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    2SC555 Search Results

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    2SC555 Price and Stock

    Panasonic Electronic Components 2SC555600L

    RF TRANS NPN 10V 0.08A MINI3
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    onsemi 2SC5551AE-TD-E

    RF TRANS NPN 30V 3.5GHZ PCP
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    Bristol Electronics 2SC5551AE-TD-E 64 3
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    Quest Components 2SC5551AE-TD-E 51
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    Ameya Holding Limited 2SC5551AE-TD-E 2,321
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    onsemi 2SC5551AF-TD-E

    RF TRANS NPN 30V 3.5GHZ PCP
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    Panasonic Electronic Components 2SC5552

    16 A, 600 V, NPN, Si, POWER TRANSISTOR
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    2SC555 Datasheets (34)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC555 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC555 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC555 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC555 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC555 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC555 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC555 Toshiba Silicon NPN Epitaxial Planar Transistor Scan PDF
    2SC555 Toshiba Japanese Transistor Data Book Scan PDF
    2SC5550 Toshiba Silicon NPN triple diffused type transistor for high speed switching applications for inverter lighting system Scan PDF
    2SC5550 Toshiba TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Scan PDF
    2SC5551 Sanyo Semiconductor NPN Epitaxial Planar Silicon Transistor High-Frequ Original PDF
    2SC5551 Sanyo Semiconductor NPN Epitaxial Planar Silicon Transistor Original PDF
    2SC5551 Sanyo Semiconductor PCP Type Transistors, XP5 / XP6 Type Transistors Scan PDF
    2SC5551 Sanyo Semiconductor PCP (Power Chip Pack) Transistor Scan PDF
    2SC5551AE-TD-E On Semiconductor 2SC5551A - NPN Bipolar Transistor for High-Frequency Medium-Output Amplifier Applications Original PDF
    2SC5551AF-TD-E On Semiconductor 2SC5551A - NPN Bipolar Transistor for High-Frequency Medium-Output Amplifier Applications Original PDF
    2SC5552 Panasonic Silicon NPN Triple Diffusion Mesa Type Power Transistor Original PDF
    2SC5552 Panasonic NPN Transistor Original PDF
    2SC5552 Panasonic Silicon NPN Triple Diffusion Mesa Type Power Transistor Original PDF
    2SC5553 Panasonic Silicon NPN Triple Diffusion Mesa Type Power Transistor Original PDF

    2SC555 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c5550

    Abstract: 2SC5550
    Text: 2SC5550 東芝トランジスタ シリコンNPN三重拡散形 2SC5550 ○ インバータ照明用高速スイッチング 単位: mm • RCC 回路に最適 小電流のときに hFE を保証しています。 : hFE = 13 (最小) (IC = 1 mA) • 高速です。


    Original     		PDF 2SC5550 20070701-JA c5550 2SC5550

    YH 388

    Abstract: 828 npn 2SC5554 DSA003643
    Text: 2SC5554 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-692 Z 1st. Edition Oct. 1998 Features • Super compact package; (1.4 x 0.8 × 0.59mm) • Capable low voltage operation ; (V CE = 1V) Outline MFPAK 3 1 2 Note: Marking is “YH-”. 1. Emitter


    Original     		PDF 2SC5554 ADE-208-692 YH 388 828 npn 2SC5554 DSA003643

    2SC5557

    Abstract: No abstract text available
    Text: Transistor 2SC5557 Silicon NPN epitaxial planar type Unit: mm For low-noise RF amplifier 0.10+0.05 –0.02 0.33+0.05 –0.02 0.80±0.05 5˚ • High transition frequency fT • High gain of 8.2 dB and low noise of 1.8 dB at 3 V • Optimum for RF amplification of a portable telephone and pager


    Original     		PDF 2SC5557 2SC5557

    Hitachi DSA002756

    Abstract: No abstract text available
    Text: 2SC5555 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-693 Z 1st. Edition Nov. 1998 Features • Super compact package; (1.4 x 0.8 × 0.59mm) • Capable low voltage operation ; (V CE = 1V) Outline Note: Marking is “ZD-”. 2SC5555 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC5555 ADE-208-693 Hitachi DSA002756

    2SC5557

    Abstract: No abstract text available
    Text: Transistor 2SC5557 Silicon NPN epitaxial planar type Unit: mm For low-noise RF amplifier 0.33+0.05 –0.02 0.10+0.05 –0.02 5˚ M Di ain sc te on na tin nc ue e/ d • High transition frequency fT • High gain of 8.2 dB and low noise of 1.8 dB at 3 V • Optimum for RF amplification of a portable telephone and pager


    Original     		PDF 2SC5557 2SC5557

    2SC5555

    Abstract: DSA003643
    Text: 2SC5555 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-693 Z 1st. Edition Oct. 1998 Features • Super compact package; (1.4 x 0.8 × 0.59mm) • Capable low voltage operation ; (V CE = 1V) Outline MFPAK 3 1 2 Note: Marking is “ZD-”. 1. Emitter


    Original     		PDF 2SC5555 ADE-208-693 2SC5555 DSA003643

    2SC5551

    Abstract: TA-2665
    Text: Ordering number:ENN6328 NPN Epitaxial Planar Silicon Transistor 2SC5551 High-Frequency Medium-Output Amplifier Applications Features Package Dimensions • High fT : fT=3.5GHz typ . · Large current : (IC=300mA). · Large allowable collector dissipation (1.3W max).


    Original     		PDF ENN6328 2SC5551 300mA) 2SC5551] 25max 2SC5551 TA-2665

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5556 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm 0.40+0.10 –0.05 • Features Collector-base voltage (Emitter open) VCBO 15 V Collector-emitter voltage (Base open)


    Original     		PDF 2002/95/EC) 2SC5556

    2SC5555

    Abstract: 2SC5555ZD-TR-E PUSF0003ZA-A SC-89
    Text: 2SC5555 Silicon NPN Epitaxial VHF / UHF wide band amplifier REJ03G0748-0200 Previous ADE-208-693 Rev.2.00 Aug.10.2005 Features • Super compact package; (1.4 x 0.8 × 0.59mm) • Capable low voltage operation ; (VCE = 1V) Outline RENESAS Package code: PUSF0003ZA-A


    Original     		PDF 2SC5555 REJ03G0748-0200 ADE-208-693) PUSF0003ZA-A 2SC5555 2SC5555ZD-TR-E PUSF0003ZA-A SC-89

    rcc circuit

    Abstract: 2SC5550 c5550
    Text: 2SC5550 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5550 High-Speed Switching Application for Inverter Lighting System • Suitable for RCC circuit guaranteed small current hFE • High speed: tr = 0.5 µs (max), tf = 0.3 µs (max) (IC = 0.24 A)


    Original     		PDF 2SC5550 rcc circuit 2SC5550 c5550

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SC5553 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm Rating Collector-emitter voltage E-B short VCES 1 700 V Collector-emitter voltage (Base open) VCEO 600 V Emitter-base voltage (Collector open) VEBO


    Original     		PDF 2SC5553

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5556 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm 0.40+0.10 –0.05 • Features 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3 • Low noise figure NF


    Original     		PDF 2002/95/EC) 2SC5556

    2SC5551

    Abstract: No abstract text available
    Text: 2SC5551A Ordering number : ENA1118 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5551A High-Frequency Medium-Output Amplifier Applications Features • • • High fT : fT=3.5GHz typ . Large current : (IC=300mA). Large allowable collector dissipation (1.3W max).


    Original     		PDF 2SC5551A ENA1118 300mA) 250mm20 A1118-4/4 2SC5551

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1118A 2SC5551A RF Transistor 30V, 300mA, fT=3.5GHz, NPN Single PCP http://onsemi.com Features High fT : fT=3.5GHz typ Large current : (IC=300mA) Large allowable collector dissipation (1.3W max) • • • Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		PDF ENA1118A 2SC5551A 300mA, 300mA) 250mm2 A1118-6/6

    c5550

    Abstract: rcc circuit
    Text: 2SC5550 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5550 High-Speed Switching Application for Inverter Lighting System • Suitable for RCC circuit guaranteed small current hFE • High speed: tr = 0.5 µs (max), tf = 0.3 µs (max) (IC = 0.24 A)


    Original     		PDF 2SC5550 c5550 rcc circuit

    HITEC 523

    Abstract: 2SC5555 Hitachi DSA00398
    Text: 2SC5555 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-693 Z 1st. Edition Nov. 1998 Features • Super compact package; (1.4 x 0.8 × 0.59mm) • Capable low voltage operation ; (V CE = 1V) Outline MFPAK 3 1 2 Note: Marking is “ZD-”. 1. Emitter


    Original     		PDF 2SC5555 ADE-208-693 HITEC 523 2SC5555 Hitachi DSA00398

    Untitled

    Abstract: No abstract text available
    Text: 2SC5550 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5550 High-Speed Switching Application for Inverter Lighting System • Suitable for RCC circuit guaranteed small current hFE • High speed: tr = 0.5 µs (max), tf = 0.3 µs (max) (IC = 0.24 A)


    Original     		PDF 2SC5550

    zo 107

    Abstract: 2SC5555 2SC5555ZD-TR-E PUSF0003ZA-A SC-89
    Text: 2SC5555 Silicon NPN Epitaxial VHF / UHF wide band amplifier REJ03G0748-0300 Rev.3.00 Nov 14, 2006 Features • Super compact package; 1.4 x 0.8 × 0.59 mm • Capable low voltage operation; (VCE = 1 V) Outline RENESAS Package code: PUSF0003ZA-A (Package name: MFPAK R )


    Original     		PDF 2SC5555 REJ03G0748-0300 PUSF0003ZA-A zo 107 2SC5555 2SC5555ZD-TR-E PUSF0003ZA-A SC-89

    Hitachi DSA002756

    Abstract: No abstract text available
    Text: 2SC5554 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-692 Z 1st. Edition Nov. 1998 Features • Super compact package; (1.4 x 0.8 × 0.59mm) • Capable low voltage operation ; (V CE = 1V) Outline Note: Marking is “YH-”. 2SC5554 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC5554 ADE-208-692 Hitachi DSA002756

    A11182

    Abstract: 2sc5551a A1118-4/4
    Text: 2SC5551A Ordering number : ENA1118A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5551A High-Frequency Medium-Output Amplifier Applications Features High fT : fT=3.5GHz typ Large current : (IC=300mA) Large allowable collector dissipation (1.3W max)


    Original     		PDF ENA1118A 2SC5551A 300mA) 250mm2 A1118-6/6 A11182 2sc5551a A1118-4/4

    2SC5552

    Abstract: No abstract text available
    Text: Power Transistors 2SC5552 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm Unit Collector-base voltage Emitter open VCBO 1 700 V Collector-emitter voltage (E-B short) VCES 1 700 V Collector-emitter voltage (Base open) VCEO


    Original     		PDF 2SC5552 2SC5552

    2SC5550

    Abstract: No abstract text available
    Text: TO SH IBA 2SC5550 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5550 HIGH SPEED SWITCHING APPLICATION FOR INVERTER LIGHTING SYSTEM Suitable for Rqq Circuit. Guaranteed small current hjrg : hjPE = 13 (Min.) (Iq = 1mA) High Speed : tr = 0.5/^s (Max.), tf=0.3^s (Max.) (l£ = 0.24A)


    OCR Scan     		PDF 2SC5550 2SC5550

    LA 7687 a

    Abstract: No abstract text available
    Text: Ordering number:ENN6328 NPN Epitaxial Planar Silicon Transistor 2SC5551 High-Frequency Medium-Output Amplifier Applications Package Dimensions Features •High f j : fy=3.5GHz typ . •Large current : (Ic=300mA). •Large allowable collector dissipation (1,3W max)


    OCR Scan     		PDF ENN6328 2SC5551 300mA) 2SC5551] LA 7687 a

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5550 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5550 Unit in mm HIGH SPEED SWITCHING APPLICATION FOR INVERTER LIGHTING SYSTEM 8.3MAX. 0 3.1 ± 0.1 Suitable for R qq Circuit. Guaranteed small current hpg : hpE = 13 (Min.) (Iq = 1mA)


    OCR Scan     		PDF 2SC5550