 2987 Abstract: transistor NEC B 617 transistor NEC D 822 P TL 1701 9418 transistor TL 431 0323 Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE • PACKAGE DIMENSIONS in mm Ultra super mini-mold thin flat package (1.4 mm x 0.8 mm x 0.59 mm: TYP.) • Contains same chip as 2S C 5010	OCR Scan	PDF	2SC5435 NEC 2987 transistor NEC B 617 transistor NEC D 822 P TL 1701 9418 transistor TL 431 0323
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm FEATURE • Ultra super mini-mold thin flat package 1.4 ±0.05 (1.4 mm x 0.8 mm x 0.59 mm: TYP.) • 0.8 ± 0.1	OCR Scan	PDF	2SC5435 2SC5010

2SC5435 Search Results

2SC5435 Price and Stock

Rochester Electronics LLC 2SC5435-T1-A

Renesas Electronics Corporation 2SC5435-T1-A

2SC5435 Datasheets (7)

2SC5435 Datasheets Context Search

2SC5435

2SC5435

2SC5435

Untitled

2SC5435

2SC5010

9904 120 13843

k 2059 TRANSISTOR

Untitled

2SC5435

8205 6-pin

2SC5435

F 0552

2SC5435

nec japan 7815

417 - 906

0443 IC

2SC5010

Untitled

2SC5435

2SC5736

Untitled

NEC 2987

Untitled