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    2SA2021 Search Results

    2SA2021 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA2021 Panasonic PNP Transistor Original PDF
    2SA2021 Panasonic Silicon PNP epitaxial planer type Original PDF

    2SA2021 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sc5609

    Abstract: 2sc5609 transistor 2SA2021
    Text: Transistors 2SA2021 Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SC5609 0.10+0.05 –0.02 0.33+0.05 –0.02 0.15 min. 5˚ • Features 1.20±0.05 0.80±0.05 3 1 0.23+0.05 –0.02 2 0.15 min. • High foward current transfer ratio hFE


    Original     		PDF 2SA2021 2SC5609 2sc5609 2sc5609 transistor 2SA2021

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5609G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2021G • Features  Package  High forward current transfer ratio hFE  Code SSSMini3-F2


    Original     		PDF 2002/95/EC) 2SC5609G 2SA2021G

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SA2021 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5609 Unit: mm 0.10+0.05 –0.02 0.33+0.05 –0.02 5˚ • High forward current transfer ratio hFE • SSS-Mini type package, allowing downsizing and thinning of the


    Original     		PDF 2SA2021 2SC5609

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SC5609 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2021 Unit: mm 0.33+0.05 –0.02 0.10+0.05 –0.02 5˚ M Di ain sc te on na tin nc ue e/ d • High forward current transfer ratio hFE • SSS-Mini type package, allowing downsizing and thinning of the


    Original     		PDF 2SC5609 2SA2021

    ge 027

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2021G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5609G • Package M Di ain sc te on na tin nc ue e/ d  Features  High forward current transfer ratio hFE


    Original     		PDF 2002/95/EC) 2SA2021G 2SC5609G ge 027

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SA2021 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5609 Unit: mm 0.33+0.05 –0.02 M Di ain sc te on na tin nc ue e/ d 0.10+0.05 –0.02 1 2 0.15 min. d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll


    Original     		PDF 2SA2021 2SC5609

    2SC5609

    Abstract: 2SA2021G 2SC5609G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2021G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5609G • Package  High forward current transfer ratio hFE  Code SSSMini3-F2 Th an W is k y


    Original     		PDF 2002/95/EC) 2SA2021G 2SC5609G 2SC5609 2SA2021G 2SC5609G

    2Sd5609

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5609G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2021G • Package  High forward current transfer ratio hFE  Code SSSMini3-F2 M Di ain


    Original     		PDF 2002/95/EC) 2SC5609G 2SA2021G 2Sd5609

    2Sd5609

    Abstract: 2SC5609G 2SC5609 2SA2021G 2sd5609g_pc-ta
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5609G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2021G • Package  High forward current transfer ratio hFE  Code SSSMini3-F2 Th an W is k y


    Original     		PDF 2002/95/EC) 2SC5609G 2SA2021G 2Sd5609 2SC5609G 2SC5609 2SA2021G 2sd5609g_pc-ta

    2SC5609

    Abstract: 2sc5609 transistor transistor 2sc5609 2SA2021 2SC560
    Text: Transistors 2SA2021 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5609 Unit: mm 0.33+0.05 –0.02 M Di ain sc te on na tin nc ue e/ d 0.10+0.05 –0.02 1 0.23+0.05 –0.02 0.15 min. 1.20±0.05 2 0.15 min. • High forward current transfer ratio hFE


    Original     		PDF 2SA2021 2SC5609 2SC5609 2sc5609 transistor transistor 2sc5609 2SA2021 2SC560

    2sc5609 transistor

    Abstract: 2SC5609 transistor 2sc5609 2SA2021
    Text: Transistors 2SA2021 Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SC5609 0.10+0.05 –0.02 0.33+0.05 –0.02 0.15 min. 5˚ • Features 1.20±0.05 0.80±0.05 3 1 0.23+0.05 –0.02 2 0.15 min. • High foward current transfer ratio hFE


    Original     		PDF 2SA2021 2SC5609 2sc5609 transistor 2SC5609 transistor 2sc5609 2SA2021

    2sc5609 transistor

    Abstract: 2SC5609 transistor 2sc5609 2SA20 2SA2021
    Text: Transistors 2SC5609 Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SA2021 0.10+0.05 –0.02 0.33+0.05 –0.02 1 0.23+0.05 –0.02 0.15 min. 2 0.15 min. • High foward current transfer ratio hFE • SSS-mini type package, allowing downsizing and thinning of the


    Original     		PDF 2SC5609 2SA2021 2sc5609 transistor 2SC5609 transistor 2sc5609 2SA20 2SA2021

    2Sd5609

    Abstract: 2SC5609G 2SC560 2SC5609 2SA2021G 2sd5609g_pc-ta
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5609G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2021G • Package  High forward current transfer ratio hFE  Code SSSMini3-F2 M Di ain


    Original     		PDF 2002/95/EC) 2SC5609G 2SA2021G 2Sd5609 2SC5609G 2SC560 2SC5609 2SA2021G 2sd5609g_pc-ta

    2SC5609

    Abstract: 2sc5609 transistor transistor 2sc5609 2SA2021
    Text: Transistors 2SC5609 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2021 Unit: mm 0.33+0.05 –0.02 M Di ain sc te on na tin nc ue e/ d 0.10+0.05 –0.02 0.80±0.05 1.20±0.05 Collector current Peak collector current Collector power dissipation


    Original     		PDF 2SC5609 2SA2021 2SC5609 2sc5609 transistor transistor 2sc5609 2SA2021

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2021G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5609G • Features  Package  High forward current transfer ratio hFE  Code SSSMini3-F2


    Original     		PDF 2002/95/EC) 2SA2021G 2SC5609G

    2SC5609

    Abstract: 2sc5609 transistor transistor 2sc5609 2SA2021 SSSMini 3
    Text: Transistors 2SC5609 Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SA2021 0.10+0.05 –0.02 0.33+0.05 –0.02 1 0.23+0.05 –0.02 0.15 min. 2 0.15 min. • High foward current transfer ratio hFE • SSS-mini type package, allowing downsizing and thinning of the


    Original     		PDF 2SC5609 2SA2021 2SC5609 2sc5609 transistor transistor 2sc5609 2SA2021 SSSMini 3

    2SA2021G

    Abstract: 2SC5609G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2021G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5609G • Package  High forward current transfer ratio hFE  Code SSSMini3-F2 M Di ain


    Original     		PDF 2002/95/EC) 2SA2021G 2SC5609G 2SA2021G 2SC5609G

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    transistor 2sc5609

    Abstract: 2sc5609 MAS3781E 2sc5609 transistor 2SD2621
    Text: New Subminiature Surface-Mount Package SSS Mini 3-Pin Package Series n Overview The Subminiature Surface-Mount Package Series with 1.2 mm x 0.8 mm x 0.52 mm in external size will contribute to the production of downsized, lightweight, and low-profile devices. In addition, the flat-lead structure of the


    Original     		PDF MAS3132D MAS3132E MAS3781 MAS3795 MAS3781E MAS3795E MAS3784 transistor 2sc5609 2sc5609 2sc5609 transistor 2SD2621

    2SC5609

    Abstract: 2sc5609 transistor DA221 transistor 2sc5609 philips zener 2SA1774R 2SA1774S panasonic zener smd ZENER PANASONIC 2PC4617q
    Text: New Product Announcement February 2002 Introducing Second Generation Subminiature Schottky, Zener & Switching Diodes in SOT-523 3-pin SMD’s SOT-523 C TO P V IE W B B C E A G H K J Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D  


    Original     		PDF OT-523 diD4448HTS 1SS362; DA221; MA3S133, MA3S137 MMBT2222AT MMBT3904T MMBT3906T 2SC5609 2sc5609 transistor DA221 transistor 2sc5609 philips zener 2SA1774R 2SA1774S panasonic zener smd ZENER PANASONIC 2PC4617q

    mip411

    Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 mip411 MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291