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    2SC560 Search Results

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    2SC560 Price and Stock

    California Eastern Laboratories (CEL) 2SC5606-A

    RF TRANS NPN 3.3V 21GHZ SOT523
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    DigiKey 2SC5606-A
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    Eaton Bussmann UP2SC-560-R

    FIXED IND 56UH 900MA 210MOHM SMD
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    DigiKey UP2SC-560-R Reel 500
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    California Eastern Laboratories (CEL) 2SC5606-T1-A

    RF TRANS NPN 3.3V 21GHZ SOT523
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    DigiKey 2SC5606-T1-A Reel
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    2SC5606-T1-A Digi-Reel 1
    • 1 $1.6
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    2SC5606-T1-A Cut Tape
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    NEC Electronics Group 2SC5606-T1

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    Quest Components 2SC5606-T1 104,000
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    Renesas Electronics Corporation 2SC5606-T1-A-YFB

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    Quest Components 2SC5606-T1-A-YFB 782
    • 1 $0.83
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    2SC560 Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC560 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC560 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC560 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC560 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC560 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC560 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC560 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC560 Unknown Transistor Replacements Scan PDF
    2SC560 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC560 Unknown Cross Reference Datasheet Scan PDF
    2SC5601 NEC NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE AMPLIFIER 3-PIN LEAD-LESS MINIMOLD Original PDF
    2SC5602 NEC Original PDF
    2SC5602-T1 NEC NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD Original PDF
    2SC5603 NEC NPN SILICON RF TRANSISTOR FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD Original PDF
    2SC5604 NEC NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE AMPLIFIER 3-PIN LEAD-LESS MINIMOLD Original PDF
    2SC5606 NEC NPN SILICON RF TRANSISTOR FOR LOW NOISE / HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD Original PDF
    2SC5606-A CEL Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - RF TRANSISTOR NPN SOT-523 Original PDF
    2SC5606FB NEC NPN Silicon RF Transistor for Low Noise High-gain Amplification 3-pin Ultra Super Minimold Original PDF
    2SC5606-T1 NEC NPN SILICON RF TRANSISTOR FOR LOW NOISE / HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD Original PDF
    2SC5606-T1 NEC NPN SILICON RF TRANSISTOR Original PDF

    2SC560 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5436

    Abstract: 2SC5600 NEC 821
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA842TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • 2 different built-in transistors (2SC5436, 2SC5600) Q1: Low noise transistor NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF PA842TC 2SC5436, 2SC5600) S21e2 2SC5436 2SC5600 2SC5436 2SC5600 NEC 821

    2SC5604

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5604 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE AMPLIFIER 3-PIN LEAD-LESS MINIMOLD FEATURES • High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • fT = 25 GHz “UHS0” Ultra High Speed Process technology adopted


    Original     		PDF 2SC5604 S21e2 2SC5604-T3 2SC5604

    2SC5600

    Abstract: 2SC5603 marking NT
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA843TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low noise operation • 6-pin lead-less minimold package • 2 different built-in transistors (2SC5603, 2SC5600)


    Original     		PDF PA843TD 2SC5603, 2SC5600) S21e2 2SC5603 2SC5600 2SC5600 2SC5603 marking NT

    2SC5435

    Abstract: 2SC5600 IC 14558 5mA25
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA841TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5600) Q1: Built-in high-gain transistor


    Original     		PDF PA841TD 2SC5435, 2SC5600) S21e2 2SC5435 2SC5600 2SC5435 2SC5600 IC 14558 5mA25

    2sc5609

    Abstract: 2sc5609 transistor 2SA2021
    Text: Transistors 2SA2021 Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SC5609 0.10+0.05 –0.02 0.33+0.05 –0.02 0.15 min. 5˚ • Features 1.20±0.05 0.80±0.05 3 1 0.23+0.05 –0.02 2 0.15 min. • High foward current transfer ratio hFE


    Original     		PDF 2SA2021 2SC5609 2sc5609 2sc5609 transistor 2SA2021

    2SC5600

    Abstract: 2SC5737 IC 14558 IC 2801 UPA858TD-T3
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA858TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • 2 different built-in transistors (2SC5737, 2SC5600) Q1: Built-in low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF PA858TD 2SC5737, 2SC5600) S21e2 2SC5737 2SC5600 PA858TD-T3 2SC5600 2SC5737 IC 14558 IC 2801 UPA858TD-T3

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5609G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2021G • Features  Package  High forward current transfer ratio hFE  Code SSSMini3-F2


    Original     		PDF 2002/95/EC) 2SC5609G 2SA2021G

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SA2021 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5609 Unit: mm 0.10+0.05 –0.02 0.33+0.05 –0.02 5˚ • High forward current transfer ratio hFE • SSS-Mini type package, allowing downsizing and thinning of the


    Original     		PDF 2SA2021 2SC5609

    transistor 2sc5607

    Abstract: 2SC5607 TA-3603 ENN6403A
    Text: Ordering number : ENN6403A 2SC5607 NPN Epitaxial Planar Silicon Transistor 2SC5607 DC / DC Converter Applications Applications • Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit : mm 2033A Features • • 0.4 0.5 15.0 0.6 •


    Original     		PDF ENN6403A 2SC5607 2SC5607] transistor 2sc5607 2SC5607 TA-3603 ENN6403A

    transistor 1608

    Abstract: 2SC5606 2SC5606-T1 PU10781JJ01V0DS MA3510
    Text: データ・シート NPN シリコン RF トランジスタ NPN Silicon RF Transistor 2SC5606 NPN シリコン RF トランジスタ 低雑音・高利得増幅用 3 ピン超小型ミニモールド（19, 1608 PKG） 特 徴 ○高周波発振に最適（~5 GHz）


    Original     		PDF 2SC5606 2SC5606-A 2SC5606-T1 2SC5606-T1-A PU10781JJ01V0DS P14658JJ3V0DS00 PU10781JJ01V0DS transistor 1608 2SC5606 2SC5606-T1 MA3510

    2SC5606

    Abstract: 2SC5606-T1 ultra low noise NPN transistor nec microwave
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package


    Original     		PDF 2SC5606 2SC5606-A 2SC5606-T1 2SC5606-T1-A M8E0904E 2SC5606 2SC5606-T1 ultra low noise NPN transistor nec microwave

    marking 2w

    Abstract: 2SC5600 2SC5737
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA858TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Flat-lead 6-pin thin-type ultra super minimold package • 2 different built-in transistors (2SC5737, 2SC5600)


    Original     		PDF PA858TC 2SC5737, 2SC5600) S21e2 2SC5737 2SC5600 marking 2w 2SC5600 2SC5737

    2SC5600

    Abstract: transistor 2SC5600 P14999EJ1V0DS00
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5600 NPN SILICON RF TRANSISTOR FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • Flat-lead 3-pin thin-type ultra super minimold t = 0.59 mm


    Original     		PDF 2SC5600 2SC5600-T1 2SC5600 transistor 2SC5600 P14999EJ1V0DS00

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SC5609 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2021 Unit: mm 0.33+0.05 –0.02 0.10+0.05 –0.02 5˚ M Di ain sc te on na tin nc ue e/ d • High forward current transfer ratio hFE • SSS-Mini type package, allowing downsizing and thinning of the


    Original     		PDF 2SC5609 2SA2021

    2SC5603

    Abstract: 2SC5668 NEC k 2134 transistor
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA845TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for 3.6 to 4.2 GHz oscillation application • 2 different built-in transistors (2SC5603, 2SC5668)


    Original     		PDF PA845TC 2SC5603, 2SC5668) S21e2 2SC5603 2SC5668 2SC5603 2SC5668 NEC k 2134 transistor

    2SC5435

    Abstract: 2SC5600 of ic 3915
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA841TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5600) Q1: High gain transistor suited for buffer applications


    Original     		PDF PA841TC 2SC5435, 2SC5600) S21e2 2SC5435 2SC5600 2SC5435 2SC5600 of ic 3915

    ge 027

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2021G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5609G • Package M Di ain sc te on na tin nc ue e/ d  Features  High forward current transfer ratio hFE


    Original     		PDF 2002/95/EC) 2SA2021G 2SC5609G ge 027

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SA2021 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5609 Unit: mm 0.33+0.05 –0.02 M Di ain sc te on na tin nc ue e/ d 0.10+0.05 –0.02 1 2 0.15 min. d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll


    Original     		PDF 2SA2021 2SC5609

    NE66219

    Abstract: NEC66219 2SC5606
    Text: NPN SILICON RF TRANSISTOR NE66219 / 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package


    Original     		PDF NE66219 2SC5606 NEC66219 2SC5606 NE66219-T1 2SC5606-T1 NE66219-A 2SC5606-A NE66219-T1-A 2SC5606-T1-A

    2SC5609

    Abstract: 2SA2021G 2SC5609G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2021G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5609G • Package  High forward current transfer ratio hFE  Code SSSMini3-F2 Th an W is k y


    Original     		PDF 2002/95/EC) 2SA2021G 2SC5609G 2SC5609 2SA2021G 2SC5609G

    2Sd5609

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5609G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2021G • Package  High forward current transfer ratio hFE  Code SSSMini3-F2 M Di ain


    Original     		PDF 2002/95/EC) 2SC5609G 2SA2021G 2Sd5609

    ZO 607 MA

    Abstract: 421-5 RF NPN POWER TRANSISTOR C 10-12 GHZ 552-1 741 IC data sheet 901 704 16 08 55 2SC5436 2SC5600 A 3120 0532 8 pin a 3120 0537
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA842TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Flat-lead 6-pin thin-type ultra super minimold package • 2 different built-in transistors (2SC5436, 2SC5600)


    Original     		PDF PA842TC 2SC5436, 2SC5600) S21e2 2SC5436 2SC5600 ZO 607 MA 421-5 RF NPN POWER TRANSISTOR C 10-12 GHZ 552-1 741 IC data sheet 901 704 16 08 55 2SC5436 2SC5600 A 3120 0532 8 pin a 3120 0537

    2SC5606

    Abstract: transistor 3504 nec 2SC5606-T1 NEC JAPAN 3504
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold


    Original     		PDF 2SC5606 2SC5606-T1 2SC5606 transistor 3504 nec 2SC5606-T1 NEC JAPAN 3504

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN6403 NPN Epitaxial Planar Silicon Transistor 2SC5607 DC/DC Converter Applications Applications • Relay drivers, lamp drivers, motor drivers, strobes. Package Dimensions unit:mm 2033A_ Features • Adoption of MBIT processes.


    OCR Scan     		PDF ENN6403 2SC5607 2033A_ 2SC5607]