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    2SC572 Price and Stock

    Panasonic Electronic Components 2SC57250SL

    TRANS NPN 15V 2A MINI3-G1
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    ROHM Semiconductor 2SC5729T106R

    TRANS NPN 30V 0.5A UMT3
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    DigiKey 2SC5729T106R Reel 3,000
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    Mouser Electronics 2SC5729T106R
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    ROHM Semiconductor 2SC5729T106Q

    TRANS NPN 30V 0.5A UMT3
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    DigiKey 2SC5729T106Q Reel 3,000
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    Quest Components 2SC5729T106Q 2,400
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    2SC572 Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC572 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC572 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC572 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC572 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC572 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC572 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC572 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC572 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC572 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC572 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC572 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC572 Unknown Transistor Replacements Scan PDF
    2SC5720 Toshiba Transistor Original PDF
    2SC5720 Toshiba NPN Transistor Original PDF
    2SC5722 Sanyo Semiconductor Horizontal Deflection Switching Transistors Original PDF
    2SC5723 Sanyo Semiconductor Horizontal Deflection Switching Transistors Original PDF
    2SC5725 Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SC5725 Panasonic NPN Transistor Original PDF
    2SC57250SL Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRAN NPN HF 15VCEO 2.0A MINI 3P Original PDF
    2SC5726 Isahaya Electronics FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE Original PDF

    2SC572 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC5720

    Abstract: No abstract text available
    Text: 2SC5720 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5720 ○ 中電力増幅用 ○ ストロボ用 • 単位: mm コレクタ飽和電圧が低い。 : VCE sat = 0.25 V (最大) (IC = 3 A/IB = 60 mA) 絶対最大定格 (Ta = 25°C)


    Original     		2SC5720 2SC5720 PDF

    2SC5725

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5725 Silicon NPN epitaxial planar type For DC-DC converter Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3 • Low collector-emitter saturation voltage VCE(sat)


    Original     		2002/95/EC) 2SC5725 2SC5725 PDF

    2SC5725

    Abstract: No abstract text available
    Text: Transistors 2SC5725 Silicon NPN epitaxial planer type Unit: mm For DC-DC converter 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 2.90+0.20 –0.05 • Absolute Maximum Ratings Ta = 25°C Unit Collector to base voltage VCBO 20 V Collector to emitter voltage


    Original     		2SC5725 SC-59 2SC5725 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5729 Transistor Medium power transistor 30V, 0.5A 2SC5729 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 !External dimensions (Units : mm) !Features 1) High speed switching. (Tf : Typ. : 50ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)


    Original     		2SC5729 500mA) 150mV 100mA, 2SA2047 2SC5729 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5725 Silicon NPN epitaxial planar type For DC-DC converter Unit: mm 0.40+0.10 –0.05 • Features 1.9±0.1 Unit Collector-base voltage (Emitter open) VCBO 20 V Collector-emitter voltage (Base open)


    Original     		2002/95/EC) 2SC5725 PDF

    2SC5723

    Abstract: No abstract text available
    Text: Ordering number : ENN7398 2SC5723 NPN Triple Diffused Planar Silicon Transistor 2SC5723 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).


    Original     		ENN7398 2SC5723 2048B 2SC5723] 2SC5723 PDF

    2SC5720

    Abstract: 2sC5720 transistor transistor 2sc5720
    Text: 2SC5720 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5720 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS • Low Saturation Voltage: Unit: mm VCE sat (1) = 0.25 V (max) (IC = 3 A/IB = 60 mA) Maximum Ratings (Ta = 25°C) Characteristic


    Original     		2SC5720 2SC5720 2sC5720 transistor transistor 2sc5720 PDF

    2SC5725

    Abstract: No abstract text available
    Text: Transistors 2SC5725 Silicon NPN epitaxial planar type For DC-DC converter Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3 • Low collector-emitter saturation voltage VCE sat • Mini type package, allowing downsizing of the equipment and


    Original     		2SC5725 2SC5725 PDF

    2SC5726

    Abstract: No abstract text available
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5726 PRELIMINARY Notics:This is not a final specification. Some parametric limits are subject to change. FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC5726 is a mini package resin sealed


    Original     		2SC5726 2SC5726 SC-59 PDF

    2SC5727

    Abstract: S2-12V
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5727 PRELIMINARY Notics:This is not a final specification. Some parametric limits are subject to change. FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC5727 is a super mini package resin sealed


    Original     		2SC5727 2SC5727 SC-70 S2-12V PDF

    2SC5725

    Abstract: No abstract text available
    Text: Transistors 2SC5725 Silicon NPN epitaxial planer type Unit: mm For DC-DC converter 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 2.90+0.20 –0.05 • Absolute Maximum Ratings Ta = 25°C Unit Collector to base voltage VCBO 20 V Collector to emitter voltage


    Original     		2SC5725 SC-59 2SC5725 PDF

    IC 7402

    Abstract: 7402 ic datasheet IC 7402 2SC5722
    Text: 2SC5722 Ordering number : ENN7402 NPN Triple Diffused Planar Silicon Transistor 2SC5722 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).


    Original     		2SC5722 ENN7402 IC 7402 7402 ic datasheet IC 7402 2SC5722 PDF

    2SC5725

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5725 Silicon NPN epitaxial planar type For DC-DC converter Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 3 (0.95) (0.95) 1.9±0.1 Collector current


    Original     		2002/95/EC) 2SC5725 SC-59 2SC5725 PDF

    IC 7402

    Abstract: 7402 data sheet IC 7402 datasheet IC 7402 7402 ic datasheet 7402 ic 2SC5722
    Text: 2SC5722 Ordering number : ENN7402 NPN Triple Diffused Planar Silicon Transistor 2SC5722 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).


    Original     		2SC5722 ENN7402 IC 7402 7402 data sheet IC 7402 datasheet IC 7402 7402 ic datasheet 7402 ic 2SC5722 PDF

    transistor 2sc5720

    Abstract: 2Sc5720 2sC5720 transistor
    Text: 2SC5720 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5720 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS • Low Saturation Voltage: Unit: mm VCE sat (1) = 0.25 V (max) (IC = 3 A/IB = 60 mA) Maximum Ratings (Ta = 25°C) Characteristic


    Original     		2SC5720 transistor 2sc5720 2Sc5720 2sC5720 transistor PDF

    2SC5728

    Abstract: LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5728 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC5728 is a ultra super mini package resin sealed silicon NPN epitaxial transistor, 1,6 It is designed for high frequency application.


    Original     		2SC5728 2SC5728 JEITASC-90 LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN PDF

    transistor 2sc5720

    Abstract: No abstract text available
    Text: 2SC5720 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5720 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS • Low Saturation Voltage: VCE sat (1) = 0.25 V (Max.) (IC = 3 A/IB = 60 mA) Maximum Ratings (Ta = 25°C) Characteristic


    Original     		2SC5720 transistor 2sc5720 PDF

    2SA20

    Abstract: 2SA2047 2SC5729 T106
    Text: 2SC5729 Transistor Medium power transistor 30V, 0.5A 2SC5729 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 !External dimensions (Units : mm) !Features 1) High speed switching. (Tf : Typ. : 50ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)


    Original     		2SC5729 500mA) 150mV 100mA, 2SA2047 2SA20 2SA2047 2SC5729 T106 PDF

    IC-520

    Abstract: 2SC5722
    Text: 2SC5722 注文コード No. N 7 4 0 2 2SC5722 NPN 三重拡散プレーナ形シリコントランジスタ 超高精細度 CRT ディスプレイ水平偏向出力用 特長 ・高速度である。 ・高耐圧である（VCBO=1500V） 。 ・高信頼性である（HVP プロセス採用）


    Original     		2SC5722 100mA, IT02404 IT02389 IT02629 IC-520 2SC5722 PDF

    2sC5720 transistor

    Abstract: transistor 2sc5720 2SC5720
    Text: 2SC5720 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5720 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS • Low Saturation Voltage: Unit: mm VCE sat (1) = 0.25 V (max) (IC = 3 A/IB = 60 mA) Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SC5720 2sC5720 transistor transistor 2sc5720 2SC5720 PDF

    2SC572

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5725 Silicon NPN epitaxial planar type For DC-DC converter Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3 • Low collector-emitter saturation voltage VCE(sat)


    Original     		2002/95/EC) 2SC5725 2SC572 PDF

    IT02410

    Abstract: 2SC5723 A1030 40c208
    Text: Ordering number : ENN7398 2SC5723 NPN Triple Diffused Planar Silicon Transistor 2SC5723 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).


    Original     		ENN7398 2SC5723 2048B 2SC5723] IT02410 2SC5723 A1030 40c208 PDF

    2SA2047

    Abstract: 2SC5729 T106
    Text: 2SC5729 Transistor Medium power transistor 30V, 0.5A 2SC5729 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 zExternal dimensions (Units : mm) zFeatures 1) High speed switching. (Tf : Typ. : 50ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)


    Original     		2SC5729 500mA) 150mV 100mA, 2SA2047 2SA2047 2SC5729 T106 PDF

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE PDF