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    2SC5550 Search Results

    2SC5550 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC5550 Toshiba Silicon NPN triple diffused type transistor for high speed switching applications for inverter lighting system Scan PDF
    2SC5550 Toshiba TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Scan PDF

    2SC5550 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    c5550

    Abstract: 2SC5550
    Text: 2SC5550 東芝トランジスタ シリコンNPN三重拡散形 2SC5550 ○ インバータ照明用高速スイッチング 単位: mm • RCC 回路に最適 小電流のときに hFE を保証しています。 : hFE = 13 (最小) (IC = 1 mA) • 高速です。


    Original     		2SC5550 20070701-JA c5550 2SC5550 PDF

    rcc circuit

    Abstract: 2SC5550 c5550
    Text: 2SC5550 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5550 High-Speed Switching Application for Inverter Lighting System • Suitable for RCC circuit guaranteed small current hFE • High speed: tr = 0.5 µs (max), tf = 0.3 µs (max) (IC = 0.24 A)


    Original     		2SC5550 rcc circuit 2SC5550 c5550 PDF

    c5550

    Abstract: rcc circuit
    Text: 2SC5550 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5550 High-Speed Switching Application for Inverter Lighting System • Suitable for RCC circuit guaranteed small current hFE • High speed: tr = 0.5 µs (max), tf = 0.3 µs (max) (IC = 0.24 A)


    Original     		2SC5550 c5550 rcc circuit PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5550 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5550 High-Speed Switching Application for Inverter Lighting System • Suitable for RCC circuit guaranteed small current hFE • High speed: tr = 0.5 µs (max), tf = 0.3 µs (max) (IC = 0.24 A)


    Original     		2SC5550 PDF

    c5550

    Abstract: 2SC5550 rcc circuit
    Text: 2SC5550 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5550 High-Speed Switching Application for Inverter Lighting System • Unit: mm Suitable for RCC circuit guaranteed small current hFE : hFE = 13 (min) (IC = 1 mA) • High speed: tr = 0.5 s (max), tf = 0.3 μs (max) (IC = 0.24 A)


    Original     		2SC5550 c5550 2SC5550 rcc circuit PDF

    c5550

    Abstract: rcc circuit 2SC5550 C5550 IS
    Text: 2SC5550 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5550 High-Speed Switching Application for Inverter Lighting System • Unit: mm Suitable for RCC circuit guaranteed small current hFE : hFE = 13 (min) (IC = 1 mA) • High speed: tr = 0.5 s (max), tf = 0.3 μs (max) (IC = 0.24 A)


    Original     		2SC5550 c5550 rcc circuit 2SC5550 C5550 IS PDF

    2SC5550

    Abstract: c5550
    Text: 2SC5550 東芝トランジスタ シリコンNPN三重拡散形 2SC5550 ○ インバータ照明用高速スイッチング 単位: mm • RCC 回路に最適 小電流のときに hFE を保証しています。 : hFE = 13 (最小) (IC = 1 mA) • 高速です。


    Original     		2SC5550 2SC5550 c5550 PDF

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A PDF

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 PDF

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943 PDF

    2sC5200, 2SA1943

    Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
    Text: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4


    Original     		TTC003 SC-64) BCJ0016F BCJ0016E 2sC5200, 2SA1943 TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N PDF

    transistor 2sc5353

    Abstract: 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA
    Text: Bipolar Power Transistor Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540001_02 1/29 Application Application Map Map of of Low Low VCE sat VCE(sat) BJT BJT Process Standard Standard Feature High hFE Hi-Met 3rd NPN 400 to 1000


    Original     		DP0540001 200kHz 200kHz 280ns transistor 2sc5353 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA PDF

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn PDF

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram PDF

    2SC4793 2sa1837

    Abstract: 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor
    Text: Part Number 2SA2058 Y 2SA1160 N 2SC2500 N 2SA1430 N 2SC3670 N 2SA1314 Y 2SC2982 Y 2SC5755 Y 2SA2066 Y 2SC5785 Y TPC6602 Y TPC6501 Y 2SA1802 Y 2SC4681 Y 2SC4682 N 2SC4683 N 2SC4781 N 2SC5713 Y TPC6D03 Y 2SA2065 Y 2SC5784 Y 2SA2069 Y 2SC5819 Y 2SA2061 Y 2SA2059 Y


    Original     		2SA2058 2SA1160 2SC2500 2SA1430 2SC3670 2SA1314 2SC2982 2SC5755 2SA2066 2SC5785 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor PDF

    *45F122

    Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
    Text: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 *45F122 GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322 PDF

    2sc5088 horizontal transistors

    Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
    Text: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.


    Original     		BCE0016A 3501C-0109 F-93561, 2sc5088 horizontal transistors equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a PDF

    2SC5550

    Abstract: No abstract text available
    Text: TO SH IBA 2SC5550 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5550 HIGH SPEED SWITCHING APPLICATION FOR INVERTER LIGHTING SYSTEM Suitable for Rqq Circuit. Guaranteed small current hjrg : hjPE = 13 (Min.) (Iq = 1mA) High Speed : tr = 0.5/^s (Max.), tf=0.3^s (Max.) (l£ = 0.24A)


    OCR Scan     		2SC5550 2SC5550 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5550 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5550 Unit in mm HIGH SPEED SWITCHING APPLICATION FOR INVERTER LIGHTING SYSTEM 8.3MAX. 0 3.1 ± 0.1 Suitable for R qq Circuit. Guaranteed small current hpg : hpE = 13 (Min.) (Iq = 1mA)


    OCR Scan     		2SC5550 PDF

    njd 5332 inverter

    Abstract: 2SC5550
    Text: TOSHIBA 2SC5550 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5550 HIGH SPEED SWITCHING APPLICATION FOR INVERTER LIGHTING SYSTEM Suitable for Rqq Circuit. Guaranteed small current hjrg : hjPE = 13 (Min.) (Iq = 1mA) High Speed : tr = 0.5/^s (Max.), tf=0.3^s (Max.) (l£ = 0.24A)


    OCR Scan     		2SC5550 njd 5332 inverter 2SC5550 PDF

    2SC5550

    Abstract: No abstract text available
    Text: TO SH IBA 2SC5550 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5550 HIGH SPEED SWITCHING APPLICATION FOR INVERTER LIGHTING SYSTEM Suitable for Rqq Circuit. Guaranteed small current hjrg : hjPE = 13 (Min.) (Iq = 1mA) High Speed : tr = 0.5/^s (Max.), tf=0.3^s (Max.) (l£ = 0.24A)


    OCR Scan     		2SC5550 2SC5550 PDF